KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Ratings Units V VCBO Collector-Base Voltage -30 VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A IB Base Current -0.3 A PC P C* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C 2 * Mounted on Ceramic Board (250mm × 0.8mm) Electrical Characteristics T Symbol a= 25°C unless otherwise noted Parameter BVCEO Collector-Emitter Breakdown Voltage BVEBO ICBO Test Condition Min. Typ. Max. Units IC = -10mA, IB = 0 -30 Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 Collector Cut-off Current VCB = -30V, IE = 0 IEBO Emitter Cut-off Current VBE = -5V, IC = 0 hFE DC Current Gain VCE = -2V, IC = -500mA VCE (sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -30mA -2.0 V VBE (on) Base-Emitter On Voltage VCE = -2V, IC = -500mA -1.0 V fT Current Gain Bandwidth Product VCE = -2V, IC = -500mA Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz ©2005 Fairchild Semiconductor Corporation KSA1203 Rev. B3 1 V V 100 -100 nA -100 nA 320 120 MHz 50 pF www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor July 2005 Classification O Y hFE 100 ~ 200 160 ~ 320 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1203 KSA1203 SOT-89 13” -- 4,000 KSA1203 Rev. B3 2 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor hFE Classification Figure 1. Static Characteristic Figure 2. DC Current Gain -1.6 1000 IB =-10mA VCE = -2V IB =-8mA -1.2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -1.4 IB =-6mA -1.0 IB =-4mA -0.8 IB =-3mA -0.6 IB =-2mA -0.4 100 IB =-1mA -0.2 IB =0mA -0 -2 -4 -6 -8 -10 -12 10 -14 -16 -1 -10 Figure 3. Collector-Emitter Saturation Voltage -1.6 IC = 50IB VCE = -2V -1.4 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE -10000 Figure 4. Base-Emitter On Voltage -10 -1 -0.1 -1 -10 -100 -1000 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -10000 -0.2 Figure 5. Safe Operating Area s 1m s m 10 VCEOMAX -0.1 -0.01 -0.1 -1 -10 -1.2 -1.4 -1.6 175 200 1.2 M 1.0 ou n te d 0.8 on 0.6 Ce ra m ic 0.4 Bo ar d (2 50 0.2 0 -100 25 50 75 100 m m 2 X0 . 8m 125 m ) 150 o Ta[ C], AMBIENT TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE KSA1203 Rev. B3 -1.0 1.4 PC[W], POWER DISSIPATION ICMAX(Pulse) 10 0m s 1s -0.8 1.6 o Ta=25 C Single Pulse ICMAX(DC) -0.6 Figure 6. Power Derating -10 -1 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -100 3 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor Typical Performance Characteristics KSA1203 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters KSA1203 Rev. B3 4 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 KSA1203 Rev. B3 www.fairchildsemi.com KSA1203 PNP Epitaxial Silicon Transistor TRADEMARKS