QTP # 032406 :SYNCHRONOUS DUAL PORT ,RAM FAMILY (2MEG, 4MEG, 9MEG 18MEG), R7FTW-3R TECHNOLOGY , FAB4

Document No. 001-87656 Rev. *B
ECN #: 4394116
Cypress Semiconductor
Product Qualification Report
QTP# 032406 VERSION *B
May 2014
Synchronous Dual Port RAM Family
(2 Meg, 4 Meg, 9 Meg & 18 Meg),
R7FTW-3R Technology , Fab4
CY7C0831V
128K x 18 (2M) 3.3V Synchronous Dual-Port RAM
CY7C0832V
256K x 18 (4M) 3.3V Synchronous Dual-Port RAM
CY7C0851V
64K x 36 (2M) 3.3V Synchronous Dual-Port RAM
CY7C0852V
128 x 36 (4M) 3.3V Synchronous Dual-Port RAM
CY7C0853V
256 x 36 (9M) 3.3V Synchronous Dual-Port RAM
CYD18S72V
FLEXx72™ 18-Mb (256K x 72) Synchronous Dual – Port RAM
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Lorena R. Zapanta (ILZ)
Reliability Engineer
Reviewed By:
Rene Rodgers (RT)
Reliability Manager
Approved By:
Richard Oshiro(RGO)
Reliability Director
Company Confidential
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Page 1 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
PRODUCT QUALIFICATION HISTORY
QUAL
REPORT
014807
4 Meg Dual Port Device Qual (7C08523A) and R7FTW-3R Technology Qual
DATE
COMP.
Feb 01
020709
Process R7FTW-3R Via 2 W Plug (4 Meg Dual Port )
Apr 02
023101
032406
DESCRIPTION OF QUALIFICATION PURPOSE
9 Meg Sync Dual Port Stacked Die, R7FT-3R, 172-ball FBGA (15mm x 15mm x
1.25mm), ASE Taiwan Assembly, MSL3
18 Meg Dual Port 2 Stacked Die (4- 4 Meg die), R7FTW-3R, 484-ball FBGA, MSL3
Assembled @ASE-Taiwan
Dec 02
Dec 03
033202
Increased Polyimide thickness of 10um max from 5-6um
Mar 04
044104
6 micron Polyimide thickness for 18 Meg (4-4 ) die fabricated @ Fab4, 484-ball
FBGA
Nov 04
041505
8 micron Polyimide thickness for 18 Meg (4-4 ) die fabricated @ Fab4, 484-ball
FBGA
Nov 04
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Page 2 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Synchronous Dual Port RAM Device Family
Marketing Part #:
CY7C0851V/ CY7C0852V/ CY7C0853V/CY7C0831V/CY7C0832V/CYD18S72V
Device Description: 3.3V, Commercial/Industrial, available in 172-484 ball FBGA & 120-176-pin TQFP
Cypress Division:
Cypress Semiconductor Corporation – Data Com Division (DCD)
Overall Die (or Mask) REV:
Rev. A
What ID markings on Die: 7C08523VA
Number of Metal Layers:
TECHNOLOGY/FAB PROCESS DESCRIPTION – R7FT-3R
3
Metal Composition: Metal 1: 300A TiW/4.23KA Al/150A
Ti Metal 2: 300A TiW/4.23K Al /150A
Ti Metal 3: 300A TiW/8K Al /150A Ti
Passivation Type and Materials:
1,000A TEOS + 9,000A SiN
Free Phosphorus contents in top glass layer(%):
0%
Die Coating(s), if used:
N/A
Number of Transistors in Device:
55 million
Number of Gates in Device:
44 million
Generic Process Technology/Design Rule ( drawn):
Gate Oxide Material/Thickness (MOS):
0.16U
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor – Bloomington Minesota
Die Fab Line ID/Wafer Process ID:
RAM7FT-3R
SiO2 32Å
PACKAGE AVAILABILITY
PACKAGE
172-484 lead FBGA,
176-lead TQFP
ASSEMBLY FACILITY SITE
ASE Taiwan (TAIWN-G)
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
BB172
172-ball, Thin Ball Grid Array (FBGA)
Shinetsu KMC-211AA-EC
V-O per UL94
Oxygen Rating Index:
>28%
Substrate Material:
ASEMT
Lead Finish, Composition / Thickness:
Solder Ball, 63%Sn, 37%Pb
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Backgrind
Die Attach Supplier:
Dexter
Die Attach Material:
QMI 536
Die Attach Method:
Silver Epoxy
Bond Diagram Designation:
10-04438
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0um
Thermal Resistance Theta JA °C/W:
40C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
49-41024
Name/Location of Assembly (prime) facility:
ASE Taiwan (TAIWN-G)
Wafer Saw
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE Taiwan (TAIWN-G), CML-R
Fault Coverage: 100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 4 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
BB484
484-ball, Thin Ball Grid Array (FBGA)
Shinetsu KMC-211AA-EC
V-O per UL94
Oxygen Rating Index:
>28%
Substrate Material:
ASEMT
Lead Finish, Composition / Thickness:
Solder Ball, 63%Sn, 37%Pb
Die Backside Preparation
Method/Metallization:
Die Separation Method:
Backgrind
Die Attach Supplier:
Dexter
Die Attach Material:
QMI 536
Die Attach Method:
Silver Epoxy
Bond Diagram Designation:
10-05261
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 1.0um
Thermal Resistance Theta JA °C/W:
11.11C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
49-41024
Name/Location of Assembly (prime) facility:
ASE Taiwan (TAIWN-G)
Wafer Saw
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Fault Coverage: 100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 5 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
A176
176-pin Thin Quad Flat Pack (TQFP)
Sumitomo EME 7320A
V-O per UL94
Oxygen Rating Index:
>28%
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Solder Plate, 85%Sn, 15%Pb
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
Ablestik 8361
Wire Bond Method:
Thermosonic
Wire Material/Size:
Gold/ 1.2mil
Thermal Resistance Theta JA °C/W:
38C/W
Package Cross Section Yes/No:
N/A
Name/Location of Assembly (prime) facility:
ASE Taiwan (TAIWN-G)
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE Taiwan (TAIWN-G)
Fault Coverage: 100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 6 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
Dynamic Operating Condition, Vcc Max = 2.3V, 125C
P
Dynamic Operating Condition, Vcc Max=2.3V, 125C
P
High Temperature Steady State Life
Static Operating Condition, Vcc = 3.63 V 150C, Vcc Max
P
Temperature Cycle
MIL-STD-883, Method 1010, Condition C, -65C to 150C
Precondition: JESD22 Moisture Sensitivity MSL 3
P
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
192 Hrs., 30C/60%RH, 220C+5, -0C Reflow
121C, 100%RH
Precondition: JESD22 Moisture Sensitivity MSL 3
Pressure Cooker
P
192 Hrs, 30C/60%RH, 220C+5, -0C Reflow
High Accelerated Saturation Test
(HAST)
130C, 3.63V, 85%RH
Precondition: JESD22 Moisture Sensitivity MSL 3
P
192 Hrs, 30C/60%RH, 220C+5, 0C Reflow
High Temperature Storage
150ºC ± 5ºC
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V, JESD22-C101
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V, MIL-STD-883, Method 3015
P
Age Bond Strength
MIL-STD-883, Method 883-2011, 200C
P
Ball Shear
JESD22-B116, Cpk : 1.33, Ppk : 1.66
P
Bond Pull
MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66
P
Die Shear
Die Shear
MIL-STD-883, Method 2019
Per die size: <3000 sq. mils = 1.2 kgf
P
Internal Visual
MIL-STD-883-2014
P
X-Ray
MIL-STD-883, Method 2012
P
Thermal Shock
MIL-STD-883, Method 1011, Condition B, -55 C to 125C and
JESD22-A106, Condition C, -55 C to 125C
P
Current Density
Meets the Technology Device Level Reliability Specifications
P
Acoustic Microscopy, MSL 3
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
P
(192 Hrs., 30 C, 60% RH, 260C Reflow)
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Page 7 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Acceleration
Factor3
Failure Rate
High Temperature Operating Life
Early Failure Rate (4 Meg)
2832
0
N/A
N/A
0 PPM
High Temperature Operating Life
Early Failure Rate (9 Meg)
499
0
N/A
N/A
0 PPM
321
0
N/A
N/A
0 PPM
754,531 HRs
0
0.7
170
7 FIT
High Temperature Operating Life
Early Failure Rate (18 Meg)
High Temperature Operating Life1,2
Long Term Failure Rate
.
1
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
3
Thermal Acceleration Factor is calculated from the Arrhenius equation
2
 E  1 1  
AF = exp  A  -  
 k  T 2 T 1  


where:
EA =The Activation Energy of the defect
mechanism. k = Boltzmann's constant =
8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature
of the device at use conditions.
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Page 8 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 014807
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej
ACOUSTIC, MSL3
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
COMP
15
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
COMP
15
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
COMP
15
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.3V, Vcc Max
CY7C0852V-AC (7C08523A)
STRESS:
4131841
610137123L1
TAIWN-G
48
772
0
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0853V-BBC (7C08533A)
STRESS:
Failure Mechanism
4147878
610145152
TAIWN-G
96
455
0
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.3V, Vcc Max
CY7C0852V-AC (7C08523A)
4131840
610135256
TAIWN-G
80
400
0
CY7C0852V-AC (7C08523A)
4131840
610135256
TAIWN-G
336
256
0
CY7C0852V-AC (7C08523A)
4131840
610135256
TAIWN-G
500
193
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1 TAIWN-G
80
300
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
336
295
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
500
274
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
80
400
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
336
255
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
500
193
0
CY7C0852V-AC (7C08523A)
4133371
610137695
TAIWN-G
80
400
0
CY7C0852V-AC (7C08523A)
4133371
610137695
TAIWN-G
336
398
0
CY7C0852V-AC (7C08523A)
4133371
610137695
TAIWN-G
500
385
0
CY7C0852V-AC (7C08523A)
4133371
610138257L1
TAIWN-G
80
400
0
STRESS: HIGH TEMP STEADY STATE LIFE, 150C, 3.63V, Vcc Max
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
80
78
0
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
168
76
0
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CY7C0852V-AC (7C08523A)
4133371
610137695
TAIWN-G
COMP
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Page 9 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 014807
Device
Fab Lot #
Assy Lot #
Ass Loc
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY7C0852V-AC (7C08523A)
4131840
610135256L1 TAIWN-G
CY7C0852V-AC (7C08523A)
4133371
610137695
TAIWN-G
STRESS:
Duration Samp
Rej
COMP
COMP
9
9
0
0
STATIC LATCH-UP TESTING (125C, 10.0V, +/-300mA)
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
COMP
3
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
COMP
3
0
STRESS:
AGE BOND STRENGTH
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
COMP
5
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
COMP
6
0
STRESS:
HIGH TEMPERATURE STORAGE, +150C
CY7C0852V-BBC (7C08523A)
4128335
610130788
TAIWN-G
500
48
0
CY7C0852V-BBC (7C08523A)
4128335
610130788
TAIWN-G
1000
48
0
STRESS:
Failure Mechanism
HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3
CY7C0852V-AC (7C08523A)
4131840
610135256
TAIWN-G
128
47
0
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
128
48
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
128
46
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY7C0852V-AC (7C08523A)
4131840
610135256L1
TAIWN-G
168
47
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
168
48
0
STRESS:
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
300
47
0
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
500
46
0
CY7C0852V-AC (7C08523A)
4130707
610133760L1
TAIWN-G
1000
45
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
300
46
0
CY7C0852V-AC (7C08523A)
4131841
610137123L1
TAIWN-G
500
45
0
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Page 10 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 020709
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0852V-AC (7C08523A)
4147843
610203531
TAIWN-G
96
595
0
CY7C0852V-AC (7C08523A)
4147843
610203532
TAIWN-G
96
505
0
CY7C0852V-AC (7C08523A)
4150386
610206445
TAIWN-G
96
499
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0852V-AC (7C08523A)
STRESS:
Failure Mechanism
4147843
610203532
TAIWN-G
336
503
0
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CY7C0852V-AC (7C08523A)
4147843
610203532
TAIWN-G
300
44
0
CY7C0852V-AC (7C08523A)
4147843
610203532
TAIWN-G
500
44
0
CY7C0852V-AC (7C08523A)
4147843
610203532
TAIWN-G
1000
44
0
Company Confidential
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Page 11 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 023101
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
ACOUSTIC, MSL3
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
COMP
15
0
CY7C0853V-BBC (7C08533A)
4147878
610145152L1
TAIWN-G
COMP
15
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0853V-BBC (7C08533A)
STRESS:
4147878
610145152
TAIWN-G
96
499
0
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0853V-BBC (7C08533A)
4147878
610145152
TAIWN-G
168
118
0
CY7C0853V-BBC (7C08533A)
4147878
610145152
TAIWN-G
500
118
0
CY7C0853V-BBC (7C08533A)
4147878
610145152
TAIWN-G
1000
118
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,000V
CY7C0853V-BBC (7C08533A)
STRESS:
4147878
610145152L1
TAIWN-G
COMP
9
0
ESD-CHARGE DEVICE MODEL, 500V
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
COMP
9
0
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
COMP
3
0
STRESS:
THERMAL SHOCK, +125C/-55C
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
100
48
0
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
200
48
0
STRESS:
HIGH TEMPERATURE STORAGE, +150C
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
500
48
0
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
1000
48
0
4133371
610136480L
TAIWN-G
COMP
5
0
4133371
610136480L
TAIWN-G
COMP
15
0
CY7C0853V-BBC (7C08533A)
4223477
610234276LM
TAIWN-G
COMP
10
0
CY7C0853V-BBC (7C08533A)
4223477
610237235M
TAIWN-G
COMP
10
0
STRESS:
PHYSICAL DIMENSIONS
CY7C0853V-BBC (7C08533A)
STRESS:
EXTERNAL VISUAL
CY7C0853V-BBC (7C08533A)
STRESS:
Failure Mechanism
BALL SHEAR
Company Confidential
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Page 12 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 023101
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
BOND PULL
CY7C0853V-BBC (7C08533A)
4223477
610234276LM
TAIWN-G
COMP
10
0
CY7C0853V-BBC (7C08533A)
4223477
610237235M
TAIWN-G
COMP
10
0
CY7C0853V-BBC (7C08533A)
4223477
610234276LM
TAIWN-G
COMP
15
0
CY7C0853V-BBC (7C08533A)
4223477
610237235M
TAIWN-G
COMP
15
0
4133371
610136480L
TAIWN-G
COMP
5
0
4133371
610136480L
TAIWN-G
COMP
15
0
STRESS:
STRESS:
DIE SHEAR
INTERNAL VISUAL
CY7C0853V-BBC (7C08533A)
STRESS:
X-RAY
CY7C0853V-BBC (7C08533A)
STRESS:
Failure Mechanism
HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3
CY7C0853V-BBC (7C08533A)
4133371
610136480L
TAIWN-G
128
47
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY7C0853V-BBC (7C08533A)
4223476
610232577LM1
TAIWN-G
168
50
0
CY7C0853V-BBC (7C08533A)
4223477
610234276LM
TAIWN-G
168
50
0
CY7C0853V-BBC (7C08533A)
4223477
610237235M
TAIWN-G
168
49
0
STRESS:
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CY7C0853V-BBC (7C08533A)
4223477
610234276LM
TAIWN-G
300
47
0
CY7C0853V-BBC (7C08533A)
4223476
610232577LM1
TAIWN-G
300
50
0
CY7C0853V-BBC (7C08533A)
4223476
610232577LM1
TAIWN-G
500
50
0
CY7C0853V-BBC (7C08533A)
4223476
610232577LM1
TAIWN-G
1000
50
0
CY7C0853V-BBC (7C08533A)
4223477
610237235M
TAIWN-G
300
49
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 032406
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
ACOUSTIC, MSL3
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
COMP
15
0
CYD18S72V (7C08643A)
4232579
610328841
TAIWN-G
COMP
15
0
CYD18S72V (7C08643A)
4232579
610328842
TAIWN-G
COMP
15
0
4314130
610328687
TAIWN-G
COMP
3
0
TAIWN-G
COMP
9
0
9
0
STRESS:
BOND PULL
CYD18S72V (7C08643A)
STRESS:
ESD-CHARGE DEVICE MODEL, 500V
CYD18S72V (7C08643A)
STRESS:
4314130
610328687
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CYD18S72V (7C08643A)
STRESS:
4314130
610328687
TAIWN-G
COMP
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
96
156
0
CYD18S72V (7C08643A)
4319126
610336976
TAIWN-G
96
165
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
168
155
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
216
88
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
500
82
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
1000
81
0
STRESS:
Failure Mechanism
HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.3V, PRE COND 192 HR 30C/60%RH, MSL3
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
128
46
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
168
48
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
288
48
0
COMP
3
0
STRESS:
STATIC LATCH-UP TESTING (125C, 10.0V, +/-300mA)
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 032406
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
Failure Mechanism
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
300
45
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
500
45
0
CYD18S72V (7C08643A)
4314130
610328687
TAIWN-G
1000
45
0
CYD18S72V (7C08643A)
4232579
610328842
TAIWN-G
300
48
0
CYD18S72V (7C08643A)
4232579
610328842
TAIWN-G
500
48
0
CYD18S72V (7C08643A)
4232579
610328842
TAIWN-G
1000
46
0
CYD18S72V (7C08643A)
4319126
610336976
TAIWN-G
300
48
0
CYD18S72V (7C08643A)
4319126
610336976
TAIWN-G
500
48
0
CYD18S72V (7C08643A)
4319126
610336976
TAIWN-G
1000
44
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 033202
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
Failure Mechanism
ACOUSTIC, MSL3
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
COMP
15
0
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
COMP
15
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
COMP
15
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
COMP
15
0
CY7C0851V (7C08513A)
4322656
610402214
TAIWN-G
COMP
15
0
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
COMP
10
0
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
COMP
10
0
CY7C0853V (7C08533A)
4322656
610341377
TAIWN-G
COMP
10
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
COMP
10
0
CY7C0851V (7C08513A)
4322656
610402214
TAIWN-G
COMP
10
0
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
COMP
10
0
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
COMP
10
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
COMP
10
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
COMP
10
0
CY7C0851V (7C08513A)
4322656
610402214
TAIWN-G
COMP
10
0
STRESS: BALL SHEAR
STRESS: BOND PULL
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max
CY7C0853V (7C08533A)
4322656
610343147
4322656
610342497
TAIWN-G
96
999
0
COMP
5
0
STRESS: INTERNAL VISUAL
CY7C0853V (7C08533A)
TAIWN-G
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
168
45
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
168
49
0
CY7C0853V (7C08533A)
4322656
610341377
TAIWN-G
168
45
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
168
50
0
CY7C0851V (7C08513A)
4322656
610402214
TAIWN-G
168
46
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 033202
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
Failure Mechanism
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
300
45
0
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
500
45
0
CY7C0853V (7C08533A)
4322656
610341182
TAIWN-G
1000
44
0
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
300
45
0
CY7C0853V (7C08533A)
4322656
610342497
TAIWN-G
500
45
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
300
50
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
500
50
0
CY7C0853V (7C08533A)
4322656
610343147
TAIWN-G
1000
50
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
300
50
1
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
500
49
0
CYD18S72V (7C08643A)
4322656
610344846
TAIWN-G
1000
48
0
CY7C0851V (7C08513A)
4322656
610402214
TAIWN-G
300
50
0
TOPSIDE CRACK
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 044104
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
ACOUSTIC, MSL3
CYD18S72V (7C08643A))
4350332
610429074
TAIWN-G
COMP
15
0
CYD18S72V (7C08643A))
4350332
610429075
TAIWN-G
COMP
15
0
300
45
0
300
45
0
STRESS:
Failure Mechanism
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CYD18S72V (7C08643A))
4350332
610429074
CYD18S72V (7C08643A))
4350332
610429075
TAIWN-G
TAIWN-G
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 18 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Reliability Test Data
QTP #: 041505
Device
STRESS:
Fab Lot #
Assy Lot #
Ass Loc
Duration Samp
Rej
ACOUSTIC, MSL3
CYD18S72V (7C08643A))
4350332
610422422
TAIWN-G
COMP
15
0
CYD18S72V (7C08643A))
4350332
610422423
TAIWN-G
COMP
15
0
STRESS:
Failure Mechanism
TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3
CYD18S72V (7C08643A))
4350332
610422422
TAIWN-G
300
49
0
CYD18S72V (7C08643A))
4350332
610422423
TAIWN-G
500
49
0
CYD18S72V (7C08643A))
4350332
610422423
TAIWN-G
300
50
0
CYD18S72V (7C08643A))
4350332
610422423
TAIWN-G
500
50
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 19 of 20
Document No. 001-87656 Rev. *B
ECN #: 4394116
Document History Page
Document Title:
QTP # 032406 : SYNCHRONOUS DUAL PORT ,RAM FAMILY (2MEG, 4MEG, 9MEG &
18MEG), R7FTW-3R TECHNOLOGY , FAB4
001-87656
Document Number:
Rev. ECN
Orig. of
No.
Change
**
4006403 ILZ
*A
4392035 ILZ
Description of Change
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo LGQ-132 and not in spec format.
Initiated spec for QTP 032406 and data from LGQ-132 was transferred
to qualification report spec template
Sunset Review
Updated front page to reflect new qualification report template per
Spec 001-57716
Page 3 – Major package information table - Deleted Assembly process
flow - obsolete spec
Reliability tests performed per specification requirements
Deleted revision of the following standards:
Temperature Cycle, X-ray, Thermal Shock: Deleted Rev C,MIL-STD-883
ESD-CDM : Deleted Rev C, JESD22-C101
Ball Shear: Ball shear, JESD22-B!!6
Thermal Shock: Deleted JESD22-A106
*B
4394116 ILZ
Correction on Page 1 Added this information “ FOR ANY QUESTIONS
ON THIS REPORT, PLEASE CONTACT [email protected] or via a
CYLINK CRM CASE”
Distribution: WEB
Posting:
None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 20 of 20