1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) EMT6 SOT-563 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable equipment. Each lead has same dimensions Abbreviated symbol : K07 zInner circuit (6) (5) zPackaging specifications Package Type (4) ∗1 Taping Code T2R Basic ordering unit (pieces) 8000 ∗2 ∗2 EM6K7 ∗1 (1) ∗1 Esd Protection diode ∗2 Body Diode zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Symbol Limits Unit Drain−source voltage VDSS 20 V Gate−source voltage VGSS ±8 V Continuous ID ±200 mA Pulsed IDP ∗1 ±400 mA ∗2 150 mW / TOTAL Parameter Drain current PD Total power dissipation 120 mW / ELEMENT Channel temperature Tch 150 °C Range of storage temperature Tstg −55 to +150 °C (2) (3) (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits 833 1042 Unit °C/W / TOTAL °C/W / ELEMENT ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.07 - Rev.A EM6K7 Data Sheet zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Symbol Min. Typ. Max. Unit IGSS − − ±10 µA Drain-source breakdown voltage V(BR)DSS 20 − − V ID=1mA, VGS=0V Zero gate voltage drain current IDSS − − 1 µA VDS=20V, VGS=0V VGS(th) 0.3 − 1.0 V VDS=10V, ID=1mA ID=200mA, VGS=2.5V Parameter Gate-source leakage Gate threshold voltage Static drain-source on-state resistance RDS(on)∗ Forward transfer admittance |Yfs| ∗ Conditions VGS=±8V, VDS=0V − 0.8 1.2 Ω − 1.0 1.4 Ω ID=200mA, VGS=1.8V − 1.2 2.4 Ω ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V − 1.6 4.8 Ω 200 − − mS VDS=10V, ID=200mA Input capacitance Ciss − 25 − pF VDS=10V Output capacitance Coss − 10 − pF VGS=0V Reverse transfer capacitance Crss − 10 − pF f=1MHz Turn-on delay time td(on) ∗ − 5 − ns VDD tr ∗ − 10 − ns VGS=4.0V td(off) ∗ tf ∗ − 15 − ns RL 67Ω − 10 − ns RG=10Ω Rise time Turn-off delay time Fall time 10V, ID=150mA ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 100mA, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.07 - Rev.A EM6K7 Data Sheet zElectrical characteristics curves VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 1.2V 0.1 VGS= 2.5V VGS= 1.8V 0.4 VGS= 1.3V 0.3 VGS= 1.2V 0.2 VGS= 1.5V Ta=25°C Pulsed 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V 1000 0.01 0.1 100 0.001 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.3 Typical transfer characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 VGS= 2.5V Pulsed 100 0.001 1 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.01 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/4 1 DRAIN-CURRENT : ID [A] 10000 0.01 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.5V Pulsed 100 0.001 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 DRAIN-CURRENT : ID [A] 10000 0.1 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 1.8V Pulsed 0.01 8 1000 DRAIN-CURRENT : ID [A] 100 0.001 6 10000 VGS= 4.0V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 0.0001 Fig.2 Typical Output Characteristics(Ⅱ) 10000 100 0.001 Ta=125°C 75°C 25°C −25°C 0.001 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) Ta= 25°C Pulsed 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 0.01 0.00001 0.0 0 0 0.1 0.1 0 10000 DRAIN CURRENT : ID (A) 0.4 VGS= 4.5V VGS= 2.5V VGS= 1.8V 1 VDS=10V Pulsed 0.5 Ta=25°C Pulsed DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 0.5 1 VGS= 1.2V Pulsed 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 2009.07 - Rev.A EM6K7 Data Sheet 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 1 2.5 VGS=0V Pulsed 0.5 1 Ta=25°C Pulsed ID = 0.2A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] SOURCE CURRENT : IS (A) VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 2 1.5 1 0.5 ID = 0.02A 0 1.5 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-CURRENT : ID [A] GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.10 Forward Transfer Admittance vs. Drain Current 100 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed CAPACITANCE : C [pF] SWITHING TIME : t (ns) 1000 100 td(off) tf td(on) 10 Ciss 10 0.1 1 Crss Coss tr 1 0.01 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 Ta=25°C f=1MHz VGS=0V 0.01 DRAIN CURRENT : ID (A) 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit Pulse width VGS ID VDS D.U.T. RG VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.1-1 Switching time measurement circuit tr tf td (off) toff Fig.1-2 Switching waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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