APT80GP60JDQ3 600V TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 ® E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 39A • Low Gate Charge • 50 kHz operation @ 400V, 59A • Ultrafast Tail Current shutoff • SSOA Rated C G ISOTOP ® S OT 22 7 "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT80GP60JDQ3 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 151 I C2 Continuous Collector Current @ TC = 110°C 68 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 330 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 330A @ 600V Total Power Dissipation Watts 462 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) 600 VGE(TH) Gate Threshold Voltage 3.0 VCE(ON) I CES I GES TYP MAX 4.5 6.0 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) 2.1 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 6-2005 MIN Rev A Characteristic / Test Conditions 050-7442 Symbol DYNAMIC CHARACTERISTICS Symbol APT80GP60JDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 40 Gate Charge 7.5 VGE = 15V 280 TJ = 150°C, R G = 5Ω, VGE = 795 1200 Inductive Switching (125°C) 29 VCC = 400V 40 VGE = 15V 150 RG = 5Ω 85 795 I C = 80A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1535 6 Current Fall Time ns 80 TJ = +25°C Turn-off Delay Time nC 115 RG = 5Ω Current Rise Time V A 40 I C = 80A Turn-on Delay Time pF 330 29 5 UNIT 85 VCC = 400V 4 MAX 65 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 735 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 9840 I C = 80A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 2155 6 1690 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .27 RθJC Junction to Case (DIODE) .60 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7442 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 120 120 100 100 IC, COLLECTOR CURRENT (A) TJ = 25°C 40 TJ = -55°C 20 0 TJ = -55°C TJ = 25°C 100 TJ = 125°C 0 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 3.5 IC = 160A 3.0 2.5 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 80A 2.0 IC = 40A 1.5 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 6 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 50 100 150 200 250 GATE CHARGE (nC) 300 FIGURE 4, Gate Charge 3.0 IC = 160A 2.5 IC = 80A 2.0 IC = 40A 1.5 1.0 0.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 200 1.20 1.15 I = 80A C T = 25°C 14 0 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 300 200 FIGURE 2, Output Characteristics (TJ = 125°C) 16 IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) 400 TJ = 125°C 20 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST<0.5 % DUTY CYCLE TJ = 25°C 40 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 500 TJ = -55°C 60 180 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 6-2005 TJ = 125°C 60 80 Rev A 80 APT80GP60JDQ3 050-7442 IC, COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES 35 VGE = 15V 30 25 20 15 10 VCE = 400V TJ = 25°C, TJ =125°C RG = 5Ω L = 100 µH 5 0 40 30 20 TJ = 25 or 125°C,VGE = 15V VCE = 400V 20 R = 5Ω G RG = 5Ω, L = 100µH, VCE = 400V TJ = 125°C, VGE = 15V 80 60 TJ = 25°C, VGE = 15V 40 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 = 400V V CE = +15V V GE R = 5Ω G 3000 L = 100 µH 20 TJ = 125°C,VGE =15V 2500 2000 1500 1000 TJ = 25°C,VGE =15V 500 EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 40 100 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0 = 400V V CE = +15V V GE R = 5Ω G 3000 TJ = 125°C, VGE = 15V 2000 1000 TJ = 25°C, VGE = 15V 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000 4000 = 400V V CE = +15V V GE T = 125°C Eon2,120A J 5000 Eoff,120A 4000 3000 Eon2,80A Eoff,80A 2000 Eon2,40A 1000 0 Eoff,40A 5 10 15 20 25 30 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 60 50 3500 VGE =15V,TJ=25°C 80 120 0 6-2005 100 60 4000 VGE =15V,TJ=125°C 120 140 RG = 5Ω, L = 100µH, VCE = 400V 10 Rev A 140 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current tf, FALL TIME (ns) tr, RISE TIME (ns) 70 160 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 050-7442 APT80GP60JDQ3 180 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 40 = 400V V CE = +15V V GE R = 5Ω G 3000 Eon2,120A Eoff,120A 2000 Eon2,80A Eoff,80A 1000 Eon2,40A Eoff,40A 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 20,000 IC, COLLECTOR CURRENT (A) Cies 10,000 P C, CAPACITANCE ( F) 5000 1000 Coes 50 10 5 APT80GP60JDQ3 300 250 200 150 100 50 Cres 1 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 0.3 0.05 0.1 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 t1 t2 SINGLE PULSE 0.05 0 10-5 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.0584 0.185 0.0354 0.463 Case temperature(°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 50 F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 5 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 5Ω G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 1 10 20 30 40 50 60 70 80 90 100 110 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2005 Power (watts) 0.00119 Rev A 0.0260 100 050-7442 RC MODEL Junction temp (°C) FMAX, OPERATING FREQUENCY (kHz) 190 APT80GP60JDQ3 Gate Voltage 10% APT60DQ60 T J = 125 °C td(on) 90% IC V CC Collector Current V CE tr 5% A 5% 10% Switching Energy D.U.T. Collector Voltage Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage td(off) TJ = 125 °C A Collector Voltage 90% V CE 100uH V CLAMP tf 10% Switching Energy Collector Current 0 Rev A 6-2005 Figure 23, Turn-off Switching Waveforms and Definitions 050-7442 IC B A DRIVER* Figure 24, EON1 Test Circuit D.U.T. TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM All Ratings: TC = 25°C unless otherwise specified. APT80GP60JDQ3 Characteristic / Test Conditions Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 85 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 600 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions Forward Voltage MIN TYP IF = 80A 1.82 IF = 160A 2.21 IF = 80A, TJ = 125°C 1.56 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX- UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 160 trr Reverse Recovery Time - 70 Qrr Reverse Recovery Charge - 100 - 4 - 140 ns - 690 nC - 9 - 80 ns - 1540 nC - 31 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 60A, diF/dt = -200A/µs IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps 0.60 0.9 0.50 0.7 0.40 0.5 0.30 0.20 0.3 0.10 0.1 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) Power (watts) 6-2005 10-5 SINGLE PULSE 0.159 0.00560 0.255 0.0849 Rev A 0 0.186 0.489 050-7442 ZθJC, THERMAL IMPEDANCE (°C/W) 0.70 Case temperature (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 200 140 120 TJ = 175°C 100 80 TJ = 125°C 60 40 TJ = -55°C 20 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125°C J V = 400V R 2000 120A 60A 1500 1000 30A 500 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 60 40 60 T = 125°C J V = 400V R 50 120A 40 30 60A 20 30A 10 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 29. Reverse Recovery Current vs. Current Rate of Change 100 Duty cycle = 0.5 T = 175°C J 80 0.8 IRRM trr 0.6 60 40 0.4 Qrr 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 30. Dynamic Parameters vs. Junction Temperature 0 600 CJ, JUNCTION CAPACITANCE (pF) 30A 80 trr 1.0 0.0 6-2005 60A 100 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 27. Reverse Recovery Time vs. Current Rate of Change Qrr 0.2 Rev A 120 R 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 T = 125°C J V = 400V 120A 140 20 TJ = 25°C 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 050-7442 trr, REVERSE RECOVERY TIME (ns) 160 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 180 0 APT80GP60JDQ3 160 500 400 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 20 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 31. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 34, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 6-2005 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) Rev A r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7442 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)