PHILIPS BLU60

DISCRETE SEMICONDUCTORS
DATA SHEET
BLU60/12
UHF power transistor
Product specification
March 1986
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor in SOT-119 envelope
primarily intended for use in mobile
radio transmitters in the 470 MHz
communications band.
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
The transistor has a 6-lead flange
envelope with a ceramic cap. All
leads are isolated from the flange.
• internal matching to achieve an
optimum wideband capability and
high power gain.
• gold metallization ensures
excellent reliability.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in a common-emitter class-B circuit
MODE OF OPERATION
narrow band; c.w.
VCE
V
f
MHz
PL
W
Gp
dB
ηC
%
12,5
470
60
> 4,4
> 55
PIN CONFIGURATION
PINNING
PIN
handbook, halfpage
1
2
3
4
5
6
DESCRIPTION
1
emitter
2
emitter
3
base
4
collector
5
emitter
6
emitter
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1986
2
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
VCBOM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16,5 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
d.c. or average
IC
max.
12 A
(peak value); f > 1 MHz
ICM
max.
36 A
Ptot
max.
110 W
Collector current
Total power dissipation
at Tmb = 25 °C; f > 1 MHz
Storage temperature
Tstg
Operating junction temperature
Tj
−65 to + 150 °C
max.
200 °C
MDA345
200
handbook, halfpage
Prf
(W)
150
II
100
I
50
0
0
40
80
120
160
200
Th ( °C)
I Continuous operation (f > 1 MHz).
II Short-time operation during mismatch (f > 1 MHz).
Fig.2 Power/temperature derating curves.
MAXIMUM THERMAL RESISTANCE
Dissipation = 72 W; Tamb = 25 °C
From junction to mounting base (r.f. operation)
Rth j-mb
max.
1,4 K/W
From mounting base to heatsink
Rth mb-h
max.
0,2 K/W
March 1986
3
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 100 mA
V(BR)CBO
min.
36 V
V(BR)CEO
min.
16,5 V
V(BR)EBO
min.
4 V
ICES
max.
44 mA
ESBR
min.
15 mJ
min.
15
typ.
60
Collector-emitter breakdown voltage
open base; IC = 200 mA
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
VBE = 0; VCE = 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain
VCE = 10 V; IC = 8 A
hFE
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 12,5 V
Cc
typ.
170 pF
Cre
typ.
100 pF
Ccf
typ.
3 pF
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12,5
Collector-flange capacitance
MDA336
100
MDA337
400
handbook, halfpage
handbook, halfpage
hFE
Cc
(pF)
80
VCE = 12.5 V
300
10 V
60
200
40
100
20
0
0
0
Fig.3
March 1986
10
20
30
IC (A)
40
0
D.C. current gain versus collector current;
Tj = 25 °C.
Fig.4
4
4
8
12
16
20
VCB (V)
Output capacitance versus VCB; IE = ie = 0;
f = 1 MHz.
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
APPLICATION INFORMATION
R.F. performance at Th = 25 °C in a common-emitter class-B circuit
MODE OF OPERATION
narrow band; c.w.
VCE
V
f
MHz
PL
W
Gp
dB
ηC
%
12,5
470
60
> 4,4
typ. 5,5
> 55
typ. 62
handbook, full pagewidth
,,
,,
,,,,,
,,,,
L5
C1
50 Ω
C3
C7
C12
L6
C5
50 Ω
L2
L1
C6
C2
C13
D.U.T.
C4
C11
L7
C8
L3
R1
C9
L4
L8
R2
+VCC
C10
MDA338
Fig.5 Class-B test circuit at f = 470 MHz.
List of components:
C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 12 pF multilayer ceramic chip capacitor(1)
C4 = C5 = 8, 2 pF multilayer ceramic chip capacitor(2)
C6 = C7 = 15 pF multilayer ceramic chip capacitor(1)
C8 = 110 pF multilayer ceramic chip capacitor(1)
C9 = 3 × 100 nF multilayer ceramic chip capacitor in parallel
C10 = 2,2 µF (35 V) electrolytic capacitor
C12 = 5,6 pF multilayer ceramic chip capacitor(1)
L1 = 34,6 Ω stripline (17 mm × 4 mm)
L2 = L5 = 25,3 stripline (6 mm × 6 mm)
L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2 × 5 mm
L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L6 = 29,2 Ω stripline (25,5 mm × 5 mm)
L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2 × 5 mm
R1 = 1 Ω ± 5% (0,4 W) metal film resistor
R2 = 10 Ω ± 5% (1,0 W) metal film resistor
Notes
1. American Technical Ceramics capacitor type B or capacitor of the same quality.
2. Idem type A.
March 1986
5
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
Striplines are on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,2); thickness 1/32 inch.
97 mm
handbook, full pagewidth
rivets
rivets
70 mm
Cu - straps
+VCC
L8
L4
R2
R1
C8
C10
C9
L7
C1
C3
L3
C5
L1
L2
C7
C13
L6
L5
C4
C12
C6
C2
C11
MDA339
The circuit and the components are on one side of the PTFE fibre-glass board; the other side is
unetched copper serving as a ground plane. Earth connections are made by fixing screws, hollow rivets
and copper straps around the board and under the bases to provide a direct contact between the copper
on the component side and the ground plane.
Fig.6 Printed circuit board and component layout for 470 MHz class-B test circuit.
March 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
MDA346
100
PL
MDA347
6
handbook, halfpage
handbook, halfpage
Gp
(dB)
(W)
80
70
ηC
(%)
Gp
60
5
60
ηC
40
50
4
20
3
0
0
10
20
30
PS (W)
40
10
Typical values; VCE = 12,5 V; f = 470 MHz;
Th = 25 °C () and 70 °C (− − −); Rth mb-h = 0,2 K/W;
class-B operation.
50
70
PL (W)
40
90
Typical values; VCE = 12,5 V; f = 470 MHz;
Th = 25 °C () and 70 °C (− − −); Rth mb-h = 0,2 K/W;
class-B operation.
Fig.7 Load power versus source power.
Fig.8 Power gain and efficiency versus load power.
RUGGEDNESS
The BLU60/12 is capable of withstanding a full load
mismatch (VSWR = 50 through all phases) up to 70 W
under the following conditions; VCE = 15,5 V; f = 470 MHz;
Th = 25 °C; Rth mb-h = 0,2 K/W.
March 1986
30
7
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
MDA348
6
MDA349
2
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
xi
4
ri
0
−2
2
ri
xi
0
400
440
480
f (MHz)
−4
400
520
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz;
Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation.
MDA350
(dB)
8
6
4
2
450
500
550
f (MHz)
600
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz;
Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation.
Fig.11 Power gain versus frequency.
March 1986
f (MHz)
520
Fig.10 Load impedance (series components).
handbook, halfpage
0
400
480
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz;
Th = 25 °C; Rth mb-h = 0,2 K/W; class-B operation.
Fig.9 Input impedance (series components).
10
Gp
440
8
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
SOT119A
A
F
q
C
U1
B
H1
w2 M C
b2
2
H
c
4
6
p
U2
D1
U3
D
w1 M A B
A
1
3
5
b1
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
b2
mm
7.39
6.32
5.59
5.33
5.34
5.08
4.07
3.81
inches
c
D
w2
w3
4.58
25.23 6.48 12.76
18.42
0.51
3.98
23.95 6.07 12.06
1.02
0.26
0.291 0.220 0.210 0.160 0.007 0.505 0.505
0.100 0.870 0.730 0.130 0.180
0.993 0.255 0.502
0.725
0.02
0.255
0.249 0.210 0.200 0.150 0.003 0.496 0.495
0.090 0.830 0.720 0.117 0.157
0.943 0.239 0.475
0.04
0.01
OUTLINE
VERSION
e
D1
0.18 12.86 12.83
6.48
0.07 12.59 12.57
F
H
JEDEC
EIAJ
SOT119A
March 1986
p
2.54 22.10 18.55 3.31
2.28 21.08 18.28 2.97
REFERENCES
IEC
H1
Q
q
U1
U2
U3
EUROPEAN
PROJECTION
w1
ISSUE DATE
97-06-28
9
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1986
10