FDPF3860T N-Channel PowerTrench® tm MOSFET 100V, 20A, 38.2mΩ Description General Description • RDS(on) = 38.2mΩ ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability Application • RoHS compliant • DC to AC converters / Synchronous Rectification D G GD S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Ratings 100 Units V ±20 V - Continuous (TC = 25oC) 20 12.7 ID Drain Current - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns (Note 1) 80 A (Note 2) 278 mJ (Note 3) (TC = 25oC) 33.8 W - Derate above 25oC 0.27 W/oC -55 to +150 oC 300 oC Ratings Units PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL A Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 3.7 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDPF3860T Rev. A 1 o C/W www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET March 2008 Device Marking FDPF3860T Device FDPF3860T Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.1 - V/oC µA Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 VDS = 48V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 29.1 38.2 mΩ - 21 - S o ID = 250µA, Referenced to 25 C nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 5.9A gFS Forward Transconductance VDS = 10V, ID = 5.9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz - 1350 1800 pF - 145 190 pF - 60 90 pF - 15 40 ns - 17 45 ns - 24 60 ns - 7 25 ns - 23 35 nC - 7 - nC - 8 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50V, ID = 5.9A VGS = 10V, RGEN = 6Ω (Note 4, 5) VDS = 80V, ID = 5.9A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 80 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5.9A - - 1.3 V trr Reverse Recovery Time - 40 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5.9A dIF/dt = 100A/µs - 56 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L =16mH, IAS = 5.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5.9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF3860T Rev. A 2 www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID,Drain Current[A] ID,Drain Current[A] 100 Figure 2. Transfer Characteristics 200 10 o 150 C o -55 C 10 o 25 C *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS,Drain-Source Voltage[V] 1 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 200 100 IS, Reverse Drain Current [A] 0.12 0.10 0.08 0.06 VGS = 10V 0.04 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 0.02 0 25 50 75 ID, Drain Current [A] 1 0.0 100 Figure 5. Capacitance Characteristics 1.4 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss VGS, Gate-Source Voltage [V] Ciss 500 2. 250µs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 10 2000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.14 RDS(ON) [Ω], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] VDS = 80V VDS = 50V VDS = 25V 8 6 4 2 *Note: ID = 5.9A 0 0.1 FDPF3860T Rev. A 0 1 10 VDS, Drain-Source Voltage [V] 30 0 3 5 10 15 20 Qg, Total Gate Charge [nC] 25 www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET Typical Performance Characteristics FDPF3860T N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 5.9A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 10µs 25 100µs 20 10 1ms ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 200 100 2.5 10ms 1 Operation in This Area is Limited by R DS(on) DC 15 10 *Notes: 0.1 5 o 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 0 25 50 75 100 125 150 o 1 10 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] 100 200 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t2 *Notes: 0.01 o 1. ZθJC(t) = 3.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDPF3860T Rev. A t1 0.02 -4 10 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 4 2 10 3 10 www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF3860T Rev. A 5 www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDPF3860T Rev. A 6 www.fairchildsemi.com 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDPF3860T Rev. A 7 www.fairchildsemi.com FDPF3860T N-Channel PowerTrench® MOSFET Package Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com