BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code (tape and reel) 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 3 V Forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature range Tstg – 55 … + 150 °C Rth JA ≤ 450 K/W Thermal Resistance Junction-ambient1) 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BAT 63 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Reverse current VR = 3 V IR Forward voltage IF = 1 mA VF Diode capacitance VR = 0.2 V, f = 1 MHz CT Case capacitance CC nA – LS 0.65 0.85 0.1 – kΩ – 30 – nH – Semiconductor Group 300 pF – Series inductance 190 pF – R0 10 mV – Differential resistance V = 0, f = 10 kHz – 2 2 – BAT 63 Forward current IF = f (VF) Forward current IF = f (TS; TA) Permissible Pulse load RthJS = f (tp) Semiconductor Group Permissible Pulse load IFmax / IFDC = f (tp) TA = 25 °C 3