Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications. PINNING - SOT223 PIN PHT1N60R QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDS ID Ptot RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance 600 0.53 1.8 16.0 V A W Ω PIN CONFIGURATION DESCRIPTION 1 gate 2 drain 3 source 4 drain (tab) SYMBOL d 4 g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDS VDGR ±VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) IDM Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature IDR IDRM Ptot Tstg Tj CONDITIONS MIN. MAX. UNIT Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C - 600 600 30 0.53 0.4 2.12 V V V A A A Tsp = 25 ˚C - 0.53 A Tsp = 25 ˚C - 2.12 A Tsp = 25 ˚C -55 - 1.8 150 150 W ˚C ˚C MIN. MAX. UNIT - 20 8 3.6 mJ mJ mJ RGS = 20 kΩ AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS WDSR1 CONDITIONS Drain-source non-repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge Tj = 100˚C prior to surge Drain-source repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω ; Tj ≤ 150 ˚C energy 1. Pulse width and frequency limited by Tj(max) February 1998 1 Rev 1.000 Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R THERMAL RESISTANCES SYMBOL PARAMETER Rth j-sp Thermal resistance junction to solder point Thermal resistance junction to ambient Rth j-a CONDITIONS pcb mounted; minimum footprint pcb mounted; pad area as in fig:2 MIN. TYP. MAX. UNIT - - 15 K/W - 156 70 - K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current VGS = 0 V; ID = 0.25 mA 600 - - V VDS = VGS; ID = 0.25 mA VDS = 500 V; VGS = 0 V; Tj = 25 ˚C VDS = 400 V; VGS = 0 V; Tj = 125 ˚C VGS = ±35 V; VDS = 0 V VGS = 10 V; ID = 1 A 2.0 - 3.0 1 0.1 4 - 4.0 100 1.0 100 16.0 V µA mA nA Ω - 0.85 1.2 V MIN. TYP. MAX. UNIT 0.5 0.8 - S VGS(TO) IDSS IGSS RDS(ON) VSD Gate-source leakage current Drain-source on-state resistance Source-drain diode forward voltage IF = 2 A ;VGS = 0 V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 15 V; ID = 1 A Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 75 10 5 100 15 10 pF pF pF Qg(tot) Qgs Qgd Total gate charge Gate to source charge Gate to drain (Miller) charge VGS = 10 V; ID = 2 A; VDS = 400 V - 5 .5 3 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 2 A; VGS = 10 V; RGS = 50 Ω; RGEN = 50 Ω - 5 15 15 7 10 20 20 15 ns ns ns ns trr Source-drain diode Reverse recovery time Source-drain diode Reverse recovery charge IF = 2 A; -dIF/dt = 100 A/µs; - 150 - ns VGS = 0 V; VR = 100 V - 1.5 - µC Qrr February 1998 2 Rev 1.000 Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min 6.3 (3x) 1.5 min 4.6 Fig.1. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.2. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). February 1998 3 Rev 1.000 Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R MECHANICAL DATA Dimensions in mm 6.7 6.3 Net Mass: 0.11 g B 3.1 2.9 0.32 0.24 0.2 4 A A 0.10 0.02 16 max M 7.3 6.7 3.7 3.3 13 2 1 10 max 1.8 max 1.05 0.80 2.3 0.60 0.85 4.6 3 0.1 M B (4x) Fig.3. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". February 1998 4 Rev 1.000 Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 5 Rev 1.000