DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS LXE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) Class AB (CW) 1.85 ICQ (A) 24 PL1 (W) ≥27 0.3 GPO (dB) ≥8 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange 1 ook, 4 columns Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions. VCE (V) c b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LXE18300X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current − 6 A Ptot total power dissipation − 57 W Tstg storage temperature range −65 +200 °C Tj operating junction temperature Tsld soldering temperature Tmb = 75 °C t ≤ 10 s; note 1 − 200 °C − 235 °C Note 1. Up to 0.2 mm from ceramic. MRA433 10 MRA442 100 handbook, halfpage Ptot (W) IC (A) 80 1 60 40 (1) 10−1 20 10−2 1 10 VCE (V) 0 102 0 50 100 150 Ptot max = 57 W. Tmb ≤ 75 °C. (1) Region of permissible DC operation. Fig.3 Fig.2 DC SOAR. Maximum power dissipation derating as a function of mounting base temperature. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 200 Tmb (oC) 3 Philips Semiconductors Product specification NPN microwave power transistor LXE18300X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb from junction to mounting base Tj = 100 °C 1.7 K/W Rth mb-h from mounting base to heatsink note 1 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. MAX. UNIT VCB = 20 V; IE = 0 − 3 mA VCB = 40 V; IE = 0 − 30 mA VCE = 30 V; RBE = 220 Ω − 30 mA ICER collector cut-off current ICEO collector cut-off current VCE = 20 V; IB = 0 − 30 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 300 µA hFE DC current gain VCE = 3 V; IC = 3 A 20 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. f (GHz) MODE OF OPERATION Class AB (CW) 1.85 ICQ (A) VCE (V) 24 0.3 PL1 (W) ≥27; typ. 30 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 GPO (dB) ≥8; typ. 9 Philips Semiconductors Product specification NPN microwave power transistor LXE18300X PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 10.3 10.0 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.4 SOT439A. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LXE18300X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LXE18300X NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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