BOURNS BU407

BU406, BU407
NPN SILICON POWER TRANSISTORS
●
7 A Continuous Collector Current
●
15 A Peak Collector Current
●
60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
SYMBOL
BU406
BU407
BU406
BU407
BU406
BU407
V CBO
VCEX
VCEO
VALUE
400
330
400
330
200
150
UNIT
V
V
V
VEB
6
IC
7
A
ICM
15
A
V
IB
4
A
Ptot
60
W
Tj
-55 to +150
°C
Tstg
-55 to +150
°C
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
ft
Cob
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC =
30 mA
MIN
IB = 0
TYP
MAX
140
V
5
VCE = 400 V
VBE = 0
BU406
VCE = 330 V
VBE = 0
BU407
5
Collector-emitter
VCE = 250 V
VBE = 0
BU406
0.1
cut-off current
VCE = 200 V
VBE = 0
BU407
0.1
VCE = 250 V
VBE = 0
TC = 150°C
BU406
1
VCE = 200 V
VBE = 0
TC = 150°C
BU407
1
VEB =
6V
IC = 0
Forward current
VCE =
10 V
IC =
transfer ratio
VCE =
10 V
IC = 0.5 A
IB =
0.5 A
IC =
5A
IB =
0.5 A
IC =
5A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
VCE =
5V
VCB =
20 V
4A
UNIT
mA
1
mA
(see Notes 2 and 3)
1
V
(see Notes 2 and 3)
1.2
V
(see Notes 2 and 3)
IC = 0.5 A
f = 1 MHz
IE = 0
f = 1 MHz
12
20
(see Note 4)
6
MHz
60
pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
2.08
°C/W
70
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
ts
Storage time
t(off)
Turn off time
TEST CONDITIONS
IC = 5 A
IB(end) = 0.5A
†
MIN
(see Figures 1 and 2)
MAX
2.7
UNIT
µs
750
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU406, BU407
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
V BB+
V cc = 24V
5.6 Ω
47 Ω
SET
IB
22 Ω
TIP32
100 Ω
+4V
7.5 Ω
240 µH
100 Ω
TIP32
BY205
Current
Probes
50 Ω
5 pF
INPUT
0
1 kΩ
2N5337
14.8 µH
TUT
OUTPUT
BY205
2N6191
TIP31
TIP31
TIP31
22 Ω
22 Ω
V BB-
Figure 1. Inductive-Load Switching Test Circuit
64 µs
42 µs
IB
I
B(end)
50%
0
t
s
IC
0.1 A
0
t off
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
Vfly
voltage V CE has risen 3 V into
V
CE
its flyback excursion.
0
3V
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCD124AA
70
TCD124AB
50
TC = 25°C
tp < 300 µs
d < 2%
tp < 300 µs
d < 2%
VCE = 5 V
TC = 100°C
hFE - Typical DC Current Gain
hFE - Typical DC Current Gain
60
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50
40
TC = 25°C
30
20
40
30
20
10
10
0
0·1
VCE = 1 V
VCE = 5 V
VCE = 10 V
TC = -55°C
1·0
0
0·1
10
IC - Collector Current - A
1·0
10
IC - Collector Current - A
Figure 3.
Figure 4.
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
d < 2%
0·7
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
IB = 0.5 A
0·2
0·1
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU406, BU407
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAD124AA
1·0
0·1
BU407
BU406
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BU406, BU407
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.