Document No. 001-73770 Rev. *E ECN #: 4596444 Cypress Semiconductor Product Qualification Report QTP# 110905 VERSION*E December 2014 PSoC5 Device Family S8P-5RP Technology, Fab4 CMI CY8C5248 PSoC5 Programmable System-onCY8C5247 Chip (PSoC®) CY8C5246 CY8C5368 PSoC5 Programmable System-onCY8C5367 Chip (PSoC®) CY8C5366 CY8C5365 CY8C5468 PSoC5 Programmable System-onCY8C5467 Chip (PSoC®) CY8C5466 CY8C5568 PSoC5 Programmable System-onCY8C5567 Chip (PSoC®) CY8C5566 CY8C5588 FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 083401 Qualify SONOS S8DI-5R Technology in Fab 4 using PSoC 8C20066BC Krypton Device Jan 09 080902 Qualification of 8C38000BC revision ES2 on S8Q-5R at CMI Apr 10 101101 Qualification of all layer tapeout 8C38000CC device revision ES3 Feb 11 Qualification of PSoC5 (8C55000B) New Device in Fab4 MI Using S8P5P technology PSoC5 device and fab process change qualification, reduce last metal layer to 12K Metal, and increase the oxide passivation to 10K, at Fab4 CMI using S8P- 5P technology. Sep 11 110905 114110 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 17 Jan 12 Document No. 001-73770 Rev. *E ECN #: 4596444 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify PSoC5 (8C55000B) New Device in S8P-5RP Technology, Fab4 Marketing Part #: CY8C52xx, CY8C53xx, CY8C54xx, CY8C55xx Device Description: Industrial Programmable System on a Chip in 100L TQFP and 68 QFN package Cypress Division: Cypress Semiconductor Corporation – Programmable Systems Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 5 Metal Composition: Passivation Type and Thickness: Metal 1: 100Å Ti / 3200 Å Al – 0.5%Cu / 300Å TiW Metal 2: 100Å Ti / 3200 Å Al – 0.5%Cu / 350Å TiW Metal 3: 150Å Ti / 7200 Å Al – 0.5%Cu / 350Å TiW Metal 4: 150Å Ti / 7200 Å Al – 0.5%Cu / 350Å TiW Metal 5: 300Å Ti / 12,000 Å Al –0.5%Cu/ 300Å TiW 10,000 Å SiO2 /6000 Å Si3N4 Generic Process Technology/Design Rule (-drawn): S8P-5P/ 0.13u Gate Oxide Material/Thickness (MOS): Thermal oxide / Gate1: 110 Å, Gate2: 32 Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/ S8P-5RP PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 100-Lead TQFP 68 - QFN JT-China, CML-RA, CML-R CML-RA Note: Package Qualification details upon request. 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Page 3 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: AZ100 Mold Compound Flammability Rating: 100L TQFP 14x14mm / Thin Quad Flatpack package KE-G6000 / Kyocera V-O per UL94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing Die Attach Supplier: Dexter Die Attach Material: QMI509 Die Attach Method: Die Attach Epoxy Bond Diagram Designation: 001-47127, 001-69403, 001-68783 Wire Bond Method: Thermosonic Wire Material/Size: Au. 0.8 mil Thermal Resistance Theta JA °C/W: 44.66°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-73777, 001-73775 Name/Location of Assembly (prime) facility: JT-China & CML-RA MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F P High Temperature Operating Life Dynamic Operating Condition, 150C, 2.07V/2.1V, 48 Hours Early Failure Rate (EFR) JESD22-A-108-B High Temperature Operating Life Dynamic Operating Condition, 150C, 2.07V/2.1V, 500 Hours Latent Failure Rate (LFR) JESD22-A-108-B High Temperature Steady State life 150°C, 2.1V, Vcc Max P Low Temperature Operating Life -30°C, 2.1V Endurance Per datasheet, JESD22-A117 P P Data Retention JESD22-A117 and JESD22-A103, 150C, No Bias Temperature Cycle -65 C to 150 C, JESD22-A-104, 500 Cycles Precondition: JESD22 Moisture Sensitivity Level 3 0 0 P P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C High Accelerated Saturation Test (HAST) 130C, 5.5V/5.25, 85%RH, JESD22-A-110-B, 128 Hours Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C High Temp Storage 150 C, no bias Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Pressure Cooker 121C/100%RH, JESD22-A102-C, 168 Hours Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Aged Bond Strength 200C, 4hrs, MIL-STD-883, Method 883-2011 P Bond Pull MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66 P Ball Shear JESD22-B116A, Cpk : 1.33, Ppk : 1.66 Current Density Meets the Technology Device Level Reliability Specifications P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 500V, JESD22-A114E P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C P Static Latch-up ± 100mA, 85C, 5.5V Neutron Single Latch-up (SEL) 6.26E+09 n/cm , Vccmax, 85 C, JESD89A SEM Cross Section MIL-STD-883, Method 2018 2 P 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 17 132 FITs/Device P Document No. 001-73770 Rev. *E ECN #: 4596444 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 4590 Devices 1 N/A N/A 218 PPM 1,125,080 DHRs 0 0.7 170 5 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY8C20566 (8C20566AC) 4827949 610844164 CML-R COMP 3 0 CY8C20466 (8C20466AC) 4804681 610822808 Malaysia-CA COMP 3 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 78 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 500 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 1000 78 0 CY8C20566 (8C20566AC) 4810486 610830786 CML-R 168 77 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 168 77 0 CY8C20566 (8C20566AC) 4827949 610844164 CML-R 168 79 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 168 76 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 500 9 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 9 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A COMP 1 0 STRESS: SEM CROSS SECTION CY8C20066 (8C20066AC) 4810486 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP (85C, 8.25V) CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 6 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 6 0 410.23.02 Promex 6 0 CY8C20666 (8C20666AC) 4837410 COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 2200 8 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 2200 8 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C20566 (8C20566AC) 4827949 610844164 CML-R 48 1002 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 48 1008 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 48 1004 1 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 48 45 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 48 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 96 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 500 390 0 (1) Destroyed during analysis Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 80 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8C20566 (8C20566AC) 4815537 610835437 CML-R 500 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 500 77 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 256 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 333 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 288 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 080902 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C3866AXI-040ES2 4931690 610940091 CML-R COMP 15 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R COMP 15 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R COMP 15 0 STRESS: AGED BOND STRENGTH CY8C3866AXI-040ES2 4931690 610940091 CML-R DATA 10 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R DATA 10 0 STRESS: DATA RETENTION, 150C CY8C3866AXI-040ES2 4931690 610940091 CML-R 1000 77 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 1000 80 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R 1000 77 0 CY8C3866AXI-040ES2 4931690 610940091 CML-R 168 77 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 168 78 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 500 78 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R 168 79 0 STRESS : ENDURANCE STRESS : ESD-CHARGE DEVICE MODEL, (500V) CY8C3866AXI-040ES2 4931690 610940091 CML-R COMP 9 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (500V) CY8C3866AXI-040ES2 4931690 610940091 CML-R COMP 8 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R COMP 8 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, +/-100mA) CY8C3866AXI-040ES2 4931690 610940091 CML-R COMP 6 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R COMP 6 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max) CY8C3866AXI-040ES2 4931690 610942165 CML-R 48 1000 1 SCAN, non-visual CY8C3866AXI-040ES2 4936339 610945758 CML-R 48 1028 2 SCAN, non-visual CY8C3866AXI-040ES2 4937255 611000644 CML-R 48 1006 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 080902 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REG-ON (150C, 6.0V, Vcc Max) CY8C3866AXI-040ES2 4931690 610942165 CML-R 48 51 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 48 47 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C3866AXI-040ES2 4931690 610942165 CML-R 500 116 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 500 125 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R 500 125 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C3866AXI-040ES2 4931690 610940091 CML-R 128 77 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 128 75 0 CML-R 1000 125 0 STRESS: LONG LIFE VERIFICATION (150C, 2.07V, Vcc Max) CY8C3866AXI-040ES2 4937255 611000644 STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) CY8C3866AXI-040ES2 4931690 610940091 CML-R 168 77 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 168 78 0 STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HRS 30C/60%RH (MSL3) CY8C3866AXI-040ES2 4931690 610940091 CML-R 500 77 0 CY8C3866AXI-040ES2 4936339 610945758 CML-R 500 77 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R 500 77 0 CY8C3866AXI-040ES2 4937255 611000644 CML-R 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 101101 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C3866AXI-040ES3 4014971 611030680 CML-RA COMP 15 0 STRESS: DATA RETENTION, 150C CY8C3866AXI-040ES3 4014971 611041229 CML-R 500 80 0 CY8C3866AXI-040ES3 4014971 611041229 CML-R 1000 80 0 CY8C3866AXI-040ES3 4014971 611041229 CML-R 168 78 0 CY8C3866AXI-040ES3 4036951 611057357 CML-R 168 79 0 COMP 9 0 COMP 8 0 COMP 6 0 STRESS : ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C3866AXI-040ES3 4016039-21 OFFLINE BUILD CML-R STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114-B, (750V) CY8C3866AXI-040ES3 4016039 611046656 CML-R STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, +/-140mA) CY8C3866AXI-040ES3 4016039-21 OFFLINE BUILD CML-R STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max) CY8C3866AXI-040ES3 4045350 611104218 CML-R 48 1549 0 CY8C3866AXI-040ES3 4045268 611104217 CML-R 48 1550 1 high via resistance STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REG-ON (150C, 6.0V, Vcc Max) CY8C3866AXI-040ES3 4033237 611048454 CML-R 48 56 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) CY8C3866AXI-040ES3 4045350 611104218 CML-R 168 80 0 CY8C3866AXI-040ES3 4045268 611104217 CML-R 168 80 0 STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3) CY8C3866AXI-040ES3 4045350 611104218 CML-R 500 80 0 CY8C3866AXI-040ES3 4045268 611104217 CML-R 500 78 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C3866AXI-040ES3 4045350 611104218 CML-R 500 120 0 CY8C3866AXI-040ES3 4045268 611104217 CML-R 500 120 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 110905 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C5588 (8C55881AC) 4052988 611120567 JT-CHINA COMP 15 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R COMP 15 0 CY8C5568 (8C55881AC) 4112653 611122980 CML-R COMP 15 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C5588 (8C55881AC) 4052988 611120441 CML-R 500 77 0 CY8C5588 (8C55881AC) 4052988 611120441 CML-R 1000 77 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 500 80 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 1000 80 0 CY8C5588 (8C55881AC) 4052988 611120442 CML-R 168 78 0 CY8C5568 (8C55881AC) 4112653 611123644 JT-CHINA 168 80 0 CY8C5568 (8C55881AC) 4112653 611123644 JT-CHINA 500 80 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C5588 (8C55881AC) 4052988 611120442 CML-R COMP 9 0 CY8C5588 (8C55881AC) 4052988 611120221 CML-RA COMP 9 0 CML-R COMP 6 0 8 0 STRESS: STATIC LATCH-UP, 100mA, 85°C, 5.5V CY8C5568 (8C551001BC) 4113504 611138640 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (750V) CY8C5588 (8C55881AC) 4052988 611120442 CML-R COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max) CY8C5588 (8C55881AC) 4052988 611120441 CML-R 48 998 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 48 957 0 CY8C5568 (8C55881AC) 4112653 611122980 CML-R 48 1024 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125, 6V, Vcc Max) CY8C5588 (8C55881AC) 4052988 611120441 CML-R 96 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 110905 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C5588 (8C55881AC) 4052988 611120441 CML-R 80 116 0 CY8C5588 (8C55881AC) 4052988 611120441 CML-R 500 116 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 80 116 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 500 116 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C5588 (8C55881AC) 4052988 611120221 CML-RA 128 77 0 CY8C5568 (8C550681BC) 4112653 611124413 CML-RA 128 83 0 CY8C5568 (8C550681BC) 4113504 611135561 CML-RA 128 79 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C5568 (8C55881AC) 4112653 611123644 JT-CHINA 168 77 0 CY8C5568 (8C55881AC) 4112653 611123644 JT-CHINA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C5588 (8C55881AC) 4052988 611120567 JT-CHINA 500 77 0 CY8C5588 (8C55881AC) 4052988 611120567 JT-CHINA 1000 74 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 500 78 0 CY8C5588 (8C55881AC) 4102901 611121602 CML-R 1000 78 0 CY8C5568 (8C55881AC) 4112653 611122980 CML-R 500 77 0 CY8C5568 (8C55881AC) 4112653 611122980 CML-R 1000 76 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 114110 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA COMP 15 0 CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA COMP 15 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 15 0 CY8C5568LTI (8C550681B) 4137655 611154512 CML-RA COMP 15 0 CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA COMP 10 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 10 0 CY8C5568LTI (8C550681B) 4137655 611154512 CML-RA COMP 10 0 CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA COMP 10 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 10 0 CY8C5568LTI (8C550681B) 4137655 611154512 CML-RA COMP 10 0 STRESS: BALL SHEAR STRESS: BOND PULL STRESS: CONSTRUCTIONAL ANALYSIS CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA COMP 5 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 5 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA COMP 9 0 CY8C5568AXI (8C551001B) 4130915 611153438 JT-CHINA COMP 9 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 9 0 JT-CHINA COMP 6 0 STRESS: STATIC LATCH-UP, 100mA, 85°C, 5.5V CY8C5568AXI (8C551001B) 4130915 611150107 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (500V) CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA COMP 3 0 CY8C5568AXI (8C551001B) 4130915 611153438 JT-CHINA COMP 8 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA COMP 8 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max) CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA 48 118 0 CY8C5568AXI (8C551001B) 4135316 611154627 JT-CHINA 48 1444 1 Intermittent failure Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Reliability Test Data QTP #: 114110 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA 80 118 0 CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA 500 117 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA 128 27 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA 128 27 0 STRESS: HIGH TEMPERATURE STORAGE TEST, 150C CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA 500 80 0 CY8C5568LTI (8C550681B) 4130915 611148398 CML-RA 1000 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 168 80 0 CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 288 80 0 CY8C5568AXI (8C551001B) 4130915 611153438 JT-CHINA 168 37 0 CY8C5568AXI (8C551001B) 4130915 611153438 JT-CHINA 288 37 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA 168 80 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA 288 80 0 611148398 CML-RA COMP 2 0 STRESS: SEM X-SECTION CY8C5568LTI (8C550681B) 4130915 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 500 80 0 CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 1000 74 0 CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA 500 80 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA 500 77 0 CY8C5568LTI (8C550681B) 4137655 611154512 CML-RA 500 84 0 CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 500 5 0 CY8C5568LTI (8C550681B) 4130915 611148399 CML-RA 1000 5 0 CY8C5568AXI (8C551001B) 4130915 611150107 JT-CHINA 500 1 0 CY8C5568LTI (8C550681B) 4135316 611153052 CML-RA 500 5 0 CY8C5568LTI (8C550681B) 4137655 611154512 CML-RA 500 5 0 STRESS: POST TCT X-SECTION Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 17 Document No. 001-73770 Rev. *E ECN #: 4596444 Document History Page Document Title: QTP 110905: PSOC5 DEVICE FAMILY (CY8C52XX/CY8C53XX/CY8C54XX/CY8C55XX) S8P5P TECHNOLOGY, FAB 4 CMI 001-73770 Document Number: Rev. ECN No. ** 3422944 *A 3501748 Orig. of Change NSR NSR *B 3278619 NSR *C 3735725 ILZ *D 4184061 HSTO *E 4596444 HSTO Description of Change Initial Spec Release Added QTP 114110 data. Added 68 QFN package availability assembled in CML-RA Updated the Metal 5 layer composition and the gate oxide thickness. Updated Contact Reliability Engineer. Removed the reference cypress spec# of the tests performed and replaced with industry standards. Deleted Spec 11-20046 on Major Information Table (Page 4) - Obsolete Spec Added Neutron SEL data on Reliability Test Performed Table (Page 5) Sunset Review Deleted “REV 01” in front page Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 17