INTEGRATED CIRCUITS DATA SHEET TDA8010M; TDA8010AM Low power mixers/oscillators for satellite tuners Objective specification Supersedes data of 1996 Oct 08 File under Integrated Circuits, IC02 1996 Oct 24 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM FEATURES GENERAL DESCRIPTION • Fully balanced mixer with common base input The TDA8010M; TDA8010AM are integrated circuits that perform the mixer/oscillator function in satellite tuners. The devices include a gain controlled IF amplifier that can directly drive two single-ended SAW filters or a differential SAW filter using a three function switchable output. They contain an internal LO prescaler and buffer that is compatible with the input of a terrestrial or satellite frequency synthesizer. They are also suitable for digital TV tuners. These devices are available in small outline packages that give the designer the capability to design an economical and physically small satellite tuner. • Wide input power and frequency range • One-band 2 pin oscillator • Local oscillator buffer and prescaler • SAW filter IF preamplifier with gain control input and switchable output • Bandgap voltage stabilizer for oscillator stability • External IF filter between the mixer output and the IF amplifier input. APPLICATIONS • Down frequency conversion in DBS (Direct Broadcasting Satellite) satellite receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC supply voltage 4.5 5.0 5.5 V ICC supply current − 70 − mA fRF RF frequency range 700 − 2150 MHz fosc oscillator frequency 1380 − 2650 MHz NFM mixer noise figure corrected for image − 10 − dB Gmax maximum total gain mixer plus IF − 40 − dB Gmin minimum total gain mixer plus IF − −17 − dB ORDERING INFORMATION TYPE NUMBER TDA8010M TDA8010AM 1996 Oct 24 PACKAGE NAME SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm 2 VERSION SOT266-1 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM BLOCK DIAGRAM handbook, full pagewidth LOOUT2 LOOUT1 LOGND OSC2 OSC1 OSCGND IFOUT2 VCC IFGND IFOUT1 (20) 1 20 (1) DIVIDE-BY-2 PRE-SCALER 19 (2) 18 (3) STABILIZER LO BUFFER (18) 3 RF INPUT STAGE 17 (4) 16 (5) OSCILLATOR (17) 4 (16) 5 (15) 6 15 (6) (14) 7 SWITCH CONTROL 14 (7) 13 (8) 12 (9) (19) 2 IF AMP OUTPUT SWITCH (13) 8 (12) 9 TDA8010M TDA8010AM 11 (10) VCC RAGC (11) 10 MGE506 The pin numbers given in parenthesis refer to the TDA8010AM. Fig.1 Block diagram. 1996 Oct 24 3 SC VCCM RFIN1 RFIN2 MGND MOUT1 MOUT2 IFIN1 IFIN2 AGC Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM PINNING PINS SYMBOL DESCRIPTION TDA8010M TDA8010AM SC 1 20 IF output switch control VCCM 2 19 supply voltage for mixer RFIN1 3 18 RF input 1 RFIN2 4 17 RF input 2 MGND 5 16 ground for mixer MOUT1 6 15 mixer output 1 MOUT2 7 14 mixer output 2 IFIN1 8 13 IF amplifier input 1 IFIN2 9 12 IF amplifier input 2 AGC 10 11 IF amplifier gain control input IFOUT1 11 10 IF amplifier output 1 IFGND 12 9 ground for IF amplifier VCC 13 8 supply voltage IFOUT2 14 7 IF amplifier output 2 OSCGND 15 6 ground for oscillator OSC1 16 5 oscillator tuning circuit input 1 OSC2 17 4 oscillator tuning circuit input 2 LOGND 18 3 ground for local oscillator buffer LOOUT1 19 2 local oscillator output 1 LOOUT2 20 1 local oscillator output 2 handbook, halfpage handbook, halfpage SC 1 20 LOOUT2 LOOUT2 1 20 SC VCCM 2 19 LOOUT1 LOOUT1 2 19 VCCM RFIN1 3 18 LOGND LOGND 3 18 RFIN1 RFIN2 4 17 OSC2 OSC2 4 17 RFIN2 MGND 5 16 OSC1 OSC1 5 TDA8010M MOUT1 6 15 OSCGND MOUT2 7 14 IFOUT2 IFIN1 8 13 VCC IFIN2 9 12 IFGND AGC 10 OSCGND 6 15 MOUT1 IFOUT2 7 14 MOUT2 VCC 8 13 IFIN1 IFGND 9 12 IFOUT1 10 11 IFOUT1 MGE504 IFIN2 11 AGC MGE505 Fig.2 Pin configuration (TDA8010M). 1996 Oct 24 16 MGND TDA8010AM Fig.3 Pin configuration (TDA8010AM). 4 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VCC supply voltage −0.3 +6.0 V Vi(max) maximum input voltage on all pins −0.3 VCC V Isource(max) maximum output source current − 10 mA tsc maximum short-circuit time on all outputs − 10 s Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −20 +80 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE UNIT 120 K/W HANDLING All pins withstand the ESD test in accordance with “UZW-BO/FQ-A302 (human body model)” and with “UZW-BO/FQ-B302 (machine model)”. 1996 Oct 24 5 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM CHARACTERISTICS VCC = 5 V; Tamb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VCC supply voltage 4.75 5.0 5.25 V ICC supply current 60 70 80 mA fRF RF frequency range 700 − 2150 MHz NF total noise figure (mixer plus IF); VAGC = 0.9VCC; fi = 920 MHz not corrected for image VAGC = 0.9VCC; fi = 2150 MHz − 8 10 dB − 13 15 dB GM available power gain for mixer RL = 2.2 kΩ − 10 − dB Gmax1 maximum total gain (mixer + IFOUT1) fi = 920 MHz; notes 1 and 2 37 40 − dB fi = 2150 MHz; notes 1 and 2 36 38 − dB Gmin1 minimum total gain (mixer + IFOUT1) notes 1 and 2 − −30 −14 dB Gmax2 maximum total gain (mixer + IFOUT2) fi = 920 MHz; notes 1 and 2 36 39 − dB fi = 2150 MHz; notes 1 and 2 35 37 − dB Gmin2 minimum total gain (mixer + IFOUT2) notes 1 and 2 − −30 −15 dB ZI(RF) input impedance (Rs + Ls) from 920 to 2150 MHz 20 30 40 Ω 5 7.5 10 nH ZO(RF) output impedance (Rp//Cp) (open collector) fIF = 480 MHz 8 12 16 kΩ 450 550 650 fF IP3 third-order interception point see Fig.4 −2 +2 − dBm IP2 second-order interception point see Fig.5 10 25 − dBm RL = 50 Ω Mixer Local oscillator output VLO output voltage 87 90 93 dBµV SRF spurious signal on LO output RL = 50 Ω; note 3 with respect to LO output signal − −35 −10 dB LOleak local oscillator leakage RF input − −50 − dBm IF output (mixer) − −35 − dBm VCC = 4.5 to 5.5 V; Tamb = −20 to +80 °C 1380 − 2650 MHz Oscillator fosc oscillator frequency range fosc(max) maximum oscillator frequency fshift oscillator frequency shift fdrift 1996 Oct 24 oscillator frequency drift − 2700 − MHz VCC = 4.75 to 5.25 V; at 2550 MHz − ±350 ±500 kHz VCC = 4.75 to 5.25 V; at 2650 MHz − ±400 ±600 kHz ∆T = 25 °C; at 2550 MHz − −8 −15 MHz ∆T = 25 °C; at 2650 MHz − −8 −16 MHz 6 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners SYMBOL TDA8010M; TDA8010AM PARAMETER ΦN CONDITIONS oscillator phase noise MIN. TYP. MAX. UNIT at 100 kHz 88 92 − dBc at 10 kHz 62 69 − dBc 60 − 625 MHz IF amplifier fIF IF frequency range Gv(max) maximum voltage gain note 1 − 40 − dB Gv(min) minimum voltage gain note 2 − −30 − dB NFIF IF noise figure note 4 − 8 − dB − − 85 dBµV − 50 − Ω 30 33 36 Ω 5 7 9 nH VoIF output voltage level ZO(IF) output impedance ZI(IF) input impedance (Rp//Lp) single-ended SWiso switch isolation note 5 33 36 − dB VSW switch control voltage IF1 on; IF2 off 0.8VCC − VCC V IF1 off; IF2 on 0.2VCC − 0.6VCC V AGC input resistance RI(AGC) differential output 0 − 0.07VCC V see Fig.6 − 4 − kΩ Notes 1. Maximum gain: VAGC = 0.9VCC; fIF = 480 MHz; IF output single-ended. 2. Minimum gain: VAGC = 0.1VCC; fIF = 480 MHz; IF output single-ended. 3. RF input power range = −70 to −20 dBm. 4. VAGC = 0.9VCC; fIF = 480 MHz; Rsource = 100 Ω. 5. Switch isolation is defined at an IF output level of 77 dBµV; fIF = 480 MHz. handbook, halfpage REF handbook, halfpage IM2 IM3 2F1 − F2 390 F1 420 F2 450 2F2 − F1 480 (MHz) FI RF LO − F1 478 964 LO − F2 480 962 MGE507 MGE508 REF is the level if F1 or F2 were at 480 MHz. IP3 = IM3/2 + input level. Input level: 2 × −23 dBm. Output level: 2 × 74 dBµV. IP2 = IM2 + input level. Input level: 2 × −23 dBm. Output level: 2 × 74 dBµV. Fig.4 IP3 measurement method. 1996 Oct 24 (F1 + F2) − LO 484 (MHz) 1926 (MHz) Fig.5 IP2 measurement method. 7 1996 Oct 24 12 kΩ VT 12 kΩ 1 nF 150 Ω 8 3.3 nF 10 nF OSC1 5 OSC2 4 IFOUT1 10 IFGND 9 VCC 8 IFOUT2 7 OSCGND 6 3.3 nF 1.5 pF VCC 150 Ω 22 kΩ BB833 22 kΩ L3 BB833 LOGND 3 TDA8010AM SWITCH CONTROL Fig.6 Application diagram. OUTPUT SWITCH OSCILLATOR LO BUFFER DIVIDE-BY-2 PRE-SCALER VCC RAGC IF AMP RF INPUT STAGE STABILIZER RFIN1 VCCM SC 11 AGC 12 IFIN2 13 IFIN1 10 nF 14 MOUT2 15 MOUT1 16 MGND 17 RFIN2 18 19 20 3.3 pF 3.3 pF VCC MGE509 2.7 pF L2 3.3 kΩ VCC 2.7 pF L1 0.56 pF 33 Ω 3.3 nF 3.3 nF 10 nF Low power mixers/oscillators for satellite tuners L1: 5.5 turns; diameter = 5 mm. L2: 5.5 turns; diameter = 1.5 mm. L3: micro-strip coil; L = 3.5 × 0.4 mm. No ground plane on the other side. Varicaps: Siemens BB833. 2.2 µF 3.3 nF LOOUT1 2 LOOUT2 1 book, full pagewidth 22 kΩ L3 22 kΩ 50 Ω load 3.3 nF Philips Semiconductors Objective specification TDA8010M; TDA8010AM APPLICATION INFORMATION Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1996 Oct 24 EUROPEAN PROJECTION 9 o Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1996 Oct 24 10 Philips Semiconductors Objective specification Low power mixers/oscillators for satellite tuners TDA8010M; TDA8010AM DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 24 11