VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32 5 @ VGS = 10 V 0.8 to 3.0 0.18 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 7.5 @ VGS = 5 V 0.6 to 2.5 0.23 VN2222LM 7.5 @ VGS = 5 V 0.6 to 2.5 0.26 VN0605T 60 Features Benefits Applications Direct Logic-Level Interface: TTL/CMOS Solid State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Low On-Resistance: 2.5 Low Threshold: <2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage TO-206AC (TO-52) Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffering High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S S 1 G D TO-237 (Tab Drain) S 1 2 G 2 3 D 3 TO-236 (SOT-23) G 1 S 2 1 3 2 3 G D D Top View Top View Top View Top View VN10LE VN0610LL VN2222LL VN10LM VN2222LM VN0605T (V2)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70212. Siliconix S-52429—Rev. E, 28-Apr-97 1 VN10/0605/0610/2222 Series Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitivec Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Symbol VN10LEb VN10LM VN0605T VN0610LL VN2222LL VN2222LM VDS 60 60 60 60 60 60 VGS ID IDM TA= 25_C TA= 100_C Maximum Junction-to-Ambient PD RthJA Operating Junction and Storage Temperature Range 30 30 30 30 30 20 20 20 20 20 20 0.38 0.32 0.18 0.28 0.23 0.26 0.24 0.2 0.11 0.17 0.14 0.16 1.0 1.4 0.72 1.3 1.0 1.0 1.5 1.0 0.36 0.8 0.8 1.0 0.6 0.4 0.14 0.32 0.32 0.4 400 125 350 156 156 125 VGSM TJ, Tstg Unit V A W _C/ W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. tp 50 ms. Specificationsa Limits VN10LE VN10LM VN0610LL Parameter Symbol Test Conditions Typb Min Max VN0605T Min Max VN2222LL VN2222LM Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = 100 mA 70 VGS = 0 V, ID = 10 mA 70 VDS = VGS, ID = 1 mA 2.1 60 60 0.8 VDS = 0 V, VGS = 20 V Gate-Body Leakage Zero Gate-Voltage g Drain Current IGSS IDSS 60 2.5 0.8 100e V 3.0 0.6 100 100 500 TJ=125_C VDS = 0 V, VGS = 30 V 100 VDS = 50 V, VGS = 0 V 10 1.0 500 500 TJ= 125_C nA VDS = 48 V, VGS = 0 V 10 TJ= 125_C On-State Drain Currentc Drain-Source On-Resistancec ID(on) rDS(on) DS( ) gfs f Common Source Output Conductancec gos 2 mA 500 VDS = 10 V, VGS = 10 V 1000 VGS = 4.5 V, ID = 50 mA 4.5 VGS = 5 V, ID = 0.2 A 4.5 7.5 VGS = 10 V, ID = 0.5 A 2.4 5 5 7.5 4.4 9 10 13.5 TJ= 125_C Forward Transconductance c 2.5 VDS = 10 V, ID = 0.5 A 230 VDS = 10 V, ID = 0.2 A 180 VDS = 5 V, ID = 50 mA 500 750 500 750 mA 7.5 7.5 100 W 100 80 mS ms Siliconix S-52429—Rev. E, 28-Apr-97 VN10/0605/0610/2222 Series Specificationsa Limits VN10LE VN10LM VN0610LL Parameter Symbol Typb Min Test Conditions Max VN2222LL VN2222LM VN0605T Min Max Min Max Unit Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 22 60 60 60 11 25 25 25 2 5 5 5 W ^ W 7 10 10 7 10 10 W ^ 0.2 02 W 7 20 11 20 VDS =25 V, VGS = 0 V f = 1 MHz pF Switchingd Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Switching time is essentially independent of operating temperature. e. VN10LE only. VNBF06 Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 6V 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 0 0 1 2 3 4 3.5 V 3 V 2.5 V 2, 1 V 5 6 VDS – Drain-to-Source Voltage (V) Siliconix S-52429—Rev. E, 28-Apr-97 I D – Drain Current (A) I D – Drain Current (A) 0.8 TA = –55_C 25_C 0.6 125_C 0.4 0.2 0 0 1 2 3 4 5 6 7 8 VGS – Gate-to-Source Voltage (V) 3 VN10/0605/0610/2222 Series Typical Characteristics (25_C Unless Otherwise Noted) Capacitance On-Resistance vs. Drain Current 60 7 VGS = 0 V f = 1 MHz TJ = 25_C 50 rDS @ 5 V = VGS C – Capacitance (pF) rDS(on) – On-Resistance ( 6 5 4 3 rDS @ 10 V = VGS 2 40 30 Ciss 20 Coss 10 1 0 Crss 0 0 0.2 0.4 0.6 0.8 1.0 0 5 ID – Drain Current (A) 16 rDS(on) – On-Resistance ( (Normalized) VGS – Gate-to-Source Voltage (V) 25 30 35 VDS = 30 V ID = 0.5 A 12 8 4 0 400 800 1200 1600 2000 VGS = 10 V, rDS @ 0.5 A 1.5 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 0 –55 2400 –30 Source-Drain Diode Forward Voltage TJ = 125_C 0.100 TJ = 25_C 0.010 0.001 0 20 45 70 95 120 145 On-Resistance vs. Gate-to-Source Voltage 6 rDS(on) – On-Resistance ( 1.000 –5 TJ – Junction Temperature (_C) Qg – Total Gate Charge (pC) I S – Source Current (A) 20 On-Resistance vs. Junction Temperature 2.0 0 5 rDS = 50 mA 4 500 mA 3 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) 4 15 VDS – Drain-to-Source Voltage (V) Gate Charge 20 10 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 VGS – Gate-to-Source Voltage (V) Siliconix S-52429—Rev. E, 28-Apr-97 VN10/0605/0610/2222 Series Typical Characteristics (25_C Unless Otherwise Noted) Threshold Voltage 0.50 ID = 250 mA VGS(th) Variance (V) 0.25 –0.00 –0.25 –0.50 –0.75 –50 –25 0 25 50 75 100 125 150 TJ – Temperature (_C) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) Siliconix S-52429—Rev. E, 28-Apr-97 5