BU406, BU407 NPN SILICON POWER TRANSISTORS ● 7 A Continuous Collector Current ● 15 A Peak Collector Current ● 60 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE SYMBOL BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V VEB 6 IC 7 A ICM 15 A V IB 4 A Ptot 60 W Tj -55 to +150 °C Tstg -55 to +150 °C 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 TYP MAX 140 V 5 VCE = 400 V VBE = 0 BU406 VCE = 330 V VBE = 0 BU407 5 Collector-emitter VCE = 250 V VBE = 0 BU406 0.1 cut-off current VCE = 200 V VBE = 0 BU407 0.1 VCE = 250 V VBE = 0 TC = 150°C BU406 1 VCE = 200 V VBE = 0 TC = 150°C BU407 1 VEB = 6V IC = 0 Forward current VCE = 10 V IC = transfer ratio VCE = 10 V IC = 0.5 A IB = 0.5 A IC = 5A IB = 0.5 A IC = 5A Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VCE = 5V VCB = 20 V 4A UNIT mA 1 mA (see Notes 2 and 3) 1 V (see Notes 2 and 3) 1.2 V (see Notes 2 and 3) IC = 0.5 A f = 1 MHz IE = 0 f = 1 MHz 12 20 (see Note 4) 6 MHz 60 pF NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 2.08 °C/W 70 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † ts Storage time t(off) Turn off time TEST CONDITIONS IC = 5 A IB(end) = 0.5A † MIN (see Figures 1 and 2) MAX 2.7 UNIT µs 750 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU406, BU407 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION V BB+ V cc = 24V 5.6 Ω 47 Ω SET IB 22 Ω TIP32 100 Ω +4V 7.5 Ω 240 µH 100 Ω TIP32 BY205 Current Probes 50 Ω 5 pF INPUT 0 1 kΩ 2N5337 14.8 µH TUT OUTPUT BY205 2N6191 TIP31 TIP31 TIP31 22 Ω 22 Ω V BB- Figure 1. Inductive-Load Switching Test Circuit 64 µs 42 µs IB I B(end) 50% 0 t s IC 0.1 A 0 t off toff is the time for the collector current IC to decrease to 0.1 A after the collector to emitter Vfly voltage V CE has risen 3 V into V CE its flyback excursion. 0 3V Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BU406, BU407 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCD124AA 70 TCD124AB 50 TC = 25°C tp < 300 µs d < 2% tp < 300 µs d < 2% VCE = 5 V TC = 100°C hFE - Typical DC Current Gain hFE - Typical DC Current Gain 60 TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50 40 TC = 25°C 30 20 40 30 20 10 10 0 0·1 VCE = 1 V VCE = 5 V VCE = 10 V TC = -55°C 1·0 0 0·1 10 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 3. Figure 4. VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE TCD124AC 0·8 tp < 300 µs d < 2% 0·7 0·6 IC = 8 A IB = 2 A 0·5 0·4 0·3 IC = 4 A IB = 0.5 A 0·2 0·1 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BU406, BU407 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAD124AA 1·0 0·1 BU407 BU406 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 BU406, BU407 NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 0,64 0,41 2,90 2,40 5,28 4,88 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.