Document No.001-87387 Rev. ** ECN # 3986168 Cypress Semiconductor Product Qualification Report QTP# 063901 April 2013 16 Meg MoBL Devices RAM8NLD-1.8V, GSMC (Fab 5) CY62165DV18 MoBL® CY62165DV30 MoBL® 16-Mb (1M x 16) Static RAM Die CY62167DV18 MoBL2™ 16M (1024K x 16) Static RAM CY62167DV20 MoBL2® CY62167DV30 MoBL® CY62167DG30 MoBL® CY62168DV30 MoBL® CY62177DV30 MoBL® 16-Mb (1024K x 16) Static RAM 16-Mbit (1M x 16) Static RAM 16-Mbit (2M x 8) MoBL® Static RAM 32-M (2M X 16) STATIC RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-87387 Rev. ** ECN # 3986168 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp Mar 07 063901 Qualify 16Meg, MoBL Static RAM CY62167DV* device and family on RAM8NLD-1.8 Technology at GSMC Foundry (Fab 5) 070203 Full Qualification of GSMC AMAT PSG Tool using 16M MoBL SRAM, R8NLD-18 Technology Mar 07 071203 R8NLD-18 process change (LICM1) at GSMC May 07 083301 Qualify MM2 minor mask-change for RAM8 16M MoBL family (7G62161DK/ 7C62161DC/7C62171D) fabricated at Fab5 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Nov 08 Document No.001-87387 Rev. ** ECN # 3986168 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CY62167DV* device and family, RAM8NLD-1.8 Technology at GSMC (Fab 5) CY62165/7DV18, CY62167DV20, CY62167/8DV30, CY62167DG30, CY62177DV30* Marketing Part #: Device Description: 1.8V - 3V, Industrial available in 48-ball FBGA and 48-Lead TSOP Cypress Division: Cypress Semiconductor Corporation –Memory Image Division (MID) TECHNOLOGY/FAB PROCESS DESCRIPTION – RAM8NLD-1.8 Number of Metal Layers: 2 Metal Metal 1: 150 Å Ti/250 Å TiN/3500 Å Al Composition Metal 2: 300 Å Ti/200 Å TiN/4500 Å Al/500 Å TiN :1000Å TEOS / 9000Å Si3N4 Passivation Type and Materials: Generic Process Technology/Design Rule (µ-drawn): 0.13 µm Gate Oxide Material/Thickness (MOS): 32Å Name/Location of Die Fab (prime) Facility: Grace Semiconductor-China Die Fab Line ID/Wafer Process ID: Fab5/RAM8NLD-1.8V PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 48-Ball FBGA TAIWAN-G, CML-RA 48-Pin TSOP TAIWAN-G Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No.001-87387 Rev. ** ECN # 3986168 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BA48 48-Ball Fine Pitch Ball Grid Array (VFBGA) KE-G2270 V-O per UL94 Oxygen Rating Index: NA Substrate Material: BT Resin Lead Finish, Composition / Thickness: SnPb Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier: Ablestik Die Attach Material: Ablestik 2025D Die Attach Method: Epoxy Bond Diagram Designation: 10-06162 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 28.37 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-41032 001-06964 Name/Location of Assembly (prime) facility: Taiwan-G CML-RA MSL Level 3 Reflow Profile 220C SnAgCu 100% 10-07075 Au. 0.8mil 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 13 Document No.001-87387 Rev. ** ECN # 3986168 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st Test Condition (Temp/Bias Dynamic Operating Condition, Vcc Max = 2.35V, 125°C Result P/F Dynamic Operating Condition, Vcc Max = 2.35V, 150°C P High Temperature Steady State Life Test Low Temperature Operating Life Test Static Operating Condition, Vcc Max = 2.35V, 150°C P Dynamic Operating Condition, Vcc Max = 2.35V, -30°C P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 130C, 3.63V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 P High Temperature Operating Life P Early Failure Rate High Temperature Operating Life Latent Failure Rate 192 Hrs, 30C/60%RH, 220 ºC Reflow Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65 ºC to 150 ºC Precondition: JESD22 Moisture Sensitivity MSL 3 P Pressure Cooker 192 Hrs, 30C/60%RH, 220 ºC Reflow JESD22-A102: 121 ºC , 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH, 220 ºC Reflow P Acoustic Microscopy J-STD-020 P Age Bond MIL-STD 883, Method 2011 P Current Density Meets the Technology Device Level Reliability Specifications P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JEDEC EIA/JESD22-A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P High Temperature Storage JESD22-A103, 150 ºC, no bias P Static Latch-up 125C, 200mA/ 140mA JESD78B P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 Document No.001-87387 Rev. ** ECN # 3986168 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal 1,3 AF High Temperature Operating Life Early Failure Rate 8,552 Devices 2 N/A N/A High Temperature Operating 1,2, Life Long Term Failure Rate 642,500 DHRs 0 0.7 169 4 Failure Rate 234 PPM 8 FITs 1 Assuming an ambient temperature of 55ºC and a junction temperature rise of 15 ºC. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 4 Fit rate calculation based on limited sample size and device hours 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 063901 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL3 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G COMP 15 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G COMP 15 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G COMP 15 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G COMP 10 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G COMP 10 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G COMP 10 0 STRESS: AGE BOND STRESS: ESD-CHARGE DEVICE MODEL, 500V CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G COMP 9 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G COMP 9 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G COMP 8 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G COMP 8 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G COMP 8 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 96 1540 1 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 96 961 0 CY62167DV30LL (7G62162DK) 9650743 610675324 TAIWN-G 96 257 0 CY62167DV30LL (7G62162DK) 9650743 610703289 TAIWN-G 96 252 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 96 996 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 96 812 1 LICON-Poly Narrow Spacing Particle Defect 2 1. CAR#200710021.1- process fix to increase LICON-Poly space, QTP# 071203 passed EFR and objective spec audit. 2. CAR# 200710033.1 – test program improvement to screen out random particle defect. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 1 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 063901 Ass Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 80 500 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 500 500 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 80 495 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 500 491 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 500 150 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 80 80 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 168 80 0 STRESS: LOW TEMPERATURE OPERATING LIFE TEST, -30C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 500 45 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 500 50 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 1000 50 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.6V, PRE COND 192 HR 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 128 44 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 128 44 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 128 45 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 168 44 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 168 45 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 288 45 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 168 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 063901 Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 300 43 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 500 43 0 CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G 1000 43 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 300 43 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 500 43 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G 1000 43 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 300 44 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G 500 44 0 STRESS: STATIC LATCH-UP TESTING, 125C, 6.5V, 200mA CY62167DV30LL (7G62162DK) 9649742 610673573 TAIWN-G COMP 3 0 CY62167DV30LL (7G62162DK) 9650743 610675172 TAIWN-G COMP 3 0 CY62167DV30LL (7G62162DK) 9703749 610704375 TAIWN-G COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 070203 Ass Loc Duration Samp Rej ESD-CHARGE DEVICE MODEL, 500V CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G COMP 9 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G COMP 8 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G COMP 8 0 STRESS: Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 96 1504 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G 96 1499 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 500 144 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 1.98V, PRE COND 192 HR 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 128 44 0 CY62167DV30LL (7G62162DK) 99705754 610706804 TAIWN-G 128 45 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 168 79 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G 168 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 500 78 0 CY62167DV30LL (7G62162DK) 9703749 610704374 TAIWN-G 1000 77 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G 500 76 0 CY62167DV30LL (7G62162DK) 9705754 610706804 TAIWN-G 1000 68 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 071203 Ass Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.35V, Vcc Max CY62167DV30LL (7G62162DK) 9709761 610714797 TAIWAN-G 96 731 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 083301 Duration Samp Rej Failure Mechanism STRESS: E-TEST YIELD CY62177DV30 (7C62171D) 4829459 N/A N/A COMPARABLE CY62167DV30 (7C62161D) 4833178 N/A N/A COMPARABLE CY62167DV30 (7G62161D) 4835716 N/A N/A COMPARABLE CY62177DV30 (7C62171D) 4829459 N/A N/A COMPARABLE CY62167DV30 (7C62161D) 4833178 N/A N/A COMPARABLE CY62167DV30 (7G62161D) 4835716 N/A N/A COMPARABLE STRESS: SORT YIELD Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-87387 Rev. ** ECN # 3986168 Document History Page Document Title: Document Number: QTP 063901: 16 MEG MOBL DEVICES (CY62167D AND FAMILY) RAM8NLD-1.8V, FAB 5 001-87387 Rev. ECN Orig. of No. Change ** 3986168 ILZ Description of Change Initial Spec Release Documented & converted Memo # HGA-647 into qualification report spec format Removed Version 4.0 in the title page. Removed Cypress reference specs in the reliability tests performed table. Technology/Fab Process Description – Page 3 Corrected Generic Process Technology/Design Rule (µ-drawn) data from 0.15µm to 0.13µm Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13