ROHM RSX301L-30

RSX301L-30
Diodes
Schottky barrier diode
RSX301L-30
z Land size figure (Unit : mm)
zDimensions (Unit : mm)
zApplications
General rectification
2.0
2.0
2.6±0.2
1.2±0.3
6
②
4.5±0.2
5
①
0.1±0.02
0.1
5.0±0.3
4.2
zFeatures
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
3) High reliability.
PMDS
2.0±0.2
1.5±0.2
zConstruction
Silicon epitaxial planar
zStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
z Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Limits
Symbol
VRM
30
VR
30
3
Io
70
IFSM
150
Tj
-40 to +150
Tstg
(*1)Tc=90℃max Mounted on epoxy board. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
VF
Min.
-
Typ.
-
Max.
0.42
Unit
V
I R1
-
-
90
µA
I R2
-
-
200
µA
Unit
V
V
A
A
℃
℃
Conditions
IF=3.0A
VR=15V
VR=30V
Rev.D
1/3
RSX301L-30
Diodes
zElectrical characteristic curves (Ta=25°C)
10
1000000
Ta=150℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
10000
Ta=75℃
1000
Ta=25℃
100
Ta=-25℃
10
100
200
300
400
500
0
600
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
30
Ta=25℃
VR=30V
n=30pcs
900
380
370
360
AVE:379.8mV
800
700
600
500
400
AVE:66.90uA
300
810
800
790
780
770
760
0
AVE:800.8pF
750
IR DISPERSION MAP
Ct DISPERSION MAP
30
300
1cyc
RESERVE RECOVERY TIME:trr(ns)
Ifsm
8.3ms
150
AVE:178.0A
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:11.8ns
5
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
200
0
250
1000
1cyc
150
100
50
1
Mounted on epoxy board
IM=100mA
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Ifs
t
150
100
50
0
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
3
IF=1A
Rth(j-a)
100
200
8.3ms 8.3ms
0
1ms
time
300us
Rth(j-c)
10
1
0.1
0.001
FORWARD POWER
DISSIPATION:Pf(W)
300
Ifsm
200
trr DISPERSION MAP
IFSM DISPERSION MAP
1
820
100
VF DISPERSION MAP
250
830
200
350
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
840
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
390
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
850
1000
Ta=25℃
IF=3A
n=30pcs
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
400
100
10
1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=150℃
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
100000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125℃
1
1000
Ta=125℃
D=1/2
2
DC
Sin(θ=180)
1
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
0
1
2
3
4
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.D
2/3
RSX301L-30
Diodes
7
D=1/2
2
Sin(θ=180)
1
0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
DC
Io
0A
0V
6
4
3
t
5
4
DC
3
Sin(θ=180)
6
VR
D=t/T
VR=15V
T Tj=150℃
2
D=1/2
1
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0A
0V
7
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
5
Io
t
5
VR
D=t/T
VR=15V
T Tj=150℃
4
3
2
1
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
125
150
30
No break at 30kV No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.D
3/3
Appendix
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or
exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility
whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or
devices (such as audio visual equipment, office-automation equipment, communication devices, electronic
appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
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Appendix1-Rev3.0