0.9V Drive Nch MOSFET
RYE002N05
z Structure
Silicon N-channel MOSFET
z Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
zFeatures
1) High speed switing.
2) Small package(EMT3).
3) Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
z Application
Switching
z Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RYE002N05
z Inner circuit
(3)
Taping
TCL
3000
{
z Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Limits
Unit
50
±8
V
V
±200
±800
125
mA
mA
mA
800
150
mA
mW
Tch
Tstg
150
−55 to +150
°C
°C
Symbol
Limits
Unit
833
°C / W
Continuous
VDSS
VGSS
ID
Pulsed
Continuous
Pulsed
IDP
IS
ISP
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
*1
(1) Source
(2) Gate
(3) Drain
(1)
(2)
(2)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw≤10µs, Duty cycle≤1%
*2 Each terminal mounted on a recommended land.
z Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
* Each terminal mounted on a recommended land.
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1/5
2011.05 - Rev.B
RYE002N05
Data Sheet
z Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Min.
Conditions
Typ.
Max.
Unit
-
-
±10
µA
VGS=±8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
µA
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250Ω
RG=10Ω
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
*
RDS (on)
Rise time
Turn-off delay time
Fall time
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
Ω
S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
zBody diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
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2/5
2011.05 - Rev.B
Data Sheet
RYE002N05
z Electrical characteristic curves (Ta = 25°C)
0.2
1
0.1
DRAIN CURRENT : ID[A]
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
Ta=25°C
Pulsed
VGS= 0.8V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
0.1
VGS= 0.8V
0.4
0.6
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25°C
Pulsed
1000
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
100
0.001
0.01
0.1
1
10000
VGS= 4.5V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.001
DRAIN-CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
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0.1
VGS= 2.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1000
100
1
0.001
10000
VGS= 1.2V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 1.5V
Pulsed
0.001
0.01
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-SOURCE VOLTAGE : VDS[V]
10000
10000
0.01
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.2
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
0.1
0.001
0
0
VDS= 10V
Pulsed
VGS= 0.7V
VGS= 0.7V
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN CURRENT : ID[A]
VGS= 4.5V
DRAIN CURRENT : ID[A]
0.2
10000
VGS= 0.9V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1000
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2011.05 - Rev.B
Data Sheet
1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1
0
0.5
1
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
td(off)
tf
100
Ta=25°C
VDD=25V
VGS=4.5V
RG=10Ω
Pulsed
10
td(on)
tr
1
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
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©2011 ROHM Co., Ltd. All rights reserved.
5000
Ta=25°C
Pulsed
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
1.5
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
VGS=0V
Pulsed
0.01
0.1
1000
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
VDS= 10V
Pulsed
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25°C
f=1MHz
VGS=0V
4
3
2
Ta=25°C
VDD=25V
ID= 0.2A
RG=10Ω
Pulsed
1
0
0
0.5
1
1.5
CAPACITANCE : C [pF]
10
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RYE002N05
100
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
4/5
2011.05 - Rev.B
RYE002N05
Data Sheet
z Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching time measurement circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
z Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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5/5
2011.05 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1120A