ROHM RB051M-2Y

Schottky Barrier Diode
RB051M-2Y
Dimensions(Unit : mm)
Applications
General rectification
Land size figure(Unit : mm)
0.85
1.2
3.05
Features
1)Small power mold type.（PMDU）
2)Ultra Low VF
3)High reliability
PMDU
Construction
Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
φ1.55±0.05
4.0±0.1
1.81±0.1
Absolute maximum ratings (Ta=25C)
Parameter
1.5MAX
Limits
Symbol
Reverse voltage (repetitive)
VRM
Reverse voltage (DC)
VR
Average rectified forward current(*1)
Io
Forward current surge peak （60Hz・1cyc）
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on alumina board. Tc=95C　Max.
Electrical characteristics(Ta=25C)
Parameter
8.0±0.2
φ1.0±0.1
3.71±0.1
0.25±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Unit
V
V
A
A
20
20
3
30
125
-40 to +125
C
C
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.46
Unit
V
Reverse current
IR
-
-
0.9
mA
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1/3
Conditions
IF=3A
VR=20V
2011.05 - Rev.C
RB051M-2Y
Data Sheet
Electrical characteristic curves
Ta=150C
10
Ta=125C
1000
10000000
Ta=125C
f=1MHz
Ta=75C
Ta=25C
Ta=-25C
0.1
0.01
100000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=150C
1
REVERSE CURRENT:I R(uA)
FORWARD CURRENT:I F(A)
1000000
Ta=75C
10000
1000
Ta=25C
100
Ta=-25C
10
100
10
1
0.001
1
0.1
0
100
200
300
400
500
0
5
10
15
REVERSE VOLTAGE:V R(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:V F(mV)
VF-IF CHARACTERISTICS
4000
3500
390
3000
2500
380
2000
1500
370
AVE:382.2mV
AVE:270.0uA
1000
460
450
440
AVE:454.2pF
430
420
410
400
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1cyc
8.3ms
100
AVE:48.0A
50
100
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
90
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
REVERSE RECOVERY TIME:trr(ns)
30
150
470
0
200
15
10
5
0
20
Ta=25C
f=1MHz
VR=0V
n=10pcs
480
500
360
15
490
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
400
10
500
Ta=25C
VR=30V
n=30pcs
4500
REVERSE CURRENT:I R(uA)
FORWARD VOLTAGE:V F(mV)
Ta=25C
IF=3A
n=30pcs
5
REVERSE VOLTAGE:V R(V)
VR-Ct CHARACTERISTICS
5000
410
PEAK SURGE
FORWARD CURRENT:I FSM(A)
0
20
AVE:9.8ns
Ifsm
80
70
8.3ms
8.3ms
1cyc
60
50
40
30
20
10
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
100
Mounted on alumina board
IM=10mA
IF=0.5A
100
100
D=1/2
2
Rth(j-a)
Ifsm
80
t
70
60
50
40
30
20
10
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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©2011 ROHM Co., Ltd. All rights reserved.
100
1ms
time
300us
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
90
10
Rth(j-c)
1
0.1
0.001
1.5
Sin(=180)
1
DC
0.5
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
1
2
3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
4
5
2011.05 - Rev.C
RB051M-2Y
Data Sheet
0A
Io
0V
VR
t
100
5
T
0A
Io
0V
VR
t
D=t/T
VR=10V
Tj=125C
5
T
D=t/T
VR=1V
Tj=125C
90
70
60
D=1/2
50
40
DC
30
20
10
DC
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
80
D=1/2
3
2
Sin(=180)
1
DC
D=1/2
4
3
Sin(=180)
2
1
Sin(=180)
0
0
0
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
20
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE:9.80kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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©2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.C
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R1120A