FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • • • • • • Application 50A, 250V, RDS(on) = 36.3mΩ @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant • PDP application D G G DS TO-220 S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage Ratings Unit 250 V ± 30 V 50 31.3 A A (Note 1) See Figure 9 A 145 mJ VGS Gate-Source voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy (Note 2) (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 4.5 V/ns 260 2.1 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Min Max Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter -- 0.48 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDP2710 Rev. A 1 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET November 2007 Device Marking Device Package Reel Size Tape Width Quantity FDP2710 FDP2710 TO-220 - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V,TC = 125°C --- --- 10 500 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 4.0 5.0 V -- 36.3 42.5 mΩ -- 63 -- S -- 5470 7280 pF -- 426 570 pF -- 97 146 pF -- 80 170 ns -- 252 515 ns -- 112 235 ns On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A gFS Forward Transconductance VDS = 10V, ID = 25A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 50A VGS = 10V, RGEN = 25Ω (Note 4, 5) VDS = 125V, ID = 50A VGS = 10V (Note 4, 5) -- 154 320 ns -- 78 101 nC -- 34 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A -- -- 1.2 V trr Reverse Recovery Time -- 163 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 50A dIF/dt =100A/μs -- 1.3 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP2710 Rev. A 2 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics ID,Drain Current[A] 100 Figure 2. Transfer Characteristics 250 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 o 150 C ID,Drain Current[A] 500 10 o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 1 VDS,Drain-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.07 150 100 * Notes : IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1. VGS=0V 0.06 0.05 VGS = 10V 0.04 VGS = 20V 0.03 2. 250μs Pulse Test o TA = 150 C 10 o TA = 25 C o 0.02 * Note : TJ = 25 C 0 25 50 75 100 ID, Drain Current [A] 125 1 0.2 150 Figure 5. Capacitance Characteristics 6000 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss 3000 * Note: 1. VGS = 0V 2. f = 1MHz Crss 0 -1 10 FDP2710 Rev. A 0 1.2 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 9000 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1 10 10 VDS, Drain-Source Voltage [V] VDS = 50V 3 VDS = 200V 6 4 2 0 30 VDS = 125V 8 * Note : ID = 50A 0 10 20 30 40 50 60 Qg, Total Gate Charge [nC] 70 80 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] * Notes : 1. VGS = 10V 2. ID = 25A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 60 500 100 50 ID, Drain Current [A] 100μs Drain Current, ID [A] 1 0 -100 200 Figure 9. Maximum Safe Operating Area 10 1ms 1 Operation in This Area is Limited by R DS(on) 10 ms * Notes : 0.1 o DC 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 40 30 20 10 o 0.01 2 0 25 400 10 100 Drain-Source Voltage, VDS [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0 0.5 10 -1 0.2 PDM 0.1 t1 0.05 10 -2 0.02 0.01 t2 * Notes : o 1. Zθ JC(t) = 0.48 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) Single pulse 10 -3 10 -5 10 -4 -3 10 10 -2 -1 10 0 10 10 1 Rectangular Pulse Duration [sec] FDP2710 Rev. A 4 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics (Continued) FDP2710 250V N-Channel PowerTrench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP2710 Rev. A 5 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP2710 Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FDP2710 Rev. A 7 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET Mechanical Dimensions The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDP2710 Rev. A 8 www.fairchildsemi.com FDP2710 250V N-Channel PowerTrench MOSFET TRADEMARKS