FDI025N06 tm ® N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability Application • RoHS compliant • DC to DC convertors / Synchronous Rectification D G TO-262 G D S FDI Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage A A - Pulsed Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 1) 1060 A (Note 2) 2531 mJ 3.5 V/ns (Note 3) (TC = 25oC) 395 W - Derate above 25oC 2.6 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL V 190* -Continuous (TC = 100oC) Drain Current ±20 265* Drain Current IDM Units V -Continuous (TC = 25oC) ID EAS Ratings 60 -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.38 RθCS Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDI025N06 Rev. A 1 Units o C/W www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET June 2008 Device Marking FDI025N06 Device FDI025N06 Package TO-262 Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V - 0.04 - V/oC µA Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TC= 25oC IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V - - 1 VDS = 60V, VGS = 0V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 1.9 2.5 mΩ - 200 - S o ID = 250µA, Referenced to 25 C nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) - 11190 14885 pF - 1610 2140 pF - 750 1125 pF - 174 226 nC - 54 - nC - 50 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 25Ω (Note 4, 5) - 134 278 ns - 324 658 ns - 348 706 ns - 250 510 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 265 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 1060 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time - 69 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/µs - 152 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDI025N06 Rev. A 2 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 1000 700 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 100 *Notes: 1. VDS = 20V 2. 250µs Pulse Test ID,Drain Current[A] ID,Drain Current[A] Figure 2. Transfer Characteristics 10 100 o 175 C o 25 C o -55 C 10 *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 1 0.01 0.1 VDS,Drain-Source Voltage[V] 1 1 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 VGS,Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 2.5 VGS = 10V 2.0 VGS = 20V 1.5 o o 175 C 100 o 25 C 10 *Notes: 1. VGS = 0V *Note: TC = 25 C 2. 250µs Pulse Test 1 0.0 1.0 0 100 200 300 ID, Drain Current [A] 400 Figure 5. Capacitance Characteristics 1.4 10 *Note: 1. VGS = 0V 2. f = 1MHz VGS, Gate-Source Voltage [V] Ciss 12000 Coss 8000 4000 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 16000 Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.0 RDS(ON) [mΩ], Drain-Source On-Resistance 3 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss VDS = 15V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 75A 0 0.1 FDI025N06 Rev. A 0 1 10 VDS, Drain-Source Voltage [V] 0 60 3 40 80 120 160 Qg, Total Gate Charge [nC] 200 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 *Notes: 1. VGS = 0V 2. ID = 10mA 0.95 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.6 1.2 0.8 *Notes: 1. VGS = 10V 2. ID = 75A 0.4 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 1000 250 100µs 100 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 10µs 1ms 10ms DC *Notes: o 1. TC = 25 C 1 o 2. TJ = 175 C 3. Single Pulse 150 Limited by package 100 50 0.1 1 200 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125o 150 TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 *Notes: 0.02 0.01 Single pulse t2 o 1. ZθJC(t) = 0.38 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 0.005 -5 10 FDI025N06 Rev. A PDM 0.1 0.05 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDI025N06 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDI025N06 Rev. A 5 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDI025N06 Rev. A 6 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET Mechanical Dimensions Dimensions in Millimeters FDI025N06 Rev. A 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDI025N06 Rev. A 8 www.fairchildsemi.com FDI025N06 N-Channel PowerTrench® MOSFET TRADEMARKS