VISHAY VN2222L

VN0610L, VN10KLS, VN2222L
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs with Zener Gate
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
5 @ VGS = 10 V
0.8 to 2.5
0.27
5 @ VGS = 10 V
0.8 to 2.5
0.31
7.5 @ VGS = 10 V
0.6 to 2.5
0.23
VN0610L
VN10KLS
60
VN2222L
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
D Inductive Load Drivers
Zener Diode Input Protected
Low On-Resistance: 3 W
Ultralow Threshold: 1.2 V
Low Input Capacitance: 38 pF
Low Input and Output Leakage
Extra ESD Protection
Low Offset Voltage
Low-Voltage Operation
High-Speed, Easily Driven
Low Error Voltage
Device Marking
Front View
TO-226AA
(TO-92)
TO-92S
VN0610L
“S” VN
0610L
xxyy
S
VN2222L
G
“S” VN
2222L
xxyy
D
1
S
G
2
D
3
VN10KLS
“S” VN
10KLS
xxyy
2
“S” = Siliconix Logo
xxyy = Date Code
3
“S” = Siliconix Logo
xxyy = Date Code
Top View
Device Marking
Front View
1
Top View
VN0610L
VN2222L
VN10KLS
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN2222L
VN0610L
VN10KLS
Drain-Source Voltage
VDS
60
60
Gate-Source Voltage
VGS
15/–0.3
15/–0.3
0.27
0.31
0.17
0.20
1
1.0
0.8
0.9
0.32
0.4
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
ID
IDM
TA= 25_C
TA= 100_C
PD
RthJA
TJ, Tstg
156
139
–55 to 150
Unit
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
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11-1
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN0610L
VN10KLS
Symbol
Test Conditions
Typa
V(BR)DSS
VGS = 0 V, ID = 100 mA
120
60
VGS(th)
VDS = VGS, ID = 1 mA
1.2
0.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 15 V
1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Parameter
Min
VN2222L
Max
Min
2.5
0.6
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
100
VDS = 48 V, VGS = 0 V
Drain-Source On-Resistanceb
rDS(on)
TJ = 125_C
Common Source Output
Conductanceb
2.5
100
10
10
500
500
VDS = 10 V, VGS = 10 V
1
VGS = 5 V, ID = 0.2 A
4
7.5
3
5
7.5
5.6
9
13.5
VGS = 10 V, ID = 0.5 A
TJ = 125_C
Forward Transconductanceb
60
gfs
VDS = 10 V, ID = 0.5 A
300
gos
VDS = 7.5 V, ID = 0.05 A
0.2
0.75
0.75
100
V
nA
m
mA
A
7.5
W
100
mS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
38
60
60
16
25
25
2
5
5
7
10
10
9
10
10
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
ns
VNDP06
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
50
1.0
6V
VGS = 2.0 V
5V
0.8
VGS = 10 V
1.9 V
ID – Drain Current (A)
ID – Drain Current (mA)
40
30
1.8 V
20
1.6 V
1.5 V
10
0.6
4V
0.4
3V
0.2
1.4 V
1.2 V
2V
0
0
0
0.4
0.8
1.2
1.6
2.0
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.5
7
VDS = 15 V
6
rDS(on) – On-Resistance ( Ω )
0.4
ID – Drain Current (A)
TJ = –55_C
25_C
0.3
125_C
0.2
0.1
5
250 mA
4
3
500 mA
ID = 50 mA
2
1
0
0
0
1
2
3
4
0
5
8
12
16
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
5
20
2.25
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
rDS(on) – Drain-Source On-Resistance ( Ω )
4
VGS – Gate-Source Voltage (V)
4
VGS = 10 V
3
2
1
0
VGS = 10 V
2.00
1.75
ID = 0.5 A
1.50
0.1 A
1.25
1.00
0.75
0.50
0
0.2
0.4
0.6
ID – Drain Current (A)
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
0.8
1.0
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
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11-3
VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
100
VGS = 0 V
f = 1 MHz
C – Capacitance (pF)
ID – Drain Current (mA)
80
1
TJ = 150_C
0_C
100_C
25_C
0.1
60
Ciss
40
Coss
20
Crss
–55_C
0.01
0
0
0.25
0.5
0.75
1.0
1.25
1.5
0
1.75
VGS – Gate-to-Source Voltage (V)
20
30
50
40
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
100
15.0
ID = 0.5 A
VDD = 15 V
RL = 25 W
VGS = 0 to 10 V
12.5
VDS = 30 V
t – Switching Time (ns)
VGS – Gate-to-Source Voltage (V)
10
10.0
7.5
5.0
48 V
10
td(off)
tf
td(on)
2.5
tr
1
0
0
100
200
300
400
500
0.1
600
0.5
1.0
ID – Drain Current (A)
Qg – Total Gate Charge (pC)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
0.01
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
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11-4
Document Number: 70213
S-04279—Rev. F, 16-Jul-01