This product complies with the RoHS Directive (EU 2002/95/EC). DMC506E2 Silicon NPN epitaxial planar type For high-frequency amplification DMC206E2 in SMini6 type package Features Package High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini6-F3-B Basic Part Number Pin Name 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) Package dimension clicks here.→ Dual DSC2G02 (Individual) Packaging DMC506E20R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Click! 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) Marking Symbol: D2 Internal Connection (C1) 6 (B1) 5 (C2) 4 Tr2 Tr1 1 (E1) 2 (E2) 3 (B2) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V Collector-emitter voltage (Base open) VEBO IE = 10 µA, IC = 0 3 V Base-emitter voltage VBE VCE = 6 V, IC = 1 mA Forward current transfer ratio hFE VCE = 6 V, IC = 1 mA 65 Transition frequency fT VCE = 6 V, IC = 1 mA 450 Reverse transfer capacitance(Common emitter) Cre Power gain Noise figure 0.72 V 260 650 MHz VCE = 6 V, IC = 1 mA, f = 10.7 MHz 0.6 pF PG VCE = 6 V, IC = 1 mA, f = 100 MHz 24 dB NF VCE = 6 V, IC = 1 mA, f = 100 MHz 3.3 dB Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2012 Ver. CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DMC506E2 DMC506E2_IC-VCE DMC506E2_PT-Ta PT Ta 200 300 50 40 80 120 160 90 µA 80 µA 60 µA 50 µA 40 µA 4 0 200 70 µA 8 Ambient temperature Ta (°C) 30 µA 0 4 Ta = 85°C 10−1 −30°C 102 VCE = 6 V 25°C 16 Ta = 85°C −30°C 12 8 4 0 0 0.2 0.4 0.6 DMC506E2_fT-IC fT IC Transition frequency fT (MHz) VCE = 6 V Ta = 25°C 1 200 800 400 1 10 0.8 102 Collector current IC (mA) Ver. CED 1 10 102 Collector current IC (mA) Cob VCB 1.0 Base-emitter voltage VBE (V) Collector current IC (mA) 0 10−1 50 DMC506E2_Cob-VCB 25°C 1 600 −30°C 0 10−1 12 20 Collector current IC (mA) 1 10 25°C 100 IC VBE IC / IB = 10 1 Ta = 85°C 150 DMC506E2_IC-VBE VCE(sat) IC 10−2 10−1 200 Collector-emitter voltage VCE (V) DMC506E2_VCEsat-IC 10 8 250 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 100 µA 12 Forward current transfer ratio hFE Collector current IC (mA) Total power dissipation PT (mW) 100 VCE = 6 V IB = 120 µA 110 µA 150 0 Collector-emitter saturation voltage VCE(sat) (V) hFE IC 16 Ta = 25°C 2 DMC506E2_hFE-IC IC VCE 2.0 IE = 0 f = 1 MHz Ta = 25°C 1.6 1.2 0.8 0.4 0 1 10 102 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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