INTEGRATED CIRCUITS DATA SHEET UAA2077AM Image rejecting front-end for DECT applications Product specification Supersedes data of 1995 Feb 16 File under Integrated Circuits, IC17 1996 Jul 04 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135° respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. FEATURES • Low-noise, wide dynamic range amplifier • Very low noise figure • Dual balanced mixer for over 25 dB on-chip image rejection For instance, signals presented at the RF input at LO + IF frequency are rejected through this signal processing while signals at LO − IF frequency can form the IF signal. An internal switch enables the upper or lower image frequency to be rejected. • IF I/Q combiner at 110 MHz • On-chip quadrature network • RX fast on/off power-down mode • Shrink small outline packaging The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45° and 135° phase shifting and a combining network for image rejection. The IF driver has differential open-collector type outputs. • Very small application (no image filter). APPLICATIONS • 1800 MHz front-end for DECT hand-portable equipment The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers.The centre frequency of the phase shifter is adjustable for maximum image rejection in a given band. The all-pass filters outputs are buffered before being fed to the receive mixers. All RF and IF inputs or outputs are balanced. • Compact digital mobile communication equipment • TDMA receivers. GENERAL DESCRIPTION UAA2077AM contains a high frequency low noise receiver front-end intended to be used in DECT mobile telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. Two pins RXON and SXON are used to control the different power-down modes. A special mode of operation called synthesizer-on mode (SX mode), controlled by pin SXON can be used to minimize the LO pulling when the receiver is turned on. When SXON is HIGH, all internal buffers on the LO path are turned on. Pin SBS allows a selection of whether to reject the upper or lower image frequency. Special care has been taken for fast power-up switching. The main advantage of the UAA2077AM is its ability to provide over 25 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed. QUICK REFERENCE DATA SYMBOL VCC PARAMETER supply voltage CONDITIONS MIN. TYP. MAX. UNIT Tamb = 0 to +70 °C 3.15 4.0 5.3 V over full temperature range 3.6 4.0 5.3 V ICC(RX) receive supply current 21.5 26.5 33.5 mA ICC(PD) supply current in power-down − 0.2 50 µA Tamb operating ambient temperature −30 +25 +85 °C ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2077AM 1996 Jul 04 SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm 2 VERSION SOT266-1 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM BLOCK DIAGRAM handbook, full pagewidth VCCLNA n.c. n.c. 4 7 SXON RXON 9 12 SBS UAA2077AM +45o 11 3 17 RFINA RFINB LNAGND 5 6 LNA +135o 18 8 low-noise amplifier RECEIVE SECTION VCCLO VQUADLO LOGND 15 LOCAL OSCILLATOR SECTION 10 QUADRATURE PHASE SHIFTER 16 14 13 LOINA LOINB MBH154 Fig.1 Block diagram. 1996 Jul 04 3 IFA IF COMBINER IFB Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM PINNING SYMBOL PIN DESCRIPTION n.c. 1 not connected n.c. 2 not connected VCCLNA 3 supply voltage for LNA and IF parts n.c. 1 20 n.c. n.c. 4 not connected n.c. 2 19 n.c. RFINA 5 RF input A (balanced) VCCLNA 3 18 IFB RFINB 6 RF input B (balanced) n.c. 4 17 IFA n.c. 7 not connected LNAGND 8 ground for LNA and IF parts SXON 9 SX mode enable (see Table 1) VQUADLO 10 input voltage for LO quadrature trimming SBS 11 sideband selection RXON 12 RX mode enable (see Table 1) LOINB 13 LO input B (balanced) LOINA 14 LO input A (balanced) VCCLO 15 supply voltage for LO parts LOGND 16 ground for LO parts IFA 17 IF output A (balanced) IFB 18 IF output B (balanced) n.c. 19 not connected n.c. 20 not connected handbook, halfpage RFINA 5 15 VCCLO RFINB 6 n.c. 7 14 LOINA LNAGND 8 13 LOINB SXON 9 12 RXON VQUADLO 10 11 SBS MBH151 Fig.2 Pin configuration. Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. FUNCTIONAL DESCRIPTION Receive section The IF output is differential and of the open-collector type. Typical application will load the output with a differential 1 kΩ load; for example, a 1 kΩ resistor load at each IF output, plus a differential 2 kΩ load consisting of the input impedance of the IF filter or the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 2 kΩ load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type, the whole internal architecture is fully differential. The local oscillator, shifted in phase to 45° and 135°, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45° and 135° respectively, amplified and recombined internally to realize the image rejection. Fast switching, on/off, of the receive section is controlled by the hardware input RXON. Pin SBS allows sideband selection: • fLO > fRF (SBS = 1) • fLO < fRF (SBS = 0). where fRF is the frequency of the wanted signal. 1996 Jul 04 16 LOGND UAA2077AM 4 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM SBS handbook, full pagewidth MIXER VCCLNA IF amplifier +45o IFA RFINA RFINB IF COMBINER MIXER IFB LNA LNAGND IF amplifier +135o MBH152 RXON LOIN Fig.3 Block diagram, receive section. Local oscillator section The local oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. to RX handbook, halfpage The centre frequency of the receive band is adjustable by the voltage on pin VQUADLO. This should be achieved by connecting a resistor between VQUADLO and VCC. Over 25 dB of image rejection can be obtained by an optimum resistor value. VCCLO VQUADLO A synthesizer-on (SX) mode is used to power-up the LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive mode. This mode is active when SXON = 1. QUAD LOGND MBH153 LOINA LOINB There are no internal biassing components attached to the pins LOINA and LOINB. These pins are connected by capacitors to the internal phase shifting network. Fig.4 Block diagram, LO section. 1996 Jul 04 5 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION RXON SXON LOW LOW HIGH X LOW HIGH power-down mode RX mode (receive and LO sections on) SX mode (only LO section on) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCC supply voltage ∆GND Pl(max) Tj(max) MIN. − MAX. UNIT 9 V difference in ground supply voltage applied between LOGND and LNAGND − 0.6 V maximum power input − 20 dBm maximum operating junction temperature − 150 °C Pmax maximum power dissipation − 250 mW Tstg IC storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 120 K/W thermal resistance from junction to ambient in free air HANDLING Every pin withstands the ESD test in accordance with “MIL-STD-883C Class 2 (method 3015.5)”. DC CHARACTERISTICS VCC = 4.0 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins VCCLNA and VCCLO VCC supply voltage Tamb = 0 to +70 °C 3.15 over full temperature range 3.6 4.0 5.3 V 4.0 5.3 V ICC(RX) supply current in RX mode 21.5 26.5 33.5 mA ICC(PD) supply current in power-down mode − 0.2 50 µA ICC(SX) supply current in SX mode 3 5 7 mA Pins RXON, SXON and SBS Vth CMOS threshold voltage − 1.25 − V VIH HIGH level input voltage 0.7VCC − VCC V VIL LOW level input voltage −0.3 − +0.8 V IIH HIGH level static input current pin at VCC − 0.4 V −1 − +1 µA IIL LOW level static input current pin at 0.4 V −1 − +1 µA 1996 Jul 04 note 1 6 Philips Semiconductors Product specification Image rejecting front-end for DECT applications SYMBOL UAA2077AM PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins RFINA and RFINB VI DC input voltage level receive section on − 2.0 − V receive section on − 2.5 − mA Pins IFA and IFB IO DC output current Note 1. The referenced inputs should be connected to a valid CMOS input level. AC CHARACTERISTICS VCC = 4.0 V; Tamb = −30 to +85 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive section (receive section enabled) RiRX RF input resistance (real part of the parallel input impedance) balanced; at 1890 MHz − 60 − Ω CiRX RF input capacitance (imaginary part of the parallel input impedance) balanced; at 1890 MHz − 1 − pF fiRX RF input frequency 1880 − 1900 MHz RLiRX return loss on matched RF input balanced; note 1 11 15 − dB GCP conversion power gain differential RF inputs to differential IF outputs loaded to 1 kΩ differential 17 20 23 dB Grip gain ripple as a function of RF frequency note 2 − 0.2 − dB ∆G/T gain variation with temperature Tamb = −30 to +25 °C; note 2 −20 0 +10 mdB/°C Tamb = +25 to +85 °C; note 2 −40 −30 −20 mdB/°C CP1RX 1 dB compression point differential RF inputs to differential IF outputs; note 1 −26 −23 − dBm DES3 3 dB desensitisation point interferer frequency offset: 3 MHz; differential RF inputs to differential IF outputs; note 1 − −30 − dBm interferer frequency offset: − 20 MHz; differential RF inputs to differential IF outputs; note 1 −28 − dBm IP2DRX 2nd order intercept point differential RF inputs to differential IF outputs; note 2 15 30 − dBm IP3RX 3rd order intercept point differential RF inputs to differential IF outputs; note 2 −23 −17 − dBm NFRX overall noise figure differential RF inputs to differential IF outputs; notes 2 and 3 − 4.3 5.0 dB 1996 Jul 04 7 Philips Semiconductors Product specification Image rejecting front-end for DECT applications SYMBOL UAA2077AM PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ZLRX typical application IF output load impedance balanced − 1 − kΩ RLoRX return loss on matched IF output balanced; note 1 11 15 − dB foRX IF frequency − 110 − MHz IR rejection of image frequency 26 32 − dB 1770 − 2010 MHz fLO < fRF; fIF = 110 MHz; note 4 Local oscillator section (receive section enabled) fiLO LO input frequency RiLO LO input resistance (real part of the parallel input impedance) balanced; at 1780 MHz − 40 − Ω CiLO LO input capacitance (imaginary part of the parallel input impedance) balanced; at 1780 MHz − 2 − pF RLiLO return loss on matched LO input (including power-down mode) note 1 9 12 − dB ∆RLiLO return loss variation ratio between SX and RX modes linear S11 variation; note 1 − 5 − mU PiLO LO input power level −6 −3 +3 dBm RILO reverse isolation 40 − − dB 1 5 20 µs LOIN to RFIN at LO frequency; note 2 Timing tstart start-up time of each block Notes 1. Measured and guaranteed only on UAA2077AM demonstration board at Tamb = 25 °C. 2. Measured and guaranteed only on UAA2077AM demonstration board. 3. This value includes printed-circuit board and balun losses. 4. Measured and guaranteed only on UAA2077AM demonstration board at Tamb = 25 °C. VQUADLO open-circuit. 1996 Jul 04 8 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM INTERNAL PIN CONFIGURATION SYMBOL VCCLNA PIN DC VOLTAGE (V) 3 4.0 EQUIVALENT CIRCUIT VCC RFINA 5 2.0 5 RFINB 6 6 2.0 GND MGG090 LNAGND 8 0 SXON 9 − SBS 11 − VCC 9, 11,12 GND RXON 12 − MGG088 VCC LOINB 13 − 13,14 LOINA 14 − GND MGG089 VCCLO 1996 Jul 04 15 4.0 9 Philips Semiconductors Product specification Image rejecting front-end for DECT applications SYMBOL LOGND PIN DC VOLTAGE (V) 16 0 UAA2077AM EQUIVALENT CIRCUIT VCC IFA 17 2.5 17 18 GND IFB 18 2.5 GND MGG091 1996 Jul 04 10 19 C6 8.2 pF L6 5.6 nH C5 82 pF 3 18 4 17 R6 1200 Ω 16 4V 6.8 pF C1 5 RFIN 1880 to1900 MHz 8.2 pF C2 1.2 pF C3 L1 5.6 nH UAA2077AM L15 6.8 nH 8.2 pF C14 1.2 pF 11 15 7 14 8 13 9 12 10 11 SXON 2 C30 8.2 pF C31 82 pF L12 220 nH 120 nH L13 IF 110 MHz C23 6.8 pF C24 C25 22 pF IFB L14 120 nH R4 560 kΩ 1 C27 8.2 pF SBS 2 C8 8.2 pF R7 1200 Ω C22 IFA 120 pF 4V VQUADLO 1 6 L11 220 nH 22 pF C26 Philips Semiconductors 2 4V Image rejecting front-end for DECT applications 20 APPLICATION INFORMATION 1996 Jul 04 1 RXON C19 8.2 pF C29 8.2 pF 3.3 nH L9 C21 1.8 pF C28 1 nF 2 C7 8.2 pF R3 560 kΩ 1 C9 8.2 pF R5 560 kΩ C20 1.8 pF LOIN 1770 to 1790 MHz 4V MGC631 - 1 Fig.5 Application diagram. Product specification Figure 5 illustrates the electrical diagram of the UAA2077AM Philips demonstration board for DECT applications. All matching is to 50 Ω for measurement purposes. Different values will be used in a real application. UAA2077AM handbook, full pagewidth 3.3 nH L10 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1996 Jul 04 EUROPEAN PROJECTION 12 o Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1996 Jul 04 13 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 04 14 Philips Semiconductors Product specification Image rejecting front-end for DECT applications UAA2077AM NOTES 1996 Jul 04 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 926 5361, Fax. +7 095 564 8323 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com/ps/ (1) UAA2077AM_4 June 26, 1996 11:51 am © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 647021/1200/04/pp16 Date of release: 1996 Jul 04 Document order number: 9397 750 00919