DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. 3 handbook, halfpage APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner 1 2 - Transceiver switching. Top view MSB003 Marking code: S3p. DESCRIPTION Fig.1 Simplified outline SOT23 (BF1107). The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. 3 handbook, halfpage 3 1 PINNING 2 DESCRIPTION 1 PIN BF1107 BF1107W 1 drain drain 2 source source 3 gate gate 2 Top view MAM062 Marking code: W3. Fig.2 Simplified outline SOT323 (BF1107W). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS S21(on)2 S21(off)2 losses (on-state) RDSon drain-source on-resistance VGS = 0; ID = 1 mA VGSoff pinch-off voltage ID = 20 µA; VDS = 1 V RS = RL = 50 Ω; f = 50 to 860 MHz isolation (off-state) MIN. TYP. MAX. UNIT − − 2.5 dB 30 − − dB − 12 20 Ω − −3 −4.5 V CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 May 14 2 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 3 V VSD source-drain voltage − 3 V VDG drain-gate voltage − 7 V VSG source-gate voltage − 7 V ID drain current − 10 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 VALUE UNIT 260 K/W Note 1. Soldering point of the gate lead. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)GSS gate-source breakdown voltage CONDITIONS MIN. TYP. MAX. UNIT VDS = 0; IGS = 0.1 mA 7 − − V VGSoff gate-source pinch-off voltage VDS = 1 V; ID = 20 µA − −3 −4.5 V IDSX drain-source leakage current VGS = −5 V; VDS = 2 V − − 10 µA IGSS gate cut-off current VGS = −5 V; VDS = 0 − − 100 nA DYNAMIC CHARACTERISTICS Common gate; Tamb = 25°C. SYMBOL S21(on)2 S21(off)2 PARAMETER losses (on-state) isolation (off-state) CONDITIONS MIN. TYP. MAX. UNIT VSG = VDG = 0; RS = RL = 50 Ω; f = 50 to 860 MHz − − 2.5 dB VSG = VDG = 0; RS = RL = 75 Ω; f = 50 to 860 MHz − − 3.5 dB VSG = VDG = 5 V; RS = RL = 50 Ω; f = 50 to 860 MHz 30 − − dB VSG = VDG = 5 V; RS = RL = 75 Ω; f = 50 to 860 MHz 30 − − dB RDSon drain-source on-resistance VGS = 0; ID = 1 mA − 12 20 Ω Cig input capacitance VSG = VDG = 5 V; f = 1 MHz − 0.9 − pF VSG = VDG = 0; f = 1 MHz − 1.5 2 pF VSG = VDG = 5 V; f = 1 MHz − 0.9 − pF VSG = VDG = 0; f = 1 MHz − 1.5 2 pF Cog 1999 May 14 output capacitance 3 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W MBK831 0 MBK832 0 handbook, halfpage 2 S handbook, halfpage 2 S 21(on) (dB) −1 21(off) (dB) (2) (1) −20 −2 −3 −40 (2) −4 (1) −5 10 102 −60 10 103 f (MHz) VSG = VDG = 0. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. Fig.3 Fig.4 MBK833 0 handbook, halfpage RL (dB) −5 −10 −15 (1) (2) −25 10 102 f (MHz) 103 VSG = VDG = 0. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. Fig.5 Input and output return losses (on-state) as function of frequency; typical values. 1999 May 14 f (MHz) 103 VSG = VDG = 5 V. (1) RS = RL = 50 Ω. (2) RS = RL = 75 Ω. Losses (on-state) as a function of frequency; typical values. −20 102 4 Isolation (off-state) as a function of frequency; typical values. Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 14 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 May 14 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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