PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V RDS(on) = 28mΩ G ID = 30A S Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\ The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRLR2908 I-Pak IRLU2908 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 39 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 28 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 30 IDM Pulsed Drain Current 150 PD @TC = 25°C Maximum Power Dissipation 120 W VGS Linear Derating Factor Gate-to-Source Voltage 0.77 ± 16 W/°C V 180 mJ EAS c EAS (tested) Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR dv/dt TJ TSTG i c See Fig.12a,12b,15,16 h Peak Diode Recovery dv/dt e A mJ V/ns °C 2.3 -55 to + 175 Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Parameter RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient www.irf.com 250 Repetitive Avalanche Energy Thermal Resistance RθJC d j 300 (1.6mm from case ) Typ. Max. Units ––– 1.3 °C/W ––– 40 ––– 110 1 12/7/04 IRLR/U2908PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 22.5 28 mΩ ––– 25 30 V VGS = 0V, ID = 250µA VGS = 10V, ID = 23A VGS = 4.5V, ID = 20A f f VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 250µA gfs IDSS Forward Transconductance 35 ––– ––– S VDS = 25V, ID = 23A Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 80V, VGS = 0V ––– ––– 250 ––– ––– 200 nA VGS = 16V nC ID = 23A IGSS Gate-to-Source Forward Leakage VDS = 80V, VGS = 0V, TJ = 125°C VGS = -16V Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 22 33 Qgs Gate-to-Source Charge ––– 6.0 9.1 VDS = 64V Qgd Gate-to-Drain ("Miller") Charge ––– 11 17 VGS = 4.5V td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 95 ––– ID = 23A td(off) Turn-Off Delay Time ––– 36 ––– RG = 8.3Ω tf Fall Time ––– 55 ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package and center of die contact VGS = 0V ns VDD = 40V VGS = 4.5V nH f Between lead, D G S Ciss Input Capacitance ––– 1890 ––– Coss Output Capacitance ––– 260 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 35 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 1920 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 310 ––– VGS = 0V, VDS = 0V to 64V pF Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage ––– trr Reverse Recovery Time ––– Qrr Reverse Recovery Charge ––– ton Forward Turn-On Time c ––– ––– 39 D 150 showing the integral reverse ––– 1.3 V p-n junction diode. TJ = 25°C, IS = 23A, VGS = 0V 75 110 ns 210 310 nC A ––– Conditions MOSFET symbol ––– G TJ = 25°C, IF = 23A, VDD = 25V di/dt = 100A/µs S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes through are on page 11 HEXFET® is a registered trademark of International Rectifier. 2 www.irf.com IRLR/U2908PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 2.5V 1 0.1 100 BOTTOM VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 2.5V 10 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.01 0.01 0.1 1 10 0.01 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 60 G FS , Forward Transconductance (S) ID, Drain-to-Source Current (Α) 0.1 100 T J = 175°C T J = 25°C 10 VDS = 25V 20µs PULSE WIDTH 1 2 3 4 VGS , Gate-to-Source Voltage (V) 5 TJ = 25°C 50 40 T J = 175°C 30 20 10 VDS = 10V 20µs PULSE WIDTH 0 0 10 20 30 40 50 60 ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Typical Forward Transconductance vs. Drain Current 3 IRLR/U2908PbF 100000 VGS , Gate-to-Source Voltage (V) ID= 23A Coss = Cds + Cgd 10000 C, Capacitance(pF) 5.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 Coss 100 Crss 4.0 VDS= 16V 3.0 2.0 1.0 0.0 10 1 10 0 100 10 15 20 25 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 100.00 ID, Drain-to-Source Current (A) 1000.00 ISD, Reverse Drain Current (A) 5 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) T J = 25°C 1.00 VGS = 0V 0.10 0.2 0.4 0.6 0.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 175°C 10.00 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 64V VDS= 40V 1.8 100µsec 10 1msec 1 10msec Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U2908PbF 40 35 ID, Drain Current (A) 30 25 20 15 10 5 ID = 38A 2.5 VGS = 4.5V 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 3.0 0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 P DM t1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC +T C 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U2908PbF DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 400 15V ID 9.3A 16A BOTTOM 23A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 2.5 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V 2.0 1.5 ID = 250µA 1.0 0.5 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage vs. Temperature www.irf.com IRLR/U2908PbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 23A 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 7 IRLR/U2908PbF D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRLR/U2908PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LOT CODE www.irf.com 34 DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE 9 IRLR/U2908PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 919A 56 78 AS S EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 AS S EMBLY LOT CODE 10 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S IT E CODE www.irf.com IRLR/U2908PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25Ω, IAS = 23A, VGS =10V. Part not recommended for use above this value. ISD ≤ 23A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/