FDP3205 N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mΩ Features Description • RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS compliant D G D S G TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy (Note 1) (Note 2) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range - Derate above 25oC Ratings 55 Units V ±20 V 100 A 390 A 365 mJ 150 W 1.0 W/oC -55 to +175 oC Ratings Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 1.0 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDP3205 Rev. A 1 oC/W www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET May 2008 Device Marking FDP3205 Device FDP3205 Package TO-220 Reel Size - Tape Width - Quantity 50units Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC 55 - - - - 25 VDS = 44V, TC = 150oC - - 250 VGS = ±20V, VDS = 0V - - ±100 nA VGS = VDS, ID = 250μA V VDS = 44V, VGS = 0V μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance 3.5 - 5.5 VGS = 10V, ID = 59A - 6.1 7.5 VGS = 10V, ID = 59A TJ = 175oC - 12 - VDS = 25V, VGS = 0V f = 1MHz - 5810 7730 pF - 460 610 pF pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 230 345 RG Gate Resistance VGS = 0V, f = 1MHz 3 4 5 Ω Qg(tot) Total Gate Charge at 10V VGS = 0V to 10V - 93 120 nC VGS = 0V to 2V - 25.5 33 nC - 35 - nC Qg(th) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 44V ID = 59A Ig = 1mA 9.5 - nC - 32 - nC Switching Characteristics tON Turn-On Time - 170 350 ns td(on) Turn-On Delay Time - 23 56 ns tr Turn-On Rise Time - 147 305 ns td(off) Turn-Off Delay Time - 42 94 ns tf Turn-Off Fall Time - 18 46 ns tOFF Turn-Off Time - 60 130 ns VDD = 28V, ID = 59A VGS = 10V, RGEN = 2.5Ω Drain-Source Diode Characteristics VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 59A - - 1.3 V trr Reverse Recovery Time - 43.3 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 59A dIF/dt = 100A/μs - 70.8 - nC Notes: 1: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9. 2: L = 0.21mH, IAS = 59A, VDD = 50V, VGS = 10V, RG = 25Ω, Starting TJ = 25oC FDP3205 Rev. A 2 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 500 VGS = 15.0V 10.0V 8.0 V 7.5 V 7.0 V 6.5 V ID,Drain Current[A] ID,Drain Current[A] 500 Figure 2. Transfer Characteristics 100 100 o 150 C o -55 C o 25 C 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.2 1 1 VDS,Drain-Source Voltage[V] 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS,Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.01 VGS = 10V VGS = 20V 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.00 *Note: TJ = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.0 400 Figure 5. Capacitance Characteristics Capacitances [pF] 6000 Ciss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz 4000 Coss 2000 VDS = 14V VDS = 28V VDS = 44V 8 6 4 2 Crss 100 0.1 1 10 VDS, Drain-Source Voltage [V] 2. 250μs Pulse Test 0.4 0.8 1.2 1.6 1.7 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 8000 FDP3205 Rev. A 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.02 RDS(ON) [Ω], Drain-Source On-Resistance 4 0 30 3 *Note: ID = 59A 0 20 40 60 80 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.0 0.5 *Notes: 1. VGS = 10V 2. ID = 59A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 120 10μs 100μs 100 1ms ID, Drain Current [A] ID, Drain Current [A] 1.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area 500 2.0 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: 80 40 o 1. TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 t1 0.05 0.02 0.01 t2 *Notes: 0.01 o 1. ZθJC(t) = 1.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.05 -5 10 FDP3205 Rev. A PDM 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP3205 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP3205 Rev. A 5 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP3205 Rev. A 6 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 FDP3205 Rev. A 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDP3205 Rev. A 8 www.fairchildsemi.com FDP3205 N-Channel PowerTrench® MOSFET TRADEMARKS