PD - 97425
IRGP4069DPbF
IRGP4069D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
C
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
VCES = 600V
IC(Nominal) = 35A
tSC ≥ 5µs, TJ(max) = 175°C
G
VCE(on) typ. = 1.6V
E
n-channel
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
C
GC
E
TO-247AC
IRGP4069DPbF
G
Gate
E
GC
TO-247AD
IRGP4069D-EPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
76
Continuous Collector Current
50
35
ICM
Nominal Current
Pulse Collector Current, VGE = 15V
IC @ TC = 100°C
INOMINAL
105
c
ILM
Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
d
140
VGE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
268
PD @ TC = 100°C
Maximum Power Dissipation
134
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
140
76
50
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RθJC (IGBT)
f
f
Min.
Typ.
Max.
Units
–––
–––
0.56
°C/W
–––
–––
1.0
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
1
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10/2/09
IRGP4069DPbF/IRGP4069D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
Min.
Typ.
Max.
Units
600
—
—
V
—
1.3
—
—
1.6
1.85
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.9
—
2.0
—
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-18
—
gfe
ICES
Forward Transconductance
—
25
—
Collector-to-Emitter Leakage Current
—
1.0
70
—
770
—
—
2.2
3.8
VFM
IGES
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
—
1.4
—
—
—
±100
Conditions
VGE = 0V, IC = 100µA
e
mV/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 35A, VGE = 15V, TJ = 25°C
V
IC = 35A, VGE = 15V, TJ
V
d
d
= 175°C d
IC = 35A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.0mA
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 35A, PW = 60µs
S
µA
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
V
IF = 35A
IF = 35A, TJ = 175°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Min.
Typ.
Max.
—
69
104
Qge
Gate-to-Emitter Charge (turn-on)
—
18
27
Qgc
Gate-to-Collector Charge (turn-on)
—
29
44
Eon
Turn-On Switching Loss
—
390
508
Eoff
Turn-Off Switching Loss
—
632
753
Etotal
Total Switching Loss
—
1022
1261
td(on)
Turn-On delay time
—
46
56
tr
Rise time
—
33
42
td(off)
Turn-Off delay time
—
105
117
tf
Fall time
—
44
54
Eon
Turn-On Switching Loss
—
1013
—
Eoff
Turn-Off Switching Loss
—
929
—
Etotal
Total Switching Loss
—
1942
—
td(on)
Turn-On delay time
—
43
—
tr
Rise time
—
35
—
td(off)
Turn-Off delay time
—
127
—
tf
Fall time
—
61
—
Units
Conditions
IC = 35A
nC
VGE = 15V
VCC = 400V
IC = 35A, VCC = 400V, VGE = 15V
µJ
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 35A, VCC = 400V, VGE = 15V
ns
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
IC = 35A, VCC = 400V, VGE=15V
µJ
RG=10Ω, L=200µH, LS=150nH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 35A, VCC = 400V, VGE = 15V
ns
RG = 10Ω, L = 200µH, LS = 150nH
TJ = 175°C
VGE = 0V
Cies
Input Capacitance
—
2113
—
Coes
Output Capacitance
—
197
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
65
—
f = 1.0Mhz
TJ = 175°C, IC = 140A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
pF
Rg = 10Ω, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
VCC = 400V, Vp =600V
Erec
trr
Reverse Recovery Energy of the Diode
—
304
—
µJ
TJ = 175°C
Diode Reverse Recovery Time
—
120
—
ns
VCC = 400V, IF = 35A
Irr
Peak Reverse Recovery Current
—
25
—
A
VGE = 15V, Rg = 10Ω, L =210µH, Ls = 150nH
Rg = 10Ω, VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 19µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRGP4069DPbF/IRGP4069D-EPbF
80
300
70
250
60
200
Ptot (W)
IC (A)
50
40
30
150
100
20
50
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
10
100
10µsec
IC (A)
IC (A)
100µsec
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
140
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
80
VGE = 18V
VGE = 15V
VGE = 12V
120
100
ICE (A)
ICE (A)
100
60
60
40
20
20
0
VGE = 10V
VGE = 8.0V
80
40
0
0
2
4
6
VCE (V)
8
10
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60µs
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1000
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = ≤60µs
3
IRGP4069DPbF/IRGP4069D-EPbF
140
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
80
100
IF (A)
ICE (A)
100
120
60
60
40
40
20
20
0
-40°C
25°C
175°C
80
0
0
2
4
6
8
10
0.0
1.0
2.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
20
20
18
18
16
16
14
14
ICE = 18A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = ≤60µs
ICE = 35A
10
ICE = 70A
8
12
ICE = 18A
ICE = 35A
10
ICE = 70A
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
140
IC, Collector-to-Emitter Current (A)
18
16
14
VCE (V)
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
12
ICE = 18A
ICE = 35A
ICE = 70A
10
8
6
4
2
120
TJ = 25°C
100
80
T J = 175°C
60
40
20
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
4.0
VF (V)
VCE (V)
12
3.0
20
4
5
6
7
8
9
10 11 12 13 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 60µs
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IRGP4069DPbF/IRGP4069D-EPbF
4000
1000
3500
2500
Swiching Time (ns)
Energy (µJ)
3000
EON
2000
1500
EOFF
tdOFF
100
tF
1000
tdON
500
tR
0
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
3000
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
2500
Swiching Time (ns)
Energy (µJ)
EON
2000
EOFF
1500
tdOFF
100
tF
tdON
1000
tR
500
10
0
25
50
75
100
0
10
30
40
50
RG (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V
35
26
RG = 10Ω
30
24
22
RG = 22Ω
25
IRR (A)
IRR (A)
20
RG = 47Ω
20
20
18
15
16
RG = 100Ω
10
14
10
20
30
40
50
60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
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70
0
20
40
60
80
100
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
5
IRGP4069DPbF/IRGP4069D-EPbF
26
2500
24
2250
22
2000
70A
QRR (nC)
IRR (A)
10Ω
20
47Ω
18
16
1250
14
1000
300
400
500
600
22Ω
1750
1500
200
35A
18A
100Ω
100 200 300 400 500 600 700 800 900
700
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
300
20
400
RG = 10Ω
Isc
350
15
Time (µs)
Energy (µJ)
RG = 47Ω
200
10
150
5
75
RG = 100Ω
150
0
0
100
10
20
30
40
50
60
8
70
10
12
16
18
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
10000
VGE, Gate-to-Emitter Voltage (V)
16
Cies
Capacitance (pF)
14
VGE (V)
IF (A)
1000
Coes
100
Cres
VCES = 400V
VCES = 300V
14
12
10
8
6
4
2
0
10
0
100
200
300
400
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
Current (A)
250
225
Tsc
RG = 22Ω
300
500
0
10
20
30
40
50
60
70
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 35A; L = 740µH
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IRGP4069DPbF/IRGP4069D-EPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τ2
τ1
τ3
τ2
τ4
τ3
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
τi (sec)
Ri (°C/W)
τC
τ
0.01041
0.000006
0.15911
0.000142
0.23643
0.002035
0.15465
0.013806
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τ1
τ2
τ2
τ3
τ3
τ4
τ4
0.01716
τi (sec)
0.000031
0.35875
0.000517
0.41334
0.004192
0.20121 0.024392
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
Ri (°C/W)
τC
τ
Ci= τi/Ri
Ci i/Ri
1E-005
R4
R4
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP4069DPbF/IRGP4069D-EPbF
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
DUT
Rg
22K
C sense
VCC
G force
DUT
0.0075µF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
Fig.C.T.6 - BVCES Filter Circuit
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IRGP4069DPbF/IRGP4069D-EPbF
tf
400
600
50
500
40
400
30
300
200
20
V CE (V)
300
ICE (A)
VCE (V)
90% ICE
40
30
90% test
current
200
10
5% ICE
0
0
-10
0
0.5
1
1.5
2
-10
6.4
6.6
7
7.2
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
700
40
QRR
30
Vce (V)
10
0
10%
Peak
IRR
Peak
IRR
350
ICE
600
t RR
20
V F (V)
6.8
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
-20
-30
-0.3
0
-100
time(µs)
-10
10
Eon
Loss
Eoff Loss
-100
-0.5
20
5% V CE
10% test
current
100
0
50
tr
5% V CE
100
60
TEST
CURRENT
300
500
250
400
200
VCE
300
150
200
100
100
50
0
-0.2
-0.1
0
0.1
0.2
0
-100
-4.5
-50
0.5
5.5
10.5
time (µS)
Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
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ICE (A)
500
60
ICE (A)
600
9
IRGP4069DPbF/IRGP4069D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/<
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGP4069DPbF/IRGP4069D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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,17(51$7,21$/
5(&7,),(5
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/09
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