PANASONIC DSC9G02C0L

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G02 in SSMini3 type package
 Features
 Package
 High forward current transfer ratio hFE with excellent linearity
 High transition frequency fT
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package

Code
SSMini3-F3-B

Pin Name
1. Base
2. Emitter
3. Collector
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Marking Symbol: C5
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
30
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
3
V
Base-emitter voltage
VBE
VCE = 6 V, IC = 1 mA
Forward current transfer ratio *
hFE
VCE = 6 V, IC = 1 mA
65
Transition frequency
fT
VCE = 6 V, IC = 1 mA
450
Reverse transfer capacitance
(Common emitter)
Cre
Power gain
Noise figure
0.72
V
260

650
MHz
VCE = 6 V, IC = 1 mA , f = 10.7 MHz
0.6
pF
PG
VCE = 6 V, IC = 1 mA , f = 100 MHz
24
dB
NF
VCE = 6 V, IC = 1 mA , f = 100 MHz
3.3
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
C
D
0
Rank
C
D
No-rank
hFE
65 to 160
100 to 260
65 to 260
Marking Symbol
C5C
C5D
C5
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: September 2010
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9G02
DSC9G02_PC-Ta
DSC9G02_IC-VCE
PC  Ta
IC  VCE
100
75
50
25
0
40
80
120
160
16
IB = 120 µA
8
4
0
200
110 µA
100 µA
90 µA
80 µA
70 µA
60 µA
50 µA
40 µA
30 µA
12
Ambient temperature Ta (°C)
0
2
4
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
1
Ta = 85°C
−30°C
1
10
102
Collector current IC (mA)
Ta = 85°C
10
−30°C
5
0
0
0.2
0.4
Transition frequency fT (MHz)
1 200
800
400
10
102
Collector current IC (mA)
2
0.6
0.8
1.0
Base-emitter voltage VBE (V)
VCE = 6 V
Ta = 25°C
1
−30°C
80
40
Ver. AED
1
10
102
Collector current IC (mA)
Cob  VCB
15
fT  IC
0
10−1
25°C
DSC9G02_Cob-VCB
25°C
DSC9G02_fT-IC
1 600
120
0
10−1
12
20
VCE = 6 V
10−2
10−1
Ta = 85°C
IC  VBE
IC / IB = 10
25°C
10
160
DSC9G02_IC-VBE
VCE(sat)  IC
10−1
8
VCE = 6 V
Collector-emitter voltage VCE (V)
DSC9G02_VCEsat-IC
10
6
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
Forward current transfer ratio hFE
Ta = 25°C
125
hFE  IC
200
20
Collector current IC (mA)
Collector power dissipation PC (mW)
150
DSC9G02_hFE-IC
1.2
2.0
IE = 0
f = 1 MHz
Ta = 25°C
1.6
1.2
0.8
0.4
0
1
10
100
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9G02
SSMini3-F3-B
Unit: mm
+0.05
1.60 −0.03
+0.05
0.375 ±0.05
0.26 −0.02
(5°)
1.60 ±0.05
0.85 −0.03
+0.05
3
1
2
(0.50)
+0.05
0.13 −0.02
(0.50)
(0.45)
1.00 ±0.05
0 to 0.10
0.70 −0.03
+0.05
(5°)
Ver. AED
3
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