FDB150N10 tm ® N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability Application • RoHS compliant • DC to DC convertors / Synchronous Rectification D D G D2-PAK G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage A A - Pulsed Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 1) 228 A (Note 2) 132 mJ 7.5 V/ns (Note 3) (TC = 25oC) 110 W - Derate above 25oC 0.88 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL V 40 -Continuous (TC = 100oC) Drain Current ±20 57 Drain Current IDM Units V -Continuous (TC = 25oC) ID EAS Ratings 100 -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 1.13 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDB150N10 Rev. A 1 Units o C/W www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET July 2008 Device Marking FDB150N10 Device FDB150N10 Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.1 - V/oC µA Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TC= 25oC IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 12 15 mΩ - 156 - S o ID = 250µA, Referenced to 25 C nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 49A gFS Forward Transconductance VDS = 20V, ID = 49A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz - 3580 4760 pF - 340 450 pF - 140 210 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50V, ID = 49A VGS = 10V, RGEN = 25Ω (Note 4, 5) VDS = 80V, ID = 49A VGS = 10V (Note 4, 5) - 47 104 ns - 164 338 ns - 86 182 ns - 83 176 ns - 53 69 nC - 19 - nC - 15 - nC Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 57 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 49A - - 1.3 V trr Reverse Recovery Time - 41 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 49A dIF/dt = 100A/µs - 70 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 49A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDB150N10 Rev. A 2 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 100 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250µs Pulse Test ID,Drain Current[A] ID,Drain Current[A] 500 Figure 2. Transfer Characteristics 10 100 o 150 C o 25 C 10 *Notes: 1. 250µs Pulse Test o -55 C o 2. TC = 25 C 2 0.1 1 VDS,Drain-Source Voltage[V] 0.02 10 1 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8 500 25 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 30 20 VGS = 10V 15 VGS = 20V 10 o *Note: TC = 25 C o 150 C 100 0 100 200 ID, Drain Current [A] 10 *Notes: 1. VGS = 0V 1 0.2 300 Figure 5. Capacitance Characteristics 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 5000 10 4000 *Note: 1. VGS = 0V 2. f = 1MHz VGS, Gate-Source Voltage [V] Ciss 3000 Coss 2000 1000 o 25 C 2. 250µs Pulse Test 5 Capacitances [pF] 4 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss VDS = 25V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 49A 0 0.1 FDB150N10 Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 30 0 3 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 *Notes: 1. VGS = 0V 2. ID = 250uA 0.95 0.90 -100 1.6 1.2 *Notes: 1. VGS = 10V 2. ID = 49A 0.8 0.4 -100 -50 0 50 100 o 150 TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 500 70 10µs 100 60 100µs 1ms 10ms DC 10 ID, Drain Current [A] ID, Drain Current [A] 2.0 Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 0.1 50 40 30 20 o 2. TJ = 150 C 3. Single Pulse 10 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 200 50 75 100 o 125 TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 2 1 0.5 0.2 PDM 0.1 0.05 *Notes: 0.02 t2 o 1. ZθJC(t) = 1.13 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 FDB150N10 Rev. A t1 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB150N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB150N10 Rev. A 5 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB150N10 Rev. A 6 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters FDB150N10 Rev. A 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDB150N10 Rev. A 8 www.fairchildsemi.com FDB150N10 N-Channel PowerTrench® MOSFET TRADEMARKS