DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1 • High power gain PIN SYMBOL • Easy power control 1 d1 drain 1 • Good thermal stability 2 d2 drain 2 • Gold metallization ensures excellent reliability. 3 g1 gate 1 4 g2 gate 2 5 s source APPLICATIONS DESCRIPTION • Broadcast transmitter applications in the VHF frequency range. DESCRIPTION 1 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. 2 d g s g 5 4 Top view CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. d 5 3 MAM098 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) CW, class-AB 225 50 250 Gp (dB) ∆Gp (dB)(1) ηD (%) >14 <1 >50 typ. 16 typ. 0.6 typ. 55 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input / 25% synchronized output compression in television service (negative modulation, CCIR system). WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jul 29 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDSS drain-source voltage − 110 V VGSS gate-source voltage − ±20 V ID drain current (DC) − Ptot total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded − Tstg storage temperature Tj junction temperature 18 A 500 W −65 150 °C − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W MRA988 MGE616 500 100 handbook, halfpage handbook, halfpage Ptot (W) ID (A) 400 (2) (1) (2) (1) 300 10 200 100 1 1 10 0 500 100 0 40 80 Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 °C. 160 Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1998 Jul 29 120 Th (°C) VDS (V) Fig.3 Power derating curves. 3 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 50 mA 110 − − V IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2.0 − 4.5 V ∆VGS gate-source voltage difference of both transistor sections ID = 50 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S gfs1/gfs2 forward transconductance ratio of both transistor sections ID = 5 A; VDS = 10 V 0.9 − 1.1 RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 25 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF Cd-f drain-flange capacitance − 5.4 − pF MGE623 0 MGE622 30 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) −1 20 −2 −3 10 −4 −5 10−2 10−1 0 1 ID (A) 0 10 VDS = 10 V. Fig.4 10 VGS (V) 15 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. 1998 Jul 29 5 Fig.5 4 Drain current as a function of gate-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 MGE621 400 MGE615 1200 handbook, halfpage handbook, halfpage RDSon (mΩ) C (pF) 300 800 200 Cis 400 100 Cos 0 0 0 50 100 150 0 20 Tj (°C) ID = 5 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature; typical values per section. MGE620 400 handbook, halfpage Crs (pF) 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. 1998 Jul 29 5 40 VDS (V) 60 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 APPLICATION INFORMATION Class-AB operation RF performance in CW operation in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω (VDS = 50 V). MODE OF OPERATION CW, class-AB f (MHz) VDS (V) IDQ (A) PL (W) 225 50 2 × 0.5 250 225 45 2 × 0.5 250 Gp (dB) ∆Gp (dB)(1) ηD (%) >14 <1 >50 typ. 16 typ. 0.6 typ. 55 typ. 15 typ. 1 typ. 60 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized input / 25% synchronized output compression in television service (negative modulation, CCIR system). Ruggedness in class-AB operation The BLF378 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the conditions: VDS = 50 V; f = 225 MHz at rated output power. 1998 Jul 29 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 MGE614 MGE612 60 20 handbook, halfpage handbook, halfpage (1) ηD (%) (2) Gp (dB) (1) (2) 40 10 20 0 0 0 100 200 0 300 PL (W) 100 200 PL (W) 300 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.9 Fig.10 Efficiency as a function of load power; typical values per section. Power gain as a function of load power; typical values per section. MGE613 400 handbook, halfpage PL (W) 300 (1) (2) 200 100 0 0 5 10 Pi (W) 15 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz; ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section). (1) Th = 25 °C. (2) Th = 70 °C. Fig.11 Load power as a function of input power; typical values per section. 1998 Jul 29 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C23 R2 R8 C10 A L14 C15 R3 C24 C11 C8 C16 ,,, ,,, ,,,, ,,, ,,, ,,,, R4 L15 D.U.T. L12 C3 L1 50 Ω input L4 L18 L20 C31 C33 C1 R1 L2 C2 C5 C6 C7 C21 C28 C20 C29 R10 C34 8 L7 L9 L11 L5 L13 L19 L21 R5 L16 C9 ,, L23 C30 C4 L3 ,, L22 L6 L8 L10 C32 50 Ω output Philips Semiconductors C22 C14 VHF push-pull power MOS transistor k, full pagewidth 1998 Jul 29 +VDD1 L24 MGE617 C17 C12 C25 C18 A R6 C13 C35 +VDD1 L17 R9 R11 IC1 R7 C38 C37 C26 C36 C19 C27 Fig.12 Test circuit for class-AB operation. BLF378 f = 225 MHz. Product specification +VDD2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 List of components class-AB test circuit (see Figs 12 and 13). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2 multilayer ceramic chip capacitor; note 1 27 pF, 500 V C3, C4, C31, C32 multilayer ceramic chip capacitor; note 1 3 × 18 pF in parallel, 500 V C5 film dielectric trimmer 4 to 40 pF 2222 809 08002 C6, C30 film dielectric trimmer 2 to 18 pF 2222 809 09006 C7 multilayer ceramic chip capacitor; note 1 100 pF, 500 V C8, C9, C15, C18 MKT film capacitor 1 µF, 63 V 2222 371 11105 C10, C13, C14, C19, C36 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C11, C12 multilayer ceramic chip capacitor; note 1 2 × 1 nF in parallel, 500 V C16, C17 electrolytic capacitor 220 µF, 63 V C20 multilayer ceramic chip capacitor; note 1 3 × 33 pF in parallel, 500 V C21 film dielectric trimmer 2 to 9 pF C22, C27, C37, C38 multilayer ceramic chip capacitor; note 1 1 nF, 500 V C23, C26, C35 electrolytic capacitor 10 µF, 63 V C24, C25 multilayer ceramic chip capacitor; note 1 2 × 470 pF in parallel, 500 V C28 multilayer ceramic chip capacitor; note 1 2 × 10 pF in parallel + 18 pF, 500 V C29 multilayer ceramic chip capacitor; note 1 2 × 5.6 pF in parallel, 500 V C33, C34 multilayer ceramic chip capacitor; note 1 5.6 pF, 500 V L1, L3, L22, L24 stripline; note 2 50 Ω 4.8 × 80 mm L2, L23 semi-rigid cable; note 3 50 Ω ext. conductor length 80 mm ext. dia 3.6 mm L4, L5 stripline; note 2 43 Ω 6 × 24 mm L6, L7 stripline; note 2 43 Ω 6 × 14.5 mm L8, L9 stripline; note 2 43 Ω 6 × 4.4 mm L10, L11 stripline; note 2 43 Ω 6 × 3.2 mm L12, L13 stripline; note 2 43 Ω 6 × 15 mm L14, L17 grade 3B Ferroxcube wideband HF choke 2 in parallel L15, L16 13⁄4 turns enamelled 2 mm copper wire 40 nH 1998 Jul 29 9 2222 809 09005 4312 020 36642 space 1 mm int. dia. 10 mm leads 2 × 7 mm Philips Semiconductors Product specification VHF push-pull power MOS transistor COMPONENT BLF378 DESCRIPTION VALUE DIMENSIONS L18, L19 stripline; note 2 43 Ω 6 × 13 mm L20, L21 stripline; note 2 43 Ω 6 × 29.5 mm R1 metal film resistor 4 × 0.4 W, 10 Ω R2, R7 10 turns potentiometer 50 kΩ R3, R6 metal film resistor 0.4 W, 1 kΩ R4, R5 metal film resistor 2 × 0.4 W, 5.62 Ω in parallel R8, R9 metal film resistor 1 W, 10 Ω, ±5% R10 metal film resistor 4 × 1 W, 10 Ω in parallel R11 metal film resistor 1 W, 5.11 kΩ IC1 voltage regulator 78L05 CATALOGUE No. Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines L1, L3 to L13, L18 to L22 and L24 are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm. 3. Semi-rigid cables L2 and L23 are soldered on to striplines L1 and L24. 1998 Jul 29 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 130 119 handbook, full pagewidth strap strap strap strap Hollow rivets Hollow rivets 100 strap strap strap strap C24 VDD1 R11 C38 L2 C35 slider R2 L1 C1 50 Ω input to R2,R7 C36 C16 IC1 C3 R1 C2 C37 C11 C13 R6 L3 C8 C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 C4 slider R7 C15 L15 L12 C20 L13 R5 C12 C18 C17 C23 L22 VDD1 C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 C9 C22 C14 L14 R8 L14 R10 50 Ω output VDD2 L17 R9 L17 C19 C25 L23 L24 C26 C27 MBC436 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets. Fig.13 Printed-circuit board and component layout for 225 MHz class-AB test circuit. 1998 Jul 29 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 MGE611 2 handbook, halfpage zi (Ω) 1 MGE625 3 handbook, halfpage ZL (Ω) ri XL 2 0 xi 1 RL −1 –2 150 200 f (MHz) 0 150 250 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Fig.14 Input impedance as a function of frequency (series components); typical values per section. Fig.15 Load impedance as a function of frequency (series components); typical values per section. MGE624 20 handbook, halfpage Gp (dB) 10 0 150 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; RGS = 2.8 Ω (per section); PL = 250 W. Fig.16 Power gain as a function of frequency; typical values per section. 1998 Jul 29 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A1 D A F U1 B q C w2 M C H1 1 H c 2 E1 p U2 5 E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 5.85 5.58 0.16 0.10 inches 0.227 0.197 0.230 0.006 0.220 0.004 OUTLINE VERSION D F H H1 p Q q U1 U2 w1 w2 w3 21.98 10.27 10.29 11.05 21.71 10.05 10.03 1.78 1.52 20.58 20.06 17.02 16.51 3.28 3.02 2.85 2.59 27.94 34.17 33.90 9.91 9.65 0.51 1.02 0.25 0.865 0.404 0.405 0.435 0.855 0.396 0.395 0.070 0.060 0.81 0.79 0.67 0.65 0.129 0.119 0.112 1.100 0.102 1.345 1.335 0.390 0.380 0.02 0.04 0.01 e E E1 REFERENCES IEC JEDEC EIAJ SOT262A1 1998 Jul 29 EUROPEAN PROJECTION ISSUE DATE 97-06-28 13 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 29 14 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF378 NOTES 1998 Jul 29 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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