Document No. 001-88013 Rev. *C ECN #: 4417735 Cypress Semiconductor Product Qualification Report QTP# 064302 VERSION*C June, 2014 XO LN FLEXO DEVICE FAMILY L8C-3R TECHNOLOGY, FAB 4 CY2VC521 Low Noise LVDS Clock Generator with VCXO CY2VC511 27 MHZ Clock Generator with VCXO CY2XP01 Fibre Channel Crystal to LVPECL Clock Generator CY2XP11 CY2XP21 106.25MHz / 100MHz Crystal to LVPECL Clock Generator 125 MHZ LVPECL Clock Generator CY2XP22/24/41/51 Crystal to LVPECL Clock Generator CY2XP31 CY2XP81 312.5 MHZ LVPECL Clock Generator CY2XP91 Crystal to LVPECL Clock Generator with Frequency Margining – Pin Control CY2XL01 Fibre Channel Crystal to LVDS Clock Generator CY2XL11 100 MHZ LVDS Clock Generator CY2XL22/23/31/51 Crystal to LVDS Clock Generator CY2XL71 Sata/SAS Crystal to LVDS Clock Generator CY2X013 LVDS Crystal Oscillator (XO) CY2X012 Low Jitter Crystal Oscillator CY2X014 Low Jitter LVPECL Crystal Oscillator Crystal to LVPECL Clock Generator with Frequency Margining – I2C Control Company Confidential A printed copy of this document is considered uncontrolled. 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Page 1 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 XO LN FLEXO DEVICE FAMILY L8C-3R TECHNOLOGY, FAB 4 CY2XF23 High Performance LVDS Oscillator With Frequency Margining - I2C Control CY2XF24 High Performance LVPECL Oscillator With Frequency Margining - I2C Control CY2XF32 High Performance CMOS Oscillator With Frequency Margining - Pin Control CY2XF33 High Performance LVDS Oscillator With Frequency Margining - Pin Control CY2XF34 High Performance LVPECL Oscillator With Frequency Margining - Pin Control CY2V014 LVPECL Voltage Controlled Crystal Oscillator (VCXO) CY2V013 Low Jitter LVDS Voltage Controlled Crystal Oscillator CY2V012 Voltage Controlled Crystal Oscillator CY2XP61 125 MHZ LVPECL Clock Generator CY2X0147 Low jitter LVPECL crystal oscillator CY2X0137 High performance LVDS crystal oscillator CY2XF327 High performance CMOS crystal oscillator FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 042106 7C82877A DDR2 PLL New Device family on New C8Q-3R Technology, Fab4 Jan 05 053301 Qualify L8C-3R Technology Derivative of the C8 Technology at Fab4 using CY5077 Device Sep 06 064302 Qualify XO LN Flexo Product Family on L8C-3R process at Fab4 Jun 09 091601 Qualification of Flexo LN CG PKG Derivatives (7C851012A & 7C851202A) in L8C-3R process at CMI Qualification of 7C851203A and 7C851204A Bond Option of Flexo Device Jul 09 093101 Aug 09 092803 Qualification of 4-Layer Minor Design Change on Flexo Device 7C85100A/ 110A/120A L8C-3R fabricated in Fab4 120105 Qualification of 24L QFN new package option of 7C851300A FLEXO Die (7C85120A, base June 13 die: 7C85100A), L8C-3R Technology in Fab 4. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 23 Sep 09 Document No. 001-88013 Rev. *C ECN #: 4417735 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify XO LN Flexo Product Family on L8C-3R process at Fab4 Marketing Part #: CY2VC521xx, CY2VC511xx, CY2XP01xx, CY2XP11xx, CY2XP21xx, CY2XP22xx, CY2XP24xx, CY2XP31xx, CY2XP41xx, CY2XP51xx, CY2XP81xx, CY2XP91xx, CY2XL01xx, CY2XL11xx, CY2XL22xx, CY2XL23xx, CY2XL31xx, CY2XL51xx, CY2XL71xx, CY2X013xx, CY2X012xx, CY2X014xx, CY2XF23xx, CY2XF24xx, CY2XF32xx, CY2XF33xx, CY2XF34xx, CY2V014xx, CY2V013xx, CY2V012xx, CY2XP61xx, CY2X0147xx, CY2X0137xx, CY2XF327xx Device Description: Low Noise XO/VCXO/VCO Crystal Oscillator and Clock Generator Cypress Division: Cypress Semiconductor Corporation – MPD TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 100A Ti/3,200A Al /300A TiW Metal 2: 150A Ti/4,230A Al /300A TiW Metal 3: 150A Ti/4,230A Al /300A TiW Metal 4: 150A Ti/8,000A Al /300A TiW TEOS 1,000A / 7,000A Si3N4 Passivation Type and Thickness: Generic Process Technology/Design Rule (µdrawn): CMOS, 0.13 µm Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55A Name/Location of Die Fab (prime) Facility: CMI / Bloomington MN Die Fab Line ID/Wafer Process ID: Fab4, L8C-3R PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 16-Pin TSSOP CML-RA 8-Pin TSSOP OSE-TAIWAN 6-Pin (5x3.2mm/5x7mm) / 4-Pin LCC ECERA-TAIWAN 24-Pin QFN ASE-TAIWAN Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Mold Compound Name/Manufacturer: ZZ16, ZZ08 16-Lead Thin Shrunk Small Outline Package (TSSOP) 8-Lead Thin Shrunk Small Outline Package (TSSOP) CEL 9200 / Hitachi, CEL 9200HF / Hitachi Mold Compound Flammability Rating: UL-94 V-0 Mold Compound Alpha Emission Rate N/A Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel , Hitachi Die Attach Material: QMI 509, 4900G Die Attach Method: Epoxy Bond Diagram Designation: 001-13744 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil, Au, 1.2mil Thermal Resistance Theta JA °C/W: 117°C/W, 135°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 11-20028, 001-04375 Name/Location of Assembly (prime) facility: CML-RA, OSE-T MSL Level 3 Reflow Profile 260C Package Outline, Type, or Name: ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Fault Coverage KYEC,Taiwan, CML-RA 100% Note: Please contact a Cypress Representative for other packages availability. 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Page 5 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: LZ04, LZ06 4 - Leadless Chip Carrier (LCC) 6 – Leadless Chip Carrier (LCC) N/A N/A Oxygen Rating Index: N/A Lead Frame Material: N/A Lead Finish, Composition / Thickness: Ni / Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Threebond Die Attach Material: 3301F Die Attach Method: Epoxy Bond Diagram Designation: 001-14533 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 66°C/W / 62 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-07965 Name/Location of Assembly (prime) facility: eCERA MSL Level N/A Reflow Profile N/A Package Outline, Type, or Name: ELECTRICAL TEST / FINISH DESCRIPTION Test Location: eCERA Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Long Life Verification Low Temperature Operating Life High Temperature Steady State life High Accelerated Saturation Test (HAST) Temperature Cycle Pressure Cooker Dynamic Operating Condition, Vcc Max=3.8V, 125°C Dynamic Operating Condition, Vcc Max=2.35V, 150°C Dynamic Operating Condition, Vcc Max=2.35V, 125°C Dynamic Operating Condition, Vcc Max=3.96V, 125°C JESD22-A108 Dynamic Operating Condition, Vcc Max=3.8V, 125°C Dynamic Operating Condition, Vcc Max=2.35V, 150°C Dynamic Operating Condition, Vcc Max=2.35V, 125°C JESD22-A108 Dynamic Operating Condition, Vcc Max=2.35V, 150°C JESD22-A108 Dynamic Operating Condition, Vcc = 4.3V, -30 C, f = 4MHz JESD22-A108 Static Operating Condition,125°C, 2.35V/3.63V, Vcc Max JESD22-A108 JEDEC STD 22-A110: 130°C, 85%RH, 1.8V/2.35V/3.63V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) JESD22-A102, 121°C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) Result P/F P P P P P P P P Electrostatic Discharge Human Body Model (ESD-HBM) 2200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Human Body Model (ESD-HBM) 2200V JESD22, Method A114 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Ball Shear JESD22-B116, Cpk : 1.33, Ppk : 1.66 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) P Dynamic Latch-up 6.9V, In accordance with JESD78 P High Temperature Storage JESD22-A103:150, no bias P Latch up Sensitivity 125C, ± 200mA/300mA, In accordance with JESD78 85C, ± 140mA/180mA, In accordance with JESD78 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 RELIABILITY FAILURE RATE SUMMARY Stress/Test 3 Device Tested/ Device Hours # Fails Activation Energy Thermal A.F Failure Rate 3837 Devices 0 N/A N/A 0 PPM 1,2 180,000 DHRs 0 0 .7 170 1,2 860,000 DHRs 0 0.7 55 High Temperature Operating Life 1 Early Failure Rate High Temperature Operating Life Long Term Failure Rate (150C) High Temperature Operating Life 12 FIT Long Term Failure Rate (125C) 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 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Page 8 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 042106 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 17 0 CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G COMP 16 0 CY68013A (7C681000A) 610434407/8 TAIWN-G COMP 17 0 H20549 TAIWN-G COMP 16 0 4416701 CY2SSTU877 (7C87740A) 4417143 STRESS: AGE BOND STRENGTH CY68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 H20549 TAIWN-G COMP 3 0 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 STRESS: BALL SHEAR CY68013A (7C682001A) 4416701 STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY68013A (7C682001A) 4416701 610437657 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 H20549 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 9 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 042106 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 CY68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 042106 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY68013A (7C682005A) 4416701 610438121 TAIWN-G 500 80 0 STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY68013A (7C682001A) 4416666 610437607 TAIWN-G STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA) CY68013A (7C682001A) 4416701 610437657 TAIWN-G STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 042106 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 (CONTINUATION) CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 053301 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 16 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 15 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 15 0 COMP 2 0 COMP 2 0 STRESS: DYNAMIC LATCH-UP, 5.0V CY5077 (7C850003A) STRESS: DYNAMIC LATCH-UP, 6.25V CY5077 (7C850003A) STRESS: ESD-CHARGE DEVICE MODEL (500V) CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 9 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 9 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 9 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 9 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 3 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 3 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.35V, Vcc Max) CY5077 (7C850003A) 4538565 610555083 CML-RA 48 519 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 48 1061 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 48 500 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.35V) CY5077 (7C850003A) 4538565 610555083 CML-RA 80 79 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 168 79 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 13 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 053301 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.35V, Vcc Max) CY5077 (7C850003A) 4538565 610555083 CML-RA 80 120 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 500 120 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 80 120 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 120 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 80 120 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 500 120 0 1000 119 0 STRESS: LONG LIFE VERIFICATION TEST (150C, 2.35V, Vcc Max) CY5077 (7C850003A) 4538565 610555083 CML-RA STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 2.35V), PRE COND 192 HR, 30C/60%RH, MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA 128 48 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 128 48 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 256 47 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 1000 50 0 STRESS: STATIC LATCH-UP TESTING (125C, 3.0V, ±200mA), 1.8V Option CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 3 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±200mA), 3.3V Option CY5077 (7C850003A) 4538565 610555083 CML-RA STRESS: STATIC LATCH-UP TESTING (125C, 5.4V, ±200mA), 3.3V Option CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 053301 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA 300 50 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 500 50 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 1000 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 300 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 1000 50 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 300 49 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 500 49 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 064302 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej COMP 9 0 Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL (500V) CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA CY2X012FLX (7C851001A) 4843328 610853236 ER COMP 9 0 CY2V0122FLXC (7C851003A) 4843328 610853238 ER COMP 9 0 CY2V013FLXI (7C851004A) 4843328 610853239 ER COMP 9 0 CY2X014FLXC (7C851002A) 4843328 610853237 ER COMP 9 0 CY2VC521ZXC-2 (7C851101A) 4903174 610906515/16 ER COMP 9 0 CY2VC511ZXC (7C851100A) 4903174 610906511/12/13 ER COMP 9 0 CY2XP31ZXI (7C851200A) 4903174 610908073/75/77 T-Taiwan COMP 9 0 CY2XL11ZXC (7C851201A) 4903174 610908081/82/83 T-Taiwan COMP 9 0 CY2X014FLXC (7C851002A) 4903174 610906619 ER COMP 9 0 CY2V013FLXI (7C851004A) 4903174 610906625 ER COMP 9 0 CY2V012FLXI (7C851003A) 4903174 610906623 ER COMP 9 0 CY2X012FLXC (7C851001A) 4903174 610906621 ER COMP 9 0 CY2VC511ZXC (7C851100A) 4803399 610820266/265/263 CML-RA COMP 9 0 CY2VC511ZXC (7C851001A) 4803399 610818852 ER COMP 9 0 CY2X014FLXCT (7C851002A) 4803399 610818855 ER COMP 9 0 CY2V012FLXCT (7C851003A) 4803399 610818854 ER COMP 9 0 CY2V013FLXIT (7C851004A) 4803399 610818851 ER COMP 9 0 CY2XP31ZXC (7C851010A) 4803399 610818851 ER COMP 9 0 COMP 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA CY2X012FLX (7C851001A) 4843328 610853236 ER COMP 8 0 CY2V0122FLXC (7C851003A) 4843328 610853238 ER COMP 8 0 CY2V013FLXI (7C851004A) 4843328 610853239 ER COMP 8 0 CY2X014FLXC (7C851002A) 4843328 610853237 ER COMP 8 0 CY2VC521ZXC-2 (7C851101A) 4903174 610906515/16 ER COMP 8 0 CY2VC511ZXC (7C851100A) 4903174 610906511/12/13 ER COMP 8 0 CY2XP31ZXI (7C851200A) 4903174 610908073/75/77 T-Taiwan COMP 8 0 CY2XL11ZXC (7C851201A) 4903174 610908081/82/83 T-Taiwan COMP 8 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 064302 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V (CONTINUATION) CY2X014FLXC (7C851002A) 4903174 610906619 ER COMP 8 0 CY2V013FLXI (7C851004A) 4903174 610906625 ER COMP 8 0 CY2V012FLXI (7C851003A) 4903174 610906623 ER COMP 8 0 CY2X012FLXC (7C851001A) 4903174 610906621 ER COMP 8 0 CY2VC511ZXC (7C851100A) 4803399 610820266/265/263 CML-RA COMP 8 0 CY2VC511ZXC (7C851001A) 4803399 610818852 ER COMP 8 0 CY2X014FLXCT (7C851002A) 4803399 610818855 ER COMP 8 0 CY2V012FLXCT (7C851003A) 4803399 610818854 ER COMP 8 0 CY2V013FLXIT (7C851004A) 4803399 610818851 ER COMP 8 0 CY2XP31ZXC (7C851010A) 4803399 610818851 ER COMP 8 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 2.35V, Vcc Max) CY2FLEXO-LV (7C851009A) 4903174 610906225/28/33 CML-R 168 624 0 CY2FLEXO-LV (7C851009A) 4903174 610906225/28/33 CML-R 1000 624 0 CY2FLEXO-LV (7C851009A) 4803399 610818721/715/705 CML-R 168 120 0 CY2FLEXO-LV (7C851009A) 4803399 610818721/715/705 CML-R 1000 120 0 CY2FLEXO-LV (7C851009A) 4843328 610853381/9/4 CML-R 168 116 0 CY2FLEXO-LV (7C851009A) 4843328 610853381/9/4 CML-R 1000 116 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2FLEXO-LV (7C851009A) 4903174 610906225/28/33 CML-R 96 1500 0 CY2FLEXO-LV (7C851009A) 4803399 610818721/715/705 CML-R 96 1006 0 CY2FLEXO-LV (7C851009A) 4843328 610853381/9/4 CML-R 96 1238 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.96V, Vcc Max) CY2FLEXO-HV (7C851010A) 4903174 610906226 CML-R 96 48 0 CY2FLEXO-HV (7C851010A) 4843328 610853387/85/80 CML-R 96 45 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 168 80 0 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 288 72 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 064302 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej COMP 6 0 Failure Mechanism STRESS: STATIC LATCH-UP TESTING (125C, ±200mA) CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA CY2X012FLX (7C851001A) 4843328 610853236 ER COMP 6 0 CY2V0122FLXC (7C851003A) 4843328 610853238 ER COMP 6 0 CY2V013FLXI (7C851004A) 4843328 610853239 ER COMP 6 0 CY2X014FLXC (7C851002A) 4843328 610853237 ER COMP 6 0 CY2VC521ZXC-2 (7C851101A) 4903174 610906515/16 ER COMP 6 0 CY2VC511ZXC (7C851100A) 4903174 610906511/12/13 ER COMP 6 0 CY2XP31ZXI (7C851200A) 4903174 610908073/75/77 T-Taiwan COMP 6 0 CY2XL11ZXC (7C851201A) 4903174 610908081/82/83 T-Taiwan COMP 6 0 CY2X014FLXC (7C851002A) 4903174 610906619 ER COMP 6 0 CY2V013FLXI (7C851004A) 4903174 610906625 ER COMP 6 0 CY2V012FLXI (7C851003A) 4903174 610906623 ER COMP 6 0 CY2X012FLXC (7C851001A) 4903174 610906621 ER COMP 6 0 CY2VC511ZXC (7C851100A) 4803399 610820266/265/263 CML-RA COMP 6 0 CY2VC511ZXC (7C851001A) 4803399 610818852 ER COMP 6 0 CY2X014FLXCT (7C851002A) 4803399 610818855 ER COMP 6 0 CY2V012FLXCT (7C851003A) 4803399 610818854 ER COMP 6 0 CY2V013FLXIT (7C851004A) 4803399 610818851 ER COMP 6 0 CY2XP31ZXC (7C851010A) 4803399 610818851 ER COMP 6 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 300 80 0 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 500 80 0 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 1000 80 0 CY2VC521ZXC (7C851101AC) 4803399 610820272/270/271 CML-RA 1500 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 18 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: 091601 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY2VC831ZXC (7C851012A) 4903174 610911034/5/6 CML-RA COMP 8 0 CY2XP91FZXC (7C851202A) 4903174 610911031/2/3 CML-RA COMP 8 0 STRESS: STATIC LATCH-UP TESTING (125C, ±200mA) CY2VC831ZXC (7C851012A) 4903174 610911034/5/6 CML-RA COMP 6 0 CY2XP91FZXC (7C851202A) 4903174 610911031/2/3 CML-RA COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 19 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 093101 Assy Loc Duration Samp Rej ESD-CHARGE DEVICE MODEL (500V) CY2XP31ZXC (7C851203A) 4903174 610920081 TAIWAN-T COMP 9 0 CY2XL11ZXC (7C851204A) 4903174 610919761 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY2XP31ZXC (7C851203A) 4903174 610920081 TAIWAN-T COMP 8 0 CY2XL11ZXC (7C851204A) 4903174 610919761 TAIWAN-T COMP 8 0 STRESS: Failure Mechanism STATIC LATCH-UP TESTING (125C, ±200mA) CY2XP31ZXC (7C851203A) 4903174 610920081 TAIWAN-T COMP 6 0 CY2XL11ZXC (7C851204A) 4903174 610919761 TAIWAN-T COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 20 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 092803 Assy Loc Duration Samp Rej Failure Mechanism E-TEST CY2X012FLXI (7C85100A) 4917670 N/A N/A COMP COMPARABLE 4917670 N/A N/A COMP COMPARABLE STRESS: SORT YIELD CY2X012FLXI (7C85100A) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 21 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Reliability Test Data QTP #: Device STRESS: Fab Lot # Duration Samp Rej TAIWAN-G COMP 9 0 TAIWAN-G COMP 8 0 TAIWAN-G COMP 6 0 Failure Mechanism 4119570 611205893 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V CY2XP61LQXI (7C851300A) STRESS: 120105 Assy Loc ESD-CHARGE DEVICE MODEL (500V) CY2XP61LQXI (7C851300A) STRESS: Assy Lot # 4119570 611205893 STATIC LATCH-UP TESTING (85C, ±140mA) CY2XP61LQXI (7C851300A) 4119570 611205893 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 22 of 23 Document No. 001-88013 Rev. *C ECN #: 4417735 Document History Page Document Title: QTP # 064302 : XO LN FLEXO DEVICE FAMILY (LOW NOISE XO/VCXO/VCO CRYSTAL OSCILLATOR AND CLOCK GENERATOR), L8C-3R TECHNOLOGY, FAB 4 001-88013 Document Number: Rev. ECN Orig. of No. Change ** 4033666 ILZ *A 4048909 NSR *B 4151939 HSTO *C 4417735 JYF Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-951 is not in spec format. Initiated spec for QTP 064302 and all data from Memo HGA-951 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Added CY2XP61 device and QTP#120105 data. Changed MID to MPD Added 24-Pin QFN package option and ASE-TAIWAN for its assembly site. Fixed page alignment, font format and data alignment. Added Document Number in the document history page. Added device CY2X0147, CY2X0137 & CY2XF327 in the cover page and marketing part# in MMNH-91. Update Package Availability table Sunset Review: Updated QTP title page; Updated Reliability Tests Performed table: - Added industry standard of EFR/LFR,LLV,LTOL,HTSSL,HTS, HAST,PCT - Added preconditioning step in Acoustic Microscopy Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 23 of 23