FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) PC Power Dissipation(TC=25°C) TJ TSTG 3 A 0.5 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 50µA, IE = 0 50 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 30 V 6 BVEBO Emitter-Base Breakdown Voltage IE = 50µA, IC = 0 ICEO Collector Cut-off Current VCE = 40V, VB = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE DC Current Gain VCE = 2V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 1.5, IB = 0.15A 0.45 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5, IB = 0.15A 1.2 V ©2005 Fairchild Semiconductor Corporation FJC1963 Rev. B1 1 120 V 0.5 µA 0.5 µA 560 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor July 2005 Classification Q R S hFE 120 ~ 270 180 ~ 390 280 ~ 560 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1963 FJC1963 SOT-89 13” -- 4,000 FJC1963 Rev. B1 2 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic Figure 2. DC Current Gain 1400 1000 VCE = 2V IB = 6mA 1000 hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT IB = 7mA 1200 IB = 5mA 800 IB = 4mA 600 IB = 3mA 400 IB = 2mA o Ta = 125 C o Ta = 25 C 100 o Ta = - 40 C 200 IB = 1mA 0 0 2 4 6 8 10 12 10 10m 14 100m VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 4. Base-Emitter Saturation Voltage 10 IC = 10IB 1 o Ta = 125 C 100m o Ta = 25 C o Ta = - 40 C 10m 1m 10m 100m 1 IC = 10IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 1 o Ta = - 40 C o Ta = 25 C o Ta = 125 C 100m 10m 10 100m IC [A], COLLECTOR CURRENT 10 Figure 6. Power Derating 0.7 PC [W], COLLECTOR POWER DISSIPATION 1.8 VCE = 2V 1.6 IC [A], COLLECTOR CURRENT 1 IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage 1.4 1.2 1.0 0.8 0.6 0.4 o 125 C 0.2 0.2 0.4 o o 25 C 0.6 - 40 C 0.8 1.0 1.2 1.4 VBE [V], BASE-EMITTER VOLTAGE FJC1963 Rev. B1 10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 0.0 0.0 1 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 o Ta [ C], AMIBIENT TEMPERATURE 3 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJC1963 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters FJC1963 Rev. B1 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 FJC1963 Rev. B1 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor TRADEMARKS