INTEGRATED CIRCUITS DATA SHEET TEA1201TS 0.95 V starting basic power unit Product specification 2002 Jun 06 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 QUICK REFERENCE DATA 6 BLOCK DIAGRAM 7 PINNING INFORMATION 7.1 7.2 Pinning Pin description 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 Control mechanism Synchronous rectification Start-up Undervoltage lockout Shut-down Power switches Temperature protection Current limiters External synchronization and PWM-only mode Behaviour at input voltage exceeding the specified range Control of the additional switch Low battery detector 9 LIMITING VALUES 10 THERMAL CHARACTERISTICS 11 QUALITY SPECIFICATION 12 CHARACTERISTICS 13 APPLICATION INFORMATION 13.1 External component selection 14 PACKAGE OUTLINE 15 SOLDERING 15.1 Introduction to soldering surface mount packages Reflow soldering Wave soldering Manual soldering Suitability of surface mount IC packages for wave and reflow soldering methods 15.2 15.3 15.4 15.5 16 DATA SHEET STATUS 17 DEFINITIONS 18 DISCLAIMERS 2002 Jun 06 2 Philips Semiconductors Product specification 0.95 V starting basic power unit 1 TEA1201TS 3 FEATURES • Complete DC-to-DC converter circuit, one current switch and a battery low detector The TEA1201TS is a fully integrated battery power unit including a high-efficiency DC-to-DC converter which runs from a 1-cell NiCd or NiMH battery, a current switch and a low battery detector. The circuit can be arranged in several ways to optimize the application circuit of a power supply system. Therefore, the DC-to-DC converter can be arranged for upconversion or downconversion and the low battery detector can be configured for several types of batteries. Accurate low battery detection is possible while all other blocks are switched off. • Configurable for 1, 2 or 3-cell Nickel-Cadmium (NiCd) or Nickel Metal Hydride (NiMH) batteries and 1 Lithium Ion (Li-Ion) battery • Guaranteed DC-to-DC converter start-up from 1-cell NiCd or NiMH battery, even with a load current • Upconversion or downconversion • Internal power MOSFETs featuring a low RDSon of approximately 0.1 Ω The DC-to-DC converter features efficient, compact and dynamic power conversion using a digital control concept comparable with Pulse Width Modulation (PWM) and Pulse Frequency Modulation (PFM), integrated CMOS power switches with a very low RDSon and fully synchronous rectification. • Synchronous rectification for high efficiency • Soft start • PWM-only operating option • Stand-alone low battery detector requires no additional supply voltage The device operates at a switching frequency of 600 kHz which enables the use of external components with minimum size. The switching frequency can be synchronized to an external high frequency clock signal. Optionally, the device can be kept in PWM control mode only. Deadlock is prevented by an on-chip undervoltage lockout circuit. • Low battery detection level at 0.90 V, externally adjustable to a higher level • Adjustable output voltages • Shut-down function • Small outline package • Advanced 0.6 µm BICMOS process. 2 Active current limiting enables efficient conversion in pulsed-load systems such as Global System for Mobile communication (GSM) and Digital Enhanced Cordless Telecommunications (DECT). APPLICATIONS • Cellular phones • Cordless phones The switch can be used to control the connection of (a part of) the output load. It shows a low pin-to-pin resistance of 500 mΩ. • Personal Digital Assistants (PDAs) • Portable audio players The low battery detector has a built-in detection level which is optimum for a 1-cell NiCd or NiMH battery. • Pagers • Mobile equipment. 4 GENERAL DESCRIPTION ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TEA1201TS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1 2002 Jun 06 3 Philips Semiconductors Product specification 0.95 V starting basic power unit 5 TEA1201TS QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC-to-DC converter UPCONVERSION VI(up) input voltage VI(start) − 5.50 V VO(up) output voltage VO(uvlo) − 5.50 V VI(start) start-up input voltage 0.93 0.96 1.00 V VO(uvlo) undervoltage lockout voltage 2.0 2.2 2.4 V IL < 10 mA DOWNCONVERSION VI(dwn) input voltage VO(uvlo) − 5.50 V VO(dwn) output voltage 1.30 − 5.50 V − 110 − µA CURRENT LEVELS Iq(DCDC) quiescent current at pin UPOUT/DNIN Ishdwn current in shut-down mode VLBI1 = VI(up) = 1.2 V − 65 − µA ILX(max) maximum continuous current at pins LX1 and LX2 Tamb = 80 °C − − 1.0 A ∆Ilim current limit deviation Ilim set to 1.0 A upconversion −12 − +12 % downconversion −12 − +12 % POWER MOSFETS RDSon(N) drain-to-source on-state resistance NFET Tj = 27 °C; IDS = 100 mA − 110 200 mΩ RDSon(P) drain-to-source on-state resistance PFET Tj = 27 °C; IDS = −100 mA − 125 250 mΩ efficiency upconversion VO up to 3.3 V; see Fig.9 VI = 1.2 V; IL = 100 mA − 84 − % VI = 2.4 V; IL = 10 mA − 92 − % 480 600 720 kHz EFFICIENCY η TIMING fsw switching frequency PWM mode fi(sync) synchronization clock input frequency 6 13 20 MHz tstart start-up time − 10 − ms Switch RDSon drain-to-source resistance in switched-on state VO(up) = VI(down) = 5 V; VFB1 < 0.4 V − 500 750 mΩ IO(max) maximum output current in switched-on state VFB1 < 0.4 V − − 0.40 A 1.165 1.190 1.215 V General characteristics Vref 2002 Jun 06 reference voltage 4 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 9 SHDWN0 TEA1201TS LOW BATTERY DETECTOR LBO LX1 LX2 6 7 10 3, 4 1 P-type POWER FET 16 5 FB1 UPOUT/DNIN INTERNAL SUPPLY sense FET ILIM OUT1 8 START-UP CIRCUIT 0.95 V starting basic power unit BLOCK DIAGRAM LBI1 Philips Semiconductors 6 2002 Jun 06 handbook, full pagewidth GND 5 sense FET N-type POWER FET Vref CONTROL LOGIC AND MODE GEARBOX CURRENT LIMIT COMPARATOR TEMPERATURE PROTECTION 13 MHz OSCILLATOR 13 TIME COUNTER SYNC GATE 14 12 FB0 Vref REFERENCE 11 VOLTAGE Vref DIGITAL CONTROLLER 2 15 MGW787 GND0 SYNC/PWM SHDWN0 U/D Product specification TEA1201TS Fig.1 Block diagram. Philips Semiconductors Product specification 0.95 V starting basic power unit 7 TEA1201TS PINNING INFORMATION 7.1 Pinning handbook, halfpage LX1 1 16 LX2 SHDWN0 2 15 U/D UPOUT/DNIN 3 14 SYNC/PWM UPOUT/DNIN 4 13 GND0 TEA1201TS ILIM 5 12 FB0 OUT1 6 11 Vref FB1 7 10 LBO GND 8 LBI1 9 MGW788 Fig.2 Pin configuration. 7.2 Pin description Table 1 SSOP16 package SYMBOL PIN DESCRIPTION LX1 1 inductor connection 1 SHDWN0 2 DC-to-DC converter shut-down input UPOUT/DNIN 3 up mode: DC-to-DC converter output; down mode: DC-to-DC converter input UPOUT/DNIN 4 ILIM 5 current limiting resistor connection OUT1 6 switch output FB1 7 switch control input GND 8 internal supply ground LBI1 9 low battery detector input 1 LBO 10 low battery detector output Vref 11 reference voltage FB0 12 DC-to-DC converter feedback input GND0 13 DC-to-DC converter ground SYNC/PWM 14 synchronization clock input or PWM-only selection input U/D 15 conversion mode selection input LX2 16 inductor connection 2 2002 Jun 06 6 Philips Semiconductors Product specification 0.95 V starting basic power unit 8 8.1 TEA1201TS FUNCTIONAL DESCRIPTION Figure 4 shows the spread of the output voltage window. The absolute value is mostly dependent on spread, while the actual window size (Vwdw(high) − Vwdw(low)) is not affected. For one specific device, the output voltage will not vary more than 2% (typical value). Control mechanism The TEA1201TS DC-to-DC converter is able to operate in PFM (discontinuous conduction) or PWM (continuous conduction) operating mode. All switching actions are completely determined by a digital control circuit which uses the output voltage level as its control input. This novel digital approach enables the use of a new pulse width and frequency modulation scheme, which ensures optimum power efficiency over the complete range of operation of the converter. In low output power situations, the TEA1201TS will switch over to PFM (discontinuous conduction) operating mode. In this mode, regulation information from an earlier PWM operating mode is used. This results in optimum inductor peak current levels in the PFM mode, which are slightly larger than the inductor ripple current in the PWM mode. As a result, the transition between PFM and PWM mode is optimum under all circumstances. In the PFM mode the TEA1201TS regulates the output voltage to the high window limit as shown in Fig.3. When high output power is requested, the device will operate in PWM (continuous conduction) operating mode. This results in minimum AC currents in the circuit components and hence optimum efficiency, minimum costs and low EMC. In this operating mode, the output voltage is allowed to vary between two predefined voltage levels. As long as the output voltage stays within this so-called window, switching continues in a fixed pattern. 8.2 For optimum efficiency over the whole load range, synchronous rectifiers inside the TEA1201TS ensure that during the whole second switching phase, all inductor current will flow through the low-ohmic power MOSFETs. Special circuitry is included which detects when the inductor current reaches zero. Following this detection, the digital controller switches off the power MOSFET and proceeds with regulation. When the output voltage reaches one of the window borders, the digital controller immediately reacts by adjusting the pulse width and inserting a current step in such a way that the output voltage stays within the window with higher or lower current capability. This approach enables very fast reaction to load variations. Figure 3 shows the response of the converter to a sudden load increase. The upper trace shows the output voltage. 8.3 Start-up Start-up from low input voltage in the boost mode is realized by an independent start-up oscillator, which starts switching the N-type power MOSFET as soon as the low-battery detector detects a sufficiently high voltage. The inductor current is limited internally to ensure soft-starting. The switch actions of the start-up oscillator will increase the output voltage. As soon as the output voltage is high enough for normal regulation, the digital control system takes control over the power MOSFETs. The ripple on top of the DC level is a result of the current in the output capacitor, which changes in sign twice per cycle, times the internal Equivalent Series Resistance (ESR) of the capacitor. After each ramp-down of the inductor current, i.e. when the ESR effect increases the output voltage, the converter determines what to do in the next cycle. As soon as more load current is taken from the output the output voltage starts to decay. When the output voltage becomes lower than the low limit of the window, a corrective action is taken by a ramp-up of the inductor current during a much longer time. As a result, the DC current level is increased and normal PWM control can continue. The output voltage (including ESR effect) is again within the predefined window. 2002 Jun 06 Synchronous rectification 8.4 Undervoltage lockout As a result of too high a load or disconnection of the input power source, the output voltage can drop so low that normal regulation cannot be guaranteed. In this event, the device switches back to start-up mode. If the output voltage drops even further, switching is stopped completely. 7 Philips Semiconductors Product specification 0.95 V starting basic power unit load increase handbook, full pagewidth TEA1201TS start corrective action Vo high window limit low window limit time IL time MGK925 Fig.3 Response to load increase. handbook, full pagewidth Vwdw(high) Vwdw(high) VO 2% 2% +2% Vwdw(low) −2% Vwdw(low) Vwdw(high) 2% Vwdw(low) typical situation maximum positive spread maximum negative spread MGW789 Fig.4 Output voltage window spread. 2002 Jun 06 8 Philips Semiconductors Product specification 0.95 V starting basic power unit 8.5 TEA1201TS Shut-down 8.10 When the shut-down input is set HIGH, the DC-to-DC converter disables both switches and power consumption is reduced to a few microamperes. 8.6 In general, an input voltage exceeding the specified range is not recommended since instability may occur. There are two exceptions: Power switches 1. Upconversion: at an input voltage higher than the target output voltage, but up to 5.5 V, the converter will stop switching and the external Schottky diode will take over. The output voltage will equal the input voltage minus the diode voltage drop. Since all current flows through the external diode in this situation, the current limiting function is not active. The power switches in the IC are one N-type and one P-type power MOSFET, both having a typical drain-to-source resistance of 100 mΩ. The maximum average current in the power switches is 1.0 A at Tamb = 80 °C. 8.7 Temperature protection In the PWM mode, the P-type power MOSFET is always on when the input voltage exceeds the target output voltage. The internal synchronous rectifier ensures that the inductor current does not fall below zero. As a result, the achieved efficiency is higher in this situation than standard PWM-controlled converters achieve. When the DC-to-DC converter operates in the PWM mode, and the die temperature gets too high (typical value is 190 °C), the converter and the switch stop operating. They resume operation when the die temperature falls below 90 °C again. As a result, low frequency cycling between the on and off state will occur. It should be noted that in the event of device temperatures at the cut-off limit, the application differs strongly from maximum specifications. 8.8 Behaviour at input voltage exceeding the specified range 2. Downconversion: when the input voltage is lower than the target output voltage, but higher than 2.2 V, the P-type power MOSFET will stay conducting resulting in an output voltage being equal to the input voltage minus some resistive voltage drop. The current limiting function remains active. Current limiters If the current in one of the power switches exceeds the programmed limit in the PWM mode, the current ramp is stopped immediately and the next switching phase is entered. Current limiting is required to keep power conversion efficient during temporary high loads. Furthermore, current limiting protects the IC against overload conditions, inductor saturation, etc. 8.11 Control of the additional switch The switch will be in the on-state when its feedback input is connected to ground. When the feedback input is higher than 2 V, the power FET will be high-ohmic. The switch always turns to the high-ohmic state when the shutdown input is made HIGH. The current limiting level is set by an external resistor which must be connected between pin ILIM and ground for downconversion, or between pins ILIM and UPOUT/DNIN for upconversion. 8.12 Low battery detector External synchronization and PWM-only mode The low battery detector is an autonomous circuit which can work at an input voltage down to 0.90 V. It is always on, even when all other blocks are in the shut-down mode. If an external high-frequency clock or a HIGH level is applied to pin SYNC/PWM, the TEA1201TS will use PWM regulation independent of the load applied. The low battery input (pin LBI1) is tuned to accept a 1-cell NiCd or NiMH battery voltage directly. Hysteresis is included for correct operation. In the event of a high-frequency clock being applied, the switching frequency in the PWM mode will be exactly that frequency divided by 22. In the PWM mode the quiescent current of the device increases. The output of the low battery detector on pin LBO is an open-collector output. The output is high (i.e. no current is sunk by the collector) when the input voltage of the detector is below the lower detection level. 8.9 In the event that no external synchronization or PWM mode selection is necessary, pin SYNC/PWM must be connected to ground. 2002 Jun 06 9 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vn PARAMETER voltage on any pin CONDITIONS MIN. MAX. UNIT shut-down mode −0.2 +6.5 V operating mode −0.2 +5.5 V Tj junction temperature −40 +150 °C Tamb ambient temperature −20 +80 °C Tstg storage temperature −40 +125 °C Ves electrostatic handling voltage notes 1 and 2 Class II V Notes 1. ESD specification is in accordance with the JEDEC standard: a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 kΩ series resistor. b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 µH series inductor. 2. Exception is pin ILIM: 1000 V HBM and 100 V MM. 10 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient in free air 11 QUALITY SPECIFICATION In accordance with “SNW-FQ-611D”. 2002 Jun 06 10 VALUE UNIT 143 K/W Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS 12 CHARACTERISTICS Tamb = −20 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC-to-DC converter UPCONVERSION; PIN U/D = LOW VI(up) input voltage VI(start) − 5.50 V VO(up) output voltage VO(uvlo) − 5.50 V VI(start) start-up input voltage IL < 10 mA 0.93 0.96 1.00 V VO(uvlo) undervoltage lockout voltage note 1 2.0 2.2 2.4 V note 2 VO(uvlo) − 5.50 V 1.30 − 5.50 V PWM mode 1.5 2.0 2.5 % DOWNCONVERSION; PIN U/D = HIGH VI(dwn) input voltage VO(dwn) output voltage REGULATION ∆VO(wdw) output voltage window size as a function of output voltage CURRENT LEVELS Iq(DCDC) quiescent current at pin UPOUT/DNIN note 3 − 110 − µA Ishdwn current in shut-down mode VLBI1 = VI(up) = 1.2 V − 65 − µA Ilim(max) maximum current limit − 5 − A ∆Ilim current limit deviation upconversion −12 − +12 % downconversion −12 − +12 % − − 1.0 A ILX(max) maximum continuous current at pins LX1 and LX2 Ilim set to 1.0 A; note 4 Tamb = 80 °C POWER MOSFETS RDSon(N) drain-to-source on-state resistance NFET Tj = 27 °C; IDS = 100 mA − 110 200 mΩ RDSon(P) drain-to-source on-state resistance PFET Tj = 27 °C; IDS = −100 mA − 125 250 mΩ EFFICIENCY η efficiency upconversion VO up to 3.3 V; see note 5 and Fig.9 VI = 1.2 V; IL = 100 mA − 84 − % VI = 2.4 V; IL = 10 mA − 92 − % 480 600 720 kHz 6 13 20 MHz − 10 − ms 0 − 0.4 V TIMING fsw switching frequency fi(sync) synchronization clock input frequency tstart start-up time PWM mode note 6 DIGITAL INPUT LEVELS VlL(n) LOW-level input voltage on all digital pins 2002 Jun 06 11 Philips Semiconductors Product specification 0.95 V starting basic power unit SYMBOL VIH(n) TEA1201TS PARAMETER HIGH-level input voltage CONDITIONS MIN. TYP. MAX. UNIT note 7 on pins SYNC/PWM, SHDWN0 and SHDWN2 0.55V4 − V4 + 0.3 V all other digital input pins V4 − 0.4 − V4 + 0.3 V Switch: see Fig.5 RDSon drain-to-source resistance in switched-on state VO(up) = VI(dwn) = 5 V; VFB1 < 0.4 V − 500 750 mΩ IO(max) maximum output current in switched-on state VFB1 < 0.4 V − − 0.40 A Low battery detector ILBD supply current of detector VI = 0.9 V − 20 − µA tt(HL) transition time falling Vbat − 2 − µs falling Vbat 0.87 0.90 0.93 V DETECTION INPUT PIN LBI1 Vdet low battery detection level Vhys low battery detection hysteresis − 20 − mV TCVdet temperature coefficient of detection level − 0 − mV/K TCVhys temperature coefficient of detection hysteresis − 0.175 − mV/K 15 − µA DETECTION OUTPUT PIN LB0 IO(sink) output sink current − General characteristics Vref reference voltage Iq quiescent current at pin UPOUT/DNIN Tamb Tmax 1.165 1.190 1.215 − 270 − µA ambient temperature −20 +25 +80 °C internal temperature for cut-off − 190 − °C all blocks operating V Notes 1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level is measured at pin UPOUT/DNIN. 2. When VI is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain conducting (duty factor is 100%), resulting in VO following VI. 3. The quiescent current is specified as the input current in the upconversion configuration at VI = 1.20 V and VO = 3.30 V, using L1 = 6.8 µH, R1 = 150 kΩ and R2 = 91 kΩ. 4. The current limit is defined by resistor R10. This resistor must have a tolerance of 1%. 5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1 Ω and an inductor of 6.8 µH with an ESR of 0.05 Ω and a sufficient saturation current level. 6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the output reaches 3.30 V. The output capacitance equals 100 µF, the inductance equals 6.8 µH and no load is present. 7. V4 is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V4 − 1 V, the quiescent current of the device will increase. 2002 Jun 06 12 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS MGU641 600 handbook, full pagewidth RDS(on) mΩ 500 SWITCH 400 300 200 100 0 0.00 1.00 2.00 3.00 4.00 5.00 Fig.5 Switch drain-to-source on-state resistance as a function of input voltage. 2002 Jun 06 13 VI (V) 6.00 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS 13 APPLICATION INFORMATION handbook, full pagewidth TEA1201TS DC/DC UPCONVERTER Vout_dcdc SWITCH LOW BATTERY DETECTOR Vout_switched low-batt Equivalent block diagram D1 L1 LX1 LX2 C1 Vref 1 5 16 4 ILIM UPOUT/DNIN 3 11 12 C5 R lim Vout_dcdc R1 FB0 C2 R2 LBI1 9 TEA1201TS U/D 15 6 LBO low-batt SYNC/PWM SHDWN0 Vout_switched 10 7 FB1 switch_on 14 2 8 R7 OUT1 13 GND GND0 MGW790 Fig.6 1-cell NiCd or NiMH battery powered equipment. 2002 Jun 06 14 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS handbook, full pagewidth TEA1201TS DC/DC UPCONVERTER Vout_dcdc SWITCH LOW BATTERY DETECTOR Vout_switched low-batt Equivalent block diagram D1 L1 LX1 LX2 C1 Vref 1 5 16 4 ILIM UPOUT/DNIN 3 11 12 C5 R1 9 TEA1201TS U/D 15 6 LBO SYNC/PWM SHDWN0 OUT1 Vout_switched 10 7 FB1 switch_on 14 2 8 R7 C2 R2 LBI1 low-batt Vout_dcdc FB0 R8 R9 R lim 13 GND GND0 MGW791 Fig.7 2-cell NiCd or NiMH battery powered equipment with autonomous shut-down at low battery voltage. 2002 Jun 06 15 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS handbook, full pagewidth TEA1201TS DC/DC DOWNCONVERTER Vout_dcdc SWITCH Vout_switched LOW BATTERY DETECTOR low-batt Equivalent block diagram UPOUT/DNIN 1 4 3 C1 R lim ILIM U/D 16 Vref R9 R1 low-batt SYNC/PWM SHDWN0 C2 15 FB0 9 11 R2 TEA1201TS C5 LBO Vout_dcdc D1 12 LBI1 L1 LX2 5 R8 R7 LX1 6 OUT1 10 7 FB1 14 2 8 13 GND GND0 MGW792 Fig.8 3-cell NiCd or NiMH and 1-cell Li-Ion battery powered equipment. 2002 Jun 06 Vout_switched 16 switch_on Philips Semiconductors Product specification 0.95 V starting basic power unit 13.1 13.1.1 TEA1201TS 13.1.6 External component selection INDUCTOR L1 The maximum instantaneous current is set by the external resistor R10. The preferred type is SMD with 1% tolerance. The performance of the TEA1201TS is not very sensitive to inductance value. The best efficiency performance over a wide load current range is achieved by using an inductance of 6.8 µH for example TDK SLF7032 or Coilcraft DO1608 range. 13.1.2 The connection of resistor R10 differs for each mode: • At upconversion: resistor R10 must be connected between pins ILIM and UPOUT/DNIN; the current 320 limiting level is defined by: I Iim = ----------R10 DC-TO-DC CONVERTER INPUT CAPACITOR C1 The value of C1 strongly depends on the type of input source. In general, a 100 µF tantalum capacitor is sufficient. 13.1.3 • At downconversion: resistor R10 must be connected between pins ILIM and GND0; the current limiting level 300 is defined by: I Iim = ----------R10 DC-TO-DC CONVERTER OUTPUT CAPACITOR C2 The average inductor current during limited current operation also depends on the inductance value, input voltage, output voltage and resistive losses in all components in the power path. Ensure that Ilim < Isat (saturation current) of the inductor. The value and type of C2 depends on the maximum output current and the ripple voltage which is allowed in the application. Low-ESR tantalum capacitors show good results. The most important specification of C2 is its ESR, which mainly determines output voltage ripple. 13.1.4 CURRENT LIMITING RESISTOR R10 13.1.7 DIODE D1 REFERENCE VOLTAGE DECOUPLING CAPACITOR C5 The Schottky diode is only used for a short time during takeover from N-type power MOSFET and P-type power MOSFET and vice versa. Therefore, a medium-power diode is sufficient in most applications, for example a Philips PRLL5819. Optionally, a decoupling capacitor can be connected between pin Vref and ground in order to achieve a lower noise level of the output voltages of the LDO. The best choice for C5 is a ceramic multilayer capacitor of approximately 10 nF. 13.1.5 13.1.8 FEEDBACK RESISTORS R1 AND R2 The output voltage of the DC-to-DC converter is determined by the resistors R1 and R2. The following conditions apply: LOW BATTERY DETECTOR COMPONENTS R7, R8 AND R9 Resistor R7 is connected between pin LBO and the input or output pin and must be 330 kΩ or higher. • Use SMD type resistors only with a tolerance of 1%. If larger body resistors are used, the capacitance on pin FB0 will be too large, causing inaccurate operation. A 1-cell NiCd or NiMH battery can be connected directly to pin LBI1. • Resistors R1 and R2 should have a maximum value of 50 kΩ when connected in parallel. A higher value will result in inaccurate operation. A higher battery voltage can be detected by application of a divider circuit with resistors R8 and R9. The low-battery detection level for a higher battery voltage can be set by using the formula: Under these conditions, the output voltage can be calculated by the formula: R9 V LBI1(det) = V det × ---------------------- R8 + R9 R1 V O = V ref × 1 + -------- R2 Since current flows into the LBI1 pin, the parallel impedance of R8 and R9 must be about 1 kΩ in order to avoid inaccuracy due to the spread of the LBI1 current. 2002 Jun 06 17 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS MGU577 100 handbook, full pagewidth η (1) (%) (2) 80 60 40 1 10 2 10 10 3 IL (mA) (1) VI = 2.4 V (2) VI = 1.2 V VO = 3.5 V Fig.9 Efficiency as a function of load current. 2002 Jun 06 18 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS 14 PACKAGE OUTLINE SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm D SOT369-1 E A X c y HE v M A Z 9 16 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 8 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0.00 1.4 1.2 0.25 0.32 0.20 0.25 0.13 5.30 5.10 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT369-1 2002 Jun 06 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 99-12-27 MO-152 19 o Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS If wave soldering is used the following conditions must be observed for optimal results: 15 SOLDERING 15.1 Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. 15.2 – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages. 15.3 15.4 Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. To overcome these problems the double-wave soldering method was specifically developed. 2002 Jun 06 Manual soldering 20 Philips Semiconductors Product specification 0.95 V starting basic power unit 15.5 TEA1201TS Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable(2) HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not PLCC(3), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO REFLOW(1) suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2002 Jun 06 21 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS 16 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 17 DEFINITIONS 18 DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jun 06 22 Philips Semiconductors Product specification 0.95 V starting basic power unit TEA1201TS NOTES 2002 Jun 06 23 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 403502/01/pp24 Date of release: 2002 Jun 06 Document order number: 9397 750 09359