Document No. 001-81625 Rev. *A ECN #: 4079955 Cypress Semiconductor Product Qualification Report QTP# 043805 July 2013 enCoRe™ II Device Family S4AD-5 Technology, Fab 2 CY7C63310 CY7C638xx CY7C639xx enCoRe™ II Low-Speed USB Peripheral Controller CY7C60123 enCoRe™ II Microcontroller Die CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 PRODUCT QUALIFICATION HISTORY QTP Number 010702 043804 043805 Description of Qualification Purpose New Technology S4AD-5 / New Product, Programmable Clock Generator, CY2414ZC, its product family and bond option 7C6380AT Encore2 USB2CR device family from Fab2 using S4AD-5 technology 7C6390AT Encore2 USB5CR device family from Fab2 using S4AD-5 technology Date Apr 01 Mar 05 Mar 05 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New device CY638xxx/CY7C639xxx and its product family in Technology S4D-5 in Fab 2 Marketing Part #: CY7C63310, CY7C638xx, CY7C639xx, CY7C6123 Device Description: Low Speed USB Peripheral Controller Cypress Division: Cypress Semiconductor Corporation – Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW Passivation Type and Materials: Metal 2: 500A Ti/8,000A Al 0.5% Cu/300A TiW 3,000A TeOs / 6,000A Si3N4 Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device: 279,000 Number of Gates in Device: 1,300 Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2, S4AD-5 PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 16/18/24-Lead SOIC CML-RA, PHIL-M, JT-CHINA 16/18/24/40-Pin PDIP X-THAILAND, CML-RA 28/48-Lead SSOP OSE Taiwan – T, JT-CHINA 24-Lead QSOP JT-CHINA Wafer Sales/ Die Sales N/A Note: Package Qualification details upon request. 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Page 3 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Oxygen Rating Index: PZ40 Lead Frame Material: 40-Lead Plastic Dual In-Line (PDIP) MP-8000 / Nitto V-0 PER UL-94 >28% Copper Lead Finish, Composition / Thickness: 100% Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8361 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au./ 1.0 mil Thermal Resistance Theta JA °C/W: 67.4°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: INDNS-O (Obsolete Site) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Cypress Phil (CML-R), KY-TAIWAN Fault Coverage: 100% Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc Max=5.75V, 125C Early Failure Rate (EFR) Dynamic Operating Condition, Vcc Max=3.8V, 150C JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 150C Latent Failure Rate (LFR) JESD22-A108 Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Result P/F P P P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+Reflow, 235C+0, -5C High Accelerated Stress Test 130C, 3.63V, 85%RH, JESD22-A110 (HAST) Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+ Reflow, 235C+0, -5C High Temperature Steady State life 150C, 3.63V, Vcc Max, JESD22-A108 Low Temperature Operating Life -30C, 4.3V, 8MHZ P P JESD22-A108 Pressure Cooker 121C, 100%RH, 15Psig, JESD22-A102 P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+ Reflow, 235C+0, -5C Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Data Retention 150°C ± 5°C No Bias, JESD22-A117 and JESD22-A103 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 P Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge 500V, JESD22-C101 P Charge Device Model (ESD-CDM) Static Latch-up ± 300mA, 125C, In accordance with JEDEC 17 Dynamic Latch-up 125C, 11.5V P JESD78 Acoustic Microscopy J-STD-020 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 P Document No. 001-81625 Rev. *A ECN #: 4079955 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,015 Devices 0 N/A N/A 0 ppm 180,000 DHRs 0 0.7 170 30 FITs Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Reliability Test Data QTP #: 010702 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 48 1005 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 48 1004 1 NON VISUAL CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 48 1005 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 80 120 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 120 0 STRESS: AGE BOND STRENGTH CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 15 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 15 0 TAIWN-T COMP 3 0 TAIWN-T 500 48 0 STRESS: DYNAMIC LATCH-UP TESTING, 11.5V CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 4.3V CY2414ZC (7C841400A) 2101502 610106170/1/2 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Reliability Test Data QTP #: 010702 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,000V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 9 0 CY2414ZC (7C841400A) 2103764 610106177 TAIWN-T COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, 10V, 300mA CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T COMP 3 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T COMP 3 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 168 HR 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 128 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 256 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 128 48 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 128 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 3.63V CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 80 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 610106170/1/2 TAIWN-T COMP 45 0 STRESS: ENDURANCE TEST CY2414ZC (7C841400A) 2101502 STRESS: DATA RETENTION, PLASTIC, 150C CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 552 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 80 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 552 80 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 168 HR 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 168 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 168 49 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 168 51 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Reliability Test Data QTP #: 010702 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH, MSL1 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2101502 610106170/1/2 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2052404 610106173/4/5 TAIWN-T 1000 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 300 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 500 50 0 CY2414ZC (7C841400A) 2103764 610106176/7/8 TAIWN-T 1000 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Reliability Test Data QTP #: 043804 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.75V, Vcc Max CY7C63913 (7C6391A) 2447432 510500455 INDNS-O 96 1015 0 INDNS-O COMP 9 0 9 0 COMP 3 0 INDNS-O COMP 3 0 510500455 INDNS-O 168 45 0 510500455 INDNS-O 300 45 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C63823 (7C6382A) 2447431 510500542 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C63823 (7C6382A) 2447431 510500542 INDNS-O COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C63823 (7C6382A) 2447431 510500542 INDNS-O STRESS: STATIC LATCH-UP TESTING, 125C, 9.0V, 300mA CY7C63823 (7C6382A) 2447431 510500542 STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C63913 (7C6391A) 2447432 STRESS: TC COND. C -65C TO 150C CY7C63913 (7C6391A) 2447432 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Reliability Test Data QTP #: 043805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.75V, Vcc Max CY7C63913 (7C6391A) 2447432 510500455 INDNS-O 96 1015 0 INDNS-O COMP 9 0 9 0 COMP 3 0 INDNS-O COMP 3 0 510500455 INDNS-O 168 45 0 510500455 INDNS-O 300 45 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C63913 (7C6391A) 2447432 510500455 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY7C63913 (7C6391A) 2447432 510500455 INDNS-O COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C63913 (7C6391A) 2447432 510500455 INDNS-O STRESS: STATIC LATCH-UP TESTING, 125C, 9.5V, 300mA CY7C63913 (7C6391A) 2447432 510500455 STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C63913 (7C6391A) 2447432 STRESS: TC COND. C -65C TO 150C CY7C63913 (7C6391A) 2447432 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-81625 Rev. *A ECN #: 4079955 Document History Page Document Title: Document Number: QTP# 043805: ENCORE (TM) II DEVICE FAMILY S4AD-5 TECHNOLOGY, FAB 2 001-81625 Rev. ECN Orig. of No. Change ** 3689781 NSR *A 4079955 JYF Description of Change Initial Spec Release. Revision from the original qual report released in memo LGQ-214: - Updated the QTP 043805 Version 1.0 to Version 2.0. - Added device CY7C60123in the title page. - Changed the contact Reliability Engineer to Zhaomin Ji. - Changed the device description to Low Speed USB Peripheral Controller. - Changed the product division from CCD to DCD. Removed the Overall Die (or Mask) REV Level (pre-requisite for qualification) and What ID markings on Die in the ‘PRODUCT DESCRIPTION’ table to align with the current template. - Updated the Assembly Facility site. - Added the wafer sales and die sales in package availability table. - Removed obsolete spec Bond Diagram 10-06151 and Assembly Process Flow 49-70095. - Updated the electrical test/ finish location. - Replaced the reference Cypress standards with the industry standards on the reliability tests performed table. Sunset Review: Removed Version 2.0 in QTP title page; Updated Reliability Tests Performed table: - Deleted Rev. C in MIL-STD-883 reference.Revision changes from time to time. - Added referenced industry standards of LTOL and Dynamic Latch-up; - Deleted “3IR” in reflow step of TCT, HAST, PCT. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12