FDB2614 tm 200V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • • • • • 62A, 200V, RDS(on) = 22.9mΩ @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability Application • PDP application D D G G S S Absolute Maximum Ratings Symbol Parameter Ratings Unit 200 V ± 30 V 62 39.3 A A (Note 1) see Figure 9 A Single Pulsed Avalanche Energy (Note 2) 145 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed EAS 4.5 V/ns 260 2.1 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Min. Max. Unit 0.48 °C/W RθJC Thermal Resistance, Junction-to-Case -- RθJA* Thermal Resistance, Junction-to-Ambient* -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W *When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB2614 Rev. A 1 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET November 2006 Device Marking Device FDB2614 Reel Size Tape Width Quantity 330mm 24mm 800 2 FDB2614 Electrical Characteristics Symbol Package D -PAK TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.2 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C --- --- 1 500 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 4.0 5.0 V -- 22.9 27 mΩ -- 72 -- S -- 5435 7230 pF -- 505 675 pF -- 110 165 pF -- 77 165 ns -- 284 560 ns -- 103 220 ns -- 162 335 ns -- 76 99 nC -- 35 -- nC -- 18 -- nC On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 31A gFS Forward Transconductance VDS = 10V, ID = 31A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100V, ID = 62A VGS = 10V, RGEN = 25Ω (Note 4, 5) VDS = 100V, ID = 62A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A -- -- 1.2 V trr Reverse Recovery Time 145 -- ns Reverse Recovery Charge VGS = 0V, IS = 62A dIF/dt =100A/µs -- Qrr -- 0.81 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 62A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB2614 Rev. A 2 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET Package Marking and Ordering Information Figure 2. Transfer Characteristics 1000 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 ID,Drain Current[A] ID,Drain Current[A] 500 10 * Notes : 1. V DS = 10V 2. 250 µ s Pulse Test 100 o 150 C 10 o -55 C * Notes : 1. 250µ s Pulse Test o 25 C o 1 0.1 2. T C = 25 C 1 V DS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.06 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.05 VGS = 10V 0.03 VGS = 20V 0.02 * Notes : 1. VGS = 0V 2. ID = 250µ A 100 o 10 1 0.2 200 VGS, Gate-Source Voltage [V] Capacitances [pF] C oss FDB2614 Rev. A * Note: 1. VGS = 0V 2. f = 1MHz 1 10 V DS, Drain-Source Voltage [V] 1.0 1.2 V DS = 40V 6000 0 0.1 0.8 10 C iss C rss 0.6 Figure 6. Gate Charge Characteristics C iss = C gs + C gd ( C ds = shorted ) C oss = C ds + C gd C rss = C gd 3000 0.4 V SD , Source-Drain voltage [V] Figure 5. Capacitance Characteristics 9000 o T A = 150 C T A = 25 C 0.015 50 100 150 ID, Drain Current [A] 8 1000 o 0 4 6 V GS ,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature * Note : T J = 25 C 0.04 2 3 V DS = 160V 6 4 2 0 30 V DS = 100V 8 * Note : ID = 62A 0 20 40 60 80 Q g , Total Gate Charge [nC] 100 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET Figure 1. On-Region Characteristics Figure 8. On-Resistance Variation vs. Temperature 3.0 rDS(on), [Normalized] 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250 µ A -50 0 50 100 o T J, Junction Temperature [ C] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 0.0 -100 150 Figure 9. Maximum Safe Operating Area * Notes : 1. VGS = 10V 2. ID = 31A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C ] 200 Figure 10. Maximum Drain Current vs. CaseTemperature 1000 100 60 100 µs ID, Drain Current [A] ID, Drain Current [A] 70 1ms 10 10 ms Operation in This Area is Limited by R DS(on) 1 DC * Notes : 40 30 20 o 0.1 1. TC = 25 C 10 o 0.01 50 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 400 50 75 100 125 o T C , Case Temperature [ C ] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0 0.5 10 -1 0.2 PDM 0.1 t1 0.05 10 -2 0.02 0.01 t2 * Notes : o 1. Zθ JC(t) = 0.48 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) Single pulse 10 -3 10 -5 10 -4 -3 10 10 -2 -1 10 0 10 10 1 Rectangular Pulse Duration [sec] FDB2614 Rev. A 4 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET Figure 7. Breakdown Voltage Variation vs. Temperature FDB2614 200V N-Channel PowerTrench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB2614 Rev. A 5 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB2614 Rev. A 6 www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET www.fairchildsemi.com 7 FDB2614 Rev. A The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 8 FDB2614 Rev. A www.fairchildsemi.com FDB2614 200V N-Channel PowerTrench MOSFET TRADEMARKS