PHILIPS BLU99

DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99
BLU99/SL
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the u.h.f.
band. The transistor is also very
suitable for application in the
900 MHz mobile radio band.
• multi-base structure and diffused
emitter-ballasting resistors for an
optimum temperature profile;
• gold metallization ensures
excellent reliability.
The BLU99 has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud. The BLU99/SL is a
studless version (SOT122D).
QUICK REFERENCE DATA
R.F. performance at Th = 25 °C in a common-emitter class-B circuit.
MODE OF OPERATION
narrow band; c.w.
VCE
V
f
MHz
PL
W
12,5
470
5
>
12,5
900
4
typ.
PIN CONFIGURATION
10,5 >
PIN
4
4
1
7,0 typ.
60
60
PINNING - SOT122A; SOT122D
fpage
age
ηC
%
Gp
dB
3
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MBK187
2
MSB055
Fig.1
Simplified outline.
SOT122A
(BLU99).
Fig.2
Simplified outline.
SOT122D
(BLU99/SL).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
VCBO
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open collector)
VEBO
max.
3 V
IC;IC(AV)
max.
0,8 A
Collector current
d.c. or average
peak value; f > 1 MHz
D.C. power dissipation up to Tmb = 50 °C
ICM
max.
2,5 A
Ptot (d.c.)
max.
12,5 W
19 W
R.F. power dissipation
f > 1 MHz; Tmb = 25 °C
Ptot (r.f.)
max.
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
MDA372
1
MDA373
28
handbook, halfpage
Tmb = 50 °C
handbook, halfpage
200 °C
Ptot
Th = 70 °C
IC
(W)
III
(A)
20
II
12
10−1
I
4
10
1
VCE (V)
0
102
20
40
60
80
100
Th (°C)
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz).
III Short-time r.f. operation during mismatch (f > 1 MHz).
Rth mb-h = 0,6 K/W.
Fig.3 D.C. SOAR.
Fig.4 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 9 W; Tmb = 25 °C)
From junction to mounting base
(d.c. dissipation)
Rth j-mb(dc)
=
10 K/W
Rth j-mb(rf)
=
7,5 K/W
Rth mb-h
=
0,6 K/W
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
March 1993
3
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 10 mA
V(BR)CBO
>
36 V
V(BR)CEO
>
16 V
V(BR)EBO
>
3 V
ICES
<
5 mA
ESBR
>
1 mJ
hFE
>
typ.
25
100
fT
typ.
4,0 GHz
Cc
typ.
7,5 pF
Cre
typ.
5 pF
Ccs
typ.
1,2 pF
Collector-emitter breakdown voltage
open base; IC = 20 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 16 V
Second breakdown energy; L = 25 mH; f = 50 Hz
RBE = 10 Ω
D.C. current gain(2)
IC = 0,6 A; VCE = 10 V
Transition frequency at f = 500 MHz(1)
IC = 0,6 A; VCE = 12,5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 12,5 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12,5 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: tp = 50 µs; δ < 0,01.
2. Measured under pulse conditions: tp = 300 µs; δ < 0,01.
March 1993
4
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA374
120
MDA375
5
handbook, halfpage
handbook, halfpage
fT
(GHz)
4
hFE
80
3
2
40
1
0
0
0
1.6
0.8
IC (A)
0
2.4
Fig.6
MDA376
16
Cc
handbook, halfpage
(pF)
14
12
10
8
6
0
4
8
12
16
20
VCB (V)
Fig.7 IE = ie = 0; f = 1 MHz; typ. values.
March 1993
0.8
1.2
1.6
2
IE (A)
VCE = 10 V; Tj = 25 °C; typ. values.
Fig.5
0.4
5
VCB = 12,5 V; f = 500 MHz; Tj = 25 °C;
typ. values.
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
APPLICATION INFORMATION (part I)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; Th = 25 °C.
MODE OF OPERATION
VCE
V
PL
W
narrow band; c.w.
12,5
5
C1
handbook, full pagewidth
,,
,,
C2
C4
C3
L3
Gp
dB
ηC
%
IC
A
<
0,45 >
10,5 <
0,665 >
60
typ.
0,32 typ.
12
0,60
66
,,
L6
T.U.T.
L1
50 Ω
PS
W
typ.
typ.
C8
L7
50 Ω
C7
L5
L2
C5
C6
R2
R1
L4
+VCC
MDA365
Fig.8 Class-B test circuit at f = 470 MHz.
List of components:
C1 = 2,7 pF multilayer ceramic chip capacitor(1)
C2 = C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001)
C3 = 7,5 pF multilayer ceramic chip capacitor(1)
C4 = 2-9 pF film dielectric trimmer (cat.no. 2222 809 09002)
C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101)
C6 = 100 nF metallized film capacitor (cat. no. 2222 352 45104)
L1
= stripline, 22,5 mm × 6,0 mm
L2
= 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 × 5 mm
L3
= L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L5
= 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 × 5 mm
L6
= stripline, 10,0 mm × 6,0 mm
L7
= 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 × 5 mm
R1 = R2 = 10 Ω metal film resistor, 0,25 W
L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74) and a
thickness of 1⁄16 inch.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
6
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
100 mm
handbook, full pagewidth
58 mm
rivets
L3
R1
L2
C1 C3
L7
L1
C2
L6
C8
L5
L4
C4
C6
C5
C7
+VCC
R2
MDA366
The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is
unetched copper to serve as ground plane. Earth connections are made by hollow rivets.
Fig.9 Printed circuit board and component layout for 470 MHz.
March 1993
7
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA377
8
MDA378
20
Gp
100
ηC
handbook, halfpage
handbook, halfpage
VCE = 12.5 V
PL
(W)
(%)
(dB)
16
80
6
12
4
60
ηC
ηC
7.5 V
8
40
Gp
Gp
2
20
4
0
0
0
0.4
0.8
PS (W)
f = 470 MHz; class-B operation; Th = 25 °C; typ. values.
2
4
6
PL (W)
f = 470 MHz; class-B operation; Th = 25 °C; typ. values.
 : VCE = 12,5 V;
− − − − : VCE = 7,5 V.
Fig.10 Output power.
Fig.11 Power gain and efficiency;
RUGGEDNESS:
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
March 1993
0
0
1.2
8
8
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA379
4
MDA380
10
ZL
handbook, halfpage
handbook, halfpage
ri
Zi
RL
(Ω)
(Ω)
8
2
6
xi
4
0
2
−2
400
440
480
520
f (MHz)
0
400
560
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
f = 400-520 MHz; typical values.
MDA381
15
Gp
(dB)
14
13
12
11
480
520
f (MHz)
560
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
f = 400-520 MHz; typical values.
Fig.14 Power gain.
March 1993
480
520
f (MHz)
560
Fig.13 Load impedance (series components).
handbook, halfpage
440
440
VCE = 12,5 V; PL = 5 W; Th = 25 °C;
f = 400-520 MHz; typical values.
Fig.12 Input impedance (series components).
10
400
XL
9
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
APPLICATION INFORMATION (part II)
R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; Th = 25 °C
MODE OF OPERATION
VCE
V
PL
W
PS
W
GP
dB
IC
A
ηC
%
narrow band; c.w.
12,5
4
typ. 0,8
typ. 7,0
typ. 0,54
typ. 60
handbook, full pagewidth
,,
,,,
,,
,,,,,,,
,,,,,,,
C4
C6
L6
C10
L7
L10
BLU99
C1
50 Ω
L1
L2
L8
C2
C12
50 Ω
L5
C3
C11
C13
C5
C7
L3
R2
R1
L9
L4
C9
C8
+VCC = 12.5 V
Fig.15 Class-B test circuit at f = 900 MHz.
March 1993
10
MDA382
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
List of components:
C1
= C12 = 33 pF multilayer ceramic chip capacitor(1)
C2
= C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3
= C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001)
C4
= C5 = C10 = 6,2 pF multilayer ceramic chip capacitor(1)
C6
= 1 pF multilayer ceramic chip capacitor(1)
C7
= 10 pF ceramic feed-through capacitor
C8
= 330 pF ceramic feed-through capacitor
C9
= 2,2 µF tantalum electrolytic capacitor
L1
= stripline, 21,0 mm × 1,85 mm
L2
= stripline, 5,0 mm × 1,85 mm
L3
= 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L4
= L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642)
L5
= stripline, 11,3 mm × 6,0 mm
L6
= stripline, 10,0 mm × 6,0 mm
L7
= stripline, 15,9 mm × 1,85 mm
L8
= 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm
L10 = stripline, 28,0 mm × 1,85 mm
R1
= R2 = 10 Ω metal film resistor, 0,25 W
L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric
(εr = 2,74) and thickness of 1⁄32 inch.
Note
1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
11
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
128.5 mm
handbook, full pagewidth
soldered
copperstraps
E
B
C
80 mm
E
rivets
L9
C7
L4
C8
VCC
R1
R2
L8
L3
E
C4
B
C1
C5
C2
C9
C10
C
C12
C6
E
C11
C3
C13
MDA383
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a
ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under
the emitters to provide a direct contact between the copper on the component side and the ground plane.
Fig.16 Printed circuit board and component layout for a 900 MHz test circuit.
RUGGEDNESS
The device is capable of withstanding a load mismatch
with VSWR = 50 (all phases) up to a supply voltage of
15,5 V at rated load power.
March 1993
12
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA384
5
MDA385
10
Gp
handbook, halfpage
handbook, halfpage
PL
4
(dB)
8
3
6
2
4
1
2
(W)
100
ηC
(%)
80
Gp
60
ηC
40
20
0
0
0
0
0.4
0.8
1.2
PS (W)
0
1.6
2
3
4
5
PL (W)
f = 900 MHz; VCE = 12,5 V; class-B operation;
Th = 25 °C; typ. values.
f = 900 MHz; VCE = 12,5 V; class-B operation;
Th = 25 °C; typ. values.
Fig.17 Output power.
March 1993
1
Fig.18 Power gain and efficiency.
13
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
MDA386
6
MDA387
14
handbook, halfpage
handbook, halfpage
xi
Zi
(Ω)
ZL
(Ω)
RL
10
4
ri
6
2
XL
0
800
880
840
920
2
800
960
1000
f (MHz)
840
880
920
960
1000
f (MHz)
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W;
Th = 25 °C; typ. values.
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W;
Th = 25 °C; typ. values.
Fig.19 Input impedance (series components).
Fig.20 Load impedance (series components).
MDA388
10
Gp
handbook, halfpage
(dB)
9
8
7
6
5
800
850
900
950
1000
f (MHz)
Fig.21 Power gain.
March 1993
14
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
PACKAGE OUTLINES
Studded ceramic package; 4 leads
SOT122A
D
A
ceramic
BeO
metal
Q
c
N1
A
D1
w1 M A
D2
N
M
W
N3
M1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M1
M
N
N1
max.
N3
Q
W
w1
α
mm
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24
6.93
27.56
25.78
9.91
9.14
3.18
2.66
1.66
1.39
11.82
11.04
1.02
3.86
2.92
3.38
2.74
8-32
UNC
0.381
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122A
March 1993
EUROPEAN
PROJECTION
15
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
Studless ceramic package; 4 leads
SOT122D
D
A
Q
c
D2
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
H
L
Q
α
mm
4.17
3.27
5.85
5.58
0.18
0.14
7.50
7.23
7.24
6.98
27.56
25.78
9.91
9.14
1.58
1.27
90°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-18
SOT122D
March 1993
EUROPEAN
PROJECTION
16
Philips Semiconductors
Product specification
BLU99
BLU99/SL
UHF power transistor
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
17