SAMWIN SW2N60 General Description Features zN-Channel MOSFET zBVDSS (Minimum) zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. D G TO-252 TO-220 S Absolute Maximum Ratings Symbol Parameter Value TO-220 VDSS ID IDM Drain to Source Voltage 2.0 1.8 A Continuous Drain Current (@Tc=100℃) 1.67 1.47 A 8.0 7.2 A Drain Current Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) TSTG,TJ TL V Continuous Drain Current (@Tc=25℃) Gate to Source Voltage PD TO-251(2) 600 VGS dv/dt Units ±30 V 110 mJ 5.0 4.2 5.0 mJ V/ns Total Power Dissipation (@Tc=25℃) 50 42 W Derating Factor above 25℃ 0.4 0.34 W/℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. -55~+150 ℃ 300 ℃ Thermal Characteristics Value Symbol Parameter Units TO-220 TO-251(2) 2.4 2.9 ℃/ W RθJC Thermal Resistance, Junction-to-Case Max RθCS Thermal Resistance, Case-to-Sink TYP. 0.5 ℃/ W RθJA Thermal Resistance, Junction-to-Ambient Max 62.5 ℃/ W 1/6 REV0.2 04.11.1 SAMWIN Electrical Characteristics SW2N60 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Typ Max 600 - - V - 0.17 - V/℃ - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ IDSS Drain-Source Leakage Current VDS=600V, VGS=0V VDS=480V, Tc=125℃ Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA IGSS On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=0.9A - - 5 ohm - - ＊ 520 - - 50 - - 11 - - ＊ 60 - - ＊ 94 - - ＊ 140 - - ＊ 74 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) Turn-on Delay Time VDD=300V,ID=1.8A RG=50ohm Rise Time ns Turn-off Delay Time (Note4,5) tf Qg Qgs Qgd Fall Time Total Gate Charge Gate-Source Charge - - 20 VDS=480V,VGS=10V, ID=1.8A - 3 - (Note4,5) - 5 - Gate-Drain Charge (Miller Charge) nc Source-Drain Diode Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current Test Conditions TO-220 TO-251(2) 2.0 1.8 8.0 7.2 Integral Reverse p-n Junction Diode in the MOSFET MIN TYP MAX Unit. A VSD Diode Forward Voltage IS=1.8A,VGS=0V - - 1.5 V trr Reverse Recovery Time - 250 - ns Qrr Reverse Recovery Charge IS=1.8A,VGS=0V, dIF/dt=100A/us - 1.5 - uc ※NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=62.2mH,IAS=1.8A,VDD=50V,RG=0ohm, Starting TJ=25℃ 3. ISD≤1.8A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. 6. The Max data with “＊” will be reduce soon. REV0.2 2/6 04.11.1 SW2N60 VGS top: 15V 10V 9V 8V 7V 6V 5.5V 5V 4.5V bottom:4.0V ID,Drain Current [A] ID,Drain Current [A] SAMWIN 4.0V 0 10 10 0 o 150 C o 25 C Note: 1.VDS=50V -1 10 10 0 2 1 10 Vds,Drain-to-Source voltage [V] 2.250us pulse test. -1 10 4 6 8 10 VGS, Gate-Source Voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 7 VGS=20V IDR,Reverse Drain Current[A] RDS(ON) Drain-Source On-Resistance[ohm] 8 VGS=10V 6 5 4 1 10 150℃ 25℃ 0 10 3 ∗ Note: 1.vGS=0v 2.250us test -1 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 4.0 0.2 0.4 0.6 ID, Drain Current[A] 0.8 1.0 1.2 1.4 1.6 VSD,Source-Drain Voltage[V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature 500 12 Ciss = Cgs+Cgd(Cds=shorted) VGS,Gate-to-Source Voltage [V] Coss= Cds+Cgd Crss = Cgd 400 Capacitance [pF] Ciss 300 Coss Note: 200 1.VGS=0V Crss 2.f=1MHz. 100 10 VDS=480V VDS=300V 8 VDS=120V 6 4 2 Note:ID=1.8A 0 0 -1 10 0 10 0 1 10 5 10 15 20 QG,Total Gate Charge [nC] VDC,Drain-Source Voltage [V] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitive) 3/6 REV0.2 04.11.1 SAMWIN SW2N60 4.0 3.5 RDs(on)(Normalized) 1.1 1.0 0.9 ∗ Note: Drain-Source On-Resistance BVDSS[Normalized] Drain-Source Breakdown Voltage 1.2 3.0 2.5 2.0 1.5 1.0 ∗Note: 0.5 1.VGS=0V 1.VGS=10V 2.ID=250uA 0.8 -100 -50 0 50 100 150 2.ID=0.9A 0.0 -100 200 -50 0 o TJ,Junction Temperatur [ C] 50 100 150 o TJ,Junction Temperature[ C] Fig 8. On-Resistance Variation vs. Junction Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature 2 Operation In This Area Limted By RDS(ON) ID, Drain Current[A] 100us ID, Drain Current[A] 1 10 1ms 0 10 10ms 1 -1 10 ∗Note: 1.Tc=25°C 2.Tj=150°C 3.Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 75 Z (t),Thermal Response Fig9. Maximum Safe Operating 150 Fig 10. Maximum Drain Current Vs. Case Temperature 0 .5 0 0 .2 0 .1 0 .0 5 -1 0 .0 2 θJC 10 125 o VD,Drain-Source Voltage[V] 10 100 Tc,Case Temperature [ C] S IN G L E P U L S E 0 .0 1 ∗ N o te : 1 .Z o Θ JC (t)= 2 .9 C /w M a x 2 .D u ty F a c to r ,D = t1 /t2 3 .T j- T c = P D M * Z Θ J C ( t ) 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 ,S q u a r e W a v e P u ls e D u r a tio n ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.2 04.11.1 SAMWIN SW2N60 VGS Same Type as DUT 50KΩ Qg 10V 200nF 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDS VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 04.11.1 SAMWIN SW2N60 + DUT VDS __ L Driver VDD RG Same Type as DUT VGS ● ● VGS (Driver) dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.2 04.11.1