PHILIPS BFC505

DISCRETE SEMICONDUCTORS
DATA SHEET
BFC505
NPN wideband cascode transistor
Product specification
Supersedes data of 1995 Sep 01
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
FEATURES
PINNING - SOT353
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage VC2−E1 = 1 V.
PIN
SYMBOL
DESCRIPTION
1
b2
base 2
2
e1
emitter 1
3
b1
base 1
4
c1/e2
5
c2
collector 1/emitter 2
collector 2
APPLICATIONS
• Low voltage, low current, low noise and high gain
amplifiers
c2
handbook, halfpage
5
4
b2
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
c1/e2
b1
DESCRIPTION
1
2
3
e1
Top view
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
feedback capacitance CB1−C2
Ie = 0; VC2-E1 = 0; f = 1 MHz
−
−
10
fF
maximum isolation
IC = 5 mA; VC2 = VB2 = 3 V;
f = 900 MHz
60
−
−
dB
MSG
maximum stable power gain
IC = 0.5 mA; VC2 = VB2 = 1 V;
f = 900 MHz; Tamb = 25 °C
−
22
−
dB
F
noise figure
IC = 0.5 mA; VC2-E1 = 1 V;
f = 500 MHz; ΓS = Γopt
−
1.1
1.4
dB
IC = 1 mA; VC2-E1 = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.8
2.1
dB
single loaded
−
−
230
K/W
double loaded
−
−
115
K/W
Cre
s 21 ⁄ s 12
2
Rth j-s
1996 Oct 08
thermal resistance from
junction to soldering point
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
18
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
up to Ts = 118 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
VALUE
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V(BR)CBO
collector-base breakdown voltage IC = 2.5 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 10 µA; IB = 0
8
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
2.5
−
−
V
ICBO
collector-base leakage current
IE = 0; VCB = 6 V
−
−
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
AC characteristics of the cascode configuration measured in test circuit (note 1)
fT
transition frequency
IC = 5 mA; VC2-E1 = 3 V; f = 1 GHz
−
7.3
−
GHz
Cc
collector capacitance T2
IE = ie = 0; VC2-B2 = 0; f = 1 MHz
−
0.4
−
pF
Cre2
feedback capacitance T2
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
250
fF
Cre
feedback capacitance
IC = 0; VC2-E1 = 3 V; f = 1 MHz
−
−
10
fF
MSG
maximum stable power gain;
note 2
IC = 0.25 mA; VC2-E1 = 1 V;
f = 300 MHz; Tamb = 25 °C
−
25
−
dB
IC = 0.5 mA; VC2-E1 = 1 V;
f = 900 MHz; Tamb = 25 °C
−
22
−
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz;
Tamb = 25 °C
−
23
−
dB
IC = 0.5 mA; VC2-E1 = 3 V;
f = 300 MHz; Tamb = 25 °C
−
21
−
dB
IC = 5 mA; VC2-E1 = 3 V;
f = 900 MHz; Tamb = 25 °C
−
16
−
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz;
Tamb = 25 °C
−
11
−
dB
IC = 0.5 mA; VC2-E1 = 1 V;
f = 900 MHz
40
45
−
dB
IC = 5 mA; VC2-E1 = 3 V;
f = 900 MHz
60
68
−
dB
IC = 5 mA; VC2-E1 = 3 V; f = 2 GHz
40
48
−
dB
IC = 0.5 mA; VC2-E1 = 1 V;
f = 500 MHz; ΓS = Γopt
−
1.1
1.4
dB
IC = 1 mA; VC2-E1 = 3 V;
f = 900 MHz; ΓS = Γopt
−
1.8
2.1
dB
IC = 1 mA; VC2-E1 = 1 V;
f = 2 GHz; ΓS = Γopt
−
3.5
−
dB
note 4
−
−20
−
dBm
s 21
insertion power gain
2
s 21 ⁄ s 12
2
F
IP3
1996 Oct 08
maximum isolation; note 3
noise figure
third order intercept point (input)
4
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
Notes
1. VB2 = VC2−E1/2 + 0.6 V
2
2
2 
1 + s 11 × s 22 – s 12 × s 21 –  s 11 – s 22 


2
2. MSG = s 12 ⁄ s 21 ×  k – k – 1  ; k = ---------------------------------------------------------------------------------------------------------------2 × s 12 × s 21
3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).
4. IC = 1 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p−q) = 904 MHz.
MBG209
MBG208
600
12
handbook, halfpage
handbook, halfpage
double loaded
Ptot
(mW)
VC2-E1 = 12 V
fT
(GHz)
400
9V
8
6V
single loaded
200
3V
4
0
0
50
100
150
oC)
0
10−1
200
Ts (
1
10
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
1996 Oct 08
Fig.3
5
Transition frequency as a function of
collector current; typical values.
102
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
MGG213
6
MGG214
6
handbook, halfpage
handbook, halfpage
IC = 0.25 mA
F
(dB)
F
(dB)
4
4
1 mA
f = 900 MHz
2
2
500 MHz
0
10−1
1
0
10−1
10
f (GHz)
VC2-E1 = 1 V.
VC2-E1 = 1 V.
Fig.4
Fig.5
Minimum noise figure as a function of
frequency; typical values.
MGG215
50
handbook, halfpage
MSG
(dB)
40
Minimum noise figure as a function of
collector current; typical values.
MGG216
handbook, halfpage
S21/S12
(dB)
(1)
80
(2)
80
S21/S12
MSG
(dB)
(dB)
10
IC (mA)
40
100
(1)
1
60
30
(2)
(3)
30
60
20
40
(3)
40
20
10
10
102
103
f (MHz)
20
104
10
10−1
1
20
10
(1) VC2−E1 = 1 V; f = 500 MHz.
(1) IC = 5 mA; VC2−E1 = 3 V.
(2) IC = 1 mA; VC2−E1 = 1 V.
(3) IC = 0.5 mA; VC2−E1 = 1 V.
(2) VC2−E1 = 1 V; f = 900 MHz.
(3) VC2−E1 = 3 V; f = 2 GHz.
Fig.6
Fig.7
Maximum stable gain and isolation as
functions of frequency; typical values.
1996 Oct 08
IC (mA)
6
Maximum stable gain and isolation as
functions of collector current; typical values.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
MGG217
25
gain
(dB)
MGG218
10
handbook, halfpage
handbook, halfpage
RL = 470 Ω
IP3
(dBm)
20
(1)
0
15
(2)
50 Ω
−10
10
5
(3)
−20
(4)
0
−5
10−1
1
IC (mA)
−30
10−1
10
1
IC (mA)
10
VCE = 1 V; RS = 50 Ω; XS = XL = opt; f = 900 MHz.
Point tuned for maximum gain with double slug tuners; f = 900 MHz.
(1) IP3 (output); VC2-E1 = 3 V.
(2) IP3 (output); VC2-E1 = 1 V.
(3) IP3 (input); VC2-E1 = 3 V.
(4) IP3 (input); VC2-E1 = 1 V.
Fig.8
Fig.9
Transducer gain as a function of collector
current; typical values.
1996 Oct 08
7
Third order intercept point as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
APPLICATION INFORMATION
SPICE parameters for any single BFC505 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
750.0
0.000
0.897
UNIT
aA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
fF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ns
F
mV
−
−
handbook, halfpage
B2
LP
T2
LB2
LE2
C1/E2
LP
B1
LP
T1
LB1
LP
LE1
E1
MBG216
Fig.10 Package equivalent circuit SOT353A
(inductance only).
Lead and mutual inductances (nH)
LP
0.4
M(LB1,LE1)
+0.4
LB1,2
0.5
M(LB1,LE2)
+0.25
LE1,2
0.8
E1
35
B2
3.5
35
C2
2
35
36
36
35
2
15
B1
E1
B2
C2
C1/E2
MBG217
Note
Fig.11 Package capacitance (fF) between
indicated nodes.
1. These parameters have not been extracted, the
default values are shown.
1996 Oct 08
C2
LP
8
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
Typical application circuits
CD
handbook, full pagewidth
+V
CC
Lout
RB1
RP
C3
RS
CB
C
out
RF output
(50 Ω)
C4
RB2
RF input
(50 Ω)
C1
Cin
C2
Lin
Cpar
RB3
CE
RE
MBG218
RS increases stability.
Fig.12 Narrowband amplifier.
+VCC
handbook, full pagewidth
RF output
E1
T2
T1
Vtune
E1
MBG227
T1 forms a colpitts oscillator.
T2 acts as a buffer amplifier.
Fig.13 VCO/buffer combination.
1996 Oct 08
9
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
PACKAGE OUTLINE
0.2
handbook, full pagewidth
1.0
0.8
0.8
0.6
0.17
0.10
0.1
0.0
0.3
0.1
0.65
0.65
1
0.25
0.15
(5x)
2
2.2
1.8
4
2.2
2.0
Dimensions in mm.
Fig.14 SOT353.
1996 Oct 08
B
5
3
MSA365
0.2 M B
1.35
1.15
A
10
0.2 M A
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
11