Document No. 001-87656 Rev. *B ECN #: 4394116 Cypress Semiconductor Product Qualification Report QTP# 032406 VERSION *B May 2014 Synchronous Dual Port RAM Family (2 Meg, 4 Meg, 9 Meg & 18 Meg), R7FTW-3R Technology , Fab4 CY7C0831V 128K x 18 (2M) 3.3V Synchronous Dual-Port RAM CY7C0832V 256K x 18 (4M) 3.3V Synchronous Dual-Port RAM CY7C0851V 64K x 36 (2M) 3.3V Synchronous Dual-Port RAM CY7C0852V 128 x 36 (4M) 3.3V Synchronous Dual-Port RAM CY7C0853V 256 x 36 (9M) 3.3V Synchronous Dual-Port RAM CYD18S72V FLEXx72™ 18-Mb (256K x 72) Synchronous Dual – Port RAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Lorena R. Zapanta (ILZ) Reliability Engineer Reviewed By: Rene Rodgers (RT) Reliability Manager Approved By: Richard Oshiro(RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 PRODUCT QUALIFICATION HISTORY QUAL REPORT 014807 4 Meg Dual Port Device Qual (7C08523A) and R7FTW-3R Technology Qual DATE COMP. Feb 01 020709 Process R7FTW-3R Via 2 W Plug (4 Meg Dual Port ) Apr 02 023101 032406 DESCRIPTION OF QUALIFICATION PURPOSE 9 Meg Sync Dual Port Stacked Die, R7FT-3R, 172-ball FBGA (15mm x 15mm x 1.25mm), ASE Taiwan Assembly, MSL3 18 Meg Dual Port 2 Stacked Die (4- 4 Meg die), R7FTW-3R, 484-ball FBGA, MSL3 Assembled @ASE-Taiwan Dec 02 Dec 03 033202 Increased Polyimide thickness of 10um max from 5-6um Mar 04 044104 6 micron Polyimide thickness for 18 Meg (4-4 ) die fabricated @ Fab4, 484-ball FBGA Nov 04 041505 8 micron Polyimide thickness for 18 Meg (4-4 ) die fabricated @ Fab4, 484-ball FBGA Nov 04 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Synchronous Dual Port RAM Device Family Marketing Part #: CY7C0851V/ CY7C0852V/ CY7C0853V/CY7C0831V/CY7C0832V/CYD18S72V Device Description: 3.3V, Commercial/Industrial, available in 172-484 ball FBGA & 120-176-pin TQFP Cypress Division: Cypress Semiconductor Corporation – Data Com Division (DCD) Overall Die (or Mask) REV: Rev. A What ID markings on Die: 7C08523VA Number of Metal Layers: TECHNOLOGY/FAB PROCESS DESCRIPTION – R7FT-3R 3 Metal Composition: Metal 1: 300A TiW/4.23KA Al/150A Ti Metal 2: 300A TiW/4.23K Al /150A Ti Metal 3: 300A TiW/8K Al /150A Ti Passivation Type and Materials: 1,000A TEOS + 9,000A SiN Free Phosphorus contents in top glass layer(%): 0% Die Coating(s), if used: N/A Number of Transistors in Device: 55 million Number of Gates in Device: 44 million Generic Process Technology/Design Rule ( drawn): Gate Oxide Material/Thickness (MOS): 0.16U Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington Minesota Die Fab Line ID/Wafer Process ID: RAM7FT-3R SiO2 32Å PACKAGE AVAILABILITY PACKAGE 172-484 lead FBGA, 176-lead TQFP ASSEMBLY FACILITY SITE ASE Taiwan (TAIWN-G) Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BB172 172-ball, Thin Ball Grid Array (FBGA) Shinetsu KMC-211AA-EC V-O per UL94 Oxygen Rating Index: >28% Substrate Material: ASEMT Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier: Dexter Die Attach Material: QMI 536 Die Attach Method: Silver Epoxy Bond Diagram Designation: 10-04438 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 40C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41024 Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) Wafer Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE Taiwan (TAIWN-G), CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BB484 484-ball, Thin Ball Grid Array (FBGA) Shinetsu KMC-211AA-EC V-O per UL94 Oxygen Rating Index: >28% Substrate Material: ASEMT Lead Finish, Composition / Thickness: Solder Ball, 63%Sn, 37%Pb Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier: Dexter Die Attach Material: QMI 536 Die Attach Method: Silver Epoxy Bond Diagram Designation: 10-05261 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 11.11C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41024 Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) Wafer Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: A176 176-pin Thin Quad Flat Pack (TQFP) Sumitomo EME 7320A V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plate, 85%Sn, 15%Pb Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: Ablestik 8361 Wire Bond Method: Thermosonic Wire Material/Size: Gold/ 1.2mil Thermal Resistance Theta JA °C/W: 38C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: ASE Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE Taiwan (TAIWN-G) Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 2.3V, 125C P Dynamic Operating Condition, Vcc Max=2.3V, 125C P High Temperature Steady State Life Static Operating Condition, Vcc = 3.63 V 150C, Vcc Max P Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate 192 Hrs., 30C/60%RH, 220C+5, -0C Reflow 121C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 Pressure Cooker P 192 Hrs, 30C/60%RH, 220C+5, -0C Reflow High Accelerated Saturation Test (HAST) 130C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs, 30C/60%RH, 220C+5, 0C Reflow High Temperature Storage 150ºC ± 5ºC P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, MIL-STD-883, Method 3015 P Age Bond Strength MIL-STD-883, Method 883-2011, 200C P Ball Shear JESD22-B116, Cpk : 1.33, Ppk : 1.66 P Bond Pull MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66 P Die Shear Die Shear MIL-STD-883, Method 2019 Per die size: <3000 sq. mils = 1.2 kgf P Internal Visual MIL-STD-883-2014 P X-Ray MIL-STD-883, Method 2012 P Thermal Shock MIL-STD-883, Method 1011, Condition B, -55 C to 125C and JESD22-A106, Condition C, -55 C to 125C P Current Density Meets the Technology Device Level Reliability Specifications P Acoustic Microscopy, MSL 3 J-STD-020 Precondition: JESD22 Moisture Sensitivity Level P (192 Hrs., 30 C, 60% RH, 260C Reflow) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Acceleration Factor3 Failure Rate High Temperature Operating Life Early Failure Rate (4 Meg) 2832 0 N/A N/A 0 PPM High Temperature Operating Life Early Failure Rate (9 Meg) 499 0 N/A N/A 0 PPM 321 0 N/A N/A 0 PPM 754,531 HRs 0 0.7 170 7 FIT High Temperature Operating Life Early Failure Rate (18 Meg) High Temperature Operating Life1,2 Long Term Failure Rate . 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T 1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 014807 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej ACOUSTIC, MSL3 CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G COMP 15 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G COMP 15 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 2.3V, Vcc Max CY7C0852V-AC (7C08523A) STRESS: 4131841 610137123L1 TAIWN-G 48 772 0 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0853V-BBC (7C08533A) STRESS: Failure Mechanism 4147878 610145152 TAIWN-G 96 455 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.3V, Vcc Max CY7C0852V-AC (7C08523A) 4131840 610135256 TAIWN-G 80 400 0 CY7C0852V-AC (7C08523A) 4131840 610135256 TAIWN-G 336 256 0 CY7C0852V-AC (7C08523A) 4131840 610135256 TAIWN-G 500 193 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G 80 300 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G 336 295 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G 500 274 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 80 400 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 336 255 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 500 193 0 CY7C0852V-AC (7C08523A) 4133371 610137695 TAIWN-G 80 400 0 CY7C0852V-AC (7C08523A) 4133371 610137695 TAIWN-G 336 398 0 CY7C0852V-AC (7C08523A) 4133371 610137695 TAIWN-G 500 385 0 CY7C0852V-AC (7C08523A) 4133371 610138257L1 TAIWN-G 80 400 0 STRESS: HIGH TEMP STEADY STATE LIFE, 150C, 3.63V, Vcc Max CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G 80 78 0 CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G 168 76 0 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C0852V-AC (7C08523A) 4133371 610137695 TAIWN-G COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 014807 Device Fab Lot # Assy Lot # Ass Loc STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G CY7C0852V-AC (7C08523A) 4133371 610137695 TAIWN-G STRESS: Duration Samp Rej COMP COMP 9 9 0 0 STATIC LATCH-UP TESTING (125C, 10.0V, +/-300mA) CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G COMP 3 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G COMP 3 0 STRESS: AGE BOND STRENGTH CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G COMP 5 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G COMP 6 0 STRESS: HIGH TEMPERATURE STORAGE, +150C CY7C0852V-BBC (7C08523A) 4128335 610130788 TAIWN-G 500 48 0 CY7C0852V-BBC (7C08523A) 4128335 610130788 TAIWN-G 1000 48 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0852V-AC (7C08523A) 4131840 610135256 TAIWN-G 128 47 0 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G 128 48 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 128 46 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0852V-AC (7C08523A) 4131840 610135256L1 TAIWN-G 168 47 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 168 48 0 STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G 300 47 0 CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G 500 46 0 CY7C0852V-AC (7C08523A) 4130707 610133760L1 TAIWN-G 1000 45 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 300 46 0 CY7C0852V-AC (7C08523A) 4131841 610137123L1 TAIWN-G 500 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 020709 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0852V-AC (7C08523A) 4147843 610203531 TAIWN-G 96 595 0 CY7C0852V-AC (7C08523A) 4147843 610203532 TAIWN-G 96 505 0 CY7C0852V-AC (7C08523A) 4150386 610206445 TAIWN-G 96 499 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0852V-AC (7C08523A) STRESS: Failure Mechanism 4147843 610203532 TAIWN-G 336 503 0 TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CY7C0852V-AC (7C08523A) 4147843 610203532 TAIWN-G 300 44 0 CY7C0852V-AC (7C08523A) 4147843 610203532 TAIWN-G 500 44 0 CY7C0852V-AC (7C08523A) 4147843 610203532 TAIWN-G 1000 44 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 023101 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej ACOUSTIC, MSL3 CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G COMP 15 0 CY7C0853V-BBC (7C08533A) 4147878 610145152L1 TAIWN-G COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0853V-BBC (7C08533A) STRESS: 4147878 610145152 TAIWN-G 96 499 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0853V-BBC (7C08533A) 4147878 610145152 TAIWN-G 168 118 0 CY7C0853V-BBC (7C08533A) 4147878 610145152 TAIWN-G 500 118 0 CY7C0853V-BBC (7C08533A) 4147878 610145152 TAIWN-G 1000 118 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,000V CY7C0853V-BBC (7C08533A) STRESS: 4147878 610145152L1 TAIWN-G COMP 9 0 ESD-CHARGE DEVICE MODEL, 500V CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G COMP 9 0 CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G COMP 3 0 STRESS: THERMAL SHOCK, +125C/-55C CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G 100 48 0 CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G 200 48 0 STRESS: HIGH TEMPERATURE STORAGE, +150C CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G 500 48 0 CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G 1000 48 0 4133371 610136480L TAIWN-G COMP 5 0 4133371 610136480L TAIWN-G COMP 15 0 CY7C0853V-BBC (7C08533A) 4223477 610234276LM TAIWN-G COMP 10 0 CY7C0853V-BBC (7C08533A) 4223477 610237235M TAIWN-G COMP 10 0 STRESS: PHYSICAL DIMENSIONS CY7C0853V-BBC (7C08533A) STRESS: EXTERNAL VISUAL CY7C0853V-BBC (7C08533A) STRESS: Failure Mechanism BALL SHEAR Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 023101 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej BOND PULL CY7C0853V-BBC (7C08533A) 4223477 610234276LM TAIWN-G COMP 10 0 CY7C0853V-BBC (7C08533A) 4223477 610237235M TAIWN-G COMP 10 0 CY7C0853V-BBC (7C08533A) 4223477 610234276LM TAIWN-G COMP 15 0 CY7C0853V-BBC (7C08533A) 4223477 610237235M TAIWN-G COMP 15 0 4133371 610136480L TAIWN-G COMP 5 0 4133371 610136480L TAIWN-G COMP 15 0 STRESS: STRESS: DIE SHEAR INTERNAL VISUAL CY7C0853V-BBC (7C08533A) STRESS: X-RAY CY7C0853V-BBC (7C08533A) STRESS: Failure Mechanism HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0853V-BBC (7C08533A) 4133371 610136480L TAIWN-G 128 47 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0853V-BBC (7C08533A) 4223476 610232577LM1 TAIWN-G 168 50 0 CY7C0853V-BBC (7C08533A) 4223477 610234276LM TAIWN-G 168 50 0 CY7C0853V-BBC (7C08533A) 4223477 610237235M TAIWN-G 168 49 0 STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CY7C0853V-BBC (7C08533A) 4223477 610234276LM TAIWN-G 300 47 0 CY7C0853V-BBC (7C08533A) 4223476 610232577LM1 TAIWN-G 300 50 0 CY7C0853V-BBC (7C08533A) 4223476 610232577LM1 TAIWN-G 500 50 0 CY7C0853V-BBC (7C08533A) 4223476 610232577LM1 TAIWN-G 1000 50 0 CY7C0853V-BBC (7C08533A) 4223477 610237235M TAIWN-G 300 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 032406 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej ACOUSTIC, MSL3 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G COMP 15 0 CYD18S72V (7C08643A) 4232579 610328841 TAIWN-G COMP 15 0 CYD18S72V (7C08643A) 4232579 610328842 TAIWN-G COMP 15 0 4314130 610328687 TAIWN-G COMP 3 0 TAIWN-G COMP 9 0 9 0 STRESS: BOND PULL CYD18S72V (7C08643A) STRESS: ESD-CHARGE DEVICE MODEL, 500V CYD18S72V (7C08643A) STRESS: 4314130 610328687 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYD18S72V (7C08643A) STRESS: 4314130 610328687 TAIWN-G COMP HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 96 156 0 CYD18S72V (7C08643A) 4319126 610336976 TAIWN-G 96 165 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.3V, Vcc Max CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 168 155 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 216 88 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 500 82 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 1000 81 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.3V, PRE COND 192 HR 30C/60%RH, MSL3 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 128 46 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 168 48 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 288 48 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 10.0V, +/-300mA) CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 032406 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 300 45 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 500 45 0 CYD18S72V (7C08643A) 4314130 610328687 TAIWN-G 1000 45 0 CYD18S72V (7C08643A) 4232579 610328842 TAIWN-G 300 48 0 CYD18S72V (7C08643A) 4232579 610328842 TAIWN-G 500 48 0 CYD18S72V (7C08643A) 4232579 610328842 TAIWN-G 1000 46 0 CYD18S72V (7C08643A) 4319126 610336976 TAIWN-G 300 48 0 CYD18S72V (7C08643A) 4319126 610336976 TAIWN-G 500 48 0 CYD18S72V (7C08643A) 4319126 610336976 TAIWN-G 1000 44 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 033202 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism ACOUSTIC, MSL3 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G COMP 15 0 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G COMP 15 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G COMP 15 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G COMP 15 0 CY7C0851V (7C08513A) 4322656 610402214 TAIWN-G COMP 15 0 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G COMP 10 0 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G COMP 10 0 CY7C0853V (7C08533A) 4322656 610341377 TAIWN-G COMP 10 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G COMP 10 0 CY7C0851V (7C08513A) 4322656 610402214 TAIWN-G COMP 10 0 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G COMP 10 0 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G COMP 10 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G COMP 10 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G COMP 10 0 CY7C0851V (7C08513A) 4322656 610402214 TAIWN-G COMP 10 0 STRESS: BALL SHEAR STRESS: BOND PULL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.3V, Vcc Max CY7C0853V (7C08533A) 4322656 610343147 4322656 610342497 TAIWN-G 96 999 0 COMP 5 0 STRESS: INTERNAL VISUAL CY7C0853V (7C08533A) TAIWN-G STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G 168 45 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G 168 49 0 CY7C0853V (7C08533A) 4322656 610341377 TAIWN-G 168 45 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G 168 50 0 CY7C0851V (7C08513A) 4322656 610402214 TAIWN-G 168 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 033202 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G 300 45 0 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G 500 45 0 CY7C0853V (7C08533A) 4322656 610341182 TAIWN-G 1000 44 0 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G 300 45 0 CY7C0853V (7C08533A) 4322656 610342497 TAIWN-G 500 45 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G 300 50 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G 500 50 0 CY7C0853V (7C08533A) 4322656 610343147 TAIWN-G 1000 50 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G 300 50 1 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G 500 49 0 CYD18S72V (7C08643A) 4322656 610344846 TAIWN-G 1000 48 0 CY7C0851V (7C08513A) 4322656 610402214 TAIWN-G 300 50 0 TOPSIDE CRACK Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 044104 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej ACOUSTIC, MSL3 CYD18S72V (7C08643A)) 4350332 610429074 TAIWN-G COMP 15 0 CYD18S72V (7C08643A)) 4350332 610429075 TAIWN-G COMP 15 0 300 45 0 300 45 0 STRESS: Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CYD18S72V (7C08643A)) 4350332 610429074 CYD18S72V (7C08643A)) 4350332 610429075 TAIWN-G TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 18 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Reliability Test Data QTP #: 041505 Device STRESS: Fab Lot # Assy Lot # Ass Loc Duration Samp Rej ACOUSTIC, MSL3 CYD18S72V (7C08643A)) 4350332 610422422 TAIWN-G COMP 15 0 CYD18S72V (7C08643A)) 4350332 610422423 TAIWN-G COMP 15 0 STRESS: Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH , MSL3 CYD18S72V (7C08643A)) 4350332 610422422 TAIWN-G 300 49 0 CYD18S72V (7C08643A)) 4350332 610422423 TAIWN-G 500 49 0 CYD18S72V (7C08643A)) 4350332 610422423 TAIWN-G 300 50 0 CYD18S72V (7C08643A)) 4350332 610422423 TAIWN-G 500 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 19 of 20 Document No. 001-87656 Rev. *B ECN #: 4394116 Document History Page Document Title: QTP # 032406 : SYNCHRONOUS DUAL PORT ,RAM FAMILY (2MEG, 4MEG, 9MEG & 18MEG), R7FTW-3R TECHNOLOGY , FAB4 001-87656 Document Number: Rev. ECN Orig. of No. Change ** 4006403 ILZ *A 4392035 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-132 and not in spec format. Initiated spec for QTP 032406 and data from LGQ-132 was transferred to qualification report spec template Sunset Review Updated front page to reflect new qualification report template per Spec 001-57716 Page 3 – Major package information table - Deleted Assembly process flow - obsolete spec Reliability tests performed per specification requirements Deleted revision of the following standards: Temperature Cycle, X-ray, Thermal Shock: Deleted Rev C,MIL-STD-883 ESD-CDM : Deleted Rev C, JESD22-C101 Ball Shear: Ball shear, JESD22-B!!6 Thermal Shock: Deleted JESD22-A106 *B 4394116 ILZ Correction on Page 1 Added this information “ FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE” Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 20 of 20