PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION • • • • TO-92 High total power dissipation(PT=625mW) High collector Current (Ic=500mA) Complementary to PJ2N9012 Excellent hEF Linearity SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C) Rating Symbol Value Uint Collector Base Voltage Collector Emitter Voltage VCBO VCEO 40 20 V V Emitter Base Voltage VEBO 5 V Collector Current Ic 500 A Collector Dissipation Pc 625 W Junction Temperature Tj Storage Temperature Tstg P in : 1. Emitter 2. Base 3. Collector ORDERING INFORMATION Device Operating Temperature Package PJ2N9013CT PJ2N9013CX -20℃～+85℃ TO-92 SOT-23 °C 150 °C -55 ~150 P in : 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (Ta= 25 °C) Characte ristic Symbol Te st Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= 100µA , IE =0 40 V Collector-Emitter Breakdown Voltage BVCEO IC= 1mA , IB=0 20 V Emitter-Base Breakdown Voltage BVEBO IE =100µA , IC=0 5 V Collector Cut-off Current ICBO VCB= 25V , IE = 0 100 nA Emitter Cut-off Current IEBO VEB= 3V , IC=0 100 nA DC Current Gain hFE1 VEB= 1V, IC =50mA 64 120 hFE2 VEB= 1V, IC =500mA 40 90 202 Collector- Base Saturation Voltage VCE(sat) IC= 500 mA , IB=50mA 0.16 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC= 500mA , IB=50mA 0.91 1.2 V Base-Emitter On Voltage VBE(ON) VCE =1V, Ic =10mA 0.67 0.7 V 0.6 hEF CLASSIFICATION Classification D E F G H hEF 64-91 78-112 96-135 112-166 144-202 1-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9013 NPN Epitaxial Silicon Transistor 3-3 2002/01.rev.A