INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier (PA) overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to operate at 4.8 V battery supply. These ICs also include a power sensor driver so that no directional coupler is required in the power control loop. • Low output noise floor of PA < −129 dBm/Hz in GSM RX band Both ICs have the same performance but are issued from different wafer fabs. • 35.5 dB gain • 0 dBm input power • Gain control range >55 dB • Wide operating temperature range −20 to +85 °C The PAs require only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. They can be switched off and their power controlled by monitoring the actual drain voltage applied to the amplifier stages. • LQFP 48 pin package • Compatible with power ramping controller PCA5075 • Compatible with GSM RF transceiver SA1620. APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applications • 900 MHz TDMA systems. QUICK REFERENCE DATA PARAMETER (1) SYMBOL MIN. TYP. MAX. UNIT VDD positive supply voltage − 4.2 − V IDD positive peak supply current − 1.8 − A Pout(max) maximum output power − 35.5 − dBm Tamb operating ambient temperature −20 − +85 οC Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2010G CGY2011G 1996 Jul 08 PACKAGE NAME DESCRIPTION VERSION LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2 2 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G BLOCK DIAGRAM VDD1 handbook, full pagewidth 29 VDD2 VDD3 33 42 18 DETO/VDD5 SENSOR DRIVER RFI 27 6,7.8 RFO/VDD4 CGY2010G CGY2011G (1) 31 19 VGG1 VGG2 GND MGB761 (1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48. Fig.1 Block diagram. PINNING SYMBOL PIN DESCRIPTION GND 1 to 5 ground RFO/VDD4 6 to 8 power amplifier output and fourth stage supply voltage GND 9 to 17 ground DETO/VDD5 18 power sensor output and supply voltage VGG2 19 fourth stage negative gate supply voltage GND 20 to 26 ground RFI 27 power amplifier input GND 28 ground VDD1 29 first stage supply voltage GND 30 ground VGG1 31 first three stages negative gate supply voltage GND 32 ground VDD2 33 second stage supply voltage GND 34 to 41 VDD3 42 GND 43 to 48 1996 Jul 08 ground third stage supply voltage ground 3 Philips Semiconductors Objective specification 37 GND 38 GND 39 GND 40 GND 41 GND 42 VDD3 43 GND 44 GND 45 GND 46 GND 48 GND handbook, full pagewidth CGY2010G; CGY2011G 47 GND GSM 4 W power amplifiers GND 1 36 GND GND 2 35 GND GND 3 34 GND GND 4 33 VDD2 GND 5 32 GND RFO/VDD4 6 RFO/VDD4 7 31 VGG1 CGY2010G CGY2011G 30 GND RFO/VDD4 8 29 VDD1 GND 9 28 GND GND 10 27 RFI Fig.2 Pin configuration. 1996 Jul 08 4 24 GND 23 GND GND 22 GND 21 GND 20 VGG2 19 GND 17 DETO/VDD5 18 GND 16 GND 15 25 GND GND 14 26 GND GND 12 GND 13 GND 11 MGB760 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G The amplifier bias is set by means of a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress for the amplifier. FUNCTIONAL DESCRIPTION Operating conditions The CGY2010G and CGY2011G are designed to meet the European Telecommunications Standards Institute (ETSI) GSM documents, the “ETS 300 577 specification”, which are defined as follows: Power sensor driver The power sensor driver is a buffer amplifier that delivers a signal to the DETO output pin which is proportional to the amplifier power. This signal can be detected by external diodes for power control purpose. As the sensor signal is taken from the input of the last stage of the PA, it is isolated from disturbances at the output by the reverse isolation of the PA output stage. • ton = 542.8 µs • T = 4.3 ms • Duty cycle = 1/8 The devices are specifically designed for pulse operation allowing the use of a LQFP48 plastic package. Impedance mismatch at the PA output therefore, does not significantly influence the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. Consequently the cost and space of using a directional coupler are saved. Power amplifier The power amplifier consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL PARAMETER MIN. MAX. UNIT VDD positive supply voltage − 7 V VGG negative supply voltage − −10 V Tj(max) maximum operating junction temperature − 150 °C Tstg IC storage temperature − 150 °C Ptot total power dissipation − 1.5 W THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c PARAMETER thermal resistance from junction to case; note 1 Note 1. This thermal resistance is measured under GSM pulse conditions. 1996 Jul 08 5 VALUE UNIT 32 K/W Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G DC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; peak current values during burst; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD positive supply voltage 0 4.2 5.5 V IDD positive peak supply current − 1.8 2.2 A Pins VGG1 and VGG2 VGG1 negative supply voltage note 1 − −2 − V VGG2 negative supply voltage note 1 − −2 − V IGG1 + IGG2 negative peak supply current − 2.5 5 mA Note 1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. 1996 Jul 08 6 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G AC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Power amplifier −1.5 − − 880 34.5 Pin input power S11 input return loss fRF RF frequency range Pout(max) maximum output power Tamb = −20 to +85 °C; VDD = 4.2 V 32.5 − − dBm η efficiency VDD = 4.2 V − 45 − % Pout(min) minimum output power VDD < 0.1 V − − −20 dBm NRX output noise in RX band fRF = 925 MHz at Pout(max) − − −117 dBm/Hz fRF = 935 MHz at Pout(max) − − −129 dBm/Hz fRF = 960 MHz at Pout(max) − − −129 dBm/Hz note 1; 50 Ω source Tamb = 25 °C; VDD = 4.5 V +1.5 dBm − −6 dB − 915 MHz 35.5 − dBm H2 2nd harmonic level − −33 −30 dBc H3 3rd harmonic level − −40 −37 dBc Stab stability note 2 − − −70 dBc Power sensor driver Pout(DET) sensor driver output power RL = 100 Ω; relative to PA output power into 50 Ω load − −23 − dBc ∆Pout(DET) driver output power variation load VSWR < 6 : 1 at PA output − − 2 dB Notes 1. Including the 100 Ω resistor connected in parallel at the power amplifier input on the evaluation board. 2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 second period. 1996 Jul 08 7 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G APPLICATION INFORMATION handbook, full pagewidth 10 pF 48 47 46 45 44 43 42 41 40 39 38 37 VDD3 1 2 35 3 34 4 VDD2 5 PA output 8 (1) pF 33 pF 10 (1) 6 pF 7 RFO/VDD4 8 (1) CGY2010G CGY2011G VGG1 VDD1 9 10 TRL3 36 RFI (3) 27 pF 1 nF 33 47 Ω 32 31 30 39 pF 1 nF 28 100 pF X7R 27 26 12 25 DETO VGG2 10 nH 100 Ω 13 14 15 16 17 18 19 20 21 22 23 24 −2 V TRL1 (2) 29 11 (4) TRL2 Zc = 50 Ω PA input 1.5 pF 100 pF 10 pF 10 nF 39 Ω 100 Ω 22 nH 100 pF 100 Ω 1 kΩ Vcontrol 0.8 to 3 V BSR14 PMOS Ron < 0.1 Ω PHP109 BAS70 1 kΩ Vdiode DC output 560 Ω 1 nF BAS70 Vbat +4.8 V MGB764 −90 µA 39 pF 1.25 V (1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603. (2) TRL1: width: 0.3 mm; length: 16 mm. (3) TRL2: width: 0.3 mm; length: 6.3 mm. (4) TRL3: width: 0.3 mm; length: 20 mm. Fig.3 Evaluation board schematic (FR4, 0.8 mm). 1996 Jul 08 8 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2 c y X 36 25 A 37 24 ZE Q e E HE A A2 (A 3) A1 w M pin 1 index θ bp Lp L 13 48 detail X 12 1 ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp Q v w y mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 7.1 6.9 0.5 9.15 8.85 9.15 8.85 1.0 0.75 0.45 0.69 0.59 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 93-06-15 94-12-19 SOT313-2 1996 Jul 08 EUROPEAN PROJECTION 9 o Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). 1996 Jul 08 10 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 647021/1200/02/pp12 Date of release: 1996 Jul 08 Document order number: 9397 750 00955