QTP # 064302 :XO LN FLEXO DEVICE FAMILY (LOW NOISE XO/VCXO/VCO CRYSTAL OSCILLATOR AND CLOCK GENERATOR), L8C-3R TECHNOLOGY, FAB 4

Document No. 001-88013 Rev. *C
ECN #: 4417735
Cypress Semiconductor
Product Qualification Report
QTP# 064302 VERSION*C
June, 2014
XO LN FLEXO DEVICE FAMILY
L8C-3R TECHNOLOGY, FAB 4
CY2VC521
Low Noise LVDS Clock Generator with VCXO
CY2VC511
27 MHZ Clock Generator with VCXO
CY2XP01
Fibre Channel Crystal to LVPECL Clock Generator
CY2XP11
CY2XP21
106.25MHz / 100MHz Crystal to LVPECL Clock Generator
125 MHZ LVPECL Clock Generator
CY2XP22/24/41/51
Crystal to LVPECL Clock Generator
CY2XP31
CY2XP81
312.5 MHZ LVPECL Clock Generator
CY2XP91
Crystal to LVPECL Clock Generator with Frequency Margining – Pin Control
CY2XL01
Fibre Channel Crystal to LVDS Clock Generator
CY2XL11
100 MHZ LVDS Clock Generator
CY2XL22/23/31/51
Crystal to LVDS Clock Generator
CY2XL71
Sata/SAS Crystal to LVDS Clock Generator
CY2X013
LVDS Crystal Oscillator (XO)
CY2X012
Low Jitter Crystal Oscillator
CY2X014
Low Jitter LVPECL Crystal Oscillator
Crystal to LVPECL Clock Generator with Frequency Margining – I2C Control
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Page 1 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
XO LN FLEXO DEVICE FAMILY
L8C-3R TECHNOLOGY, FAB 4
CY2XF23
High Performance LVDS Oscillator With Frequency Margining - I2C Control
CY2XF24
High Performance LVPECL Oscillator With Frequency Margining - I2C Control
CY2XF32
High Performance CMOS Oscillator With Frequency Margining - Pin Control
CY2XF33
High Performance LVDS Oscillator With Frequency Margining - Pin Control
CY2XF34
High Performance LVPECL Oscillator With Frequency Margining - Pin Control
CY2V014
LVPECL Voltage Controlled Crystal Oscillator (VCXO)
CY2V013
Low Jitter LVDS Voltage Controlled Crystal Oscillator
CY2V012
Voltage Controlled Crystal Oscillator
CY2XP61
125 MHZ LVPECL Clock Generator
CY2X0147
Low jitter LVPECL crystal oscillator
CY2X0137
High performance LVDS crystal oscillator
CY2XF327
High performance CMOS crystal oscillator
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
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Page 2 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
PRODUCT QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
042106
7C82877A DDR2 PLL New Device family on New C8Q-3R Technology, Fab4
Jan 05
053301
Qualify L8C-3R Technology Derivative of the C8 Technology at Fab4 using CY5077
Device
Sep 06
064302
Qualify XO LN Flexo Product Family on L8C-3R process at Fab4
Jun 09
091601
Qualification of Flexo LN CG PKG Derivatives (7C851012A & 7C851202A) in L8C-3R
process at CMI
Qualification of 7C851203A and 7C851204A Bond Option of Flexo Device
Jul 09
093101
Aug 09
092803
Qualification of 4-Layer Minor Design Change on Flexo Device 7C85100A/ 110A/120A
L8C-3R fabricated in Fab4
120105
Qualification of 24L QFN new package option of 7C851300A FLEXO Die (7C85120A, base
June 13
die: 7C85100A), L8C-3R Technology in Fab 4.
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Page 3 of 23
Sep 09
Document No. 001-88013 Rev. *C
ECN #: 4417735
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify XO LN Flexo Product Family on L8C-3R process at Fab4
Marketing Part #:
CY2VC521xx, CY2VC511xx, CY2XP01xx, CY2XP11xx, CY2XP21xx, CY2XP22xx,
CY2XP24xx, CY2XP31xx, CY2XP41xx, CY2XP51xx, CY2XP81xx, CY2XP91xx,
CY2XL01xx, CY2XL11xx, CY2XL22xx, CY2XL23xx, CY2XL31xx, CY2XL51xx,
CY2XL71xx, CY2X013xx, CY2X012xx, CY2X014xx, CY2XF23xx, CY2XF24xx,
CY2XF32xx, CY2XF33xx, CY2XF34xx, CY2V014xx, CY2V013xx, CY2V012xx,
CY2XP61xx, CY2X0147xx, CY2X0137xx, CY2XF327xx
Device Description:
Low Noise XO/VCXO/VCO Crystal Oscillator and Clock Generator
Cypress Division:
Cypress Semiconductor Corporation – MPD
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
4
Metal Composition:
Metal 1: 100A Ti/3,200A Al /300A TiW
Metal 2: 150A Ti/4,230A Al /300A TiW
Metal 3: 150A Ti/4,230A Al /300A TiW
Metal 4: 150A Ti/8,000A Al /300A TiW
TEOS 1,000A / 7,000A Si3N4
Passivation Type and Thickness:
Generic Process Technology/Design Rule (µdrawn):
CMOS, 0.13 µm
Gate Oxide Material/Thickness (MOS):
SiO2 DGOX 32/55A
Name/Location of Die Fab (prime) Facility:
CMI / Bloomington MN
Die Fab Line ID/Wafer Process ID:
Fab4, L8C-3R
PACKAGE AVAILABILITY
ASSEMBLY FACILITY SITE
PACKAGE
16-Pin TSSOP
CML-RA
8-Pin TSSOP
OSE-TAIWAN
6-Pin (5x3.2mm/5x7mm) /
4-Pin LCC
ECERA-TAIWAN
24-Pin QFN
ASE-TAIWAN
Company Confidential
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Page 4 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Mold Compound Name/Manufacturer:
ZZ16, ZZ08
16-Lead Thin Shrunk Small Outline Package (TSSOP)
8-Lead Thin Shrunk Small Outline Package (TSSOP)
CEL 9200 / Hitachi, CEL 9200HF / Hitachi
Mold Compound Flammability Rating:
UL-94 V-0
Mold Compound Alpha Emission Rate
N/A
Oxygen Rating Index:
N/A
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Henkel , Hitachi
Die Attach Material:
QMI 509, 4900G
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-13744
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil, Au, 1.2mil
Thermal Resistance Theta JA °C/W:
117°C/W, 135°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
11-20028, 001-04375
Name/Location of Assembly (prime) facility:
CML-RA, OSE-T
MSL Level
3
Reflow Profile
260C
Package Outline, Type, or Name:
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Fault Coverage
KYEC,Taiwan, CML-RA
100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 5 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
LZ04, LZ06
4 - Leadless Chip Carrier (LCC)
6 – Leadless Chip Carrier (LCC)
N/A
N/A
Oxygen Rating Index:
N/A
Lead Frame Material:
N/A
Lead Finish, Composition / Thickness:
Ni / Au
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Threebond
Die Attach Material:
3301F
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-14533
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0mil
Thermal Resistance Theta JA °C/W:
66°C/W / 62 °C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-07965
Name/Location of Assembly (prime) facility:
eCERA
MSL Level
N/A
Reflow Profile
N/A
Package Outline, Type, or Name:
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
eCERA
Fault Coverage:
100%
Company Confidential
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Page 6 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
Long Life Verification
Low Temperature Operating Life
High Temperature Steady State life
High Accelerated Saturation Test
(HAST)
Temperature Cycle
Pressure Cooker
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
Dynamic Operating Condition, Vcc Max=2.35V, 150°C
Dynamic Operating Condition, Vcc Max=2.35V, 125°C
Dynamic Operating Condition, Vcc Max=3.96V, 125°C
JESD22-A108
Dynamic Operating Condition, Vcc Max=3.8V, 125°C
Dynamic Operating Condition, Vcc Max=2.35V, 150°C
Dynamic Operating Condition, Vcc Max=2.35V, 125°C
JESD22-A108
Dynamic Operating Condition, Vcc Max=2.35V, 150°C
JESD22-A108
Dynamic Operating Condition, Vcc = 4.3V, -30 C, f = 4MHz
JESD22-A108
Static Operating Condition,125°C, 2.35V/3.63V, Vcc Max
JESD22-A108
JEDEC STD 22-A110: 130°C, 85%RH, 1.8V/2.35V/3.63V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
JESD22-A102, 121°C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
Result
P/F
P
P
P
P
P
P
P
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2200V
MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2200V
JESD22, Method A114
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V, JESD22-C101
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Ball Shear
JESD22-B116, Cpk : 1.33, Ppk : 1.66
P
Acoustic Microscopy
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
P
Dynamic Latch-up
6.9V, In accordance with JESD78
P
High Temperature Storage
JESD22-A103:150, no bias
P
Latch up Sensitivity
125C, ± 200mA/300mA, In accordance with JESD78
85C, ± 140mA/180mA, In accordance with JESD78
P
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Page 7 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
A.F
Failure
Rate
3837 Devices
0
N/A
N/A
0 PPM
1,2
180,000 DHRs
0
0 .7
170
1,2
860,000 DHRs
0
0.7
55
High Temperature Operating Life
1
Early Failure Rate
High Temperature Operating Life
Long Term Failure Rate (150C)
High Temperature Operating Life
12 FIT
Long Term Failure Rate (125C)
1
2
3
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann's constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
Company Confidential
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Page 8 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 042106
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC-MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
17
0
CY2SSTU877 (7C87741A) 4416666B
H20592
TAIWN-G
COMP
16
0
CY68013A (7C681000A)
610434407/8
TAIWN-G
COMP
17
0
H20549
TAIWN-G
COMP
16
0
4416701
CY2SSTU877 (7C87740A) 4417143
STRESS: AGE BOND STRENGTH
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
COMP
5
0
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
COMP
5
0
H20549
TAIWN-G
COMP
3
0
610437657
TAIWN-G
COMP
5
0
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A) 4417143
STRESS: BALL SHEAR
CY68013A (7C682001A)
4416701
STRESS: DYNAMIC LATCH-UP TESTING (6.9V)
CY68013A (7C682001A)
4416701
610437657
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416666
610437102
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
COMP
9
0
H20549
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A) 4417143
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
9
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
9
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
COMP
9
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
COMP
3
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
COMP
3
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
COMP
3
0
Company Confidential
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Page 9 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 042106
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
80
80
0
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
168
80
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
96
499
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
96
514
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
168
200
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
1000
194
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
168
208
0
CY68013A (7C682005A)
4417143
610443845
TAIWN-G
1000
208
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max)
CY2SSTU877 (7C87741A) 4416666B
H20592
TAIWN-G
96
276
0
CY2SSTU877 (7C82877A) 4416701
H20501
TAIWN-G
96
126
0
CY2SSTU877 (7C87741A) 4416701
H20500
TAIWN-G
96
89
0
CY2SSTU877 (7C87740A) 4416791B
H20536
TAIWN-G
96
169
0
CY2SSTU877 (7C87741A) 4417975
H20583
TAIWN-G
96
304
0
CY2SSTU877 (7C87741A) 4419587
H20650
TAIWN-G
96
500
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CY2SSTU877 (7C87741A) 4416666B
H20592
TAIWN-G
1000
253
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
168
150
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
1000
150
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
128
47
0
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
256
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
128
47
0
CY68013A (7C682000A)
4416701
610437702
TAIWN-G
256
45
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3
CY2SSTU877 (7C87741A) 4417975
H20583
TAIWN-G
128
43
0
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Page 10 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 042106
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V)
CY68013A (7C682005A)
4416701
610438121
TAIWN-G
500
80
0
STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA)
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
COMP
3
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
COMP
3
0
COMP
3
0
COMP
3
0
STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA)
CY68013A (7C682001A)
4416666
610437607
TAIWN-G
STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA)
CY68013A (7C682001A)
4416701
610437657
TAIWN-G
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
288
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
288
50
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
168
47
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
288
47
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
168
45
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
288
45
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
300
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416666
610434406
TAIWN-G
1000
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
168
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
300
46
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
500
45
0
CY2SSTU877 (7C82877A) 4413035
H19747
TAIWN-G
1000
45
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
300
45
0
Company Confidential
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Page 11 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 042106
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 (CONTINUATION)
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
1000
45
0
STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
500
50
0
CY68013A (7C681000A)
4416701
610434407/8
TAIWN-G
1000
50
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
500
45
0
CY2SSTU877 (7C87740A) 4417143
H20549
TAIWN-G
1000
45
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 053301
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC-MSL3
CY5077 (7C850003A)
4538565
610555083
CML-RA
COMP
16
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
15
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
15
0
COMP
2
0
COMP
2
0
STRESS: DYNAMIC LATCH-UP, 5.0V
CY5077 (7C850003A)
STRESS: DYNAMIC LATCH-UP, 6.25V
CY5077 (7C850003A)
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CY5077 (7C850003A)
4538565
610555083
CML-RA
COMP
9
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
9
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY5077 (7C850003A)
4538565
610555083
CML-RA
COMP
9
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
9
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V
CY5077 (7C850003A)
4538565
610555083
CML-RA
COMP
3
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
3
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
3
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.35V, Vcc Max)
CY5077 (7C850003A)
4538565
610555083
CML-RA
48
519
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
48
1061
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
48
500
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.35V)
CY5077 (7C850003A)
4538565
610555083
CML-RA
80
79
0
CY5077 (7C850003A)
4538565
610555083
CML-RA
168
79
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 053301
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.35V, Vcc Max)
CY5077 (7C850003A)
4538565
610555083
CML-RA
80
120
0
CY5077 (7C850003A)
4538565
610555083
CML-RA
500
120
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
80
120
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
500
120
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
80
120
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
500
120
0
1000
119
0
STRESS: LONG LIFE VERIFICATION TEST (150C, 2.35V, Vcc Max)
CY5077 (7C850003A)
4538565
610555083
CML-RA
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 2.35V), PRE COND 192 HR, 30C/60%RH, MSL3
CY5077 (7C850003A)
4538565
610555083
CML-RA
128
48
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
128
48
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
256
47
0
STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
500
50
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
1000
50
0
STRESS: STATIC LATCH-UP TESTING (125C, 3.0V, ±200mA), 1.8V Option
CY5077 (7C850003A)
4538565
610555083
CML-RA
COMP
3
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
3
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
3
0
COMP
3
0
STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±200mA), 3.3V Option
CY5077 (7C850003A)
4538565
610555083
CML-RA
STRESS: STATIC LATCH-UP TESTING (125C, 5.4V, ±200mA), 3.3V Option
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
COMP
3
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
COMP
3
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 053301
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY5077 (7C850003A)
4538565
610555083
CML-RA
300
50
0
CY5077 (7C850003A)
4538565
610555083
CML-RA
500
50
0
CY5077 (7C850003A)
4538565
610555083
CML-RA
1000
50
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
300
50
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
500
50
0
CY5077 (7C850003A)
4550443
61033232/3/915 PHIL-M
1000
50
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
300
49
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
500
49
0
CY5077 (7C850003A)
4615715
610637084
PHIL-M
1000
48
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 064302
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
COMP
9
0
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
CY2X012FLX (7C851001A)
4843328
610853236
ER
COMP
9
0
CY2V0122FLXC (7C851003A)
4843328
610853238
ER
COMP
9
0
CY2V013FLXI (7C851004A)
4843328
610853239
ER
COMP
9
0
CY2X014FLXC (7C851002A)
4843328
610853237
ER
COMP
9
0
CY2VC521ZXC-2 (7C851101A)
4903174
610906515/16
ER
COMP
9
0
CY2VC511ZXC (7C851100A)
4903174
610906511/12/13
ER
COMP
9
0
CY2XP31ZXI (7C851200A)
4903174
610908073/75/77
T-Taiwan
COMP
9
0
CY2XL11ZXC (7C851201A)
4903174
610908081/82/83
T-Taiwan
COMP
9
0
CY2X014FLXC (7C851002A)
4903174
610906619
ER
COMP
9
0
CY2V013FLXI (7C851004A)
4903174
610906625
ER
COMP
9
0
CY2V012FLXI (7C851003A)
4903174
610906623
ER
COMP
9
0
CY2X012FLXC (7C851001A)
4903174
610906621
ER
COMP
9
0
CY2VC511ZXC (7C851100A)
4803399
610820266/265/263 CML-RA
COMP
9
0
CY2VC511ZXC (7C851001A)
4803399
610818852
ER
COMP
9
0
CY2X014FLXCT (7C851002A)
4803399
610818855
ER
COMP
9
0
CY2V012FLXCT (7C851003A)
4803399
610818854
ER
COMP
9
0
CY2V013FLXIT (7C851004A)
4803399
610818851
ER
COMP
9
0
CY2XP31ZXC (7C851010A)
4803399
610818851
ER
COMP
9
0
COMP
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
CY2X012FLX (7C851001A)
4843328
610853236
ER
COMP
8
0
CY2V0122FLXC (7C851003A)
4843328
610853238
ER
COMP
8
0
CY2V013FLXI (7C851004A)
4843328
610853239
ER
COMP
8
0
CY2X014FLXC (7C851002A)
4843328
610853237
ER
COMP
8
0
CY2VC521ZXC-2 (7C851101A)
4903174
610906515/16
ER
COMP
8
0
CY2VC511ZXC (7C851100A)
4903174
610906511/12/13
ER
COMP
8
0
CY2XP31ZXI (7C851200A)
4903174
610908073/75/77
T-Taiwan
COMP
8
0
CY2XL11ZXC (7C851201A)
4903174
610908081/82/83
T-Taiwan
COMP
8
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 064302
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V (CONTINUATION)
CY2X014FLXC (7C851002A)
4903174
610906619
ER
COMP
8
0
CY2V013FLXI (7C851004A)
4903174
610906625
ER
COMP
8
0
CY2V012FLXI (7C851003A)
4903174
610906623
ER
COMP
8
0
CY2X012FLXC (7C851001A)
4903174
610906621
ER
COMP
8
0
CY2VC511ZXC (7C851100A)
4803399
610820266/265/263 CML-RA
COMP
8
0
CY2VC511ZXC (7C851001A)
4803399
610818852
ER
COMP
8
0
CY2X014FLXCT (7C851002A)
4803399
610818855
ER
COMP
8
0
CY2V012FLXCT (7C851003A)
4803399
610818854
ER
COMP
8
0
CY2V013FLXIT (7C851004A)
4803399
610818851
ER
COMP
8
0
CY2XP31ZXC (7C851010A)
4803399
610818851
ER
COMP
8
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 2.35V, Vcc Max)
CY2FLEXO-LV (7C851009A)
4903174
610906225/28/33
CML-R
168
624
0
CY2FLEXO-LV (7C851009A)
4903174
610906225/28/33
CML-R
1000
624
0
CY2FLEXO-LV (7C851009A)
4803399
610818721/715/705
CML-R
168
120
0
CY2FLEXO-LV (7C851009A)
4803399
610818721/715/705
CML-R
1000
120
0
CY2FLEXO-LV (7C851009A)
4843328
610853381/9/4
CML-R
168
116
0
CY2FLEXO-LV (7C851009A)
4843328
610853381/9/4
CML-R
1000
116
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max)
CY2FLEXO-LV (7C851009A)
4903174
610906225/28/33
CML-R
96
1500
0
CY2FLEXO-LV (7C851009A)
4803399
610818721/715/705
CML-R
96
1006
0
CY2FLEXO-LV (7C851009A)
4843328
610853381/9/4
CML-R
96
1238
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.96V, Vcc Max)
CY2FLEXO-HV (7C851010A)
4903174
610906226
CML-R
96
48
0
CY2FLEXO-HV (7C851010A)
4843328
610853387/85/80
CML-R
96
45
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271
CML-RA
168
80
0
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271
CML-RA
288
72
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 064302
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
COMP
6
0
Failure Mechanism
STRESS: STATIC LATCH-UP TESTING (125C, ±200mA)
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
CY2X012FLX (7C851001A)
4843328
610853236
ER
COMP
6
0
CY2V0122FLXC (7C851003A)
4843328
610853238
ER
COMP
6
0
CY2V013FLXI (7C851004A)
4843328
610853239
ER
COMP
6
0
CY2X014FLXC (7C851002A)
4843328
610853237
ER
COMP
6
0
CY2VC521ZXC-2 (7C851101A)
4903174
610906515/16
ER
COMP
6
0
CY2VC511ZXC (7C851100A)
4903174
610906511/12/13
ER
COMP
6
0
CY2XP31ZXI (7C851200A)
4903174
610908073/75/77
T-Taiwan
COMP
6
0
CY2XL11ZXC (7C851201A)
4903174
610908081/82/83
T-Taiwan
COMP
6
0
CY2X014FLXC (7C851002A)
4903174
610906619
ER
COMP
6
0
CY2V013FLXI (7C851004A)
4903174
610906625
ER
COMP
6
0
CY2V012FLXI (7C851003A)
4903174
610906623
ER
COMP
6
0
CY2X012FLXC (7C851001A)
4903174
610906621
ER
COMP
6
0
CY2VC511ZXC (7C851100A)
4803399
610820266/265/263 CML-RA
COMP
6
0
CY2VC511ZXC (7C851001A)
4803399
610818852
ER
COMP
6
0
CY2X014FLXCT (7C851002A)
4803399
610818855
ER
COMP
6
0
CY2V012FLXCT (7C851003A)
4803399
610818854
ER
COMP
6
0
CY2V013FLXIT (7C851004A)
4803399
610818851
ER
COMP
6
0
CY2XP31ZXC (7C851010A)
4803399
610818851
ER
COMP
6
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
300
80
0
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
500
80
0
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
1000
80
0
CY2VC521ZXC (7C851101AC)
4803399
610820272/270/271 CML-RA
1500
80
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 18 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #: 091601
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY2VC831ZXC (7C851012A)
4903174
610911034/5/6
CML-RA
COMP
8
0
CY2XP91FZXC (7C851202A)
4903174
610911031/2/3
CML-RA
COMP
8
0
STRESS: STATIC LATCH-UP TESTING (125C, ±200mA)
CY2VC831ZXC (7C851012A)
4903174
610911034/5/6
CML-RA
COMP
6
0
CY2XP91FZXC (7C851202A)
4903174
610911031/2/3
CML-RA
COMP
6
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 19 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
093101
Assy Loc
Duration
Samp
Rej
ESD-CHARGE DEVICE MODEL (500V)
CY2XP31ZXC (7C851203A)
4903174
610920081
TAIWAN-T
COMP
9
0
CY2XL11ZXC (7C851204A)
4903174
610919761
TAIWAN-T
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY2XP31ZXC (7C851203A)
4903174
610920081
TAIWAN-T
COMP
8
0
CY2XL11ZXC (7C851204A)
4903174
610919761
TAIWAN-T
COMP
8
0
STRESS:
Failure Mechanism
STATIC LATCH-UP TESTING (125C, ±200mA)
CY2XP31ZXC (7C851203A)
4903174
610920081
TAIWAN-T
COMP
6
0
CY2XL11ZXC (7C851204A)
4903174
610919761
TAIWAN-T
COMP
6
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 20 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Assy Lot #
092803
Assy Loc
Duration
Samp
Rej
Failure Mechanism
E-TEST
CY2X012FLXI (7C85100A)
4917670
N/A
N/A
COMP
COMPARABLE
4917670
N/A
N/A
COMP
COMPARABLE
STRESS: SORT YIELD
CY2X012FLXI (7C85100A)
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 21 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Reliability Test Data
QTP #:
Device
STRESS:
Fab Lot #
Duration
Samp
Rej
TAIWAN-G
COMP
9
0
TAIWAN-G
COMP
8
0
TAIWAN-G
COMP
6
0
Failure Mechanism
4119570
611205893
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, 2200V
CY2XP61LQXI (7C851300A)
STRESS:
120105
Assy Loc
ESD-CHARGE DEVICE MODEL (500V)
CY2XP61LQXI (7C851300A)
STRESS:
Assy Lot #
4119570
611205893
STATIC LATCH-UP TESTING (85C, ±140mA)
CY2XP61LQXI (7C851300A)
4119570
611205893
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 22 of 23
Document No. 001-88013 Rev. *C
ECN #: 4417735
Document History Page
Document Title:
QTP # 064302 : XO LN FLEXO DEVICE FAMILY (LOW NOISE XO/VCXO/VCO CRYSTAL
OSCILLATOR AND CLOCK GENERATOR), L8C-3R TECHNOLOGY, FAB 4
001-88013
Document Number:
Rev. ECN
Orig. of
No.
Change
**
4033666 ILZ
*A
4048909 NSR
*B
4151939 HSTO
*C
4417735 JYF
Description of Change
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo HGA-951 is not in spec format.
Initiated spec for QTP 064302 and all data from Memo HGA-951 was
transferred to qualification report spec template.
Deleted package qualification details on package qualification history
table.
Deleted Cypress reference Spec and replaced with Industry Standards
Updated package availability based on current qualified test &
assembly site.
Added CY2XP61 device and QTP#120105 data.
Changed MID to MPD
Added 24-Pin QFN package option and ASE-TAIWAN for its assembly
site.
Fixed page alignment, font format and data alignment.
Added Document Number in the document history page.
Added device CY2X0147, CY2X0137 & CY2XF327 in the cover page
and marketing part# in MMNH-91.
Update Package Availability table
Sunset Review:
Updated QTP title page;
Updated Reliability Tests Performed table:
- Added industry standard of EFR/LFR,LLV,LTOL,HTSSL,HTS,
HAST,PCT
- Added preconditioning step in Acoustic Microscopy
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 23 of 23