DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 POWER SAVING SOLENOID CONTROLLER WITH INTEGRATED SUPPLY REGULATION Check for Samples: DRV110 FEATURES 1 • • • • • Drives an External MOSFET With PWM to Control Solenoid Current – External Sense Resistor for Regulating Solenoid Current Fast Ramp-Up of Solenoid Current to Guarantee Activation Solenoid Current is Reduced in Hold Mode for Lower Power and Thermal Dissipation Ramp Peak Current, Keep Time at Peak Current, Hold Current and PWM Clock Frequency Can Be Set Externally. They Can Also Be Operated at Nominal Values Without External Components. Internal Supply Voltage Regulation – 15-V Nominal MOSFET Gate Drive Voltage • • • – External Pull-Up Resistor to Solenoid Supply Voltage Protection – Thermal Shutdown – Under Voltage Lockout (UVLO) – Maximum Ramp Time – Optional STATUS Output Operating Temperature Range: -40ºC to 105ºC 8-Pin and 14-Pin TSSOP Package Options APPLICATIONS • • Electromechanical Driver: Solenoids, Valves, Relays White Goods, Solar, Transportation DESCRIPTION The DRV110 is a PWM current controller for solenoids. It is designed to regulate the current with a well controlled waveform to reduce power dissipation. The solenoid current is ramped up fast to ensure opening of the valve or relay. After initial ramping the solenoid current is kept at peak value to ensure the correct operation, after which it is reduced to a lower hold level in order to avoid thermal problems and reduce power dissipation. The peak current duration is set with an external capacitor. The current ramp peak and hold levels, as well as PWM frequency can independently be set with external resistors. External setting resistors can also be omitted, if the default values for the corresponding parameters are suitable for the application. The DRV110 limits its own supply at VIN to 15 V which is also the gate drive voltage of an external switching device. For example, a MOSFET that is driving the solenoid load. If a lower gate drive voltage is required, an external supply of at least 6 V can be used. ORDERING INFORMATION (1) ORDERABLE PART NUMBER PACKAGE (2) (1) (2) TOP-SIDE MARKING (TSSOP-8) - PW Reel of 2000 DRV110PWR 110 (TSSOP-14) - PW Reel of 2000 DRV110APWR 110A For the most current packaging and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012–2013, Texas Instruments Incorporated DRV110 SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 www.ti.com TYPICAL APPLICATION Figure 1. Default Configuration With 8-Pin TSSOP Option Figure 2. External Parameter Setting for 14-Pin TSSOP Option 2 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 DEVICE INFORMATION Functional Block Diagram Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 3 DRV110 SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 www.ti.com Table 1. TERMINAL FUNCTIONS PIN (8-PIN PW) (1) PIN (14-PIN PW) KEEP 1 2 Keep time set PEAK 2 3 Peak current set HOLD - 4 Hold current set OSC 3 5 PWM frequency set VIN 4 7 6-V to 18-V supply GND 5 8 Ground SENSE 6 9 Solenoid current sense OUT 7 11 Solenoid switch gate drive STATUS - 12 Open drain fault indicator EN 8 13 Enable NC - 1, 6, 10, 14 NAME (1) DESCRIPTION No connect In the 8-pin package, the HOLD pin is not bonded out. For this package, the HOLD mode is configured to default (internal) settings. xxx xxx PW PACKAGE 8-PIN (TOP VIEW) 4 PW PACKAGE 14-PIN (TOP VIEW) KEEP 1 8 EN PEAK 2 7 OSC 3 VIN 4 NC 1 14 NC OUT KEEP 2 13 EN 6 SENSE PEAK 3 12 STATUS 5 GND HOLD 4 11 OUT OSC 5 10 NC NC 6 9 SENSE VIN 7 8 GND Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) VIN VALUE UNIT –0.3 to 20 V Voltage range on EN, STATUS, PEAK, HOLD, OSC, SENSE, KEEP –0.3 to 7 V Voltage range on OUT –0.3 to 20 V Input voltage range ESD rating HBM (human body model) 2000 CDM (charged device model) 500 V TJ Operating virtual junction temperature range –40 to 125 °C Tstg Storage temperature range –65 to 150 °C (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN NOM MAX IQ Supply current 1 1.5 3 VIN Device will start sinking current when VIN > 15 V to limit VIN 6 15 V 1 4.7 µF CIN Input capacitor between VIN and GND L Solenoid inductance TA Operating ambient temperature (1) (1) UNIT mA 1 H -40 105 °C 4.7-µF input capacitor and full wave rectified 230-Vrms AC supply results in approximately 500-mV supply ripple. THERMAL INFORMATION DRV110 THERMAL METRIC PWP Junction-to-ambient thermal resistance (1) θJA (2) UNITS 8 PINS 14 PINS 183.8 122.6 θJCtop Junction-to-case (top) thermal resistance 69.2 51.2 θJB Junction-to-board thermal resistance (3) 112.6 64.3 ψJT Junction-to-top characterization parameter (4) 10.4 6.5 ψJB Junction-to-board characterization parameter (5) 110.9 63.7 θJCbot Junction-to-case (bottom) thermal resistance (6) N/A N/A (1) (2) (3) (4) (5) (6) °C/W The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88. The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 5 DRV110 SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 www.ti.com ELECTRICAL CHARACTERISTICS VIN = 14 V, TA = -40°C to 105°C, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY IQ Standby current EN = 0, VIN = 14 V, bypass deactivated 200 250 Quiescent current EN = 1, VIN = 14 V, bypass deactivated 360 570 Internally regulated supply EN = 0, IVIN = 2 mA, bypass activated 10.5 15 19 EN = 1, IVIN = 2 mA, bypass activated 14.5 15 15.5 µA V GATE DRIVER VDRV Gate drive voltage Supply voltage in regulation (IVIN > 1 mA) IDRV_SINK Gate drive sink current VOUT = 15 V; VIN = 15 V IDRV_SOURCE Gate drive source current VOUT = GND; VIN = 15 V fPWM PWM clock frequency OSC = GND DMAX Maximum PWM duty cycle 100 % DMIN Minimum PWM duty cycle 7.5 % tD Start-up delay 8 15 VIN V 15 mA -15 -10 mA 20 27 kHz Delay between EN going high until gate driver starts switching, fPWM = 20 kHz 50 µs CURRENT CONTROLLER, INTERNAL SETTINGS IPEAK Peak current RSENSE = 1 Ω, PEAK = GND 270 300 330 mA IHOLD Hold current RSENSE = 1 Ω, HOLD = GND 40 50 65 mA CURRENT CONTROLLER, EXTERNAL SETTINGS tKEEP Externally set keep time at peak current VPEAK Externally set VPEAK VHOLD Externally set VHOLD fPWM Externally set PWM clock frequency CKEEP = 1 µF 100 RPEAK = 50 kΩ 900 RPEAK = 200 kΩ 300 RHOLD = 50 kΩ 150 RHOLD = 200 kΩ 50 ROSC = 50 kΩ 60 ROSC = 200 kΩ 20 ms mV mV kHz LOGIC INPUT LEVELS (EN) VIL Input low level VIH Input high level 1.65 1.3 REN Input pull-up resistance 350 V V 500 kΩ LOGIC OUTPUT LEVELS (STATUS) VOL Output low level Pull-down activated, ISTATUS = 2 mA IIL Output leakage current Pull-down deactivated, V(STATUS) = 5 V 0.3 V 2 µA UNDERVOLTAGE LOCKOUT VUVLO Undervoltage lockout threshold 4.6 V THERMAL SHUTDOWN TTSU Junction temperature startup threshold 140 °C TTSD Junction temperature shutdown threshold 160 °C 6 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 FUNCTIONAL DESCRIPTION DRV110 controls the current through the solenoid as shown in Figure 3. Activation starts when EN pin voltage is pulled high either by an external driver or internal pull-up. In the beginning of activation, DRV110 allows the load current to ramp up to the peak value IPEAK and it regulates it at the peak value for the time, tKEEP, before reducing it to IHOLD. The load current is regulated at the hold value as long as the EN pin is kept high. The initial current ramp-up time depends on the inductance and resistance of the solenoid. Once EN pin is driven to GND, DRV110 allows the solenoid current to decay to zero. ISOLENOID IPEAK IHOLD t tKEEP EN t Figure 3. Typical Current Waveform Through the Solenoid tKEEP is set externally by connecting a capacitor to the KEEP pin. A constant current is sourced from the KEEP pin that is driven into an external capacitor resulting in a linear voltage ramp. When the KEEP pin voltage reaches 100 mV, the current regulation reference voltage, VREF, is switched from VPEAK to VHOLD. Dependency of tKEEP from the external capacitor size can be calculated by: ésù tKEEP éës ùû = CKEEP éëF ùû × 105 ê ú ëF û (1) The current control loop regulates, cycle-by-cycle, the solenoid current by sensing voltage at the SENSE pin and controlling the external switching device gate through the OUT pin. During the ON-cycle, the OUT pin voltage is driven and kept high (equal to VIN voltage) as long as the voltage at the SENSE pin is less than VREF allowing current to flow through the external switch. As soon as the voltage at the SENSE pin is above VREF, the OUT pin voltage is immediately driven and kept low until the next ON-cycle is triggered by the internal PWM clock signal. In the beginning of each ON-cycle, the OUT pin voltage is driven and kept high for at least the time determined by the minimum PWM signal duty cycle, DMIN. VPEAK and VHOLD depend on fixed resistance values RPEAK and RHOLD as shown in Figure 4. If the PEAK pin is connected to ground, the peak current reference voltage, VPEAK, is at it’s default value (internal setting). The VPEAK value can alternatively be set by connecting an external resistor to ground from the PEAK pin. For example, if a 50-kΩ (= RPEAK) resistor is connected between PEAK and GND, and RSENSE = 1 Ω, then the externally set IPEAK level will be 900 mA. If RPEAK = 200 kΩ and RSENSE = 1 Ω, then the externally set IPEAK level will be 300 mA. In case RSENSE = 2 Ω instead of 1 Ω, then IPEAK = 450 mA (when RPEAK = 50 kΩ) and IPEAK = 150 mA (when RPEAK = 200 kΩ). External setting of the HOLD current, IHOLD, works in the same way, but the current levels are 1/6 of the IPEAK levels. External settings for IPEAK and IHOLD are independent of each other. If RPEAK is decreased below 33.33 kΩ (typ value), then the reference is clamped to the internal setting. The same is valid for RHOLD and IHOLD. IPEAK and IHOLD values can be calculated by using the formula below. 1W 900mA IPEAK = × × 66.67kW ;66.67kW < RPEAK < 2MW RSENSE RPEAK (2) Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 7 DRV110 SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 I HOLD = 1W RSENSE × www.ti.com 150mA × 66.67kW ;66.67kW < RHOLD < 333kW RHOLD (3) Figure 4. PEAK and HOLD Mode VREF Settings 8 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 DRV110 www.ti.com SLVSBA8A – MARCH 2012 – REVISED JANUARY 2013 Frequency of the internal PWM clock signal, PWMCLK, that triggers each OUT pin ON-cycle can be adjusted by external resistor, ROSC, connected between OSC and GND. Frequency as a function of resistor value is shown in Figure 5. Default frequency is used when OSC is connected to GND directly. PWM frequency as a function of external fixed adjustment resistor value (greater than 66.67 kΩ) is given below. 60kHz fPWM = × 66.67kW ;66.67kW < ROSC < 2MW ROSC (4) Figure 5. PWM Clock Frequency Setting Voltage at the OUT pin, that is the gate voltage of an external switching device, is equal to VIN voltage during ON-cycle. It is driven to ground during OFF-cycle. VIN voltages below 15 V can be supplied directly from an external voltage source. Supply voltages of at least 6 V are supported. DRV110 is able to regulate VIN voltage to 15 V from a higher external supply voltage, VS, by an internal bypass regulator that replicates the function of an ideal Zener diode. This requires that the supply current is sufficiently limited by an external resistor between VS and the VIN pin. An external capacitor connected to the VIN pin is used to store enough energy to charge the external switch gate capacitance at the OUT pin. Current limiting resistor size to keep quiescent current less than 1 mA can be calculated by Equation 5. VS,max DC - 15V RS = 1mA + IGate,AVE (5) Open-drain pull-down path at the STATUS pin is deactivated if either under voltage lockout or thermal shutdown blocks have triggered. Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DRV110 9 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) DRV110APWR ACTIVE TSSOP PW 14 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to +105 110A DRV110PWR ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to +105 110 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. 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Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DRV110APWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 DRV110PWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DRV110APWR TSSOP PW 14 2000 367.0 367.0 35.0 DRV110PWR TSSOP PW 8 2000 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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