SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. : 400 V : 0.55 ohm : 10A : 45 nc : 134 W D G S Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain to Source Voltage 400 V Continuous Drain Current (@Tc=25℃) 10 A Continuous Drain Current (@Tc=100℃) 6.3 A 40 A ±30 V ID IDM Drain Current Pulsed (Note 1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Total Power Dissipation (@Tc=25℃) 134 W Derating Factor above 25℃ 1.08 W/℃ -55~+150 ℃ 300 ℃ dv/dt PD TSTG,TJ TL Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol Parameter Units Min Typ Max R JC Thermal Resistance, Junction-to-Case - - 0.93 ℃/ W R CS Thermal Resistance, Case-to-Sink - 0.5 - ℃/ W R JA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/ W 1/6 REV0.2 04.11.1 SAMWIN Electrical Characteristics SW740 (Tc=25℃ unless otherwise noted) Value Symbol Parameter Test Conditions Units Min Typ Max 400 - - V - 0.4 - V/℃ - - 1 uA Off Characteristics BVDSS Drain- Source Breakdown Voltage VGS=0V,ID=250uA △BVDSS/△ Tj Breakdown Voltage Temperature coefficient ID=250uA,referenced to 25℃ VDS=400V, VGS=0V IDSS IGSS Drain-Source Leakage Current VDS=320V, Tc=125℃ Gate-Source Leakage Current VGS=30V,VDS=0V - - 100 nA Gate-Source Leakage Reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V - 0.46 0.55 ohm - 1450 1800 - 145 200 - 35 45 - 30 50 - 60 150 - 150 300 - 60 150 - 45 55 - 9 - - 20 - Min. Typ. Max. Integral Reverse p-n Junction Diode in the MOSFET - - 10 - - 40 On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA RDS(ON) Static Drain-Source On-state Resistance VGS=10V,ID=5A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time VDD=200V,ID=10A RG=50ohm (Note4,5) Fall Time Total Gate Charge Gate-Source Charge VDS=320V,VGS=10V, ID=10A (Note4,5) Gate-Drain Charge (Miller Charge) ns nc Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Unit. IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage IS=10A,VGS=0V - - 1.5 V trr Reverse Recovery Time - 330 - ns Qrr Reverse Recovery Charge IS=10A,VGS=0V, dIF/dt=100A/us - 3.57 - uc NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=18.6mH,IAS=10A,VDD=50V,RG=0ohm, Starting TJ=25℃ 3. ISD≤10A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. REV0.2 A 2/6 04.11.1 SAMWIN ID,Drain Current [A] VGS top: 15V 10V 9V 8V 7V 6V 5.5V bottom:5V 10 ID ,Drain Current [A] 1 10 SW740 0 10 o 150 C o 25 C 1 Note: 1.VDS=50V 2.250us pulse test. 0.1 -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS,Drain-to-Source voltage [V] Fig 1. On-State Characteristics Fig 2. Transfer Characteristics 2.4 2.0 10 VGS=10V 1.6 VGS=20V o o 25 C 150 C 1.2 1 0.8 0.4 Note: 1.vGS=0v o Note:TJ=25 C 2.250us test 0.1 0.2 0.0 0 5 10 15 20 25 30 35 0.4 0.6 0.8 1.0 1.2 1.4 VSD,Source-Drain Voltage[V] ID, Drain Current[A] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature 3000 12 Ciss = Cgs+Cgd(Cds=shorted) Coss= Cds+Cgd 2500 VDS=320V 10 Crss = Cgd VDS=200V Ciss 2000 8 VDS=80V Coss 1500 6 Note: 1000 Crss 4 1.VGS=0V 2.f=1MHz. 500 2 Note:ID=10A 0 0.1 0 1 10 0 VDS,Drain-Source Voltage [V] 5 10 15 20 25 30 35 40 45 QG,Total Gate Charge [nC] Fig 6. Gate Charge Characteristics Fig 5. Capacitance Characteristics (Non-Repetitve) 3/6 REV0.2 04.11.1 SAMWIN SW740 BVDSS [Normalized] Drain-Source Breakdown Voltage 1.2 3.0 2.5 1.1 2.0 1.0 1.5 1.0 0.9 Note: 1.VGS=0V 2.ID=250uA 0.8 -100 -50 0 50 100 150 Note: 1.VGS=10V 0.5 2.ID=5A 0.0 -100 200 -50 0 50 100 150 200 o TJ,Junction Temperature[ C] o TJ,Junction Temperatur [ C] Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature 2 10 10 Operation In This Area Limted By RDS(ON) ID , Drain Current[A] 8 10us 1 100us 10 6 1ms 10ms 4 0 10 Note: 1.Tc=25 C 2.Tj=150 C 3.Single Pulse -1 10 0 10 2 1 2 10 0 25 3 10 10 50 75 100 125 150 o VD,Drain-Source Voltage[V] Tc,Case Temperature [ C] Fig9. Maximum Safe Operating Fig 10. Maximum Drain Current Vs. Case Temperature 1 D = 0.5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 N o te: o 1 .Z J C (t )= 0 .9 3 C /w M a x 0 .0 1 s in g l e p u ls e 2 .D u ty F a c t o r ,D = t1 /t2 3 .T j-T c = P D M * Z J C (t ) 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 t 1 ,S q u a r e W a v e P u ls e D u r a t io n ( s e c ) Fig 11. Transient Thermal Response Curve 4/6 REV0.2 04.11.1 SAMWIN 200nF SW740 VGS Same Type as DUT 50KΩ Qg 10V 300nF Qgd Qgs VDS VGS DUT 1mA Charge Fig 12. Gate Charge test Circuit & Waveforms RL VDS VDD (0.5 rated VDS) 10V Pulse Generator RG DUT VDS Vin 90% 10% tf td(on) tr ton td(off) toff Fig 13. Switching test Circuit & Waveforms L VDS 1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD VDD BVDSS IAS RG VDD DUT ID(t) VDS(t) 10V tp Time Fig 14. Unclamped Inductive Switching test Circuit & Waveforms 5/6 REV0.2 04.11.1 SAMWIN SW740 + DUT VDS __ L Driver RG VGS ● ● VGS (Driver) VDD Same Type as DUT dv/dt controlled by RG Is controlled by pulse period Gate Pulse Width D = --------------------------Gate Pulse Period 10V IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms 6/6 REV0.2 04.11.1