FAIRCHILD MPSW3725

MPSW3725
MPSW3725
C
TO-226
B
E
NPN Transistor
This device is designed for high current, low impedance line
driver applications. Sourced from Process 26.
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1999 Fairchild Semiconductor Corporation
Max
Units
MPSW3725
1.0
8.0
125
W
mW/°C
°C/W
50
°C/W
(continued)
Electrical Characteristics
Symbol
TA= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 10 mA, IB = 0
40
V
IC = 10 µA, VBE = 0
60
V
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
IC = 100 µA, ICE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 100°C
V(BR)CES
V
100
10
nA
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC=100mA,VCE=1.0V,TA=-55°C
IC = 300 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC=500mA,VCE=1.0V,TA=-55°C
IC = 800 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
30
60
30
40
35
20
20
25
180
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
250
MHz
25
pF
100
pF
SWITCHING CHARACTERISTICS
ton
Turn-on Time
VCC = 30 V, VBE = 3.8 V,
22
ns
td
Delay Time
IC = 500 mA, IB1 = 50 mA
10
ns
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
12
ns
VCC = 30 V, IC = 500mA
250
ns
IB1 = IB2 = 50 mA
235
ns
15
ns
MPSW3725
NPN Transistor
(continued)
200
VCESAT- COLLE CTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VCE = 1.0V
150
125 °C
100
25 °C
- 40 °C
50
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
V BESAT- BASE- EMITTER VOLTAGE( V)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
1000
V BE(O N)- BASE-EMITTER ON VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
0
1
10
100
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
V CE = 1.0V
0.8
- 40 °C
0.6
25 °C
0.4
125 °C
0.2
0.1
25
150
100
100
50
10
1
50
75
100
125
T A - AM BIENT TE MPE RATURE (° C)
F = 1 MHz
100
V CB = 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
1
10
I C - COLLECTOR CURRENT (mA)
Input / Output Capacitance
vs Reverse Bias
Collector-Cutoff Current
vs Ambient Temperature
0.1
25
1000
150
C ibo
50
10
25
5
1
0.1
C obo
1
10
REVERSE BIAS VOLTAGE (V)
50
MPSW3725
NPN Transistor
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
1
10
PD - POWER DISSIPATION (W)
V CE - COLLECTOR VOLTAGE (V)
Contours of Constant
Bandwidth Product (f T)
450 MHz
400 MHz
1
350 MHz
250 MHz
100 MHz
0.1
10
50
100
500
I C - COLLECTOR CURRENT (mA)
1000
0.75
TO-226
0.5
0.25
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
MPSW3725
NPN Transistor
(continued)
Storage Time vs. Turn On
and Turn Off Base Currents
300
t s = 20 ns
200
35 ns
45 ns
100
I C = 800 mA
VCC = 30V
0
0
100
200
I B1 - TURN ON BASE CURRENT (mA)
300
I B2 - TURN OFF BASE CURRENT (mA)
(continued)
Storage Time vs. Turn On
and Turn Off Base Currents
200
I C = 500 mA
VCC = 30V
150
100
40
t s = 20 ns
30
40 ns
60 ns
10
0
80 ns
I C = 100 mA
VCC = 30V
0
10
20
30
40
IB1 - TURN ON BASE CURRENT (mA)
50 ns
40 ns
50
0
0
50
100
150
I B1 - TURN ON BASE CURRENT (mA)
200
Rise Time vs. Collector and
Turn On Base Currents
50
20
25 ns
t s = 20 ns
Storage Time vs. Turn On
and Turn Off Base Currents
50
I B1 - TURN ON BASE CURRENT (mA)
I B2- TURN OFF BASE CURRENT (mA)
I B2- TURN OFF BASE CURRENT (mA)
Typical Characteristics
100
t r = 3 ns
50
5 ns
40
30
8 ns
20
15 ns
10
50
VCC = 30V
100
200
300
I C - COLLECTOR CURRENT (mA)
400 500
MPSW3725
NPN Transistor
(continued)
(continued)
I B2 - TURN OFF BASE CURRENT (mA)
Fall Time vs. Turn On
and Turn Off Base Currents
200
t f = 5 ns
6 ns
150
7 ns
100
10 ns
50
50
100
150
I B1 - TURN ON BASE CURRENT (mA)
TURN OFF BASE CURRENT (mA)
0
B2-
0
I C = 500 mA
VCC = 30V
I
I B2- TURN OFF BASE CURRENT (mA)
Typical Characteristics
200
Fall Time vs. Turn On
and Turn Off Base Currents
300
I C = 800 mA
VCC = 30V
200
t f = 10 ns
15 ns
100
20 ns
0
0
100
200
I B1 - TURN ON BASE CURRENT (mA)
Fall Time vs. Turn On
and Turn Off Base Currents
50
I C = 100 mA
VCC = 30V
40
t f = 12 ns
30
15 ns
20
30 ns
10
0
0
10
20
30
40
I B1 - TURN ON BASE CURRENT (mA)
50
300
MPSW3725
NPN Transistor
(continued)
Test Circuit
- 3.8 V
30 V
15 Ω
VIN = 9.7 V
tr and tf ≤ 1 ns
PW = 1.0 µs
ZIN = 50 Ω
Duty Cycle < 2%
VOUT
Ω
1.0 KΩ
1.0 µF
43 Ω
10 µF
VIN
100 Ω
62 Ω
FIGURE 1: Switching Time Test Circuit
(IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA)
To sampling scope
tr < 1.0 ns
ZIN ≥ 100 KΩ
MPSW3725
NPN Transistor
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G