Document No. 002-03892 Rev. ** ECN #: 5018957 Cypress Semiconductor Automotive Product Qualification Report QTP# 133601 VERSION ** November 2015 Automotive 16-MBIT Asynchronous SRAM Family ULL65nm (LL65UP-250DR) Technology, UMC Fab12A CY62167G30 CY7C1061G30 CY7C1051H30 CY7C1061G30 MOBL® AUTOMOTIVE, 16-MBIT (1M WORDS X 16 BIT) STATIC RAM WITH ERROR-CORRECTING CODE (ECC) FAST AUTOMOTIVE, 16-MBIT (1M WORDS X 16 BIT) STATIC RAM WITH ERROR-CORRECTING CODE (ECC) FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 PRODUCT QUALIFICATION HISTORY Qual Report 133601 Description of Qualification Purpose Qualification of Automotive 16-MBIT Asynchronous SRAM Family, ULL65nm (LL65UP250DR) Technology, UMC Fab12A Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 15 Date Comp Jun 15 Document No. 002-03892 Rev. ** ECN #: 5018957 PRODUCT DESCRIPTION (for qualification) Qualification of Automotive 16-MBIT Asynchronous SRAM Family, ULL65nm (LL65UP-250DR) Technology, UMC Fab12A CY62167G30, CY7C1061G30, CY7C1051H30, CY7C1061G30 Marketing Part #: Device Description: Automotive, 164MB (1M X 16 ) Static Ram With Error Correcting Code (ECC) Cypress Division: Cypress Semiconductor Corporation – Memory Products Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 5 Metal + 1 RDL Passivation Type and Materials: drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: Metal Metal 1: Cu 0.18um Composition: Metal 2: Cu 0.22um Metal 3: Cu 0.22um Metal 4: Cu 0.36um Metal 5: Cu 1.25um Metal 6 RDL: Al 1.2um 0.4um oxide/0.5um nitride CMOS 65nm SiON / 19.5 A UMC / Taiwan Fab12A L65LL PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE QTP NUMBER 48-Lead VFBGA (6x8x1.0mm) CML-Philippines (RA) 143606 48-Lead VFBGA (6x8x1.0mm) ASEK-Taiwan (G) 143606 44-Lead TSOP II (400mil) ASEK-Taiwan (G) 141401 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: BZ48A Package Outline, Type, or Name: 48L VFBGA 6x8x1.0mm Mold Compound Name/Manufacturer: GR9810 / Henkel Mold Compound Flammability Rating: V0 UL94 Mold Compound Alpha Emission Rate: 0.002 CPH/cm2 Oxygen Rating Index: >28% 54 (Typical) / 28 (Min. value) Lead Frame Designation: N/A Lead Frame Material: N/A Substrate Material: BT / KIT Lead Finish, Composition / Thickness: SAC-105 Die Backside Preparation Method/Metallization: Backgrind to 7mils Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI-506 Bond Diagram Designation 001-91668 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8mil Thermal Resistance Theta JA C/W: 32 degC /W Package Cross Section Yes/No: Y Assembly Process Flow: 002-03811 Name/Location of Assembly (prime) facility: CML-Philippines (RA) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos-Taiwan (GO), CML-Philippines (RA Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: ZT48A Package Outline, Type, or Name: 48L TSOP I Mold Compound Name/Manufacturer: EME-G631H / Sumitomo Mold Compound Flammability Rating: V-0 / UL94 Mold Compound Alpha Emission Rate: <0.0010 CPH/cm2 Oxygen Rating Index: >28% >28% Lead Frame Designation: FMP Lead Frame Material: Copper Substrate Material: N/A Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Saw Die Attach Supplier: Sumitomo Die Attach Material: CRM-1076WA Bond Diagram Designation 001-88666 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8mil Thermal Resistance Theta JA C/W: 56.94 degC/W Package Cross Section Yes/No: Y Assembly Process Flow: 49-41001 Name/Location of Assembly (prime) facility: ASEK-Taiwan (G) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos Taiwan (GO) Note: Please contact a Cypress Representative for other packages availability. 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Page 5 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: BZ48A Package Outline, Type, or Name: 48L VFBGA (6x8x1.0mm) Mold Compound Name/Manufacturer: KE-G2250 / Kyocera Mold Compound Flammability Rating: V0 UL94 Mold Compound Alpha Emission Rate: </=0.1 Oxygen Rating Index: >28% >28% Lead Frame Designation: N/A Lead Frame Material: N/A Substrate Material: BT Lead Finish, Composition / Thickness: SAC105 (SnAgCu) Die Backside Preparation Method/Metallization: Backgrind to 7mils Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: Ablestik 2100A Bond Diagram Designation 001-85194 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8mil Thermal Resistance Theta JA C/W: 32 degC/W Package Cross Section Yes/No: Y Assembly Process Flow: 49-41001 Name/Location of Assembly (prime) facility: ASEK-Taiwan (G) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos Taiwan (GO) Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) Temperature Cycle Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108, 125°C Dynamic Operating Condition, Vcc Max = 1.44V JESD22-A108, 1250°C Dynamic Operating Condition, Vcc Max = 1.44V JESD22-A110, 130C, 3.65V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C JESD22-A104, -65C to 150C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Pressure Cooker Result P/F P P P P P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V/4000V/6000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-011 250V/500V/750V (corner pins) P Electrostatic Discharge 200V, JESD22-A115-A P Machine Model (ESD-MM) Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P Soft Error (Alpha Particle) JESD89 P Final Visual JESD22-B101B P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Post Temperature Cycle Wire Bond Pull Mil-Std 883, Method 2011 High Temperature Storage Life JESD22-A103, 150 C Test P P Dye Penetrant Test Static Latch-up Criteria: No Package Crack AEC-Q100-004, +/140mA, 125C P Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Acoustic J-STD-020 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 15 P Document No. 002-03892 Rev. ** ECN #: 5018957 Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 12,009 Devices 0 N/A N/A 0 PPM 729,000 Device Hours 0 0.7 170 23 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 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Page 8 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # 133601 Assy Lot # Assy Loc Duration Samp Rej CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 22 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 22 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 22 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G COMP 22 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G COMP 22 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 100 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 100 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 100 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 100 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 100 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 100 0 611340601 ASE-G COMP 5 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 15 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 15 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 15 0 Failure Mechanism STRESS: ACOUSTIC, MSL3 STRESS: BALL SHEAR STRESS: BOND PULL STRESS: CONSTRUCTIONAL ANALYSIS CY7C1061G30 (7AP171061AO) 9308001 STRESS: DYE PENETRANT TEST Company Confidential A printed copy of this document is considered uncontrolled. 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Page 9 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 133601 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 1.44V, Vcc Max CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 96 275 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 96 264 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 96 107 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 96 560 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 96 556 0 CY7C1061G30 (7AP171061AO) 9313001 611508409 ASE-G 96 271 0 CY7C1061G30 (7AP171061AO) 9313001 611511127 ASE-G 96 361 0 CY62167G30 (7CC1721673AO) 9423005 611500929 CML-RA 96 927 0 CY62167G30 (7CC1721673AO) 9438003 611506601 CML-RA 96 3609 0 CY62167G30 (7CC1721673AO) 9423006 611440524 CML-RA 96 1600 0 CY7C1061G30 (7AP1710612AO) 9423006 611422550 ASE-G 96 761 0 CY7C1061G30 (7CC171061AO) 9324001 611342911 ASE-G 96 1627 0 CY7C1061G30 (7AP1710612AO) 9341020 611422551 ASE-G 96 1091 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 250 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 500 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 750 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 250 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 500 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 750 3 0 STRESS: ELECTRICAL DISTRIBUTION STRESS: ESD-CHARGE DEVICE MODEL Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # 133601 Assy Lot # Assy Loc Duration Samp Rej CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 500 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 1000 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 1500 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 2000 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 4000 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 6000 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 500 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 1000 3 0 CY62167G30 (7AP172167AO) 9438001 611503292 ASE-G 2000 3 0 611340601 ASE-G 200 5 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 986 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 749 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 748 0 Failure Mechanism STRESS: ESD-HUMAN BODY MODEL STRESS: ESD-MACHINE MODEL CY7C1061G30 (7AP171061AO) 9308001 STRESS: FINAL VISUAL INSPECTION STRESS: HI-ACCEL SATURATION TEST, 130C, 3.65V, 85%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 96 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 192 79 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 96 80 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 192 79 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 96 74 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 128 74 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 96 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 128 77 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 11 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # 133601 Assy Lot # Assy Loc Duration Samp Rej CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 1000 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 2000 80 0 611340601 ASE-G COMP 5 0 Failure Mechanism STRESS: HIGH TEMPERATURE STORAGE STRESS: LEAD INTEGRITY CY7C1061G30 (7AP171061AO) 9308001 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 1.44V, Vcc Max CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 1000 84 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 1000 84 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 1000 84 0 CY7C1069G30 (7AP171069AO) 9313001 611404705 CML-RA 1000 80 0 CY7C1069G30 (7AP171069AO) 9313001 611404699 CML-RA 1000 77 0 CY7C1069G30 (7AP171069AO) 9313001 611404743 CML-RA 1000 80 0 CY7C1061G30 (7AP1710612AO) 9324001 611404528 ASE-G 1000 80 0 CY7C1061G30 (7AP1710612AO) 9324001 611404529 ASE-G 1000 80 0 CY7C1061G30 (7AP1710612AO) 9324001 611404527 ASE-G 1000 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 96 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 168 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 192 80 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 96 80 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 168 80 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 192 78 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 96 79 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 168 79 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 192 78 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 96 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 168 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 96 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 168 77 0 STRESS: PRESSURE COOKER TEST Company Confidential A printed copy of this document is considered uncontrolled. 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Page 12 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # 133601 Assy Lot # Assy Loc Duration Samp Rej CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G COMP 30 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G COMP 30 0 ASE-G 500 5 0 Failure Mechanism STRESS: PHYSICAL DIMENSION STRESS: POST TEMPERATURE CYCLE WIRE BOND PULL CY7C1061G30 (7AP171061AO) 9308001 611340601 STRESS: PRE/POST LFR CRITICAL PARAMETER CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 30+2 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 30+2 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 30+2 0 STRESS: STATIC LATCH-UP (+/-140mA 85C) CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 6 0 CY62167G30 (7AP172167AO) 611503292 ASE-G COMP 6 0 ASE-G COMP 2 0 ASE-G COMP 2 0 UMC COMP 3 0 0 UMC COMP 3 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G COMP 15 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G COMP 15 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G COMP 15 0 9438001 STRESS: STATIC LATCH-UP (+/-180mA 85C) CY7C1061G30 (7AP171061AO) 9308001 611340601 STRESS: STATIC LATCH-UP (+/-140mA 125C) CY7C1061G30 (7AP171061AO) 9308001 611340601 STRESS: SER – ALPHA PARTICLE SEL, 25C/85C/120C, 1.65V/3.3V/5.5V 7C1710614GE 0 0 STRESS: SER – NEUTRON SEL, 85C/125C, 5.25V 7C17165A 0 STRESS: SOLDERABILITY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 133601 Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 500 80 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 1000 75 0 CY7C1061G30 (7AP171061AO) 9308001 611340601 ASE-G 2000 75 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 500 79 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 1000 79 0 CY7C1061G30 (7AP171061AO) 9308001 611336557 ASE-G 2000 79 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 500 79 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 1000 79 0 CY7C1061G30 (7AP171061AO) 9313001 611336551 ASE-G 2000 79 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 500 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422547 ASE-G 1000 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 500 77 0 CY7C1061G30 (7AP171061AO) 9313001 611422548 ASE-G 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 15 Document No. 002-03892 Rev. ** ECN #: 5018957 Document History Page Document Title: QTP#133601: Automotive 16-MBIT Asynchronous SRAM Family ULL65nm (LL65UP-250DR) Technology, UMC Fab12A Document Number: 002-03892 Rev. ECN No. Orig. of Change Description of Change ** HSTO Initial spec release 5018957 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 15