PHILIPS 1PS70SB86

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
Product data sheet
2001 Jan 18
NXP Semiconductors
Product data sheet
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
FEATURES
PINNING
• Low forward voltage
PIN
• Very small SMD plastic package
• Low diode capacitance.
APPLICATIONS
• UHF mixers
SYMBOL
3
1PS70SB82
1
1
a
2
n.c.
3
k
MLC357
Fig.2
1PS70SB84
• Sampling circuits
• Modulators
• Phase detectors.
2
n.c.
1
a1
2
k2
3
k1 and a2
1PS70SB82 single
diode configuration
(symbol).
3
1PS70SB85
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodes and double diodes with
different pinning are available. ESD
sensitive device, observe handling
precautions.
1
1
a1
2
a2
3
k1 and k2
MLC358
Fig.3
1PS70SB86
1
k1
2
k2
3
a1 and a2
1PS70SB84 diode
configuration (symbol).
3
MARKING
TYPE NUMBER
2
1
MARKING
CODE
1PS70SB82
88
1PS70SB84
87
1PS70SB85
85
1PS70SB86
86
2
MLC359
Fig.4
3
handbook, 2 columns
1
1PS70SB85 diode
configuration (symbol).
2
Top view
3
MBC870
1
2
MLC360
Fig.1
2001 Jan 18
Simplified outline
(SOT323; SC-70) and
pin configuration.
2
Fig.5
1PS70SB86 diode
configuration (symbol).
NXP Semiconductors
Product data sheet
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
15
V
IF
continuous forward current
−
30
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 1 mA
−
340
mV
IF = 30 mA
−
700
mV
rD
differential diode forward resistance
f = 1 MHz; IF = 5 mA; see Fig.9
12
−
Ω
IR
continuous reverse current
VR = 1 V; note 1; see Fig.7
−
0.2
μA
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.8
1
−
pF
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
2001 Jan 18
3
NXP Semiconductors
Product data sheet
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
MGT835
103
handbook, halfpage
MGT836
103
handbook, halfpage
IR
(μA)
IF
102
(mA)
(1)
(2) (3)
102
(1)
10
(2)
1
10
10−1
(2)
(3)
(3)
(1)
10−2
1
0
0.4
0.8
1.2
VF (V)
1.6
0
5
(1) Tamb = 125 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6
Fig.7
Forward current as a function of forward
voltage; typical values.
MGT837
1
10
Cd
(pF)
15
Reverse current as a function of reverse
voltage; typical values.
MGT838
103
handbook, halfpage
handbook, halfpage
VR (V)
rD
(Ω)
0.8
102
0.6
10
0.4
0
2
4
6
8
VR (V)
1
10−1
10
f = 1 MHz; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.8
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
2001 Jan 18
4
1
10
IF (mA)
102
Differential diode forward resistance as a
function of forward current; typical values.
NXP Semiconductors
Product data sheet
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Jan 18
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Jan 18
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2001 Jan 18
Document order number: 9397 750 07669