DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 FEATURES PINNING - SOT353 • Small size • High power gain at low bias current and high frequencies • High reverse isolation • Low noise figure • Gold metallization ensures excellent reliability • Minimum operating voltage VC2−E1 = 1 V. PIN SYMBOL DESCRIPTION 1 b2 base 2 2 e1 emitter 1 3 b1 base 1 4 c1/e2 5 c2 collector 1/emitter 2 collector 2 APPLICATIONS • Low voltage, low current, low noise and high gain amplifiers c2 handbook, halfpage 5 4 b2 • Oscillator buffer amplifiers • Wideband voltage-to-current converters. c1/e2 b1 DESCRIPTION 1 2 3 e1 Top view Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback capacitance resulting in high isolation. MAM212 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT feedback capacitance CB1−C2 Ie = 0; VC2-E1 = 0; f = 1 MHz − − 10 fF maximum isolation IC = 5 mA; VC2 = VB2 = 3 V; f = 900 MHz 60 − − dB MSG maximum stable power gain IC = 0.5 mA; VC2 = VB2 = 1 V; f = 900 MHz; Tamb = 25 °C − 22 − dB F noise figure IC = 0.5 mA; VC2-E1 = 1 V; f = 500 MHz; ΓS = Γopt − 1.1 1.4 dB IC = 1 mA; VC2-E1 = 3 V; f = 900 MHz; ΓS = Γopt − 1.8 2.1 dB single loaded − − 230 K/W double loaded − − 115 K/W Cre s 21 ⁄ s 12 2 Rth j-s 1996 Oct 08 thermal resistance from junction to soldering point 2 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 18 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C up to Ts = 118 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS VALUE UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 3 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0 8 − − V V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 2.5 − − V ICBO collector-base leakage current IE = 0; VCB = 6 V − − 50 nA hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 AC characteristics of the cascode configuration measured in test circuit (note 1) fT transition frequency IC = 5 mA; VC2-E1 = 3 V; f = 1 GHz − 7.3 − GHz Cc collector capacitance T2 IE = ie = 0; VC2-B2 = 0; f = 1 MHz − 0.4 − pF Cre2 feedback capacitance T2 IC = 0; VC2-E1 = 3 V; f = 1 MHz − 250 fF Cre feedback capacitance IC = 0; VC2-E1 = 3 V; f = 1 MHz − − 10 fF MSG maximum stable power gain; note 2 IC = 0.25 mA; VC2-E1 = 1 V; f = 300 MHz; Tamb = 25 °C − 25 − dB IC = 0.5 mA; VC2-E1 = 1 V; f = 900 MHz; Tamb = 25 °C − 22 − dB IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C − 23 − dB IC = 0.5 mA; VC2-E1 = 3 V; f = 300 MHz; Tamb = 25 °C − 21 − dB IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz; Tamb = 25 °C − 16 − dB IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz; Tamb = 25 °C − 11 − dB IC = 0.5 mA; VC2-E1 = 1 V; f = 900 MHz 40 45 − dB IC = 5 mA; VC2-E1 = 3 V; f = 900 MHz 60 68 − dB IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz 40 48 − dB IC = 0.5 mA; VC2-E1 = 1 V; f = 500 MHz; ΓS = Γopt − 1.1 1.4 dB IC = 1 mA; VC2-E1 = 3 V; f = 900 MHz; ΓS = Γopt − 1.8 2.1 dB IC = 1 mA; VC2-E1 = 1 V; f = 2 GHz; ΓS = Γopt − 3.5 − dB note 4 − −20 − dBm s 21 insertion power gain 2 s 21 ⁄ s 12 2 F IP3 1996 Oct 08 maximum isolation; note 3 noise figure third order intercept point (input) 4 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 Notes 1. VB2 = VC2−E1/2 + 0.6 V 2 2 2 1 + s 11 × s 22 – s 12 × s 21 – s 11 – s 22 2 2. MSG = s 12 ⁄ s 21 × k – k – 1 ; k = ---------------------------------------------------------------------------------------------------------------2 × s 12 × s 21 3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application). 4. IC = 1 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 904 MHz. MBG209 MBG208 600 12 handbook, halfpage handbook, halfpage double loaded Ptot (mW) VC2-E1 = 12 V fT (GHz) 400 9V 8 6V single loaded 200 3V 4 0 0 50 100 150 oC) 0 10−1 200 Ts ( 1 10 IC (mA) f = 1 GHz; Tamb = 25 °C. Fig.2 Power derating as a function of soldering point temperature; typical values. 1996 Oct 08 Fig.3 5 Transition frequency as a function of collector current; typical values. 102 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 MGG213 6 MGG214 6 handbook, halfpage handbook, halfpage IC = 0.25 mA F (dB) F (dB) 4 4 1 mA f = 900 MHz 2 2 500 MHz 0 10−1 1 0 10−1 10 f (GHz) VC2-E1 = 1 V. VC2-E1 = 1 V. Fig.4 Fig.5 Minimum noise figure as a function of frequency; typical values. MGG215 50 handbook, halfpage MSG (dB) 40 Minimum noise figure as a function of collector current; typical values. MGG216 handbook, halfpage S21/S12 (dB) (1) 80 (2) 80 S21/S12 MSG (dB) (dB) 10 IC (mA) 40 100 (1) 1 60 30 (2) (3) 30 60 20 40 (3) 40 20 10 10 102 103 f (MHz) 20 104 10 10−1 1 20 10 (1) VC2−E1 = 1 V; f = 500 MHz. (1) IC = 5 mA; VC2−E1 = 3 V. (2) IC = 1 mA; VC2−E1 = 1 V. (3) IC = 0.5 mA; VC2−E1 = 1 V. (2) VC2−E1 = 1 V; f = 900 MHz. (3) VC2−E1 = 3 V; f = 2 GHz. Fig.6 Fig.7 Maximum stable gain and isolation as functions of frequency; typical values. 1996 Oct 08 IC (mA) 6 Maximum stable gain and isolation as functions of collector current; typical values. Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 MGG217 25 gain (dB) MGG218 10 handbook, halfpage handbook, halfpage RL = 470 Ω IP3 (dBm) 20 (1) 0 15 (2) 50 Ω −10 10 5 (3) −20 (4) 0 −5 10−1 1 IC (mA) −30 10−1 10 1 IC (mA) 10 VCE = 1 V; RS = 50 Ω; XS = XL = opt; f = 900 MHz. Point tuned for maximum gain with double slug tuners; f = 900 MHz. (1) IP3 (output); VC2-E1 = 3 V. (2) IP3 (output); VC2-E1 = 1 V. (3) IP3 (input); VC2-E1 = 3 V. (4) IP3 (input); VC2-E1 = 1 V. Fig.8 Fig.9 Transducer gain as a function of collector current; typical values. 1996 Oct 08 7 Third order intercept point as a function of collector current; typical values. Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 APPLICATION INFORMATION SPICE parameters for any single BFC505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA − − V mA fA − − − V mA aA − Ω µA Ω Ω Ω − eV − fF mV − ps − V mA deg fF mV − − ns F mV − − handbook, halfpage B2 LP T2 LB2 LE2 C1/E2 LP B1 LP T1 LB1 LP LE1 E1 MBG216 Fig.10 Package equivalent circuit SOT353A (inductance only). Lead and mutual inductances (nH) LP 0.4 M(LB1,LE1) +0.4 LB1,2 0.5 M(LB1,LE2) +0.25 LE1,2 0.8 E1 35 B2 3.5 35 C2 2 35 36 36 35 2 15 B1 E1 B2 C2 C1/E2 MBG217 Note Fig.11 Package capacitance (fF) between indicated nodes. 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 C2 LP 8 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 Typical application circuits CD handbook, full pagewidth +V CC Lout RB1 RP C3 RS CB C out RF output (50 Ω) C4 RB2 RF input (50 Ω) C1 Cin C2 Lin Cpar RB3 CE RE MBG218 RS increases stability. Fig.12 Narrowband amplifier. +VCC handbook, full pagewidth RF output E1 T2 T1 Vtune E1 MBG227 T1 forms a colpitts oscillator. T2 acts as a buffer amplifier. Fig.13 VCO/buffer combination. 1996 Oct 08 9 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 PACKAGE OUTLINE 0.2 handbook, full pagewidth 1.0 0.8 0.8 0.6 0.17 0.10 0.1 0.0 0.3 0.1 0.65 0.65 1 0.25 0.15 (5x) 2 2.2 1.8 4 2.2 2.0 Dimensions in mm. Fig.14 SOT353. 1996 Oct 08 B 5 3 MSA365 0.2 M B 1.35 1.15 A 10 0.2 M A Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 08 11