Document No. 001-84795 Rev. *B ECN #:4583572 Cypress Semiconductor Product Qualification Report QTP# 99395 VERSION*B December, 2014 Synchronous/Asynchronous Dual Port SRAM (3.3V and 5V) R42HD Technology, Fab 4 Qualification CY7C026A(V)/CY7C036A(V) 16K x 16/18 Asynchronous DP SRAM CY7C025A(V)/CY7C0251A(V) 8K x 16/18 Asynchronous DP SRAM CY7C024A(V)/CY7C0241A(V) 4K x 16/18 Asynchronous DP SRAM CY7C09269A(V)/CY7C09369A(V) 16K x16/18 Synchronous DP SRAM CY7C09349A(V)/CY7C09359A(V) 4K/8K x 18 Synchronous DP SRAM CY7C007A(V)/CY7C017A(V) 32K x 8/9 Asynchronous DP SRAM CY7C006A(V)/CY7C016A(V) 16K x 8/9 Asynchronous DP SRAM CY7C144A(V)/CY7C145A(V) 8K x 8/9 Asynchronous DP SRAM CY7C138A(V)/CY7C139A(V) 4K x 8/9 Asynchronous DP SRAM CY7C09079A(V)/CY7C09179A(V) 32K x 8/9 Synchronous DP SRAM CY7C09159A(V)/CY7C09169A(V) 8K/16K x 9 Synchronous DP SRAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda (JYF) Reliability Engineer Reviewed By: Zhaomin Ji (ZIJ) Reliability Manager Approved By: Richard Oshiro (RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 98064 New Technology R42HD/ New CY7C1093, 1Meg Ram Product. Apr 98 98244 New CY7C026 Asynchronous DP SRam, R42HD Technology Dec 98 99395 New CY7C09269A, Asynchronous DP SRam, R42HD Technology Nov 99 Note: Based on using the same design rules and cells to establish a product family, as in JESD-47, Cypress qualifies devices within a product technology by using generic data from that product family to fill out the qualification requirements for those reliability stresses which test intrinsic reliability of the technology. Reliability stresses, such as ESD and Early Life, which are design sensitive are routinely performed in qualifications to ensure the specific design is reliable. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify CY7C09269A and its family with new metal layers change,R42HD Technology,Fab 4 Marketing Part #: CY7C09269A Device Description: 3.3V and 5V, Commercial available in 100-pin TQFP and 68-pin PLCC Package. Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) Overall Die (or Mask) REV: Die Size: Rev. F 153 x 230 mils What ID markings on Die: 7C09369AVA / 7C0369A TECHNOLOGY/FAB PROCESS DESCRIPTION - R42HD Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW/6000Å Al -5%Cu/1200Å TiW Metal 2: 500Å TiW/8000Å Al -5%Cu/300Å TiW Passivation Type and Materials: 7000Å SiO2 + 6000Å Si3N4 Free Phosphorus contents in top glass layer(%): 0% Die Coating(s), if used: N/A Generic Process Technology/Design Rule (drawn): CMOS, Double Metal /0.42 m Gate Oxide Material/Thickness (MOS): SiO2 / 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R42HD PACKAGE AVAILABILITY PACKAGE TYPE ASSEMBLY SITE FACILITY 68-pin PLCC PHIL-M 100-pin TQFP TAIWN-G Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: A100 100-pin Thin Plastic Quad Flatpack (TQFP) Hitachi CEL 9200 Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: >28% Lead Frame Material: Copper Alloy 194 Lead Finish, Composition / Thickness: Solder Plated 85%Sn, 15%Pb Die Backside Method/Metallization: N/A Preparation Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8361H Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.3um Thermal Resistance Theta JA °C/W: 49°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: ASE, Taiwan (TAIWN-G) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE, Taiwan (TAIWN-G) Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, 150C/125C, 5.75V/6.5V Early Failure Rate JESD22-A-108 High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, 150C, 5.75V Extended Dynamic Burn-in Result P/F P P JESD22-A-108 Dynamic Operating Condition, 150C, 5.75V P JESD22-A-108 Read and Record Life Test Dynamic Operating Condition, 150C, 5.75V P JESD22-A-108 High Temperature Steady State Life Static Operating Condition, 150C, 5.75V P High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 140°C, 85%RH, 5.5V Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P Pressure Cooker Test JESD22-A102:121°C /100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C -30C, 6.5V Cold Life Test P JESD22-A-108 High Temp Storage JESD22-A103: 165°C, no bias P Current Density Meets the Technology Device Level Reliability Specifications P 200°C, 4HRS Age Bond Pull MIL-STD-883, Method 883-2011 Electrostatic Discharge P 2200V, JESD22-A114 P 500V, JESD22-C101 P +/- 300mA, JESD78 P Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Latch - up Sensitivity Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate High Temperature Operating 2,3 Life Long Term Failure Rate 1 2 3 4 5 Device Tested/ Device Hours # Fails Activation Energy Thermal 5 AF Failure Rate 2,026 0 N/A N/A 0 PPM 1,055,080 DHRs 0 0.7 170 5 FIT A production burn-in of 48 Hrs at 150C, 6.5V is required for the product Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 5 5 EFR Failure Rate based on QTP 99395 and 99244. LFR Failure Rate based on QTP 98064. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY TEST DATA QTP#: 99395 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ FAIL MODE ==================== ======== ======== ============== ======== ==== === ================================ STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V) CY7C09269A-AC(7C0269F) TAIWN-G 4931048 619928230L1 48 518 0 CY7C09269A-AC(7C0269F) TAIWN-G 4931048 619928230L1 48 500 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C09269A-AC(7C0269F) TAIWN-G 4931048 619928230L1 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (4400V) CY7C09269A-AC(7C0269F) TAIWN-G 4931048 619928230L1 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: STATIC LATCH-UP TESTING CY7C09269A-AC(7C0269F) (+/-300mA) TAIWN-G 4931048 619928230L1 COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY TEST DATA QTP#: 98244 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ ==================== ======== ======== ============== ======== ==== === STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 6.5V) FAIL MODE ================================ CY7C026-AC(7C026E) TAIWN-G 4827620 619809368L2 48 476 0 CY7C026-AC(7C026E) TAIWN-G 4827620 619809368L2 48 476 0 CY7C026-AC(7C026E) TAIWN-G 4827620 619809368L2 48 56 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-CHARGE DEVICE MODEL CY7C026-AC(7C026E) TAIWN-G 4833177 619811293 COMP/500V 3 0 CY7C017-JCB(7C017E) PHIL-M 4833177 619812371 COMP/1000V 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2200V) CY7C026-AC(7C026E) TAIWN-G 4833177 619811293 COMP 3 0 CY7C017-JCB(7C017E) PHIL-M 4833177 619812371 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: STATIC LATCH-UP TESTING (125C, 12V) CY7C017-JCB(7C017E) PHIL-M 4833177 619812371 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C026-AC(7C026E) TAIWN-G 4827620 619809368L2 168 48 0 --------------------------------------------------------------------------------------------------------------STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL 3) CY7C026-AC(7C026E) TAIWN-G 4827620 619809368L2 300 48 0 --------------------------------------------------------------------------------------------------------------- Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY TEST DATA 1 QTP#: 98064 DEVICE ASSY-LOC FABLOT# ==================== ======== ======== STRESS: ESD-CHARGE DEVICE MODEL, 1000V ASSYLOT# ============== DURATION ======== S/S ==== REJ === FAIL MODE ================================ CY7C109-VC(7C109H) INDNS-O 4738602 519712560 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C109-VC(7C109H) INDNS-O 4738602 519712560 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: STATIC LATCH-UP TESTING (125C, 11V) CY7C109-VC(7C109H) INDNS-O 4738602 519712560 COMP 3 0 --------------------------------------------------------------------------------------------------------------STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V,85%RH), PRECOND. 192 HRS 30C/60%RH CY7C109-VC(7C109H) INDNS-O 4738602 519712560 128 46 0 CY7C109-VC(7C109H) CY7C109-VC(7C109H) INDNS-O INDNS-O 4738564 4738564 519712898 519712898 128 256 46 46 0 0 CY7C109-VC(7C109H) INDNS-O 4739644 519714390 128 46 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C109-VC(7C109H) INDNS-O 4738602 519712560 336 46 0 CY7C109-VC(7C109H) INDNS-O 4738602 519712560 500 46 0 CY7C109-VC(7C109H) INDNS-O 4738602 519712560 1000 46 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C109-VC(7C109H) CY7C109-VC(7C109H) INDNS-O INDNS-O 4738602 4738602 519712560 519712560 80 168 78 78 0 0 CY7C109-VC(7C109H) INDNS-O 4739644 519714390 80 78 0 CY7C109-VC(7C109H) INDNS-O 4739644 519714390 168 78 0 --------------------------------------------------------------------------------------------------------------STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C109-VC(7C109H) CY7C109-VC(7C109H) INDNS-O INDNS-O 4739644 4739644 519714390 519714390 80 500 528 527 0 0 CY7C109-VC(7C109H) INDNS-O 4745042 519800651L1 80 529 0 CY7C109-VC(7C109H) INDNS-O 4745042 519800651L1 500 529 0 --------------------------------------------------------------------------------------------------------------STRESS: EXTENDED DYNAMIC BURN-IN (150C, 5.75V) CY7C109-VC(7C109H) INDNS-O 4739644 519714390 1000 527 0 --------------------------------------------------------------------------------------------------------------STRESS: COLD LIFE TEST (-30C, 6.5V) CY7C109-VC(7C109H) INDNS-O 4738602 519712560 500 45 0 CY7C109-VC(7C109H) INDNS-O 4738602 519712560 1000 45 0 --------------------------------------------------------------------------------------------------------------STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C109-VC(7C109H) CY7C109-VC(7C109H) 1 INDNS-O INDNS-O 4738602 4738602 519712560 519712560 48 500 10 10 0 0 R42HD Technology qualification (1Meg SRAM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-84795 Rev. *B ECN #:4583572 RELIABILITY TEST DATA QTP#: 98064 DEVICE ==================== STRESS: ASSY-LOC ======== FABLOT# ======== ASSYLOT# ============== DURATION ======== S/S ==== REJ === FAIL MODE ================================ TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH CY7C109-VC(7C109H) CY7C109-VC(7C109H) INDNS-O INDNS-O 4738602 4738602 519712560 519712560 300 1000 46 46 0 0 CY7C109-VC(7C109H) INDNS-O 4738564 519712898 300 46 0 CY7C109-VC(7C109H) INDNS-O 4739644 519714390 300 46 0 --------------------------------------------------------------------------------------------------------------- Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-84795 Rev. *B ECN #: 4583572 Document History Page Document Title: QTP 99395: SYNCHRONOUS/ASYNCHRONOUS DUAL PORT SRAM (3.3V AND 5V) R42HD TECHNOLOGY, FAB 4 QUALIFICATION Document Number: 001-84795 Rev. ECN Orig. of No. Change ** 3819942 NSR *A 4202436 JYF *B 4583572 JYF Description of Change Initial Release Sunset review: Complete re-write of Reliability Tests Performed table for template alignment; Sunset review: Updated QTP title page for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11