FJAFS1510A ESBC™ Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes (ESBC™) • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power switch designed to provide optimal performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1550 volts and up to 6amps, while providing exceptionally low on-resistance and very low switching losses. • Motor Drivers and Ignition Drivers ESBC Features (FDC655 MOSFET) • • • • • • VCS(ON) IC Equiv. RCS(ON) 0.426 V 6A 0.071 Ω(1) The ESBC™ switch is designed to be driven using offthe-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surfacemount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. Low Equivalent On Resistance Very Fast Switch: 150 kHz Avalanche Rated Low Driving Capacitance, No Miller Capacitance Low Switching Losses Reliable HV switch: No False Triggering due to High dv/dt Transients The FJAFS1510A provides exceptional reliability and a large operating range due to its square Reverse-BiasSafe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-3PF package. C C 2 FJAFS1510A B 1 B FDC655 G E TO-3PF 3 1 1.Base 2.Collector 3.Emitter S Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2) Ordering Information Part Number Marking Package Packing Method FJAFS1510ATU J1510A TO-3PF TUBE Remarks Notes: 1. Figure of Merit. 2. Other Fairchild MOSFETs can be used in this ESBC application. © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 1 FJAFS1510A — ESBC™ Rated NPN Power Transistor November 2012 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (TC = 25°C) Operating and Junction Temperature Range Storage Temperature Range Value Unit 1550 750 6 6 60 -55 to +125 -55 to +150 V V V A W °C °C Notes: 3. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol RθjC Parameter Thermal Resistance, Junction to Case Max. Unit 2.08 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Cob Test Conditions VCB = 1400 V, RBE = 0 VCB = 800 V, IE = 0 VEB = 4 V, IC = 0 IE = 500 μA, IC = 0 VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 3 A IC = 6 A, IB = 1.5 A, TA = 125°C VCB = 200 V, IE = 0, f = 1 MHz © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 Min. Typ. 6 15 7 Max. Unit 100 10 100 μA μA μA V 0.5 V 27 pF www.fairchildsemi.com 2 FJAFS1510A — ESBC™ Rated NPN Power Transistor Absolute Maximum Ratings(3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter fT Current Gain Bandwidth Product Inductive Current Fall Time Itf Inductive Storage Time ts Inductive Voltage Fall Time Vtf Vtr Inductive Voltage Rise Time Inductive Crossover Time tc Inductive Current Fall Time Itf Inductive Storage Time ts Inductive Voltage Fall Time Vtf Inductive Voltage Rise Time Vtr tc Inductive Crossover Time VCSW Maximum Collector Source Voltage at Turn-off without Snubber IGS(OS) Gate-Source Leakage Current VCS(ON) Collector-Source On Voltage VGS(th) Ciss QGS(tot) rDS(ON) Gate Threshold Voltage Test Conditions Min. Typ. Max. Unit IC = 0.1 A, VCE = 10 V 15.4 MHz VGS = 10 V, RG = 47 Ω, VClamp = 500 V, IC=1 A, IB= 0.1 A, hFE = 10, LC = 1 mH, SRF = 350 kHz 115 670 160 95 130 12.5 1100 68 110 150 ns ns ns ns ns ns ns ns ns ns V 1.0 nA VGS = 10 V, IC = 6 A, IB = 2 A, hFE = 3 0.426 V VGS = 10 V, RG = 47 Ω, VClamp = 500 V, IC = 5 A, IB = 1 A, hFE = 5, LC = 1 mH, SRF = 350 kHz hFE = 5, IC = 6 A 1550 VGS = ±20 V VGS = 10 V, IC = 4 A, IB = 1.3 A, hFE = 3 0.213 V VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3 0.162 V VGS = 10 V, IC = 1 A, IB = 0.2 A, hFE = 5 0.141 V VBS = VGS, IB = 250 μA 1.9 V VCS = 25 V, f = 1 MHz 470 pF Input Capacitance (VGS=VCB=0) Gate-Source Charge VCB=0 VGS = 10 V, IC = 6 A, VCS = 25 V VGS = 10 V, ID = 6.3 A Static Drain to Source On Resistance VGS = 10 V, ID = 6.3 A, TA = 125°C VGS = 4.5 V, ID = 5.5 A 9 nC 21 mΩ 30 mΩ 26 mΩ Notes: 4. Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used. © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 3 FJAFS1510A — ESBC™ Rated NPN Power Transistor ESBC Configured Electrical Characteristics(4) 100 10 IB=2.0A V CE = 5V 0 T A = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 8 6 IB=0.6A IB=0.4A 4 IB=0.2A 2 0 T A = - 25 C 10 1 0.1 0 0 2 4 6 8 10 12 14 1 Figure 4. Static Characteristic 100 IC = 3 IB VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 100 Figure 5. DC current Gain 10 1 o TA = 125 C o TA = 25 C o TA = - 25 C 0.1 0.01 0.1 1 IC = 5 IB 10 o TA = 125 C o TA = 25 C 1 o TA = -25 C 0.1 0.01 0.1 10 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 6. Collector-Emitter Saturation Voltage hFE=3 Figure 7. Collector-Emitter Saturation Voltage hFE=5 100 100 IC = 20 IB IC = 10 IB VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC [A], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE o TA = 125 C 10 o TA = 25 C o TA = -25 C 1 0.1 0.1 1 10 o TA = 125 C o TA = 25 C o TA = -25 C 1 0.1 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 8. Collector-Emitter Saturation Voltage hFE=10 Figure 9. Collector-Emitter Saturation Voltage hFE=20 © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 0 T A = 25 C www.fairchildsemi.com 4 FJAFS1510A — ESBC™ Rated NPN Power Transistor Typical Performance Characteristics FJAFS1510A — ESBC™ Rated NPN Power Transistor Typical Performance Characteristics (Continued) 1000 14 V CE = 5V IC [A], COLLECTOR CURRENT 12 Cob [pF], Capacitance 10 8 6 4 0 0 T A = 125 C 25 C 100 Cob (Emitter Open) 0 - 25 C 2 Cob (Emitter Grounded) 0 0.0 0.2 0.4 0.6 0.8 1.0 10 1.2 1 10 100 1000 VCB [V], Collector-Base Voltage V BE [V], BASE-EMITTER VOLTAGE Figure 10. Base-Emitter On Voltage Figure 11. Capacitance 2.5 250 o o tA = 25 C L=1mH SRF=350KHz tA = 25 C L=1mH SRF=350KHz 225 200 2.0 hFE=5 common emitter 175 Time [us] Time [ns] 150 hFE=10 common emitter 125 hFE=5 commom emitter 100 1.5 hFE=10 commom emitter 1.0 hFE=5 ESBC 75 50 hFE=10 ESBC 25 hFE=10 ESBC hFE=5 ESBC 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.5 0.5 6.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 12. Inductive Load Collector Current Fall-time (tf) Figure 13. Inductive Load Collector Current Storage time (tstg) 360 o tA = 25 C L=1mH SRF=350KHz o tA = 25 C L=1mH SRF=350KHz 240 320 200 280 hFE=5 ESBC hFE=10 common emitter 200 160 Time [ns] Time [ns] 240 hFE=5 commom emitter hFE=10 ESBC 160 hFE=10 common emitter 120 80 hFE=5 commom emitter 120 40 80 hFE=10 ESBC hFE=5 ESBC 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 0.5 6.0 Figure 14. Inductive Load Collector Voltage Fall-time (tf) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 15. Inductive Load Collector Voltage Rise-time (tr) © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 1.0 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT www.fairchildsemi.com 5 320 7 o VDD = +/-50V tA = 25 C L=1mH SRF=350KHz IC [A], COLLECTOR CURRENT hFE=10 common emitter 240 Time [ns] RLOAD = 500KΩ 6 280 200 hFE=5 ESBC 160 120 hFE=5 commom emitter -3V RBSOA 5 -5V RBSOA 4 -7V RBSOA 3 2 1 80 hFE=10 ESBC 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 5.0 5.5 0 6.0 200 400 600 800 1000 1200 1400 1600 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 16. Inductive Load Collector Current/Voltage Crossover (tc) Figure 17. Reverse Bias Safe Operating Area 10 IC [mA], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT o TC = 25 C VDD = +/-50V, RLOAD = 500KΩ 9 HFE = 4 8 7 6 5 4 3 2 Single 80us Pulse 10 1 1 0.1 0 0 200 400 600 800 1000 1200 1400 0 1600 500 1000 1500 2000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 18. ESBC RBSOA Figure 19. Forward Bias Safe Operating Area 80 PD [W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 C o T [ C], CASE TEMPERATURE Figure 20. Power Derating © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 6 FJAFS1510A — ESBC™ Rated NPN Power Transistor Typical Performance Characteristics (Continued) FJAFS1510A — ESBC™ Rated NPN Power Transistor Test Circuits Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating } } sT sT } pj A pi pj A A k|{ k|{ R\G} Figure 22. Energy Rating Test Circuit Figure 24. FBSOA Figure 23. Ft Measurement © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 7 FJAFS1510A — ESBC™ Rated NPN Power Transistor Test Circuits (Continued) Figure 25. Simplified Saturated Switch Driver Circuit Functional Test Waveforms Figure 26. Crossover Time Measurement 90% Vce 90% Ic 10% Vce 10% Ic Figure 27. Saturated Switching Waveform © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 8 Figure 29. Storage Time - ESBC FET Gate (off) to IC Fall-time Figure 28. Storage Time - Common Emitter Base turn off (Ib2) to IC Fall-time © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 9 FJAFS1510A — ESBC™ Rated NPN Power Transistor Functional Test Waveforms (Continued) - 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant ` X tiyYWX\Wj{{| ZW~ 1YWWTXWWW}Gkj xGyGXYWro¡ Y Y |m[WW^ Y^Wr Z X Z Y[}gXUY\h X XWWWm Z\} Y XWWWm Z\} ^ \ [ w]rl[[Wh twX]W_i[^Xh XYWm [\W} YY} YL Y^Wr mqhmzX\XWh{| Xu[X[_ Y^Wr } Y^Wr Q ] XYWm [\W} _ mkj]\\ v|{ \ o} ttzkZW^W jz Y^Wr oXXhnX}t kl{ X mi Y Z XYTX[} XWm [ XY}¡ [} XYWm [\W} Xu[X[_~z Y^Wr XWWm Y\} XUWhG QGtGGG Figure 30. Very Wide Input Voltage Range Supply Driving ESBC Switches Fairchild Proprietary Figure 31. VCC Derived Figure 32. VBIAS Supply Derived © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 Figure 33. Proportional Drive www.fairchildsemi.com 10 FJAFS1510A — ESBC™ Rated NPN Power Transistor Very Wide Input Voltage Range Supply FJAFS1510A — ESBC™ Rated NPN Power Transistor Physical Dimensions TO-3PF 15.70 15.30 9.90 4.60 4.40 3.20 2.80 3.80 3.40 7.75 10.20 9.80 16.70 16.30 16.70 16.30 14.70 14.30 1.93 15.00 14.60 23.20 22.80 26.70 26.30 4.20 3.80 1 2 3 2.20 1.80 2.70 2.30 2.20 (3X) 1.80 3.50 3.10 0.95 (3X) 0.65 5.75 5.15 1.10 0.80 5.75 5.15 NOTES: 5.70 5.30 2.20 1.80 3.50 3.10 A. THIS PACKAGE CONFORMS TO SC94 JEITA PACKAGING STANDARD. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. PIN 2 CONNECTS TO DAP. E. DRAWING FILE NAME: TO3PFA03REV1 Figure 34. TO-3PF, 3 Leads, Molded, Full Pack Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/products/discrete/pdf/to3pf_tr.pdf. © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A2 www.fairchildsemi.com 11 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I62 © Fairchild Semiconductor Corporation www.fairchildsemi.com