WEITRON BSS138W

BSS138W
N-Channel POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
3
1
2
1
GATE
Description:
* Typical applications are dc–dc converters,
power management in portable and battery–powered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
SOT-323(SC-70)
2 SOURCE
Features:
* Simple Drive Requirement
* Small Package Outline
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = (TA=25°C)
ID
200
mA
Pulsed Drain Current (tp ≤ 10µS)
IDM
800
mA
Power Dissipation (TA=25°C)
PD
150
mW
Maximax Junction-to-Ambient
R θJA
556
°C/W
TJ
+150
°C
Tstg
-55 to +150
°C
TL
260
°C
Operating Junction Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Device Marking
BSS138W = J1
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BSS138W
Electrical Characteristics (TA=25°C Unless otherwise noted)
Min
Typ
Max
Unit
V(BR)DSS
50
-
-
V
Gate-Threshold Voltage
VDS=VGS, ID=1.0mA
VGS (th)
0.5
-
1.5
V
Gate-Source Leakage Current
VGS=±20V
IGSS
-
-
±0.1
µA
Drain-Source Leakage Current
VDS=25V, VGS=0
VDS=50V, VGS=0
IDSS
-
-
0.1
0.5
µA
RDS (on)
-
5.6
-
10
3.5
Ω
gfs
100
-
-
mS
Input Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Ciss
-
40
50
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Coss
-
12
25
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Crss
-
3.5
5.0
Turn-On Time
VDD=30V, ID=200mA
td(on)
-
-
20
Turn-Off Time
VDD=30V, ID=200mA
td(off)
-
-
20
Characteristic
Symbol
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Static Drain-Source On-Resistance
VGS=2.75V, ID < 200mA, TA = -40°C to +85°C
VGS=5.0V, ID=200mA
Forward Transconductance
VDS=25V, ID=200mA, f = 1.0kHz
Dynamic
pF
Switching2
ns
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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BSS138W
Characteristics Curve
°
°
°
°
Fig.2 Transfer Characteristics
Fig.1 On–Region Characteristics
°
°
Fig.3 On–Resistance Variation with
Temperature
Fig.4 Threshold Voltage Variation
with Temperature
°
Fig.5 Gate Charge
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BSS138W
Characteristics Curve
°
°
°
°
°
°
Fig.6 On–Resistance versus Drain Current
Fig.7 On–Resistance versus Drain Current
°
°
°
°
°
°
Fig.8 On–Resistance versus Drain Current
°
°
Fig.9 On–Resistance versus Drain Current
°
Fig.10 Body Diode Forward Voltage
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Fig.11 Capacitance
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10-Apr-07
BSS138W
SOT-323 Outline Demensions
Unit:mm
A
B
T OP V IE W
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
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L
M
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SOT-323
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
10-Apr-07