Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP9N60E, PHB9N60E, PHW9N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA d VDSS = 600 V ID = 8.7 A g RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP9N60E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package. The PHB9N60E is supplied in the SOT404 surface mounting package. PINNING PIN SOT78 (TO220AB) DESCRIPTION 1 gate 2 drain1 3 source SOT404 SOT429 (TO247) tab tab 2 tab drain 1 23 1 1 3 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ IDM PD Tj, Tstg Pulsed drain current Total dissipation Operating junction and storage temperature range - 55 600 600 ± 30 8.7 5.5 35 156 150 V V V A A A W ˚C Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package. January 1998 1 Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS EAS Non-repetitive avalanche energy EAR IAS, IAR Repetitive avalanche energy2 Repetitive and non-repetitive avalanche current Unclamped inductive load, ID = 8.7 A; VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. MAX. UNIT - 678 mJ - 17 8.7 mJ A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT429 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT - - 0.8 K/W - 60 45 50 - K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)DSS VGS = 0 V; ID = 0.25 mA 600 - - V VDS = VGS; ID = 0.25 mA - 0.1 - %/K 2.0 4 - 0.7 3.0 5.5 2 80 10 0.85 4.0 100 1000 200 Ω V S µA µA nA Drain-source breakdown voltage ∆V(BR)DSS / Drain-source breakdown voltage temperature ∆Tj coefficient RDS(ON) Drain-source on resistance Gate threshold voltage VGS(TO) gfs Forward transconductance IDSS Drain-source leakage current TYP. MAX. UNIT IGSS VGS = 10 V; ID = 4.4 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 4.4 A VDS = 600 V; VGS = 0 V VDS = 480 V; VGS = 0 V; Tj = 125 ˚C Gate-source leakage current VGS = ±30 V; VDS = 0 V Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 8.7 A; VDD = 480 V; VGS = 10 V - 130 8 60 150 10 85 nC nC nC td(on) tr td(off) tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 300 V; RD = 33 Ω; RG = 5.6 Ω - 20 55 160 70 - ns ns ns ns Ld Ld Internal drain inductance Internal drain inductance - 3.5 4.5 - nH nH Ls Internal source inductance Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 and SOT429 packages only) Measured from source lead to source bond pad - 7.5 - nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 200 112 - pF pF pF 2 pulse width and repetition rate limited by Tj max. January 1998 2 Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IS Tmb = 25˚C - - 8.7 A Tmb = 25˚C - - 35 A VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage IS = 8.7 A; VGS = 0 V - - 1.2 V trr Qrr Reverse recovery time Reverse recovery charge IS = 8.7 A; VGS = 0 V; dI/dt = 100 A/µs - 740 9 - ns µC ISM January 1998 MIN. 3 TYP. MAX. UNIT Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". January 1998 4 Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.2. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.3. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". January 1998 5 Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.4. SOT429; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". January 1998 6 Rev 1.000 Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP9N60E, PHB9N60E, PHW9N60E DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 7 Rev 1.000