TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
APT50GP60B2DF2
600V
POWER MOS 7 IGBT
®
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• 200 kHz operation @ 400V, 28A
• Low Gate Charge
• 100 kHz operation @ 400V, 44A
• Ultrafast Tail Current shutoff
• SSOA rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50GP60B2DF2
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±20
Gate-Emitter Voltage Transient
±30
VGEM
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
7
UNIT
Volts
100
@ TC = 25°C
72
Amps
190
@ TC = 150°C
190A@600V
Safe Operating Area @ TJ = 150°C
625
Total Power Dissipation
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.2
2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
2.1
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
2
750
2
Gate-Emitter Leakage Current (VGE = ±20V)
Volts
µA
3000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
4-2004
MIN
Rev C
Characteristic / Test Conditions
050-7436
Symbol
APT50GP60B2DF2
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
5700
VGE = 0V, VCE = 25V
465
Reverse Transfer Capacitance
f = 1 MHz
30
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
7.5
165
VCE = 300V
40
I C = 50A
50
Input Capacitance
Coes
Output Capacitance
Cres
VGEP
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
TYP
Capacitance
Cies
Qg
MIN
Safe Operating Area
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
nC
190
A
15V, L = 100µH,VCE = 600V
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-on Switching Energy
Turn-on Delay Time
837
6
Inductive Switching (125°C)
VCC = 400V
19
VGE = 15V
116
Turn-off Delay Time
36
I C = 50A
Current Fall Time
Eon2
Turn-on Switching Energy (Diode)
5
ns
86
R G = 5Ω
4
Turn-on Switching Energy
µJ
637
Current Rise Time
Turn-off Switching Energy
465
TJ = +25°C
5
ns
60
R G = 5Ω
4
Eon1
Eoff
83
36
I C = 50A
Turn-on Switching Energy (Diode)
td(on)
tf
VGE = 15V
Current Fall Time
Turn-off Switching Energy
td(off)
19
Turn-off Delay Time
Eoff
tr
Inductive Switching (25°C)
VCC = 400V
465
TJ = +125°C
1261
6
µJ
1058
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RΘJC
Junction to Case (IGBT)
.20
RΘJC
Junction to Case (DIODE)
.67
WT
Package Weight
6.10
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
050-7436
Rev C
4-2004
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
30
TC=25°C
20
TC=-55°C
10 TC=125°C
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ = 125°C
20
2
3
4 5
6 7
8
9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3
IC =100A
2.5
IC = 50A
2
IC = 25A
1.5
1
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
6
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
TC=-55°C
TC=125°C
10
IC = 50A
TJ = 25°C
14
VCE=120V
12
VCE=300V
10
VCE=480V
8
6
4
2
0
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
TC=25°C
20
FIGURE 2, Output Characteristics (VGE = 10V)
16
0
20
40
60 80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
IC =100A
2.5
IC = 50A
2
IC = 25A
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
200
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
40
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = -55°C
60
30
0
0.5
1
1.5
2
2.5
3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V)
100
80
40
0
0
0.5
1
1.5
2
2.5
3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
180
160
140
120
100
80
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
4-2004
40
60
APT50GP60B2DF2
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
Rev C
50
IC, COLLECTOR CURRENT (A)
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
60
IC, COLLECTOR CURRENT (A)
70
050-7436
70
TYPICAL PERFORMANCE CURVES
35
VGE= 10V
30
25
VGE= 15V
20
15
10
VCE = 400V
TJ = 25°C or 125°C
RG = 5Ω
L = 100 µH
05
VGE =10V,TJ=25°C
40
20
VCE = 400V
RG = 5Ω
L = 100 µH
TJ = 125°C, VGE = 10V or 15V
100
70
tf, FALL TIME (ns)
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
120
TJ = 25 or 125°C,VGE = 10V
60
50
40
30
3500
60
TJ = 25°C, VGE = 10V or 15V
40
20
RG =5Ω, L = 100µH, VCE = 400V
0
3500
VCE = 400V
L = 100 µH
RG = 5 Ω
TJ =125°C, VGE=15V
3000
TJ =125°C,VGE=10V
2500
2000
1500
1000
TJ = 25°C, VGE=15V
500
TJ = 25°C, VGE=10V
RG =5Ω, L = 100µH, VCE = 400V
20 30 40 50 60 70 80
90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
EOFF, TURN OFF ENERGY LOSS (µJ)
4000
80
TJ = 25 or 125°C,VGE = 15V
0
20 30
40 50 60
70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
VCE = 400V
L = 100 µH
RG = 5 Ω
TJ = 125°C, VGE = 10V or 15V
2500
2000
1500
1000
500
TJ = 25°C, VGE = 10V or 15V
0
10 20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
20 30 40 50 60
70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
4000
VCE = 400V
VGE = +15V
TJ = 125°C
5000
Eon2 100A
4000
Eoff 100A
3000
2000
Eon2 50A
1000
0
Eon2 25A
Eoff 50A
Eoff 25A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
SWITCHING ENERGY LOSSES (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
60
100
10
SWITCHING ENERGY LOSSES (µJ)
80
20 30 40 50 60 70 80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
20
4-2004
VGE =10V,TJ=125°C
100
0
80
Rev C
VGE =15V,TJ=125°C
120
0
20 30
40 50
60 70
80 90 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
90
050-7436
APT50GP60B2DF2
140
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
40
3500
3000
VCE = 400V
VGE = +15V
RG = 5 Ω
Eon2 100A
2500
Eoff 100A
2000
1500
1000
Eon2 50A
500
Eon2 25A
0
-50
Eoff 50A
Eoff 25A
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000
P
C, CAPACITANCE ( F)
IC, COLLECTOR CURRENT (A)
Cies
5,000
1,000
500
Coes
100
50
APT50GP60B2DF2
200
Cres
180
160
140
120
100
180
160
140
120
0
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.20
0.16
0.7
0.12
0.5
Note:
0.08
0.3
t2
0.1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10
10
10
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
-4
-3
-2
RC MODEL
210
0.0090806
0.0046253
0.0192963
0.0021766
0.0658343
0.0142175
0.1055619
0.345873
Power
(Watts)
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
FMAX, OPERATING FREQUENCY (kHz)
Junction
temp. ( ”C)
1.0
100
50
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
10
10 20
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Fmax = min(f max1 , f max 2 )
f max1 =
0.05
t d (on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
TJ − TC
R θJC
4-2004
10
-5
Rev C
0.05
0
t1
050-7436
0.04
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.9
APT50GP60B2DF2
TYPICAL PERFORMANCE CURVES
APT30DF60
Gate Voltage
10%
TJ = 125 C
td(on)
IC
V CC
V CE
Collector Current
tr
90%
A
D.U.T.
5%
10%
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
td(off)
VTEST
TJ = 125 C
*DRIVER SAME TYPE AS D.U.T.
A
tf
V CE
Collector Voltage
90%
100uH
IC
V CLAMP
B
0
Switching Energy
10%
Collector Current
A
DRIVER*
050-7436
Rev C
4-2004
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
D.U.T.
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Characteristic / Test Conditions
Symbol
IF(AV)
IF(RMS)
APT50GP60B2DF2
Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
49
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
IFSM
UNIT
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
Forward Voltage
VF
TYP
IF = 50A
2.6
IF = 100A
3.6
IF = 50A, TJ = 125°C
1.9
MAX
UNIT
Volts
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
21
trr
Reverse Recovery Time
-
62
Qrr
Reverse Recovery Charge
-
65
-
3
-
113
ns
-
411
nC
-
7
-
49
ns
-
704
nC
-
22
Amps
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 30A, diF/dt = -200A/µs
IF = 30A, diF/dt = -1000A/µs
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
ns
nC
-
-
Amps
Amps
0.9
0.60
0.50
0.7
0.40
0.5
Note:
0.30
PDM
0.3
0.20
t1
t2
0.10
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
0.378 °C/W
0.00232 J/°C
0.291 °C/W
0.110 J/°C
Power
(watts)
Case temperature (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
4-2004
10-5
Duty Factor D = t1/t2
Rev C
0
SINGLE PULSE
0.1
0.05
050-7436
Z JC, THERMAL IMPEDANCE (°C/W)
θ
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
APT50GP60B2DF2
100
120
TJ = 150°C
60
50
TJ = 25°C
40
TJ = 125°C
30
20
TJ = -55°C
10
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
60A
700
30A
600
500
15A
400
300
200
100
0
0
200
400
600
800
1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
60A
20
15
30A
10
15A
5
Duty cycle = 0.5
TJ = 150°C
50
40
trr
0.8
IRRM
0.6
Qrr
0.4
30
20
10
0
400
CJ, JUNCTION CAPACITANCE
(pF)
TJ = 125°C
VR = 400V
0
200
400
600
800
1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 29. Reverse Recovery Current vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.0
450
4-2004
20
trr
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 30. Dynamic Parameters vs. Junction Temperature
Rev C
40
0
Qrr
0.2
050-7436
60
60
1.2
350
300
250
200
150
100
50
0
15A
0
200
400
600
800
1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time vs. Current Rate of Change
1.4
0.0
30A
80
25
TJ = 125°C
VR = 400V
800
100
0
0
900
Qrr, REVERSE RECOVERY CHARGE
(nC)
trr, REVERSE RECOVERY TIME
(ns)
70
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
80
0
TJ = 125°C
VR = 400V
60A
90
.3
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 32. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT50GP60B2DF2
Vr
diF /dt Adjust
+18V
APT6017LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 34, Diode Reverse Recovery Waveform and Definitions
®
T-MAX (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
Gate
Collector
(Cathode)
Emitter
(Anode)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
1.65 (.065)
2.13 (.084)
Rev C
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
050-7436
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)