QTP # 062201 :MOBL ADM DUAL-PORT RAM, (CYDMX064/128/256XXX PRODUCT FAMILY ), R52LD-3 TECHNOLOGY, FAB 4

Document No.001-88008 Rev. *A
ECN # 4417735
Cypress Semiconductor
Product Qualification Report
QTP# 062201 VERSION*A
June, 2014
MoBL ADM DUAL PORT
STATIC RAM FAMILY
R52LD-3 TECHNOLOGY, FAB4
CYDMX256A16
CYDMX128A16
CYDMX064A16
4K/8K/16K x 16 MoBL® ADM
Asynchronous Dual–Port
Static RAM
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
PRODUCT QUALIFICATION HISTORY
QUAL
REPORT
DESCRIPTION OF QUALIFICATION PURPOSE
DATE
COMP.
99075
New Technology R52LD-3 / New Slow Low Power MoBL SRAM, CY62137V
Apr 99
052103
Qualify 256K Dual Port (Split Voltage) Device Family, R52LD3 Technology from Fab4
Nov 05
062201
Qualification of Device 7C02638A (MoBL ADM Dual Port) in R52LD-3 Technology at Fab 4
Company Confidential
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Page 2 of 11
Sep 06
Document No.001-88008 Rev. *A
ECN # 4417735
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To qualify 3
rd
Generation MoBL DP ADM on existing package and qualified technology, R52LD-3.
Marketing Part #:
CYDMX256A16, CYDMX128A08, CYDMX064A16
Device Description:
1.8/2.5/3V 256K/128K/64K (16K/8K/4K x 16) MoBL ADMux Dual port
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division
Overall Die (or Mask) REV:
Rev. A
What ID markings on Die:
7C02638A
TECHNOLOGY/FAB PROCESS DESCRIPTION – R52LD3
Number of Metal Layers:
2
Metal
Composition:
Metal 1: 500 Å-TiW/6000 Å Al-Cu/500 Å TiW
Metal 2: 300 Å-Ti/8000 Å Al-Cu/300 Å TiW
Passivation Type and Materials:
1,000A TEOS + 9,000A SiN
Free Phosphorus contents in top glass layer (%):
0%
Die Coating(s), if used:
N/A
Number of Transistors in Device:
2932342
Number of Gates in Device:
733086
Generic Process Technology/Design Rule ( µ-drawn):
R52 TDR (01-30065), 0.25um Technology
Gate Oxide Material/Thickness (MOS):
55Å
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor – Bloomington Minnesota
Die Fab Line ID/Wafer Process ID:
7C02638A
PACKAGE AVAILABILITY
PACKAGE
100-Ball VFBGA
ASSEMBLY FACILITY SITE
ASE Taiwan (TAIWN-G), CML-RA
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
BZ100
100-Ball, Very Fine Ball Grid Array (VFBGA)
KE-G2270
V-O per UL94
Oxygen Rating Index:
N/A
Substrate Material:
CCL-HL832NX
Lead Finish, Composition / Thickness:
SnAgCu
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method:
100%
Die Attach Supplier:
Ablestik
Die Attach Material:
2025D
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-08055
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 0.8mil
Thermal Resistance Theta JA and JC °C/W:
44.21 , 19
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-06964
Name/Location of Assembly (prime) facility:
ASE Taiwan (TAIWN-G)
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Fault Coverage:
100%
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 4 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
Alpha Particle Emission
Result
P/F
P
Data Retention (Hermetic)
0.001 CPH/Cm2
250°C, non-biased
Data Retention (Plastic)
150°C, non-biased
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
JESD22-C101
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JEDEC EIA/JESD22-A114
P
High Accelerated Saturation
Test (HAST)
JEDEC STD 22-A110: 140°C, 3.63V, 85%RH
P
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260°C Reflow)
Dynamic Operating Condition, Vcc Max=3.45V, 125°C
Dynamic Operating Condition, Vcc Max=3.45V, 150°C
Dynamic Operating Condition, Vcc Max=3.8V, 150°C
JESD22-A108
P
High Temperature Operating Life
Early Failure Rate
P
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=3.45V, 125°C
Dynamic Operating Condition, Vcc Max=3.45V, 150°C
Dynamic Operating Condition, Vcc Max=3.8V, 150°C
JESD22-A108
P
High Temperature Steady State Life
Static Operating Condition, Vcc Max = 3.63V, 150°C
JESD22-A108
JESD22-A103:165°C, no bias
P
Long Life Verification
Dynamic Operating Condition, Vcc Max = 3.8V, 150°C
JESD22-A108
P
Low Temperature Operating Life
Dynamic Operating Condition, Vcc = 3.8V, -30°C, f = 8 MHz
JESD22-A108
P
Pressure Cooker
JESD22-A102, 121°C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
125C, ± 200mA
P
High Temperature Storage
Static Latch-up
P
P
In accordance with JEDEC 17
Temperature Cycle
Thermal Series
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30°C, 60% RH, 260C Reflow)
MIL-STD-883-5005, D3
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Page 5 of 11
P
P
Document No.001-88008 Rev. *A
ECN # 4417735
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life1,2
Long Term Failure Rate
.
Activation
Energy
Acceleration
Factor3
Failure Rate
1078 Devices
#
Fail
s
0
N/A
N/A
0 PPM
400,500 HRs
1
0.7
170
30 FITs
1
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
3
Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use
conditions.
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Page 6 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
Reliability Test Data
QTP #: 99075
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
ESD-CHARGE DEVICE MODEL, 500V
CY62137V-ZSIB
4852210
619903364
CSPI-R
COMP
3
0
CY62137V-ZSIB
4851023
619907600
CSPI-R
COMP
3
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, >Vcc Max)
CY62137V-ZSIB
4852210
619903364
CSPI-R
48
1505
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
48
1504
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, >Vcc Max)
CY62137V-ZSIB
4852210
619903364
CSPI-R
80
405
0
CY62137V-ZSIB
4852210
619903364
CSPI-R
500
405
1
CY62137V-ZSIB
4902501
619905577
CSPI-R
80
396
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
500
396
0
1000
404
0
STRESS:
4852210
619903364
CSPI-R
HIGH TEMP DYNAMIC STEADY STATE LIFE TEST, (150C, 3.63V, >Vcc Max)
CY62137V-ZSIB
4852210
619903364
CSPI-R
80
80
0
CY62137V-ZSIB
4852210
619903364
CSPI-R
168
80
0
45
0
STRESS:
LOW TEMPERATURE OPERATING LIFE, (-30C, 3.8V, 8 MHZ)
CY62137V-ZSIB
STRESS:
4852210
619903364
CSPI-R
500
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CY62137V-ZSIB
4852210
619903364
CSPI-R
COMP
3
0
CY62137V-ZSIB
4851023
619907600
CSPI-R
COMP
3
0
STRESS:
HIGH TEMPERATURE STORAGE, 165C, no bias
CY62137V-ZSIB
4852210
619903364
CSPI-R
336
47
0
CY62137V-ZSIB
4852210
619903364
CSPI-R
1000
47
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
336
48
0
STRESS:
UNKNOWN
LONG LIFE VERIFICATION, (150C, 3.8V, >Vcc Max)
CY62137V-ZSIB
STRESS:
Failure Mechanism
TC CONDITION C, -65C TO 150C, PRE COND 192 HRS 30C/60% RH, MSL3
CY62137V-ZSIB
4852210
619903364
CSPI-R
300
48
0
CY62137V-ZSIB
4852210
619903364
CSPI-R
1000
48
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
300
48
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
1000
48
0
Company Confidential
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Page 7 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
Reliability Test Data
QTP #: 99075
Device
STRESS:
Fab Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192HRS 30C/60%RH, MSL3
CY62137V-ZSIB
STRESS:
Assy Lot #
4852210
619903364
CSPI-R
168
48
0
HI-ACCEL SATURATION TEST, (140C, 3.63V), 85%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY62137V-ZSIB
4852210
619903364
CSPI-R
128
48
0
CY62137V-ZSIB
4852210
619903364
CSPI-R
256
48
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
128
48
0
CY62137V-ZSIB
4902501
619905577
CSPI-R
256
48
0
CY62137V-ZSIB
4903568
619907944
CSPI-R
128
48
0
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Page 8 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
Reliability Test Data
QTP #: 052103
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.45V, Vcc Max
CYDC256B16 (7C02628A)
4531145
610540035
TAIWN-G
48
330
0
CYDC256B16 (7C02628A)
4531145
610540036
TAIWN-G
48
328
0
CYDC256B16 (7C02628A)
4531145
610540037
TAIWN-G
48
332
0
STRESS:
ESD-CHARGE DEVICE MODEL, 500V
CYDM256B16 (7C02628A)
4531145
610539449
TAIWN-G
COMP
9
0
CYDC256B16 (7C02628A)
4531145
610540035/6/7
TAIWN-G
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CYDM256B16 (7C02628A)
4531145
610539449
TAIWN-G
COMP
9
0
CYDC256B16 (7C02628A)
4531145
610540035/6/7
TAIWN-G
COMP
9
0
STRESS:
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CYDM256B16 (7C02628A)
4531145
610539449
TAIWN-G
COMP
3
0
CYDC256B16 (7C02628A)
4531145
610540035/6/7
TAIWN-G
COMP
3
0
TAIWN-G
COMP
3
0
168
50
0
STRESS:
Failure Mechanism
STATIC LATCH-UP TESTING (125C, 7.0V, +/-300mA)
CYDM256B16 (7C02628A)
4531145
610539449
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CYDM256A16 (7C02618A)
STRESS:
4503160
610510254
TAIWN-G
TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
300
50
0
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
500
50
0
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
1000
50
0
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Page 9 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
Reliability Test Data
QTP #: 062201
Device
STRESS:
Fab Lot #
Assy Loc
610543349
TAIWN-G
Duration
Samp
Rej
4522569
COMP
5
0
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.45V, Vcc Max
CYDCX256A16 (7C02638A)
4622252
610647256
CML-R
48
485
0
CYDCX256A16 (7C02638A)
4622252
610647257
CML-R
48
400
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.45V, Vcc Max
CYDMX256A16 (7C02638A)
STRESS:
TAIWN-G
96
193
0
4622252
610646577
TAIWN-G
COMP
9
0
4622252
COMP
9
0
TAIWN-G
COMP
3
0
TAIWN-G
COMP
3
0
168
50
0
610646577
TAIWN-G
ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CYDMX256A16 (7C02638A)
STRESS:
610646577
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CYDMX256A16 (7C02638A)
STRESS:
4622252
ESD-CHARGE DEVICE MODEL, 500V
CYDMX256A16 (7C02638A)
STRESS:
Failure Mechanism
ALPHA PARTICLE EMISSION
CYDC256B16 (7C02628A)
STRESS:
Assy Lot #
4622252
610646577
STATIC LATCH-UP TESTING (125C, 5.4V, +/-200mA)
CYDMX256A16 (7C02638A)
4622252
610646577
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3
CYDM256A16 (7C02618A)
STRESS:
4503160
610510254
TAIWN-G
TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
300
50
0
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
500
50
0
CYDM256A16 (7C02618A)
4503160
610510254
TAIWN-G
1000
50
0
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Page 10 of 11
Document No.001-88008 Rev. *A
ECN # 4417735
Document History Page
Document Title:
QTP # 062201 : MoBL ADM DUAL-PORT RAM, (CYDMX064/128/256xxx Product Family ),
R52LD-3 TECHNOLOGY, FAB 4
Document Number:
001-88008
Rev. ECN
Orig. of
No.
Change
**
4033621 ILZ
*A
4417735 JYF
Description of Change
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo HGA-168 and not in spec format.
Initiated spec for QTP 062201 and all data from memo# HGA-168
was transferred to qualification report spec template.
Deleted package qualification details on package qualification history
table.
Deleted Cypress reference Spec and replaced with Industry Standards
Updated package availability based on current qualified test &
assembly site.
Sunset review:
Updated QTP title page and Reliability Tests Performed table
(ESD-HBM, HAST, EFR/LFR, HTSSL, HTS, LLV, LTOL, PCT) for
template alignment.
Distribution: WEB
Posting:
None
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Page 11 of 11